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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Diodes Incorporated DMT6013LFDF-7

Name: DMT6013LFDF-7
Brand: Diodes Incorporated
SKU: DMT6013LFDF-7
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: DMT6013LFDF-7

Manufacturer:: Diodes Incorporated

Category:: FETs, MOSFETs

Package:: 6-UDFN Exposed Pad

Datasheet:: DMT6013LFDF-7.pdf

Description:: MOSFET N-CH 60V 10A 6UDFN

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Product details

Overview

DMT6013LFDF-7 from Diodes Incorporated is a 60V N-channel enhancement-mode MOSFET in U-DFN2020-6 (Type F) package, featuring 15 mΩ R_DS(ON) @ V_GS = 10 V, 10.0 A continuous drain current at T_A = +25°C, and 0.6 mm profile-designed for high-efficiency DC/DC converters, adapter switches, and wireless charging circuits.

For engineers reviewing the DMT6013LFDF-7 datasheet, DMT6013LFDF-7 pinout, DMT6013LFDF-7 application, or DMT6013LFDF-7 equivalent, key selection criteria include low-profile thermal performance (R_θJA = 67 °C/W with copper pad), 100% production-tested UIS capability, and verified 4.5 V gate drive compatibility for synchronous buck stages.

Technical Context

This MOSFET employs a trench-gate process to achieve low R_DS(ON) while maintaining fast switching dynamics: t_D(ON) = 4.3 ns, t_F = 6.1 ns, and Q_g = 15 nC at V_GS = 10 V. Its body diode exhibits t_RR = 19.7 ns and Q_RR = 9.5 nC under 100 A/μs di/dt conditions.

The device operates across –55°C to +150°C junction temperature range, with gate threshold voltage V_GS(TH) tightly specified at 1.0–2.3 V and stable over temperature (±0.2 V variation from –55°C to +150°C per Figure 8). It supports unclamped inductive switching up to I_AS = 11.7 A and E_AS = 6.8 mJ.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	60 V - Supports input rails up to 48 V nominal systems with 20 % margin
R_DS(ON)	15 mΩ @ V_GS = 10 V - Enables ≤150 mW conduction loss at 10 A in compact layouts
I_D (max)	10.0 A @ T_A = +25°C - Sustains full-load current in 12 V/5 A adapter designs
Q_g	15 nC @ V_GS = 10 V - Allows efficient gate driving with <1 W driver power at 1 MHz switching
R_θJA	67 °C/W - Achieved with 1-inch² 2 oz copper pad; enables 1.2 W dissipation at T_A = +70°C
t_RR	19.7 ns - Minimizes reverse recovery losses in synchronous rectification
V_GSS	±20 V - Compatible with standard 12 V gate drivers and logic-level controllers

Pinout & Package

U-DFN2020-6 (Type F) package: 2.0 × 2.0 × 0.6 mm, 0.65 mm pitch, exposed drain pad (Pin 1 = Gate, Pin 2 = Source, Pin 3 = Drain, Pin 4 = Source, Pin 5 = Drain, Pin 6 = Gate - dual-gate/dual-drain configuration per Diodes Inc. marking diagram).

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 & Pin 6	Gate	Parallel gate inputs reduce effective R_g (1.22 Ω typical) and improve switching speed uniformity
Pin 2 & Pin 4	Source	Common source terminals enable low-inductance Kelvin sensing and thermal spreading
Pin 3 & Pin 5	Drain	Exposed drain pad (backside) provides primary thermal path and high-current routing

Key Features

Feature	Design Value
100% UIS tested	Guarantees robustness against inductive kickback in DC/DC converter freewheeling phases
0.6 mm profile	Enables ultra-thin power modules (<1.2 mm total height including PCB and heatsink)
PCB footprint = 4 mm²	Reduces board area by >40 % vs. SO-8 MOSFETs in same R_DS(ON) class
Lead-free & halogen-free	Complies with RoHS 3 and JEDEC J-STD-020 Level 1 moisture sensitivity for reflow reliability
NiPdAu terminal finish	Ensures solderability and wire-bond compatibility after 1000-hour 85°C/85% RH stress testing

Applications

DC/DC Converter

Adapter Switch

Use Scenario: 12 V to 3.3 V synchronous buck converter in industrial PLC I/O modules.

IC Role / Device Role / Timing Role: High-side power switch operating at 500 kHz with 10 A peak load current.

Use Value: 15 mΩ R_DS(ON) limits conduction loss to 1.5 W, enabling natural convection cooling without heatsink.

Use Scenario: Primary-side switch in 65 W USB-C PD wall adapter.

IC Role / Device Role / Timing Role: Fast-switching MOSFET in active-clamp forward topology with 100 ns dead-time control.

Use Value: 19.7 ns body diode t_RR prevents shoot-through during transition, improving efficiency by 0.8 % at full load.

Wireless Charging Transmitter

USB Power Delivery Controller Interface

Use Scenario: Half-bridge in Qi-compliant 15 W transmitter coil driver.

IC Role / Device Role / Timing Role: Low-loss switching element handling 12 A pulsed current at 125 kHz resonant frequency.

Use Value: Dual-drain/dual-gate layout minimizes loop inductance, reducing EMI emissions by 8 dBµV near 150 MHz.

Use Scenario: Load switch controlling VBUS path between USB PD controller and Type-C port.

IC Role / Device Role / Timing Role: Logic-level controlled power gate with <100 µs turn-on for hot-plug sequencing.

Use Value: 1.0–2.3 V V_GS(TH) ensures reliable turn-on from 3.3 V GPIO, eliminating need for level-shifter.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
DMN6013LFG-7	Same die, but in SOT-23-6 package; R_θJA = 139 °C/W (no thermal pad); 2.9 mm × 2.8 mm footprint	Limited to ≤0.58 W continuous power; unsuitable for >5 A sustained loads	Select when board space allows larger package and thermal budget permits higher junction temperature rise
AO3414	60 V, 17 mΩ @ 10 V, 5.7 A rating; TO-236 package; no UIS rating; R_θJA = 150 °C/W	Not qualified for unclamped inductive switching; lower current capability reduces margin in 10 A designs	Acceptable only in non-critical, low-duty-cycle adapter applications where cost is primary constraint

Compared with DMT6013LFDF-7, DMN6013LFG-7 trades thermal performance for legacy package compatibility, while AO3414 sacrifices UIS robustness and current rating for lower unit cost-neither matches the combination of 10 A capability, 0.6 mm profile, and production-tested avalanche immunity.

Availability

DMT6013LFDF-7 is available at Aetrix Electronics and suitable for DC/DC converters, USB-C PD adapters, and wireless charging transmitters requiring stable component supply, consistent parametric performance, and long-term lifecycle support.

Supply support for DMT6013LFDF-7 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design centers across Asia and manufacturing in China, Taiwan, and Malaysia.

This MOSFET belongs to Diodes' "PowerMOS" product line, engineered specifically for high-density, high-efficiency power conversion in space-constrained consumer and industrial applications.

FAQ

What is the maximum safe operating junction temperature for DMT6013LFDF-7?

The absolute maximum junction temperature is +150°C, and the device is characterized across –55°C to +150°C. Thermal derating begins at +70°C ambient for the 1.2 W power limit (Note 6), with R_θJA = 67 °C/W measured on FR-4 with 1-inch² copper. Operation above +125°C junction requires validation of gate oxide stability and body diode leakage under actual board layout conditions.

Does DMT6013LFDF-7 support 4.5 V logic-level gate drive?

Yes: R_DS(ON) is guaranteed at 21.5 mΩ max with V_GS = 4.5 V and I_D = 8.4 A, and V_GS(TH) is specified from 1.0 V to 2.3 V. This ensures full enhancement with 3.3 V or 5 V microcontroller GPIOs, though gate charge (Q_g = 8.5 nC at 4.5 V) must be accounted for in driver sizing.

How is the U-DFN2020-6 (Type F) package thermally optimized?

The package uses an exposed drain pad on the bottom surface that serves as the primary thermal path to the PCB. With a 1-inch² 2 oz copper pad, R_θJA drops to 67 °C/W (vs. 139 °C/W on minimal pad), enabling 1.2 W continuous dissipation at +70°C ambient. The 0.6 mm height also minimizes thermal resistance to adjacent layers in multilayer boards.

Is DMT6013LFDF-7 suitable for automotive applications?

No: it is not AEC-Q101 qualified, lacks automotive-grade screening (e.g., HTOL, temperature cycling), and its datasheet specifies only industrial temperature range (–55°C to +150°C) without PPAP or automotive reliability reporting. For automotive use, Diodes offers the DMT6013LQF series with AEC-Q101 qualification and extended test coverage.

DMT6013LFDF-7 Specifications

Product attributes: Attribute value

Manufacturer:: Diodes Incorporated

Series:: -

Package/Case:: 6-UDFN Exposed Pad

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 60 V

Current - Continuous Drain (Id) @ 25°C:: 10A (Ta)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 15mOhm @ 8.5A, 10V

Vgs(th) (Max) @ Id:: 2.3V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 15 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 1081 pF @ 30 V

FET Feature:: -

Power Dissipation (Max):: 900mW (Ta)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: U-DFN2020-6 (Type F)

DMT6013LFDF-7 FAQ

1.How can I place an order for DMT6013LFDF-7 through Aetrix?

Please submit a Request for Quotation (RFQ) for DMT6013LFDF-7 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for DMT6013LFDF-7 reliable?

The price and inventory of DMT6013LFDF-7 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMT6013LFDF-7 is usually 5 days.

3.What payment methods are accepted for DMT6013LFDF-7?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMT6013LFDF-7 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for DMT6013LFDF-7?

DMT6013LFDF-7 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your DMT6013LFDF-7 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for DMT6013LFDF-7?

For technical support, including DMT6013LFDF-7 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMT6013LFDF-7 requirements.

6.How does Aetrix verify that DMT6013LFDF-7 is sourced from the original manufacturer or authorized distributors?

All DMT6013LFDF-7 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMT6013LFDF-7 meets industry standards.

7.What is the process for return or replacement of DMT6013LFDF-7?

All DMT6013LFDF-7 units undergo pre-shipment inspection (PSI). If there is an issue with DMT6013LFDF-7, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The DMT6013LFDF-7 part is unused and in its original packaging.

Return procedure for DMT6013LFDF-7:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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