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Diodes Incorporated DMT6012LFV-7
- Part No.:
- DMT6012LFV-7
- Manufacturer:
- Diodes Incorporated
- Category:
- FETs, MOSFETs
- Package:
- 8-PowerVDFN
- Datasheet:
-
DMT6012LFV-7.pdf
- Description:
- MOSFET N-CH 60V 43.3A PWRDI3333
- Quantity:
- Payment:
- Shipping:
Inventory:5,329
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Product details
Overview
DMT6012LFV-7 from Diodes Incorporated is a 60V N-channel enhancement-mode MOSFET in PowerDI3333-8 package, delivering 12 mΩ RDS(ON) at VGS = 10 V and 43.3 A continuous drain current at TC = +25°C. It features ESD-protected gate, 100% production-tested UIS robustness, and thermally efficient small-form-factor packaging-optimized for high-density DC-DC converters and LED backlighting power stages.
For engineers reviewing the DMT6012LFV-7 datasheet, DMT6012LFV-7 pinout, DMT6012LFV-7 application, or DMT6012LFV-7 equivalent, key selection criteria include its 12 mΩ/15 mΩ dual-drive RDS(ON), 170 A pulsed drain capability, integrated body diode with 25.8 ns reverse recovery time, and thermal resistance of 3.7°C/W (junction-to-case), critical for compact power stage thermal design.
Technical Context
This MOSFET employs trench-gate silicon process to achieve low on-resistance while maintaining fast switching performance: tD(ON) = 4.4 ns, tR = 6.7 ns, and Qg = 22.2 nC at VGS = 10 V. Its internal gate protection diode and ±20 V VGSS rating support reliable gate drive in noisy environments.
The device operates across –55°C to +150°C junction temperature range and is characterized for stable RDS(ON) behavior up to 150°C (1.6× nominal at TJ = 150°C, VGS = 10 V). Its PowerDI3333-8 package provides exposed drain pad for low-impedance thermal path and 33% board area reduction versus SO-8.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 60 V - supports 48 V bus systems with 20 % margin against transients |
| RDS(ON) max | 12 mΩ @ VGS = 10 V - enables <1.2 W conduction loss at 10 A, critical for high-efficiency buck stages |
| ID cont. | 43.3 A @ TC = +25°C - defines maximum steady-state current under heatsink-cooled conditions |
| Qg | 22.2 nC @ VGS = 10 V - determines gate driver power requirement and switching loss trade-off |
| tRR | 25.8 ns - limits reverse recovery losses and EMI in synchronous rectification |
| RθJC | 3.7°C/W - enables direct thermal coupling to PCB copper or heatsink for >30 W power dissipation |
| EAS | 28.1 mJ - quantifies single-pulse avalanche energy handling without failure, essential for inductive load switching |
Pinout & Package
Package: PowerDI3333-8 (Type UX), surface-mount, thermally enhanced with exposed drain pad. Dimensions: 3.30 mm × 3.30 mm × 0.80 mm (L × W × H); weight ≈ 0.030 g; moisture sensitivity level 1.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 3, 4, 5, 6, 7, 8 (Drain) | Power Drain / Exposed Pad | All pins 1–8 connect internally to drain; exposed bottom pad is primary thermal and electrical drain node |
| Pin 1 (Top View) | Source | Leftmost top-side terminal; referenced as source return path for gate drive and load current |
| Pin 2 (Top View) | Gate | Second top-side terminal; requires ≤±20 V drive; protected by integrated Zener clamp |
| Pin 3 (Top View) | Source | Third top-side terminal; paralleled with Pin 1 to reduce source inductance in high-di/dt switching |
Key Features
| Feature | Design Value |
|---|---|
| 100% production UIS tested | Guarantees minimum 23.7 A avalanche current and 28.1 mJ energy survival-no derating needed for inductive turn-off stress |
| Thermally optimized footprint | 33% smaller board area than SO-8; 3.7°C/W RθJC enables >2× power density in space-constrained DC-DC modules |
| Low-voltage gate drive compatibility | 15 mΩ RDS(ON) @ VGS = 4.5 V supports direct interfacing with 5 V or 3.3 V microcontroller GPIOs |
| ESD-protected gate | ±10 µA IGSS leakage at ±20 V ensures robustness against handling and system-level ESD events per IEC 61000-4-2 |
| Green, lead-free construction | Halogen- and antimony-free (<900 ppm Br/Cl, <1000 ppm Sb); RoHS 3 compliant; UL 94V-0 molding compound |
Applications
| LED Backlighting Power Stage | Point-of-Load DC-DC Converter High-Side Switch |
|---|---|
|
Use Scenario: Driving white LED strings in LCD TV and monitor backlight units with PWM dimming at 200 kHz switching frequency. IC Role / Device Role: High-efficiency synchronous rectifier and current regulation switch in boost or SEPIC topology. Use Value: 12 mΩ RDS(ON) minimizes conduction loss in 3–5 A LED current paths; 25.8 ns tRR suppresses voltage overshoot during fast PWM transitions. |
Use Scenario: High-side switch in 12 V input → 1.2 V/30 A output multiphase buck converter for FPGA or ASIC core supplies. IC Role / Device Role: Main power switch handling 30 A peak current with <1.5 VDS drop at full load. Use Value: 43.3 A ID rating and 3.7°C/W RθJC allow operation at 92% efficiency without external heatsink under 50°C ambient. |
| USB-C PD Fast Charging Power Path | Industrial Motor Driver Half-Bridge Low-Side |
|
Use Scenario: Input power path switch enabling bidirectional 100 W USB-C PD negotiation and fault isolation in portable power banks. IC Role / Device Role: Load switch controlling 20 V/5 A input rail with overcurrent and thermal shutdown coordination. Use Value: 60 V VDSS withstands 20 V PD transients; 170 A IDM handles short-circuit current limiting without avalanche degradation. |
Use Scenario: Low-side switch in 24 V brushed DC motor driver for factory automation actuators with 10 A RMS load current. IC Role / Device Role: PWM-controlled current sink in half-bridge configuration with freewheeling via internal body diode. Use Value: 40 A IS body diode rating and 25.8 ns tRR ensure clean commutation at 20 kHz PWM; 100% UIS test prevents failure during motor stall events. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| DMT6004LPS-13 | Lower RDS(ON) (4.5 mΩ @ 10 V) but higher Qg (42 nC); same 60 V rating and PowerDI3333-8 package | Better conduction loss at high current; higher gate drive loss and slower switching than DMT6012LFV-7 | Select when thermal budget allows larger gate driver; avoid in >1 MHz switching due to Qg penalty |
| SI2302DS-T1-GE3 | Smaller SOT-23 package; higher RDS(ON) (55 mΩ @ 4.5 V); lower ID (3 A) | Limited to sub-5 W loads; no exposed drain pad; unsuitable for >10 A applications | Only for ultra-low-cost, low-power logic-level switching where board area is secondary to cost |
Compared with DMT6012LFV-7, DMT6004LPS-13 trades higher gate charge for lower conduction loss-ideal for high-current, low-frequency operation-while SI2302DS-T1-GE3 serves only low-power signal-switching roles, lacking thermal capacity and current rating for power conversion use.
Availability
DMT6012LFV-7 is available at Aetrix Electronics and suitable for LED backlighting, point-of-load DC-DC converters, and USB-C PD power path management requiring stable component supply, consistent parametric performance, and long-term industrial lifecycle support.
Supply support for DMT6012LFV-7 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design, manufacturing, and sales operations across Asia, Europe, and the Americas.
The DMT6012LFV belongs to Diodes' PowerMOS™ portfolio, engineered specifically for high-efficiency, high-density power conversion in consumer, computing, and industrial applications where thermal performance and board-area savings are critical.
FAQ
What is the maximum safe operating temperature for DMT6012LFV-7?
The absolute maximum junction temperature is +150°C, and the device is rated for continuous operation across –55°C to +150°C. Thermal design must ensure TJ remains below this limit under worst-case power dissipation and ambient conditions, using RθJC = 3.7°C/W and proper PCB copper thermal vias to the internal drain pad.
Does DMT6012LFV-7 require an external gate resistor?
Yes-a gate resistor (typically 2–10 Ω) is recommended to control dV/dt and prevent ringing during switching. With Qg = 22.2 nC and typical gate driver output impedance, a 4.7 Ω resistor limits peak gate current to ~2 A and reduces EMI while preserving tR/tF within datasheet specifications.
Can DMT6012LFV-7 be used in synchronous rectification?
Yes-the device's 25.8 ns reverse recovery time (tRR) and 15.1 nC QRR make it suitable for synchronous rectification in DC-DC converters up to 500 kHz. Its low RDS(ON) and integrated body diode enable efficient replacement of Schottky diodes in buck and flyback topologies.
Is the PowerDI3333-8 package compatible with standard reflow profiles?
Yes-PowerDI3333-8 is qualified for IPC/JEDEC J-STD-020 Level 1 moisture sensitivity and supports standard lead-free reflow profiles (peak 260°C, 20–40 sec above 217°C). The matte tin finish on copper leadframe ensures reliable solderability per MIL-STD-202, Method 208.
DMT6012LFV-7 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Diodes Incorporated
- Series:
- -
- Package/Case:
- 8-PowerVDFN
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 60 V
- Current - Continuous Drain (Id) @ 25°C:
- 43.3A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 12mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id:
- 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 22.2 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 1522 pF @ 30 V
- FET Feature:
- -
- Power Dissipation (Max):
- 1.95W (Ta), 33.78W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- PowerDI3333-8 (Type UX)
DMT6012LFV-7 FAQ
1.How can I place an order for DMT6012LFV-7 through Aetrix?
Please submit a Request for Quotation (RFQ) for DMT6012LFV-7 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for DMT6012LFV-7 reliable?
The price and inventory of DMT6012LFV-7 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMT6012LFV-7 is usually 5 days.
3.What payment methods are accepted for DMT6012LFV-7?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMT6012LFV-7 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for DMT6012LFV-7?
DMT6012LFV-7 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your DMT6012LFV-7 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for DMT6012LFV-7?
For technical support, including DMT6012LFV-7 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMT6012LFV-7 requirements.
6.How does Aetrix verify that DMT6012LFV-7 is sourced from the original manufacturer or authorized distributors?
All DMT6012LFV-7 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMT6012LFV-7 meets industry standards.
7.What is the process for return or replacement of DMT6012LFV-7?
All DMT6012LFV-7 units undergo pre-shipment inspection (PSI). If there is an issue with DMT6012LFV-7, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The DMT6012LFV-7 part is unused and in its original packaging.
Return procedure for DMT6012LFV-7:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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