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Diodes Incorporated DMT6013LFDF-13
- Part No.:
- DMT6013LFDF-13
- Manufacturer:
- Diodes Incorporated
- Category:
- FETs, MOSFETs
- Package:
- 6-UDFN Exposed Pad
- Datasheet:
-
DMT6013LFDF-13.pdf
- Description:
- MOSFET N-CH 60V 10A 6UDFN
- Quantity:
- Payment:
- Shipping:
Inventory:8,357
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Product details
Overview
DMT6013LFDF-13 from Diodes Incorporated is a 60V N-channel enhancement-mode MOSFET in U-DFN2020-6 (Type F) package, delivering 15 mΩ RDS(ON) at VGS = 10 V and 21.5 mΩ at 4.5 V, with 10.0 A continuous drain current at TA = +25°C. It is engineered for high-efficiency DC/DC converters and wireless charging switches where low conduction loss and compact footprint are critical.
For engineers reviewing the DMT6013LFDF-13 datasheet, DMT6013LFDF-13 pinout, DMT6013LFDF-13 application, or DMT6013LFDF-13 equivalent, key selection criteria include its 0.6 mm profile, 4 mm² PCB footprint, 100% UIS-tested ruggedness, and thermal resistance of 67 °C/W (with enhanced pad layout).
Technical Context
This MOSFET employs a trench-gate silicon process optimized for simultaneous low RDS(ON) and fast switching performance. Its gate threshold voltage (1–2.3 V) enables compatibility with 3.3 V and 5 V logic-level drive, while its 15.8 ns turn-off delay and 6.1 ns fall time support high-frequency synchronous rectification.
The device integrates a robust body diode with 19.7 ns reverse recovery time and 9.5 nC QRR, validated under 100 A/µs di/dt conditions. Its U-DFN2020-6 package features NiPdAu-plated terminals and meets J-STD-020 Level 1 moisture sensitivity for reflow compatibility.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 60 V - Supports input rails up to 48 V nominal systems with 20 % margin for transients. |
| RDS(ON) @ 10 V | 15 mΩ max - Enables ≤150 mW conduction loss at 10 A, critical for thermally constrained adapters. |
| RDS(ON) @ 4.5 V | 21.5 mΩ max - Ensures reliable operation with 5 V gate drive in USB PD and buck controller applications. |
| ID (TA = 25°C) | 10.0 A - Sustains full-load current in 25 W–30 W DC/DC stages without forced cooling. |
| Qg @ 10 V | 15 nC - Reduces gate drive power and enables efficient operation with standard PWM controllers. |
| trr | 19.7 ns - Minimizes body diode switching loss and voltage overshoot in synchronous rectifiers. |
| RθJA (enhanced pad) | 67 °C/W - Allows 1.2 W continuous dissipation at 70°C ambient, supporting compact board layouts. |
Pinout & Package
U-DFN2020-6 (Type F) package: 2.0 × 2.0 × 0.6 mm, bottom-exposed thermal pad, no leads, RoHS-compliant NiPdAu finish. Pin 1 marked by chamfered corner per Diodes Inc. outline drawing.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (G) | Gate | Control terminal; accepts 0–20 V gate-source swing; 1.22 Ω gate resistance limits ringing. |
| 2 (S) | Source | Reference node for gate drive and current sensing; tied to thermal pad for low-inductance return path. |
| 3 (D) | Drain | Main power output node; connects to switched node in buck topology; handles 60 A pulsed current. |
| 4 (S) | Source | Second source connection-electrically identical to Pin 2; improves current sharing and thermal spreading. |
| 5 (D) | Drain | Second drain connection-electrically identical to Pin 3; reduces package inductance in high-dI/dt paths. |
| 6 (Thermal Pad) | Exposed Drain | Internally connected to drain; must be soldered to PCB copper pour for thermal and electrical integrity. |
Key Features
| Feature | Design Value |
|---|---|
| 100% UIS tested | Guarantees avalanche energy handling up to 6.8 mJ (IAS = 11.7 A), eliminating need for external snubbers in inductive loads. |
| 0.6 mm profile | Enables ultra-thin end equipment (e.g., slim wall adapters, portable wireless chargers) without sacrificing thermal performance. |
| 4 mm² footprint | Reduces PCB area by >50 % vs. SO-8 equivalents, freeing space for magnetics and filtering in high-density power modules. |
| Halogen & antimony free | Meets <900 ppm Br/Cl and <1000 ppm Sb thresholds-certified "Green" per Diodes Inc. definition for eco-sensitive markets. |
| Low Qgd/Qgs ratio | 4.4 nC / 2.2 nC = 2.0 - Improves hard-switching immunity and reduces Miller-induced shoot-through risk in half-bridge configurations. |
Applications
| DC/DC Converter | USB-C Power Delivery Adapter |
|---|---|
|
Use Scenario: Primary-side synchronous rectifier in 25 W buck converter for industrial IoT gateway power supply. IC Role / Device Role: Low-side switch controlling output current path with minimal conduction loss. Use Value: 15 mΩ RDS(ON) at 10 V reduces rectifier loss by 35 % vs. comparable 25 mΩ MOSFET, improving full-load efficiency to ≥94 %. |
Use Scenario: Secondary-side switch in 45 W USB-C PD adapter with programmable output (5–20 V). IC Role / Device Role: High-frequency switching element in synchronous rectification stage driven by PI3001 controller. Use Value: 19.7 ns trr and 9.5 nC QRR suppress voltage spikes during body diode commutation, enabling stable 300 kHz operation. |
| Wireless Charging Transmitter | Portable Medical Sensor Power Stage |
|
Use Scenario: Half-bridge high-side switch in 15 W Qi-compliant transmitter coil driver. IC Role / Device Role: Fast-switching power transistor handling 10 A peak resonant current at 125 kHz. Use Value: 6.1 ns tF and 15.8 ns tD(OFF) minimize dead-time losses, increasing power transfer efficiency by 2.1 % over legacy 30 ns devices. |
Use Scenario: Battery protection switch in Class II medical wearable with Li-ion battery and isolated monitoring. IC Role / Device Role: Load switch isolating battery from system during fault or standby, rated for 60 V surge tolerance. Use Value: 60 V VDSS and 100 % UIS rating ensure survival during ESD events and load dump transients in ungrounded patient-worn devices. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| DMN6013LFG-7 | Same die, but in SOT-23-6 package; RDS(ON) identical, but RθJA = 139 °C/W (no thermal pad). | Limited to ≤0.5 W continuous power; unsuitable for >5 W adapters without heatsinking. | Select when board space permits larger footprint and thermal management is passive-only. |
| AOB2032L | 60 V, 12 mΩ @ 10 V, but in 3×3 mm DFN; Qg = 22 nC (47 % higher); trr = 25 ns. | Higher gate charge increases driver stress; longer trr risks oscillation in 300+ kHz designs. | Prefer only if lower RDS(ON) justifies added gate drive complexity and reduced switching speed. |
Compared with DMT6013LFDF-13, DMN6013LFG-7 trades thermal performance for legacy package compatibility, while AOB2032L offers lower on-resistance at the cost of slower switching and higher drive demand-making DMT6013LFDF-13 optimal for space-constrained, high-frequency, thermally sensitive applications.
Availability
DMT6013LFDF-13 is available at Aetrix Electronics and suitable for DC/DC converters, USB-C power adapters, and wireless charging transmitters requiring stable component supply across production ramps and long-life programs.
Supply support for DMT6013LFDF-13 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design centers across Asia and manufacturing in China, Taiwan, and the US.
This MOSFET belongs to Diodes' "PowerMOS" portfolio, designed specifically for high-efficiency, high-density power conversion in consumer, industrial, and computing applications where thermal and footprint constraints dominate.
FAQ
What is the maximum safe operating junction temperature for DMT6013LFDF-13?
The absolute maximum junction temperature is +150°C, and the device is characterized down to –55°C. Derating begins at +70°C ambient for the 1.9 W power rating (with enhanced pad), and thermal shutdown is not integrated-external thermal monitoring is required for sustained high-temperature operation.
Is DMT6013LFDF-13 suitable for 3.3 V logic-level gate drive?
No-its gate threshold voltage range is 1.0–2.3 V, but RDS(ON) rises sharply below 4.5 V: at 3.3 V, typical RDS(ON) exceeds 35 mΩ, causing excessive conduction loss. It requires ≥4.5 V gate drive for specified performance, making it compatible with 5 V microcontrollers and dedicated gate drivers-not 3.3 V I/O directly.
How should the exposed thermal pad be connected on the PCB?
The exposed pad (Pin 6) is internally connected to the drain and must be soldered to a solid copper pour tied to the main power ground plane. Minimum recommended pad size is 1.15 × 1.15 mm with 4–6 thermal vias (0.3 mm diameter) to inner ground layers-per Diodes' suggested layout-to achieve the 67 °C/W RθJA rating.
Does DMT6013LFDF-13 have integrated ESD protection on the gate?
Yes-the gate oxide is rated for ±20 V VGSS, and the device passes HBM ESD testing per JEDEC JS-001 (≥2 kV). However, no dedicated gate protection diodes are integrated; external 10 Ω gate resistor and TVS clamp are recommended in high-noise environments like automotive or industrial motor drives.
DMT6013LFDF-13 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Diodes Incorporated
- Series:
- -
- Package/Case:
- 6-UDFN Exposed Pad
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 60 V
- Current - Continuous Drain (Id) @ 25°C:
- 10A (Ta)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 15mOhm @ 8.5A, 10V
- Vgs(th) (Max) @ Id:
- 2.3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 15 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 1081 pF @ 30 V
- FET Feature:
- -
- Power Dissipation (Max):
- 900mW (Ta)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- U-DFN2020-6 (Type F)
DMT6013LFDF-13 FAQ
1.How can I place an order for DMT6013LFDF-13 through Aetrix?
Please submit a Request for Quotation (RFQ) for DMT6013LFDF-13 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for DMT6013LFDF-13 reliable?
The price and inventory of DMT6013LFDF-13 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMT6013LFDF-13 is usually 5 days.
3.What payment methods are accepted for DMT6013LFDF-13?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMT6013LFDF-13 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for DMT6013LFDF-13?
DMT6013LFDF-13 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your DMT6013LFDF-13 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for DMT6013LFDF-13?
For technical support, including DMT6013LFDF-13 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMT6013LFDF-13 requirements.
6.How does Aetrix verify that DMT6013LFDF-13 is sourced from the original manufacturer or authorized distributors?
All DMT6013LFDF-13 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMT6013LFDF-13 meets industry standards.
7.What is the process for return or replacement of DMT6013LFDF-13?
All DMT6013LFDF-13 units undergo pre-shipment inspection (PSI). If there is an issue with DMT6013LFDF-13, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The DMT6013LFDF-13 part is unused and in its original packaging.
Return procedure for DMT6013LFDF-13:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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