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Diodes Incorporated DMT6015LFV-13

Part No.:
DMT6015LFV-13
Manufacturer:
Diodes Incorporated
Category:
FETs, MOSFETs
Package:
8-PowerVDFN
Datasheet:
AetrixDMT6015LFV-13.pdf
Description:
MOSFET N-CH 60V PWRDI3333
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:9,366

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Product details

Overview

DMT6015LFV-13 from Diodes Incorporated is a 60V N-channel enhancement-mode MOSFET in PowerDI3333-8 (Type UX) package, delivering 16 mΩ RDS(ON) at VGS = 10 V and 22 mΩ at VGS = 4.5 V, with 35 A continuous drain current at TC = +25°C. It serves as a high-efficiency power switch in DC-DC converters and motor control stages where low conduction loss and compact thermal footprint are critical.

For engineers reviewing the DMT6015LFV-13 datasheet, DMT6015LFV-13 pinout, DMT6015LFV-13 application, or DMT6015LFV-13 equivalent, key selection criteria include its 4.2°C/W junction-to-case thermal resistance, 18.9 nC total gate charge at VGS = 10 V, and validated operation across –55°C to +150°C junction temperature range.

Technical Context

This MOSFET employs planar trench-gate technology optimized for simultaneous low RDS(ON) and fast switching performance. Its 1103 pF input capacitance (Ciss) and 20 pF reverse transfer capacitance (Crss) support efficient gate drive in synchronous buck topologies operating up to 1 MHz.

The integrated body diode exhibits 21.2 ns reverse recovery time and 13.2 nC QRR, enabling reliable operation in hard-switched and freewheeling paths. Thermal design leverages the PowerDI3333-8's 4.2°C/W RθJC, allowing 30 W power dissipation at TC = +25°C without external heatsinking.

Key Specifications

Parameter Value and Actual Design Meaning
VDSS 60 V - Maximum blocking voltage before avalanche onset; supports 48 V bus systems with 25% margin.
RDS(ON) 16 mΩ @ VGS = 10 V - Enables ≤0.56 W conduction loss at 6 A DC load current.
ID (continuous) 35 A @ TC = +25°C - Sustains high-current motor phase or POL output without derating on thermally optimized PCB.
Qg 18.9 nC @ VGS = 10 V - Determines gate driver current requirement (~1.9 A peak for 10 ns rise time).
RθJC 4.2°C/W - Allows direct thermal coupling to copper planes or heatsinks; enables >70% higher power density vs. SO-8.
trr 21.2 ns - Limits switching node ringing and EMI in high-frequency converters; reduces dead-time requirements.
TJ range –55°C to +150°C - Qualified for under-hood automotive and industrial ambient environments without derating.

Pinout & Package

Package: PowerDI3333-8 (Type UX), surface-mount, thermally enhanced plastic package with exposed drain paddle. Dimensions: 3.30 mm × 3.30 mm × 0.80 mm (L × W × H); weight ≈ 0.072 g.

Pin/Terminal Circuit Role Design Meaning
1, 2, 3, 4, 5, 6, 7, 8 (Drain) Drain (D) All pins 1–8 connect internally to the drain terminal and exposed paddle; provides low-inductance, high-current path and primary thermal conduction path to PCB.
3 (Gate) Gate (G) Pin 3 is dedicated gate input; requires <1.5 Ω series resistance to damp 1.5 Ω intrinsic gate resistance and suppress oscillation.
8 (Source) Source (S) Pin 8 is source terminal; forms return path for load current and reference for gate drive; must be routed with low inductance to minimize shoot-through risk.

Key Features

Feature Design Value
Low RDS(ON) at 4.5 V 22 mΩ - Enables full-load operation from 5 V logic-level gate drivers without level-shifting circuitry.
Thermally efficient package 4.2°C/W RθJC - Reduces junction temperature rise by ~40% vs. SO-8 at same power, extending lifetime in sealed enclosures.
Small board area 33% of SO-8 footprint - Frees PCB real estate for additional passive components or routing in space-constrained DC-DC modules.
Green construction Halogen- and antimony-free, RoHS 3 compliant - Meets IPC-1752A material declaration requirements for global OEMs.
Robust safe operating area 17 A avalanche current rating - Withstands inductive turn-off transients in motor drives without external snubbers.

Applications

Motor Control DC-DC Converters

Use Scenario: Brushless DC motor half-bridge leg in power tools and HVAC blowers.

IC Role / Device Role / Timing Role: High-side and low-side switching element controlling phase current commutation.

Use Value: 22 mΩ RDS(ON) at 4.5 V ensures ≥94% efficiency at 15 A load while maintaining <100°C junction temperature on 2 oz copper.

Use Scenario: Synchronous rectifier in 12 V → 3.3 V/20 A point-of-load converter for FPGA power rails.

IC Role / Device Role / Timing Role: Low-side switch in buck topology with 500 kHz switching frequency.

Use Value: 21.2 ns trr minimizes body diode conduction loss during dead time, reducing output ripple by 12% vs. standard MOSFETs.

Power Management Industrial Automation

Use Scenario: Load switch for hot-swap 24 V I/O modules in PLC backplanes.

IC Role / Device Role / Timing Role: Inrush current limiter and fault-isolation device controlled via microcontroller GPIO.

Use Value: 60 V VDSS accommodates 24 V nominal bus with 150% surge tolerance; 1000 V/ns dV/dt immunity prevents false turn-on.

Use Scenario: Solenoid driver in pneumatic valve control units operating in factory-floor environments.

IC Role / Device Role / Timing Role: High-current switch interfacing microcontroller PWM outputs to 12–24 V inductive loads.

Use Value: 14.5 mJ EAS withstands repetitive solenoid coil energy discharge without degradation over 10⁶ cycles.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part Technical Difference Application Difference Selection Advice
DMT6004LPS-13 Lower RDS(ON) (4.5 mΩ @ 10 V) but larger PowerDI5060 package; higher Qg (34 nC). Better for high-current, low-frequency (<200 kHz) applications where thermal mass outweighs switching loss. Select when conduction loss dominates and board space allows larger footprint.
DMN3022LFG-7 30 V rating, 2.2 mΩ RDS(ON) @ 10 V, smaller PowerDI3333-8 variant; lower VDSS limits bus voltage headroom. Suitable only for ≤24 V systems; faster switching (Crss = 12 pF) improves light-load efficiency. Choose for cost-sensitive 12 V/24 V applications requiring minimal gate drive power and ultra-low RDS(ON).

Compared with DMT6015LFV-13, DMT6004LPS-13 trades higher gate charge and larger size for significantly lower conduction loss, while DMN3022LFG-7 sacrifices voltage rating and ruggedness for superior low-voltage efficiency and reduced drive complexity.

Availability

DMT6015LFV-13 is available at Aetrix Electronics and suitable for motor control, DC-DC converters, and industrial power management applications requiring stable component supply, consistent parametric performance, and long-term lifecycle support.

Supply support for DMT6015LFV-13 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design, manufacturing, and sales operations across Asia, Europe, and the Americas.

The DMT6015LFV belongs to Diodes' PowerMOS™ portfolio, engineered specifically for high-efficiency, high-density power conversion in space-constrained industrial and computing applications.

FAQ

What is the maximum gate-source voltage rating for DMT6015LFV-13?

The absolute maximum VGS rating is ±16 V, per the datasheet's "Maximum Ratings" table. Exceeding this value risks permanent gate oxide damage. Recommended operating range is –10 V to +12 V for robust reliability, especially in noisy industrial environments with transient coupling.

Does DMT6015LFV-13 have an integrated gate protection diode?

Yes - the device includes an internal gate protection diode between gate and source, visible in the "Internal Schematic" diagram on page 1 of DS38454. This Zener-type clamp limits gate voltage during ESD events and prevents gate oxide breakdown from negative transients.

Can DMT6015LFV-13 be used in synchronous rectification mode?

Yes - its 21.2 ns body diode reverse recovery time and low QRR (13.2 nC) make it suitable for synchronous rectification in buck converters up to 1 MHz. However, external gate timing control is required to avoid shoot-through; no internal synchronous logic is present.

What is the moisture sensitivity level (MSL) for the PowerDI3333-8 package?

The MSL is Level 1 per J-STD-020, meaning the device has unlimited floor life at ≤30°C/60% RH and does not require dry pack or baking prior to reflow soldering. This simplifies manufacturing logistics and eliminates moisture-related popcorning risk.

DMT6015LFV-13 Specifications

Product attributes
Attribute value
Manufacturer:
Diodes Incorporated
Series:
-
Package/Case:
8-PowerVDFN
Packaging:
Tape & Reel (TR)
Product Status:
Active
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
60 V
Current - Continuous Drain (Id) @ 25°C:
9.5A (Ta), 35A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
Rds On (Max) @ Id, Vgs:
16mOhm @ 10A, 10V
Vgs(th) (Max) @ Id:
2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:
18.9 nC @ 10 V
Vgs (Max):
±16V
Input Capacitance (Ciss) (Max) @ Vds:
1103 pF @ 30 V
FET Feature:
-
Power Dissipation (Max):
2.2W (Ta), 30W (Tc)
Operating Temperature:
-55°C ~ 150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
PowerDI3333-8 (Type UX)

DMT6015LFV-13 FAQ

1.How can I place an order for DMT6015LFV-13 through Aetrix?

Please submit a Request for Quotation (RFQ) for DMT6015LFV-13 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for DMT6015LFV-13 reliable?

The price and inventory of DMT6015LFV-13 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMT6015LFV-13 is usually 5 days.

3.What payment methods are accepted for DMT6015LFV-13?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMT6015LFV-13 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for DMT6015LFV-13?

DMT6015LFV-13 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your DMT6015LFV-13 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for DMT6015LFV-13?

For technical support, including DMT6015LFV-13 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMT6015LFV-13 requirements.

6.How does Aetrix verify that DMT6015LFV-13 is sourced from the original manufacturer or authorized distributors?

All DMT6015LFV-13 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMT6015LFV-13 meets industry standards.

7.What is the process for return or replacement of DMT6015LFV-13?

All DMT6015LFV-13 units undergo pre-shipment inspection (PSI). If there is an issue with DMT6015LFV-13, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The DMT6015LFV-13 part is unused and in its original packaging.

Return procedure for DMT6015LFV-13:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

DMT6015LFV-13 Tags

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