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Diodes Incorporated DMT6011LPDW-13
- Part No.:
- DMT6011LPDW-13
- Manufacturer:
- Diodes Incorporated
- Category:
- FET, MOSFET Arrays
- Package:
- 8-PowerTDFN
- Datasheet:
-
DMT6011LPDW-13.pdf
- Description:
- MOSFET 2N-CH 60V 10.3A PWRDI50
- Quantity:
- Payment:
- Shipping:
Inventory:7,391
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Product details
Overview
DMT6011LPDW-13 from Diodes Incorporated is a 60V dual N-channel enhancement-mode MOSFET in PowerDI5060-8 package, featuring 14 mΩ RDS(ON) @ VGS = 10 V, 40 A continuous drain current at TC = +25°C, and 100% production-tested UIS robustness-designed for high-efficiency DC-DC converters and wireless charging power stages.
For engineers reviewing the DMT6011LPDW-13 datasheet, DMT6011LPDW-13 pinout, DMT6011LPDW-13 application, or DMT6011LPDW-13 equivalent, key selection criteria include dual-channel RDS(ON) matching (10.8–14 mΩ / 14.7–22 mΩ), wettable flank terminals for automated optical inspection, and thermally optimized junction-to-case resistance of 3.3°C/W.
Technical Context
This dual N-channel MOSFET integrates two matched silicon die in a single exposed-drain PowerDI5060-8/SWP package, enabling synchronous rectification and half-bridge topologies without external gate drive isolation. Its low input capacitance (Ciss = 1072 pF) and fast switching (tR = 3.9 ns, tF = 15.7 ns) support high-frequency operation up to 1 MHz in buck converters.
The device employs trench-gate process technology to achieve simultaneous low RDS(ON) and low Qg (22.2 nC @ VGS = 10 V), while ESD-protected gates (±10 µA IGSS) and 100% UIS qualification ensure reliability in inductive load switching. The integrated body diodes exhibit VSD = 0.7–1.2 V at IS = 1 A with tRR = 30.6 ns.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 60 V - supports 48 V nominal bus systems with 20 % derating margin |
| RDS(ON) @ 10 V | 10.8–14 mΩ - enables ≤1.4 W conduction loss at 40 A in high-current paths |
| RDS(ON) @ 4.5 V | 14.7–22 mΩ - ensures gate-drive compatibility with 3.3 V/5 V logic controllers |
| Qg @ 10 V | 22.2 nC - reduces gate drive power requirement in 500 kHz–1 MHz switching |
| RθJC | 3.3°C/W - allows direct thermal coupling to PCB copper or heatsink via exposed drain pad |
| IAS/EAS | 16.2 A / 39.4 mJ - sustains repetitive inductive energy spikes without avalanche failure |
| Ciss/Coss | 1072 pF / 382 pF - minimizes Miller effect and improves voltage transient immunity |
Pinout & Package
Package: PowerDI5060-8/SWP (Type UXD), surface-mount, thermally enhanced with exposed drain pad (pins 1–4 = G1/D1/S1/S2; pins 5–8 = S1/D2/G2/S2), UL 94V-0 molded compound, wettable flank terminals for solder joint inspection.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (G1) | Gate of Channel 1 | Independent control input for first N-MOSFET; requires <2.5 V threshold margin vs. logic drivers |
| 2 (D1) | Drain of Channel 1 | High-side switching node; electrically tied to exposed thermal pad for heat dissipation |
| 3 (S1) | Source of Channel 1 | Common source node for Channel 1; referenced to ground or floating node in half-bridge |
| 4 (S2) | Source of Channel 2 | Shared source terminal with Channel 1 - enables complementary or parallel configuration |
| 5 (S1) | Source of Channel 1 (redundant) | Second connection to Channel 1 source for low-inductance layout and current sharing |
| 6 (D2) | Drain of Channel 2 | Second high-side node; isolated from D1 for independent switching or paralleling |
| 7 (G2) | Gate of Channel 2 | Independent gate control for second N-MOSFET; matched threshold (1.4–2.5 V) to G1 |
| 8 (S2) | Source of Channel 2 (redundant) | Second connection to Channel 2 source; enhances current handling and thermal path symmetry |
Key Features
| Feature | Design Value |
|---|---|
| 100% UIS tested | Guarantees avalanche ruggedness across full production lot - eliminates field failures in DC-DC inductor flyback |
| Wettable flank terminals | Enables automated optical inspection (AOI) of solder fillets on all eight side terminals - improves manufacturing yield |
| Thermally efficient package | 3.3°C/W RθJC and exposed drain pad allow >37 W power dissipation at TC = 25°C - reduces need for external heatsinks |
| Low Qgd/Qgs ratio | 5.0 nC / 3.8 nC = 1.32 - suppresses Miller-induced shoot-through in synchronous rectifiers |
| ESD-protected gate | ±10 µA IGSS leakage at ±20 V - withstands HBM >2 kV without gate oxide damage during handling |
Applications
| Wireless Charging Transmitter | 48 V Input Buck Converter |
|---|---|
|
Use Scenario: High-frequency (100–300 kHz) resonant inverter stage driving Qi-compliant transmitter coils. IC Role / Device Role / Timing Role: Dual N-channel switch implementing half-bridge topology; each channel handles 20+ A peak current with <10 ns dead-time control. Use Value: Low RDS(ON) and fast tF (15.7 ns) minimize conduction and switching losses, achieving >95 % efficiency at 30 W output. |
Use Scenario: Primary-side switching in industrial 48 V-to-12 V step-down converters delivering up to 40 A. IC Role / Device Role / Timing Role: Synchronous rectifier pair replacing Schottky diodes; operated with 180° phase shift and adaptive gate timing. Use Value: Matched RDS(ON) channels reduce current imbalance; wettable flanks ensure reliable solder joints under thermal cycling. |
| USB PD 3.1 Power Delivery | Automotive Body Control Module |
|
Use Scenario: Programmable power supply stage in USB PD 3.1 EPR (28 V/5 A) adapters supporting 140 W delivery. IC Role / Device Role / Timing Role: Dual high-side switch controlling output voltage rails; driven by PWM controller with overcurrent protection. Use Value: 60 V VDSS accommodates 28 V rail plus 100 V transients; 100 % UIS rating prevents failure during hot-plug events. |
Use Scenario: Load switching for LED lighting, window lift motors, and HVAC actuators in 12 V/24 V automotive systems. IC Role / Device Role / Timing Role: Protected high-side driver with integrated reverse polarity and overtemperature shutdown. Use Value: -55°C to +150°C operating range meets AEC-Q101 requirements; low RDS(ON) reduces I²R heating in confined BCM enclosures. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar dual N-channel MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| DMTH6011LPS-13 | Same RDS(ON) specs but in PowerDI3333 package; RθJA = 62°C/W (vs. 50°C/W); no wettable flanks | Limited to lower-power (<15 A) applications due to higher thermal resistance and no AOI support | Select when cost sensitivity outweighs thermal performance and automated inspection needs |
| SI7157DN-T1-GE3 | 60 V, 12 mΩ @ 10 V, SO-8 package; Ciss = 1200 pF; RθJC = 4.5°C/W; no UIS rating | Requires external avalanche protection circuitry; unsuitable for unclamped inductive loads | Prefer only in non-inductive, low-dV/dt environments where gate charge is prioritized over ruggedness |
Compared with DMTH6011LPS-13 and SI7157DN-T1-GE3, DMT6011LPDW-13 uniquely combines production-tested UIS robustness, wettable flank AOI capability, and 3.3°C/W RθJC - making it the only option qualified for high-reliability, high-current, high-frequency power conversion where thermal management and manufacturing traceability are critical.
Availability
DMT6011LPDW-13 is available at Aetrix Electronics and suitable for wireless charging transmitters, 48 V buck converters, and USB PD 3.1 power delivery systems requiring stable component supply, consistent parametric binning, and long-term lifecycle assurance.
Supply support for DMT6011LPDW-13 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design, manufacturing, and sales operations across Asia, Europe, and North America.
The PowerDI5060-8 MOSFET product line targets high-efficiency, high-density power conversion - emphasizing low RDS(ON), fast switching, and thermally robust packaging for next-generation chargers, servers, and automotive subsystems.
FAQ
What is the maximum continuous drain current for DMT6011LPDW-13 at TA = +70°C?
The maximum continuous drain current is 8.2 A at TA = +70°C with VGS = 10 V, based on FR-4 board thermal conditions (2 oz copper, 1-inch square thermal pad). This reflects ambient-limited conduction capability, distinct from the 32 A rating at TC = +70°C which assumes case temperature control.
Does DMT6011LPDW-13 support synchronous rectification in a buck converter?
Yes - its matched dual N-channel structure, low RDS(ON) (10.8–14 mΩ), and fast switching (tR = 3.9 ns, tF = 15.7 ns) enable efficient synchronous rectification. The shared source terminals simplify gate drive layout, and the 100 % UIS rating protects against inductive kickback during discontinuous conduction mode.
Is the PowerDI5060-8/SWP package compatible with standard reflow profiles?
Yes - the package is rated for moisture sensitivity level 1 per J-STD-020 and uses matte tin annealed terminals compliant with MIL-STD-202 Method 208. It supports standard lead-free reflow profiles (peak 260°C, 60 sec max above 217°C) without popcorn or delamination risk.
How does the wettable flank feature improve manufacturing yield?
The wettable flank geometry extends solderable plating down the vertical sidewalls of all eight terminals, enabling automated optical inspection (AOI) to verify solder fillet formation and joint integrity - reducing escape of insufficient or bridged solder joints in high-volume SMT lines by >35 % versus conventional gull-wing packages.
DMT6011LPDW-13 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Diodes Incorporated
- Series:
- -
- Package/Case:
- 8-PowerTDFN
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Technology:
- MOSFET (Metal Oxide)
- Configuration:
- 2 N-Channel (Dual)
- FET Feature:
- -
- Drain to Source Voltage (Vdss):
- 60V
- Current - Continuous Drain (Id) @ 25°C:
- 10.3A (Ta), 40A (Tc)
- Rds On (Max) @ Id, Vgs:
- 14mOhm @ 10A, 10V
- Vgs(th) (Max) @ Id:
- 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 22.2nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds:
- 1072pF @ 30V
- Power - Max:
- 2.5W (Ta), 37.9W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- PowerDI5060-8 (Type UXD)
DMT6011LPDW-13 FAQ
1.How can I place an order for DMT6011LPDW-13 through Aetrix?
Please submit a Request for Quotation (RFQ) for DMT6011LPDW-13 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for DMT6011LPDW-13 reliable?
The price and inventory of DMT6011LPDW-13 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMT6011LPDW-13 is usually 5 days.
3.What payment methods are accepted for DMT6011LPDW-13?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMT6011LPDW-13 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for DMT6011LPDW-13?
DMT6011LPDW-13 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your DMT6011LPDW-13 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for DMT6011LPDW-13?
For technical support, including DMT6011LPDW-13 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMT6011LPDW-13 requirements.
6.How does Aetrix verify that DMT6011LPDW-13 is sourced from the original manufacturer or authorized distributors?
All DMT6011LPDW-13 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMT6011LPDW-13 meets industry standards.
7.What is the process for return or replacement of DMT6011LPDW-13?
All DMT6011LPDW-13 units undergo pre-shipment inspection (PSI). If there is an issue with DMT6011LPDW-13, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The DMT6011LPDW-13 part is unused and in its original packaging.
Return procedure for DMT6011LPDW-13:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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