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Diodes Incorporated DMT6013LSS-13
- Part No.:
- DMT6013LSS-13
- Manufacturer:
- Diodes Incorporated
- Category:
- FETs, MOSFETs
- Package:
- 8-SOIC (0.154", 3.90mm Width)
- Datasheet:
-
DMT6013LSS-13.pdf
- Description:
- MOSFET N-CH 60V 10A 8SO
- Quantity:
- Payment:
- Shipping:
Inventory:3,649
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Product details
Overview
DMT6013LSS-13 from Diodes Incorporated is a 60V N-channel enhancement-mode MOSFET in SO-8 package, rated for 10A continuous drain current at VGS = 10V, with RDS(ON) = 14.3 mΩ (max), optimized for synchronous rectification and high-frequency DC-DC converters in industrial power supplies.
For engineers reviewing the DMT6013LSS-13 datasheet, DMT6013LSS-13 pinout, DMT6013LSS-13 application, or DMT6013LSS-13 equivalent, key selection criteria include its low RDS(ON) at 4.5V (21 mΩ max), 100% UIS-tested robustness, SO-8 thermal performance (RθJA = 60.4°C/W with 2oz copper), and body diode recovery charge (QRR = 9.5 nC) for hard-switched topologies.
Technical Context
This MOSFET employs a trench-gate process to achieve low on-resistance while maintaining fast switching (tD(ON) = 4.3 ns, tF = 6.1 ns) and low gate charge (Qg = 15 nC at VGS = 10V). Its 17.1A avalanche current rating and 14.6 mJ EAS support reliable operation under inductive load transients.
The device features a fully characterized body diode with VSD = 0.7–1.2 V at IS = 1A and tRR = 19.7 ns, enabling efficient reverse recovery in synchronous buck stages. Thermal design is supported by validated RθJC = 25.7°C/W and transient thermal resistance curves up to single-pulse conditions.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 60 V - Withstands up to 60V drain-source blocking voltage in off-state, suitable for 48V bus and PoE applications. |
| RDS(ON) @ 10V | 14.3 mΩ max - Enables <1.4W conduction loss at 10A, critical for high-efficiency 12V/48V output rails. |
| RDS(ON) @ 4.5V | 21 mΩ max - Supports logic-level gate drive from 3.3V/5V controllers without level-shifting. |
| Qg | 15 nC @ 10V - Low total gate charge reduces driver power and enables >1 MHz switching in compact converters. |
| tRR | 19.7 ns - Fast body diode recovery minimizes shoot-through risk and switching losses in synchronous rectification. |
| EAS | 14.6 mJ - Confirmed avalanche energy rating ensures survivability during unclamped inductive turn-off events. |
| RθJA | 60.4°C/W - Measured on 2oz FR-4 board with thermal pad; enables ~35°C rise at 1.4W dissipation for stable thermal margin. |
Pinout & Package
Package: SO-8 (Surface-mount, 8-pin small-outline integrated circuit), molded green plastic housing (UL 94V-0), matte tin-plated copper leadframe, moisture sensitivity level 1.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 3, 4 | Source (S) | Common source connection; pins 1–4 internally bonded together for low-inductance, high-current return path. |
| 5, 6, 7, 8 | Drain (D) | Power drain terminals; pins 5–8 tied to exposed drain paddle for enhanced thermal and current handling. |
| Gate (G) | Control input | Pin 3 is gate terminal - isolated control node with 1.22 Ω gate resistance and 22 pF Crss for predictable Miller effect management. |
Key Features
| Feature | Design Value |
|---|---|
| 100% UIS tested | Every unit validated for unclamped inductive switching up to 17.1A/14.6mJ, eliminating field failure risk in flyback or boost converters. |
| Low Qgd/Qgs ratio | Qgd = 4.4 nC, Qgs = 2.2 nC - 2:1 ratio improves hard-switching immunity and reduces gate oscillation during dV/dt transitions. |
| Green compound & RoHS3 | Halogen- and antimony-free molding compound (<900 ppm Br/Cl, <1000 ppm Sb), compliant with EU Directive 2015/863/EU. |
| Thermally enhanced SO-8 | Exposed drain paddle connected to pins 5–8 delivers RθJC = 25.7°C/W, enabling direct heatsinking to PCB ground plane. |
Applications
| Server VRM | Industrial DC-DC |
|---|---|
Use Scenario: High-density 12V-to-1V point-of-load converter in dual-processor server motherboards. IC Role / Device Role / Timing Role: Synchronous rectifier in buck converter's low-side position, switching at 600 kHz with 3.3V gate drive. Use Value: 21 mΩ RDS(ON) at 4.5V enables >94% efficiency at 60A load, reducing thermal footprint versus discrete alternatives. | Use Scenario: 48V-to-12V intermediate bus converter in programmable logic controller (PLC) power module. IC Role / Device Role / Timing Role: Primary-side switch in active-clamp forward topology, operating at 250 kHz with 10V gate drive. Use Value: 14.3 mΩ RDS(ON) limits conduction loss to <0.9W at 8A, supporting full-load operation within 70°C ambient. |
| USB PD Adapter | Automotive Infotainment |
Use Scenario: Secondary-side synchronous rectifier in 100W GaN-based USB PD 3.1 adapter. IC Role / Device Role / Timing Role: Low-side FET in QR flyback secondary, driven by self-driven or controller-synchronized gate signal. Use Value: 19.7 ns tRR and 9.5 nC QRR minimize reverse recovery loss, improving efficiency by 1.2% over standard Schottky solutions. | Use Scenario: Power switch for display backlight LED driver in automotive head unit with 12V battery input. IC Role / Device Role / Timing Role: PWM-controlled high-side switch (with level shifter) regulating constant-current LED strings. Use Value: 60V VDSS and -55°C to +150°C TJ range ensure reliability across cold-crank (-40°C) and under-hood (125°C) conditions. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| DMT6004LPS-13 | RDS(ON) = 4.5 mΩ @ 10V (lower), but SO-8EP package with larger thermal pad and higher ID = 16A. | Better suited for higher-current (>12A), lower-loss designs where PCB space allows enhanced thermal layout. | Select when thermal budget is tighter and peak current exceeds 10A; requires updated layout for EP pad. |
| SI2300DS-T1-GE3 | RDS(ON) = 35 mΩ @ 4.5V (higher), SOT-23 package, lower voltage rating (20V). | Limited to low-voltage (<24V), low-power (<3A) applications like load switches or battery protection ICs. | Only viable for cost-sensitive, space-constrained sub-3A loads - not a functional replacement for DMT6013LSS-13 in 48V systems. |
Compared with DMT6013LSS-13, DMT6004LPS-13 offers superior conduction efficiency at higher currents but demands revised thermal layout, while SI2300DS-T1-GE3 lacks both voltage rating and current capability for equivalent power-stage use - making DMT6013LSS-13 the optimal balance of 60V robustness, 4.5V drivability, and SO-8 manufacturability.
Availability
DMT6013LSS-13 is available at Aetrix Electronics and suitable for server VRMs, industrial DC-DC converters, and USB PD adapters requiring stable component supply, consistent parametric performance, and long-term production continuity.
Supply support for DMT6013LSS-13 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design, manufacturing, and sales operations across Asia, Europe, and the Americas.
The DMT6013LSS belongs to Diodes' PowerMOS™ portfolio, engineered specifically for high-efficiency, high-reliability power conversion in computing, industrial, and consumer power supplies - emphasizing low RDS(ON), fast switching, and rugged avalanche performance.
FAQ
What is the maximum safe operating junction temperature for DMT6013LSS-13?
The absolute maximum junction temperature is +150°C, and the device is characterized for continuous operation across -55°C to +150°C. Derating begins above +70°C ambient per the RθJA = 60.4°C/W curve; sustained operation above 135°C TJ requires thermal monitoring or reduced load current.
Does DMT6013LSS-13 support gate drive from a 3.3V microcontroller?
Yes - it guarantees RDS(ON) ≤ 21 mΩ at VGS = 4.5V and supports functional switching down to VGS(th) = 1.0–2.5V. While 3.3V is below nominal 4.5V test condition, typical VGS(th) = 1.6V ensures turn-on; however, RDS(ON) will increase (~35–45 mΩ), limiting usable current to ≤4A for thermal safety.
How is the SO-8 package thermally optimized in DMT6013LSS-13?
The SO-8 uses an exposed drain paddle connected to pins 5–8, delivering RθJC = 25.7°C/W. When soldered to a 1-inch² 2oz copper thermal pad on the PCB, it achieves RθJA = 60.4°C/W - a 30% improvement over standard SO-8 layouts - enabling higher power density without external heatsinks.
Is DMT6013LSS-13 suitable for automotive AEC-Q101 qualification?
No - DMT6013LSS-13 is not AEC-Q101 qualified. It meets industrial temperature range (-55°C to +150°C) and RoHS3 compliance, but lacks the stress testing, lot traceability, and failure analysis required for automotive-grade qualification. For automotive infotainment use, system-level validation is required per customer requirements.
DMT6013LSS-13 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Diodes Incorporated
- Series:
- -
- Package/Case:
- 8-SOIC (0.154", 3.90mm Width)
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 60 V
- Current - Continuous Drain (Id) @ 25°C:
- 10A (Ta)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 14.3mOhm @ 10A, 10V
- Vgs(th) (Max) @ Id:
- 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 15 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 1081 pF @ 30 V
- FET Feature:
- -
- Power Dissipation (Max):
- 1.4W (Ta)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 8-SOP
DMT6013LSS-13 FAQ
1.How can I place an order for DMT6013LSS-13 through Aetrix?
Please submit a Request for Quotation (RFQ) for DMT6013LSS-13 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for DMT6013LSS-13 reliable?
The price and inventory of DMT6013LSS-13 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMT6013LSS-13 is usually 5 days.
3.What payment methods are accepted for DMT6013LSS-13?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMT6013LSS-13 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for DMT6013LSS-13?
DMT6013LSS-13 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your DMT6013LSS-13 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for DMT6013LSS-13?
For technical support, including DMT6013LSS-13 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMT6013LSS-13 requirements.
6.How does Aetrix verify that DMT6013LSS-13 is sourced from the original manufacturer or authorized distributors?
All DMT6013LSS-13 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMT6013LSS-13 meets industry standards.
7.What is the process for return or replacement of DMT6013LSS-13?
All DMT6013LSS-13 units undergo pre-shipment inspection (PSI). If there is an issue with DMT6013LSS-13, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The DMT6013LSS-13 part is unused and in its original packaging.
Return procedure for DMT6013LSS-13:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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