My Inquiry
My Account
Diodes Incorporated DMT6012LFV-13
- Part No.:
- DMT6012LFV-13
- Manufacturer:
- Diodes Incorporated
- Category:
- FETs, MOSFETs
- Package:
- 8-PowerVDFN
- Datasheet:
-
DMT6012LFV-13.pdf
- Description:
- MOSFET N-CH 60V 43.3A PWRDI3333
- Quantity:
- Payment:
- Shipping:
Inventory:6,320
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
DMT6012LFV-13 from Diodes Incorporated is a 60V N-channel enhancement-mode MOSFET in PowerDI3333-8 package, delivering 12 mΩ RDS(ON) at VGS = 10 V and 43.3 A continuous drain current at TC = +25°C. It features ESD-protected gate, 100% UIS-tested robustness, and thermally efficient small-footprint packaging-optimized for high-efficiency DC-DC converters and backlighting power stages.
For engineers reviewing the DMT6012LFV-13 datasheet, DMT6012LFV-13 pinout, DMT6012LFV-13 application, or DMT6012LFV-13 equivalent, key selection criteria include its low RDS(ON) at 4.5 V (15 mΩ), 170 A pulsed drain capability, integrated body diode with 25.8 ns reverse recovery time, and thermal resistance of 3.7°C/W junction-to-case-critical for compact, high-current power switches.
Technical Context
This MOSFET employs planar trench-gate technology to balance low conduction loss and fast switching performance. Its gate threshold voltage (1–2.5 V) enables compatibility with 3.3 V and 5 V logic-level drive, while the 22.2 nC total gate charge at VGS = 10 V supports efficient PWM control in synchronous buck topologies.
The device integrates an optimized body diode with 15.1 nC QRR and 25.8 ns tRR, reducing switching losses in hard-commutated applications. Its PowerDI3333-8 package provides direct thermal path via exposed drain pad and achieves 33% board area reduction versus SO-8-enabling higher power density in space-constrained designs.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 60 V - Maximum blocking voltage for 12 V/24 V input DC-DC stages with margin against transients |
| RDS(ON) @ 10 V | 12 mΩ - Enables ≤0.5 W conduction loss at 20 A, critical for thermal management in sealed enclosures |
| RDS(ON) @ 4.5 V | 15 mΩ - Supports direct drive from microcontroller GPIOs without level-shifting in low-voltage systems |
| ID (continuous) | 43.3 A @ TC = +25°C - Sustains high-current loads in single-phase VRMs and LED driver outputs |
| Qg @ 10 V | 22.2 nC - Determines gate driver power requirement and switching speed in 500 kHz–1 MHz converters |
| tRR | 25.8 ns - Minimizes shoot-through risk and body-diode conduction loss during dead-time transitions |
| RθJC | 3.7°C/W - Enables direct heatsinking to PCB copper or metal core for >30 W dissipation in compact layouts |
Pinout & Package
Package: PowerDI3333-8 (Type UX), surface-mount, thermally enhanced with exposed drain pad. Dimensions: 3.30 × 3.30 × 0.80 mm (L × W × H); moisture sensitivity level 1 per J-STD-020.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 3, 4, 5, 6, 7, 8 (Drain) | Drain (common source connection) | All pins 1–8 are internally connected to the drain terminal and exposed copper pad-provides low-inductance, high-current path and primary thermal conduction route |
| Pin 1 (Gate) | Gate control input | Standard MOSFET gate terminal; ESD-protected with internal diode-requires <10 Ω series resistance for ringing suppression in high-dV/dt environments |
| Pin 8 (Source) | Source reference node | Primary source connection point; must be routed with low impedance to ground plane to minimize switching noise coupling into control circuitry |
Key Features
| Feature | Design Value |
|---|---|
| 100% UIS tested | Guarantees avalanche energy handling up to 28.1 mJ (L = 0.1 mH), eliminating need for external snubbers in inductive load switching |
| PowerDI3333-8 footprint | Reduces board area by 67% vs. SO-8-enables dual-phase 40 A converters in ≤12 mm² per phase |
| ESD-protected gate | Withstands ±10 µA gate leakage at ±20 V and human-body-model ESD events-reduces assembly yield loss and field failure risk |
| Lead-free & green | Halogen- and antimony-free (<900 ppm Br/Cl, <1000 ppm Sb), compliant with RoHS 3 and JEDEC MSL-1-supports global environmental compliance programs |
Applications
| LED Backlight Driver | Point-of-Load Converter |
|---|---|
|
Use Scenario: High-brightness LCD backlight in automotive instrument clusters requiring 30–40 A pulsed current at 48 V input. IC Role / Device Role / Timing Role: Primary high-side switch in boost converter driving parallel LED strings; operates at 200–500 kHz with 10–20% duty cycle. Use Value: 12 mΩ RDS(ON) limits conduction loss to <0.5 W at peak current, enabling passive cooling and meeting AEC-Q200 temperature cycling requirements. |
Use Scenario: 12 V input to 1.2 V/30 A output VRM for FPGA or ASIC core supply in industrial edge controllers. IC Role / Device Role / Timing Role: Low-side synchronous rectifier in 1 MHz buck converter; commutates with 25.8 ns tRR to minimize dead-time loss. Use Value: 15 mΩ RDS(ON) at 4.5 V allows direct drive from controller's 5 V gate driver, eliminating level shifter and reducing BOM count. |
| USB-C PD Power Path | Motor Drive Half-Bridge |
|
Use Scenario: 20 V/5 A USB-C Power Delivery input protection and path control in portable medical monitors. IC Role / Device Role / Timing Role: Reverse-polarity and overcurrent protection switch placed between input connector and DC-DC front-end; rated for 60 V transient clamping. Use Value: 60 V VDSS and 170 A pulsed rating withstand 100 V/10 µs surge events per IEC 61000-4-5, ensuring system-level surge immunity. |
Use Scenario: 24 V brushed DC motor control in automated test equipment with bidirectional torque and regenerative braking. IC Role / Device Role / Timing Role: Low-side switch in half-bridge configuration; conducts reverse current through body diode during freewheeling. Use Value: 40 A continuous body diode current (IS) and 25.8 ns tRR enable efficient regeneration without external Schottky diodes-reducing component count and layout area. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| DMT6004LPS-13 | Lower RDS(ON) (4.2 mΩ @ 10 V) but larger PowerDI5060-8 package (5.0 × 6.0 mm) | Higher power density not required; board space available for improved thermal margin | Select when thermal budget exceeds 40 W and board area permits larger footprint for lower conduction loss |
| DMTH6012LPS-13 | Same RDS(ON) spec but TO-252 (DPAK) package with higher RθJA (70°C/W vs. 64°C/W) | Legacy PCB design with DPAK land pattern; no rework for thermal pad routing | Choose for drop-in replacement on existing DPAK-based boards where PowerDI3333-8 re-layout is impractical |
Compared with DMT6012LFV-13, DMT6004LPS-13 trades board area for lower conduction loss in high-current, thermally relaxed designs, while DMTH6012LPS-13 sacrifices thermal efficiency for mechanical compatibility with legacy DPAK footprints-making DMT6012LFV-13 optimal for new compact, high-frequency power stages.
Availability
DMT6012LFV-13 is available at Aetrix Electronics and suitable for LED backlight drivers, point-of-load converters, and USB-C PD power path management requiring stable component supply, consistent parametric performance across production lots, and long-term lifecycle support.
Supply support for DMT6012LFV-13 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, specializing in high-reliability power management, signal integrity, and protection solutions for industrial, computing, and consumer markets.
The DMT6012LFV belongs to Diodes' Power MOSFET product line, engineered specifically for high-efficiency, high-density DC-DC conversion and power switching in space-constrained applications-emphasizing low RDS(ON), fast switching, and robust avalanche performance.
FAQ
What is the maximum gate-source voltage rating for DMT6012LFV-13?
The absolute maximum gate-source voltage (VGS) is ±20 V. Exceeding this rating risks permanent gate oxide damage. For reliable operation, gate drive should be limited to 12 V maximum in production designs, with transient spikes clamped using Zener diodes or gate resistors to prevent overshoot beyond ±15 V during switching transitions.
Does DMT6012LFV-13 require external gate resistors in typical DC-DC applications?
Yes-external gate resistors (typically 2.2–10 Ω) are recommended to dampen ringing caused by gate-drain capacitance (Crss = 27.5 pF) and PCB trace inductance. Without damping, oscillations can exceed VGS ratings or cause false turn-on; resistor value balances switching speed (tR/tF) and EMI control.
How is thermal performance affected when the exposed drain pad is not soldered to a thermal plane?
Without connection to a ≥1-inch² 2 oz copper thermal pad, RθJA degrades from 64°C/W to >122°C/W. This reduces maximum continuous power dissipation from 33.78 W to <1.95 W at ambient-potentially causing thermal runaway at >5 A. Full thermal performance requires soldering all drain pins and the exposed pad to a dedicated thermal copper area.
Can DMT6012LFV-13 be used in linear regulator applications?
No-it is not characterized or rated for linear-mode operation. The Safe Operating Area (SOA) curve shows only pulse-limited operation (e.g., 10 ms at 20 A), with no DC or extended pulse capability. Linear use would exceed junction temperature limits due to uncontrolled thermal runaway; it is strictly intended for switched-mode applications.
DMT6012LFV-13 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Diodes Incorporated
- Series:
- -
- Package/Case:
- 8-PowerVDFN
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 60 V
- Current - Continuous Drain (Id) @ 25°C:
- 43.3A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 12mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id:
- 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 22.2 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 1522 pF @ 30 V
- FET Feature:
- -
- Power Dissipation (Max):
- 1.95W (Ta), 33.78W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- PowerDI3333-8 (Type UX)
DMT6012LFV-13 FAQ
1.How can I place an order for DMT6012LFV-13 through Aetrix?
Please submit a Request for Quotation (RFQ) for DMT6012LFV-13 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for DMT6012LFV-13 reliable?
The price and inventory of DMT6012LFV-13 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMT6012LFV-13 is usually 5 days.
3.What payment methods are accepted for DMT6012LFV-13?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMT6012LFV-13 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for DMT6012LFV-13?
DMT6012LFV-13 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your DMT6012LFV-13 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for DMT6012LFV-13?
For technical support, including DMT6012LFV-13 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMT6012LFV-13 requirements.
6.How does Aetrix verify that DMT6012LFV-13 is sourced from the original manufacturer or authorized distributors?
All DMT6012LFV-13 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMT6012LFV-13 meets industry standards.
7.What is the process for return or replacement of DMT6012LFV-13?
All DMT6012LFV-13 units undergo pre-shipment inspection (PSI). If there is an issue with DMT6012LFV-13, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The DMT6012LFV-13 part is unused and in its original packaging.
Return procedure for DMT6012LFV-13:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
DMT6012LFV-13 Tags
-
BSZ180P03NS3EGATMA1
Infineon Technologies
-
SIRA14DP-T1-GE3
Vishay Siliconix
-
AO4419
Alpha & Omega Semiconductor Inc.
-
SISA14BDN-T1-GE3
Vishay Siliconix
-
PSMN9R5-30YLC,115
Nexperia USA Inc.
-
BUK9Y21-40E,115
Nexperia USA Inc.
-
RTQ035N03HZGTR
Rohm Semiconductor
-
FDMS7680
onsemi
-
RQ3E180BNTB
Rohm Semiconductor
-
STL6N2VH5
STMicroelectronics
-
DMPH4029LFGQ-7
Diodes Incorporated
-
DMT6015LSS-13
Diodes Incorporated
Tech Hub
An engineering guide to LED driver operation, constant-current and constant-voltage outputs, linear and switching topologies, dimming, IC selection, calculations, replacement compatibility, and fault c…
Operational amplifier guide covering op amp basics, feedback, ideal vs real op amps, common configurations, buffer circuits, offset, bias current, gain-bandwidth, slew rate, rail-to-rail limits and sel…
Jumper cables guide covering safe connection order, red and black clamp placement, final ground connection, cable gauge, length, clamp quality, copper vs CCA cables, jump starter comparison and battery…
LDO regulator guide covering low dropout voltage, power dissipation, thermal design, PSRR, output noise, capacitor stability, adjustable LDO circuits, LDO vs buck converter and datasheet selection chec…
Conditional Access Module guide covering CAM meaning, CI/CI+ interface, smart card authorization, DVB security workflow, TV and set-top box compatibility, internal electronics, ESD protection, connecto…
Guide to electronic component obsolescence covering EOL risk, PCN/PDN notices, last-time buy planning, replacement options, form-fit-function validation, counterfeit risk and BOM lifecycle management.
18650 battery guide covering lithium-ion cell basics, 3.6V/3.7V voltage, 4.2V charging, mAh and Wh capacity, protected cells, chargers, BMS, series-parallel packs, holders, welding and sourcing checks.…
Hall effect sensor guide covering working principle, linear and digital sensors, Arduino circuits, current sensing, speed detection, automotive applications, A3144 examples, signal filtering and datash…
Product Change Notification guide for electronic components, covering PCN meaning, PCN vs PDN/EOL, common change types, risk levels, form-fit-function review, engineering validation, BOM control, LTB/L…
A practical guide to blend door actuators, covering HVAC function, symptoms, location, AC and heater issues, reset and calibration, replacement cost, electrical diagnosis, compatibility checks, and rep…
