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Diodes Incorporated DMT6011LSS-13
- Part No.:
- DMT6011LSS-13
- Manufacturer:
- Diodes Incorporated
- Category:
- FETs, MOSFETs
- Package:
- 8-SOIC (0.154", 3.90mm Width)
- Datasheet:
-
DMT6011LSS-13.pdf
- Description:
- MOSFET BVDSS: 41V~60V SO-8 T&R 2
- Quantity:
- Payment:
- Shipping:
Inventory:8,008
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Product details
Overview
DMT6011LSS from Diodes Incorporated is a 60V N-channel enhancement-mode MOSFET in SO-8 package, delivering 11 mΩ RDS(ON) at VGS = 10 V and 14.5 mΩ at 4.5 V, rated for 10.6 A continuous drain current at 25°C. It features ESD-protected gate, 100% UIS-tested robustness, and low input capacitance (1072 pF), enabling high-efficiency synchronous rectification in DC-DC converters.
For engineers reviewing the DMT6011LSS datasheet, DMT6011LSS pinout, DMT6011LSS application, or DMT6011LSS equivalent, key selection criteria include its 60 V VDSS, 11 mΩ on-resistance at 10 V drive, SO-8 thermal performance (RθJA = 58.3 °C/W with 1-inch² copper), fast switching (tF = 15.7 ns), and body diode recovery charge (QRR = 21.9 nC) for hard-switched topologies.
Technical Context
This MOSFET employs planar trench-gate technology to balance low conduction loss and fast switching speed. Its gate threshold voltage (1.4–2.5 V) supports both 4.5 V and 10 V logic-level drive, while the integrated gate protection diode and ESD-hardened structure ensure reliability in noisy power stages.
The device exhibits strong thermal stability: RDS(ON) increases only 1.8× from –55°C to 150°C at VGS = 10 V, and its 39.4 mJ avalanche energy (L = 0.3 mH) enables robust operation under inductive load transients without external snubbing.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 60 V - Withstands up to 60 V drain-source blocking voltage, suitable for 48 V bus and PoE++ applications. |
| RDS(ON) @ 10 V | 11 mΩ max - Enables ≤1.1 W conduction loss at 10 A, critical for high-current synchronous buck stages. |
| RDS(ON) @ 4.5 V | 14.5 mΩ max - Supports direct drive from 3.3 V/5 V controllers without level-shifting circuitry. |
| Qg @ 10 V | 22.2 nC - Determines gate driver power requirement and switching transition time in hard-switched converters. |
| tF | 15.7 ns - Limits turn-off switching loss and enables >1 MHz operation in high-frequency DC-DC designs. |
| QRR | 21.9 nC - Quantifies reverse recovery charge of internal body diode; impacts shoot-through risk and EMI in synchronous rectifiers. |
| EAS | 39.4 mJ - Specifies single-pulse avalanche energy handling capability, supporting unclamped inductive switching without failure. |
Pinout & Package
Package: SO-8 (Surface-mount, 8-pin, 4.9 mm × 6.0 mm footprint, 1.27 mm pitch, 0.72 mm nominal lead length). Molded green compound, matte tin annealed terminals, JEDEC-compliant moisture sensitivity level 1.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 3, 4, 5, 6, 7 | Drain (D) | Seven parallel drain terminals - provide low-inductance, high-current path and enhanced thermal dissipation via exposed pad connection. |
| 8 | Gate (G) | Single gate input - accepts standard logic-level drive; ESD protection diode integrated to limit gate oxide stress. |
| Source (S) | Source (S) | Internally connected to pins 1–7 source metallization - forms return path for channel current and body diode conduction. |
Key Features
| Feature | Design Value |
|---|---|
| 100% UIS tested | Guarantees avalanche ruggedness across production lot - eliminates need for derating or external clamping in flyback or boost converters. |
| Low Ciss / Coss ratio | 1072 pF / 382 pF - improves voltage-dependent switching efficiency and reduces Miller-induced gate oscillation in high-dV/dt environments. |
| Thermal resistance RθJC | 7.7 °C/W - enables direct heatsinking to PCB copper or external metal, supporting >2 W continuous power dissipation with proper layout. |
| Body diode tRR | 30.6 ns - faster than typical discrete MOSFETs, reducing cross-conduction losses and improving light-load efficiency in synchronous rectification. |
| Green, RoHS 3 compliant | <900 ppm Br/Cl, <1000 ppm Sb - meets automotive and industrial environmental compliance mandates without sacrificing electrical performance. |
Applications
| Server VRM Power Stage | USB-C PD 48 V Input Converter |
|---|---|
|
Use Scenario: High-current, high-frequency buck converter supplying CPU core voltage from 12 V or 48 V bus. IC Role / Device Role / Timing Role: Low-side synchronous rectifier switch operating at 500 kHz–1 MHz with tight dead-time control. Use Value: 11 mΩ RDS(ON) minimizes I²R loss at 100+ A phase currents; fast tF and low QRR reduce switching loss and improve transient response. |
Use Scenario: Primary-side switch in 48 V-input, 20 V-output USB-C PD 100 W adapter using active clamp forward or LLC topology. IC Role / Device Role / Timing Role: Main power switch handling 60 V blocking and 8–10 A peak current during ZVS transitions. Use Value: 60 V VDSS provides 20 % margin over 48 V nominal; 39.4 mJ EAS ensures reliability during startup and fault conditions. |
| Industrial 24 V Motor Drive Half-Bridge | Telecom DC-DC Brick Synchronous Rectifier |
|
Use Scenario: H-bridge output stage driving brushed DC or stepper motors in programmable logic controller (PLC) I/O modules. IC Role / Device Role / Timing Role: High-side or low-side switch controlling bidirectional motor current with PWM frequencies up to 20 kHz. Use Value: 14.5 mΩ RDS(ON) at 4.5 V allows direct microcontroller GPIO drive; 100 % UIS rating prevents failure during inductive kickback. |
Use Scenario: Secondary-side synchronous rectifier in isolated 48 V-to-12 V telecom brick supplying base station RF amplifiers. IC Role / Device Role / Timing Role: Body-diode-replacement switch operating in continuous conduction mode with 10–15 A average current. Use Value: Low VSD (0.7–1.2 V) and fast tRR reduce conduction loss vs. Schottky diodes; SO-8 footprint simplifies layout in space-constrained bricks. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IRF7470PBF | RDS(ON) = 12.5 mΩ @ 10 V, SO-8, but higher Qg (29 nC) and no UIS rating. | Lacks production UIS testing - requires external avalanche protection in inductive loads. | Prefer DMT6011LSS where unclamped switching or high-reliability industrial use is required. |
| DMN6011LKQ-13 | Same die, AEC-Q101 qualified, identical RDS(ON)/Qg, but automotive-grade traceability and PPAP support. | Qualified for automotive powertrain and ADAS systems requiring IATF 16949 manufacturing and change control. | Select DMN6011LKQ-13 for automotive programs; DMT6011LSS remains optimal for industrial/commercial cost-sensitive designs. |
Compared with IRF7470PBF, DMT6011LSS offers lower gate charge and guaranteed avalanche ruggedness; versus DMN6011LKQ-13, it provides identical electrical performance at lower cost and without automotive qualification overhead.
Availability
DMT6011LSS is available at Aetrix Electronics and suitable for server VRMs, USB-C PD adapters, industrial motor drives, and telecom DC-DC bricks requiring stable component supply, consistent parametric performance, and long-term manufacturability.
Supply support for DMT6011LSS includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Diodes Incorporated is a global semiconductor manufacturer specializing in discrete, analog, and mixed-signal solutions for power management, signal integrity, and connectivity applications.
DMT6011LSS belongs to Diodes' "PowerMOS" product line, engineered specifically for high-efficiency, high-reliability power conversion in industrial, computing, and communications infrastructure.
FAQ
What is the maximum continuous drain current for DMT6011LSS at 70°C ambient?
The maximum continuous drain current is 8.5 A at TA = +70°C with 1-inch² copper pad (Note 6). This reflects thermal derating due to reduced heat dissipation at elevated ambient temperatures, not device degradation. The value assumes FR-4 board with 2 oz copper and specified layout per datasheet Figure 12.
Does DMT6011LSS require a gate resistor for safe operation?
A gate resistor is recommended to control dV/dt and prevent ringing, especially in high-speed switching. Typical values range from 2.2 Ω to 10 Ω depending on driver strength and layout parasitics. The device's Rg = 1.4 Ω (typical) defines intrinsic gate resistance, but external series resistance is needed for robust EMI control and shoot-through prevention.
Can DMT6011LSS be used in linear (analog) regulator applications?
No - DMT6011LSS is optimized for switching operation and lacks SOA characterization for linear mode. Its Safe Operating Area curve (Figure 12) shows pulse-limited operation only; sustained linear operation risks thermal runaway due to positive temperature coefficient of RDS(ON) and insufficient thermal mass in SO-8 package.
Is the body diode suitable for reverse polarity protection?
No - the body diode conducts from source to drain (forward-biased when S > D), making it unsuitable for reverse polarity protection. For that function, an external P-channel MOSFET or dedicated protection IC is required. Using the body diode for reverse protection would short the supply during fault conditions.
DMT6011LSS-13 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Diodes Incorporated
- Series:
- -
- Package/Case:
- 8-SOIC (0.154", 3.90mm Width)
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 60 V
- Current - Continuous Drain (Id) @ 25°C:
- 10.6A (Ta)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 11mOhm @ 10A, 10V
- Vgs(th) (Max) @ Id:
- 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 22.2 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 1072 pF @ 30 V
- FET Feature:
- -
- Power Dissipation (Max):
- 1.4W (Ta)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 8-SO
DMT6011LSS-13 FAQ
1.How can I place an order for DMT6011LSS-13 through Aetrix?
Please submit a Request for Quotation (RFQ) for DMT6011LSS-13 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for DMT6011LSS-13 reliable?
The price and inventory of DMT6011LSS-13 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMT6011LSS-13 is usually 5 days.
3.What payment methods are accepted for DMT6011LSS-13?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMT6011LSS-13 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for DMT6011LSS-13?
DMT6011LSS-13 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your DMT6011LSS-13 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for DMT6011LSS-13?
For technical support, including DMT6011LSS-13 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMT6011LSS-13 requirements.
6.How does Aetrix verify that DMT6011LSS-13 is sourced from the original manufacturer or authorized distributors?
All DMT6011LSS-13 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMT6011LSS-13 meets industry standards.
7.What is the process for return or replacement of DMT6011LSS-13?
All DMT6011LSS-13 units undergo pre-shipment inspection (PSI). If there is an issue with DMT6011LSS-13, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The DMT6011LSS-13 part is unused and in its original packaging.
Return procedure for DMT6011LSS-13:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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