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Diodes Incorporated DMT6012LPSW-13

Part No.:
DMT6012LPSW-13
Manufacturer:
Diodes Incorporated
Category:
FETs, MOSFETs
Package:
8-PowerTDFN
Datasheet:
AetrixDMT6012LPSW-13.pdf
Description:
MOSFET BVDSS: 41V~60V POWERDI506
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:4,120

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Product details

Overview

DMT6012LPSW from Diodes Incorporated is a 60V N-channel enhancement-mode MOSFET in PowerDI5060-8 (SWP) package, featuring 12 mΩ RDS(ON) @ VGS = 10 V, 31.5 A continuous drain current at TC = +25°C, and 100% production-tested UIS robustness. It serves as a high-efficiency synchronous rectifier or primary/secondary-side switch in DC-DC converters.

For engineers reviewing the DMT6012LPSW datasheet, DMT6012LPSW pinout, DMT6012LPSW application, or DMT6012LPSW equivalent, key selection criteria include low RDS(ON) at 4.5 V gate drive, wettable flank for automated optical inspection, and thermal resistance RθJC = 7.0 °C/W for high-power-density board layouts.

Technical Context

This MOSFET employs a trench-gate silicon process optimized for low conduction loss and fast switching. Its 1522 pF input capacitance (Ciss) and 22.2 nC total gate charge (Qg @ VGS = 10 V) support efficient operation in 300–1000 kHz DC-DC topologies with minimal driver loss.

The device integrates an ESD-protected gate and features a body diode with 25.8 ns reverse recovery time (tRR) and 15.1 nC QRR, enabling reliable synchronous rectification without external Schottky replacement in medium-voltage buck or LLC secondary-side designs.

Key Specifications

ParameterValue and Actual Design Meaning
VDSS60 V - Supports 48 V input bus systems with 20 % derating margin
RDS(ON)12 mΩ @ VGS = 10 V - Enables ≤0.75 W conduction loss at 20 A
ID (continuous)31.5 A @ TC = +25°C - Sustains high-current output stages without forced air
Qg22.2 nC @ VGS = 10 V - Determines gate driver power requirement and switching speed trade-off
tRR25.8 ns - Limits body diode reverse recovery loss during hard-switched transitions
RθJC7.0 °C/W - Allows direct thermal coupling to PCB copper pour or heatsink for <100 °C junction rise at 17.9 W dissipation
EAS39.5 mJ - Confirmed avalanche energy rating ensures reliability under inductive load transients

Pinout & Package

Package: PowerDI5060-8 (SWP), surface-mount, exposed-drain thermal pad, wettable flank terminals, RoHS-compliant matte tin finish over copper leadframe.

Pin/TerminalCircuit RoleDesign Meaning
Pin 1 (S)SourceCommon return node for load current; tied to PCB ground plane for low-inductance path
Pins 2–5, 7–8 (D)DrainParallel-connected high-current drain terminals; soldered to large copper area for thermal conduction
Pin 6 (G)GateControl input requiring <22.2 nC charge; isolated from drain by 1.4 Ω gate resistance
Exposed Pad (D)Drain (Thermal)Primary thermal interface; must be connected to internal/external copper pour for RθJC = 7.0 °C/W performance

Key Features

FeatureDesign Value
100% UIS testedGuarantees minimum 16.3 A avalanche current and 39.5 mJ single-pulse energy handling in production
Wettable flank terminalsEnables automated optical inspection (AOI) of solder fillet on all eight side terminals
Low Ciss/Coss ratio1522 pF / 352 pF supports ZVS/ZCS soft-switching in resonant converters
ESD-protected gateWithstands ±10 µA gate leakage at ±20 V, reducing risk of gate oxide damage during handling
Green compound (94V-0)Halogen-free molding compound meets IEC 61249-2-21 and automotive flammability requirements

Applications

Server VRM Output StageAutomotive ADAS Power Supply

Use Scenario: High-current, high-frequency buck converter delivering 12 V @ 40 A to CPU/GPU core rails.

IC Role / Device Role / Timing Role: Synchronous rectifier switch operating at 600 kHz with 10 V gate drive.

Use Value: 12 mΩ RDS(ON) reduces conduction loss by 35 % vs. comparable 18 mΩ devices, improving full-load efficiency by ≥0.8 %.

Use Scenario: 5 V/3 A auxiliary supply in radar control unit, powered from 12 V battery with transient immunity.

IC Role / Device Role / Timing Role: Primary-side switch in isolated flyback regulator with 100 % UIS-rated operation.

Use Value: 39.5 mJ EAS withstands load-dump transients up to ISO 7637-2 Pulse 5a without failure.

Industrial PoE++ PSEUSB-C PD 60 W Adapter

Use Scenario: 57 V Class 8 PSE power switch managing up to 90 W per port with hot-swap sequencing.

IC Role / Device Role / Timing Role: High-side switch controlling power delivery with integrated current sensing.

Use Value: 60 V VDSS provides 15 % margin above 48 V PoE++ maximum, while 17 mΩ @ 4.5 V enables logic-level microcontroller control.

Use Scenario: Secondary-side synchronous rectifier in 60 W GaN-based USB-C adapter operating at 200 kHz.

IC Role / Device Role / Timing Role: Low-loss rectifier replacing Schottky diode in LLC resonant topology.

Use Value: 25.8 ns tRR minimizes reverse recovery loss, increasing light-load efficiency by 1.2 % versus standard Si FETs.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
DMT6006LPSW-136 mΩ RDS(ON) @ 10 V, same package, higher gate charge (27.5 nC)Better conduction loss but slower switching; requires stronger gate driverSelect when thermal budget is tighter than drive capability constraints
SiR626DP-T1-GE36.2 mΩ @ 10 V, PowerPAK SO-8, no wettable flank, higher RθJA (50 °C/W)Limited AOI compatibility; less effective PCB thermal spreadingSelect only if existing SO-8 footprint reuse is mandatory and optical inspection is not required

Compared with DMT6012LPSW, DMT6006LPSW delivers lower conduction loss but increases gate drive loss and layout complexity, while SiR626DP trades thermal performance and manufacturability for legacy footprint compatibility-making DMT6012LPSW optimal for new designs prioritizing AOI yield and balanced switching/conduction efficiency.

Availability

DMT6012LPSW is available at Aetrix Electronics and suitable for server VRMs, automotive ADAS power supplies, industrial PoE++ PSEs, and USB-C PD adapters requiring stable component supply, long-term lifecycle assurance, and traceable green sourcing.

Supply support for DMT6012LPSW includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design, manufacturing, and sales operations across Asia, Europe, and the Americas.

This device belongs to Diodes' Power MOSFET product line, engineered specifically for high-efficiency, high-reliability power conversion in computing, automotive, and industrial applications where thermal performance and production test rigor are critical.

FAQ

What is the maximum safe operating temperature for DMT6012LPSW?

The junction temperature must not exceed +150°C under any condition. With RθJC = 7.0 °C/W and a typical PCB copper pour achieving ~25 °C/W RθJA, sustained 31.5 A drain current requires case temperature ≤85°C. Derating curves in Figure 12 confirm 12.5 A is sustainable at TA = +70°C with standard FR-4 mounting.

Does DMT6012LPSW support 4.5 V logic-level gate drive?

Yes. The device delivers 17 mΩ RDS(ON) at VGS = 4.5 V and ID = 12.5 A, verified per datasheet Table "Electrical Characteristics." Gate threshold voltage (VGS(TH)) ranges from 1.0 V to 2.5 V, ensuring reliable turn-on with standard 3.3 V or 5 V microcontroller outputs when combined with appropriate gate resistor sizing.

How does the wettable flank feature improve manufacturing yield?

The chamfered, solderable side terminals enable automated optical inspection (AOI) of solder fillet height and wetting on all eight pins-critical for detecting head-in-pillow, insufficient solder, or bridging defects in high-volume SMT lines. This eliminates reliance on X-ray for quality verification and reduces rework rates in fine-pitch PowerDI5060-8 assemblies.

Is DMT6012LPSW qualified for automotive applications?

No. While the device meets AEC-Q101 stress-test conditions in principle, it is not officially AEC-Q101 qualified or PPAP-capable per Diodes' documentation. For automotive use, Diodes recommends contacting their applications team for qualified alternatives such as the DMT6012LPSW-A, which includes IATF 16949 manufacturing, AEC-Q101 qualification, and extended temperature screening.

DMT6012LPSW-13 Specifications

Product attributes
Attribute value
Manufacturer:
Diodes Incorporated
Series:
-
Package/Case:
8-PowerTDFN
Packaging:
Tape & Reel (TR)
Product Status:
Active
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
60 V
Current - Continuous Drain (Id) @ 25°C:
13.1A (Ta), 31.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
Rds On (Max) @ Id, Vgs:
12mOhm @ 20A, 10V
Vgs(th) (Max) @ Id:
2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:
22.2 nC @ 10 V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
1522 pF @ 30 V
FET Feature:
-
Power Dissipation (Max):
3.1W (Ta), 17.9W (Tc)
Operating Temperature:
-55°C ~ 150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount, Wettable Flank
Supplier Device Package:
PowerDI5060-8 (Type UX)

DMT6012LPSW-13 FAQ

1.How can I place an order for DMT6012LPSW-13 through Aetrix?

Please submit a Request for Quotation (RFQ) for DMT6012LPSW-13 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for DMT6012LPSW-13 reliable?

The price and inventory of DMT6012LPSW-13 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMT6012LPSW-13 is usually 5 days.

3.What payment methods are accepted for DMT6012LPSW-13?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMT6012LPSW-13 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for DMT6012LPSW-13?

DMT6012LPSW-13 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your DMT6012LPSW-13 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for DMT6012LPSW-13?

For technical support, including DMT6012LPSW-13 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMT6012LPSW-13 requirements.

6.How does Aetrix verify that DMT6012LPSW-13 is sourced from the original manufacturer or authorized distributors?

All DMT6012LPSW-13 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMT6012LPSW-13 meets industry standards.

7.What is the process for return or replacement of DMT6012LPSW-13?

All DMT6012LPSW-13 units undergo pre-shipment inspection (PSI). If there is an issue with DMT6012LPSW-13, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The DMT6012LPSW-13 part is unused and in its original packaging.

Return procedure for DMT6012LPSW-13:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

DMT6012LPSW-13 Tags

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