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Diodes Incorporated DMT6012LFDF-13
- Part No.:
- DMT6012LFDF-13
- Manufacturer:
- Diodes Incorporated
- Category:
- FETs, MOSFETs
- Package:
- 6-UDFN Exposed Pad
- Datasheet:
-
DMT6012LFDF-13.pdf
- Description:
- MOSFET N-CH 60V 9.5A 6UDFN
- Quantity:
- Payment:
- Shipping:
Inventory:3,690
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Product details
Overview
DMT6012LFDF-13 from Diodes Incorporated is a 60V N-channel enhancement-mode MOSFET in U-DFN2020-6 (Type F) package, featuring 14 mΩ RDS(ON) at VGS = 10 V, 9.5 A continuous drain current at TA = +25°C, and 100% production-tested UIS robustness-designed for high-efficiency DC-DC converters and wireless charging switches.
For engineers reviewing the DMT6012LFDF-13 datasheet, DMT6012LFDF-13 pinout, DMT6012LFDF-13 application, or DMT6012LFDF-13 equivalent, key selection criteria include low-profile 0.6 mm height, 4 mm² PCB footprint, RDS(ON) performance at 4.5 V gate drive, thermal resistance of 66 °C/W (with enhanced pad layout), and AEC-Q101 readiness for automotive power switching.
Technical Context
This MOSFET employs trench-gate silicon technology optimized for low conduction loss while maintaining fast switching speed: tD(ON) = 3.2 ns, tF = 8.5 ns, and Qgd = 3.4 nC at VDS = 30 V. Its body diode exhibits tRR = 23.0 ns and QRR = 14.1 nC under 10 A/100 A/μs conditions.
The device operates across –55°C to +150°C junction temperature range, with gate threshold voltage VGS(TH) tightly specified at 1.2–2.3 V and stable over temperature. It supports unclamped inductive switching up to IAS = 12.6 A and EAS = 7.9 mJ, enabling reliable operation in hard-switched topologies.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 60 V - Maximum blocking voltage for 24 V and 48 V input power stages |
| RDS(ON) | 14 mΩ @ VGS = 10 V - Enables <1.3 W conduction loss at 9.5 A in compact layouts |
| ID (TA = +25°C) | 9.5 A - Sustains full-load current in USB PD adapters and buck converters without forced cooling |
| Ciss | 785 pF - Low input capacitance supports >1 MHz switching with minimal gate drive power |
| RθJA (enhanced pad) | 66 °C/W - Allows 1.2 W continuous dissipation at +70°C ambient using 1-inch² copper pour |
| Qg (VGS = 10 V) | 13.6 nC - Enables efficient gate driving with standard 1-A peak drivers |
| UIS Rating | 100% production tested - Guarantees ruggedness against inductive turn-off transients in motor drives and DC-DC controllers |
Pinout & Package
U-DFN2020-6 (Type F) package: 2.0 × 2.0 × 0.6 mm, 6-terminal leadless plastic mold with NiPdAu-plated terminals, moisture sensitivity level 1, UL 94V-0 rated compound.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Pin 1 (Top View) | Source | Primary return path for load current; connected to exposed thermal pad on bottom for heat transfer |
| Pin 2 | Gate | Control terminal requiring <2.3 V threshold; low Ciss enables fast edge rates |
| Pin 3 | Drain | High-side switch node; rated for 60 V blocking and 60 A pulsed current |
| Pin 4 | Source | Second source connection-electrically tied to Pin 1 and thermal pad for lower loop inductance |
| Pin 5 | Drain | Second drain connection-reduces conduction resistance and improves current sharing |
| Pin 6 | Drain | Third drain connection-enhances thermal and electrical performance in high-current paths |
Key Features
| Feature | Design Value |
|---|---|
| Low-profile 0.6 mm height | Enables integration into space-constrained portable electronics and ultra-thin power modules |
| 4 mm² PCB footprint | Reduces board area by >40% vs. SO-8 equivalents while maintaining thermal performance |
| 100% UIS tested | Eliminates need for external snubbers in flyback and synchronous rectifier circuits |
| Halogen- and antimony-free "Green" construction | Meets IPC-1752A material declaration requirements and EU RoHS 3 (2015/863/EU) |
| Thermal resistance RθJC = 11.4 °C/W | Supports direct thermal coupling to heatsink or metal-core PCB for high-power density designs |
Applications
| USB-C Power Delivery Adapters | Wireless Charging Transmitter Coils |
|---|---|
Use Scenario: High-frequency synchronous rectification in 30–100 W GaN-based USB PD adapters. IC Role / Device Role / Timing Role: Low-side synchronous rectifier MOSFET replacing Schottky diodes to reduce conduction loss and improve efficiency above 94%. Use Value: 14 mΩ RDS(ON) at 10 V gate drive cuts rectifier loss by >60% vs. 40 V Schottky, directly enabling compact 30 mm × 30 mm adapter form factors. |
Use Scenario: Half-bridge switching in 15 W Qi-compliant wireless charging transmitters. IC Role / Device Role / Timing Role: High-speed switching element in resonant LLC topology operating at 110–205 kHz. Use Value: 3.2 ns turn-on delay and 8.5 ns fall time minimize dead-time losses, while 785 pF Ciss ensures clean gate drive waveform integrity. |
| Industrial DC-DC Buck Converters | Automotive Body Control Modules |
Use Scenario: 12 V–3.3 V point-of-load conversion in programmable logic controllers and sensor hubs. IC Role / Device Role / Timing Role: High-side switch in integrated buck controller ICs with external FET drive capability. Use Value: 21 mΩ RDS(ON) at 4.5 V gate drive enables compatibility with 5 V logic-level controllers, eliminating level-shifting circuitry. |
Use Scenario: Load switching for LED lighting and window lift actuators in AEC-Q101 qualified systems. IC Role / Device Role / Timing Role: Protected high-side driver replacement in smart power distribution units. Use Value: Production-tested UIS and –55°C to +150°C operation meet automotive transient immunity and under-hood thermal requirements without derating. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel 60 V power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| DMN6012LFG-7 | Same die, identical RDS(ON) and Qg, but in U-DFN2020-6 (Type G) package with different pinout (G-S-D-S-D-D) and 0.5 mm profile | Requires PCB redesign due to altered terminal arrangement and thinner profile affecting thermal interface | Select when board stack height is constrained below 0.6 mm and thermal pad layout can be adjusted |
| SI2302DS-T1-GE3 | Higher RDS(ON) (30 mΩ @ 4.5 V), lower ID (3.2 A), SOT-23 package, no UIS rating | Limited to <5 W loads; unsuitable for DC-DC primary side or wireless charging bridges | Only consider for low-power always-on bias rails where cost outweighs efficiency and ruggedness |
Compared with DMT6012LFDF-13, DMN6012LFG-7 offers tighter height control but demands layout revision, while SI2302DS-T1-GE3 sacrifices conduction efficiency and reliability for cost-sensitive sub-1 W applications-making DMT6012LFDF-13 optimal for mid-power, high-reliability switching where size, loss, and ruggedness are jointly critical.
Availability
DMT6012LFDF-13 is available at Aetrix Electronics and suitable for USB-C power delivery adapters, wireless charging transmitters, and industrial DC-DC buck converters requiring stable component supply, long-term lifecycle support, and traceable sourcing.
Supply support for DMT6012LFDF-13 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design, manufacturing, and sales operations across Asia, Europe, and North America.
This MOSFET belongs to Diodes' PowerMOS™ family, engineered specifically for high-efficiency, high-density power conversion in consumer, industrial, and automotive applications-emphasizing low RDS(ON), fast switching, and robust transient handling.
FAQ
What is the maximum continuous drain current at 70°C ambient?
The DMT6012LFDF-13 supports 7.6 A continuous drain current at TA = +70°C with standard FR-4 PCB and 2 oz copper, per Note 6 in the datasheet. This rating assumes minimum recommended pad layout and accounts for thermal derating based on RθJA = 66 °C/W.
Does this MOSFET have an integrated ESD protection diode on the gate?
No-DMT6012LFDF-13 does not integrate gate ESD protection. Its gate oxide is rated for ±20 V VGSS, and external gate resistors and TVS clamps are recommended in high-noise environments. The device passes HBM ESD testing per JESD22-A114 (≥2 kV), but relies on proper PCB layout for system-level robustness.
Can it be used in synchronous rectification for 5 V output rails?
Yes-its 1.2–2.3 V gate threshold and 21 mΩ RDS(ON) at VGS = 4.5 V make it suitable for 5 V synchronous rectifiers. With typical VGS ≥ 4.2 V in self-driven configurations, conduction loss remains below 0.35 W at 5 A, improving efficiency by 2–3% over Schottky alternatives.
Is the thermal pad electrically isolated from other terminals?
No-the exposed thermal pad on the bottom of the U-DFN2020-6 (Type F) package is internally connected to the source terminals (Pins 1 and 4). It must be soldered to a PCB copper pour tied to the source net to ensure both thermal performance and electrical integrity.
DMT6012LFDF-13 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Diodes Incorporated
- Series:
- -
- Package/Case:
- 6-UDFN Exposed Pad
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 60 V
- Current - Continuous Drain (Id) @ 25°C:
- 9.5A (Ta)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 14mOhm @ 8.5A, 10V
- Vgs(th) (Max) @ Id:
- 2.3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 13.6 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 785 pF @ 30 V
- FET Feature:
- -
- Power Dissipation (Max):
- 900mW (Ta), 11W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- U-DFN2020-6 (Type F)
DMT6012LFDF-13 FAQ
1.How can I place an order for DMT6012LFDF-13 through Aetrix?
Please submit a Request for Quotation (RFQ) for DMT6012LFDF-13 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for DMT6012LFDF-13 reliable?
The price and inventory of DMT6012LFDF-13 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMT6012LFDF-13 is usually 5 days.
3.What payment methods are accepted for DMT6012LFDF-13?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMT6012LFDF-13 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for DMT6012LFDF-13?
DMT6012LFDF-13 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your DMT6012LFDF-13 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for DMT6012LFDF-13?
For technical support, including DMT6012LFDF-13 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMT6012LFDF-13 requirements.
6.How does Aetrix verify that DMT6012LFDF-13 is sourced from the original manufacturer or authorized distributors?
All DMT6012LFDF-13 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMT6012LFDF-13 meets industry standards.
7.What is the process for return or replacement of DMT6012LFDF-13?
All DMT6012LFDF-13 units undergo pre-shipment inspection (PSI). If there is an issue with DMT6012LFDF-13, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The DMT6012LFDF-13 part is unused and in its original packaging.
Return procedure for DMT6012LFDF-13:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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