Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Diodes Incorporated DMT6015LFV-7

Name: DMT6015LFV-7
Brand: Diodes Incorporated
SKU: DMT6015LFV-7
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

Compare

Part No.:: DMT6015LFV-7

Manufacturer:: Diodes Incorporated

Category:: FETs, MOSFETs

Package:: 8-PowerVDFN

Datasheet:: DMT6015LFV-7.pdf

Description:: MOSFET N-CH 60V PWRDI3333

Quantity:: RFQ Add To RFQ list

Payment:

Shipping:

Inventory:970

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Product details

Overview

DMT6015LFV-7 from Diodes Incorporated is a 60V N-channel enhancement-mode MOSFET in PowerDI3333-8 (Type UX) package, delivering 35A continuous drain current at TC = +25°C, 16mΩ RDS(ON) @ VGS = 10V, and 22mΩ @ VGS = 4.5V. It serves as a high-efficiency power switch in DC-DC converters, motor control stages, and battery-powered power management systems.

For engineers reviewing the DMT6015LFV-7 datasheet, DMT6015LFV-7 pinout, DMT6015LFV-7 application, or DMT6015LFV-7 equivalent, key selection criteria include its low RDS(ON) at 4.5V gate drive, thermally efficient PowerDI3333-8 footprint, SOA robustness up to 75V VDS spike, and body diode recovery performance (tRR = 21.2ns, QRR = 13.2nC).

Technical Context

This MOSFET employs planar trench-gate silicon technology optimized for low conduction loss while maintaining fast switching transitions. Its gate threshold voltage (0.5–2.5V) enables compatibility with 3.3V and 5V logic-level drivers, and its Crss of 20pF supports stable operation in hard-switched topologies.

The device integrates an intrinsic body diode with 2A continuous forward current rating and exhibits controlled reverse recovery behavior-critical for synchronous rectification and freewheeling in buck and half-bridge configurations where shoot-through risk must be minimized.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	60V - Maximum blocking voltage for use in 48V bus and industrial DC-DC stages
R_DS(ON)	16mΩ @ V_GS = 10V - Enables <1W conduction loss at 25A, reducing heatsink requirements
I_D (continuous)	35A @ T_C = +25°C - Supports high-current load switching without derating on thermally enhanced PCBs
Q_g	18.9nC @ V_GS = 10V - Determines gate driver power demand and switching speed in PWM circuits
t_RR	21.2ns - Limits reverse recovery energy loss and EMI generation during diode commutation
R_θJC	4.2°C/W - Enables direct thermal coupling to heatsinks or copper planes for high-power density designs
P_D (T_C)	30W @ T_C = +25°C - Specifies maximum dissipation under case-mounted thermal conditions

Pinout & Package

Package: PowerDI3333-8 (Type UX), surface-mount, thermally enhanced plastic package with exposed drain pad; dimensions 3.30 × 3.30 × 0.80 mm; UL 94V-0 rated; moisture sensitivity level 1.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 3, 4 (Drain)	Power Drain Connection	Four parallel drain terminals tied to internal die drain metallization and exposed thermal pad - primary heat path and high-current return
5 (Source)	Source Reference Node	Low-inductance source connection for gate drive reference and current sensing; shared with pins 6 and 7
6, 7 (Source)	Source Reference Node	Redundant source terminals reduce parasitic inductance and improve current sharing in high-di/dt applications
8 (Gate)	Control Input	Single-point gate terminal with 1.5Ω gate resistance - limits dv/dt-induced turn-on and simplifies driver design

Key Features

Feature	Design Value
Low R_DS(ON) at 4.5V	22mΩ - Enables full-load operation with 3.3V microcontroller GPIO or dedicated low-voltage gate drivers
Thermally optimized footprint	33% board area vs. SO-8 - increases layout flexibility and allows higher power density in space-constrained modules
Body diode Q_RR	13.2nC - Reduces switching loss and voltage overshoot during synchronous rectification and flyback recovery
Lead-free & green construction	<900ppm Br/Cl, <1000ppm Sb - Complies with RoHS 3 and automotive supply chain material declarations
Robust SOA	75V V_DS spike tolerance - Withstands transient overvoltage during inductive load switching without avalanche failure

Applications

Motor Control

DC-DC Converters

Use Scenario: Brushed DC motor H-bridge half-bridge leg in portable power tools and robotics.

IC Role / Device Role / Timing Role: High-side or low-side power switch controlling bidirectional motor current flow with PWM duty cycle modulation.

Use Value: 22mΩ R_DS(ON) at 4.5V ensures >92% efficiency at 15A load, minimizing thermal stress during burst-mode operation.

Use Scenario: Synchronous rectifier in 12V-to-5V/3.3V buck converter for industrial PLC I/O modules.

IC Role / Device Role / Timing Role: Low-side synchronous FET replacing Schottky diode to reduce conduction loss and improve light-load efficiency.

Use Value: 21.2ns t_RR and 13.2nC Q_RR minimize dead-time loss and voltage ringing during body diode conduction phase.

Battery Management

Power Distribution

Use Scenario: Load switch for Li-ion battery pack protection circuitry in medical handheld devices.

IC Role / Device Role / Timing Role: Reverse-polarity and overcurrent protection switch placed between battery and system load.

Use Value: 60V V_DSS headroom accommodates 4S Li-ion stack (16.8V nominal) with surge margin; 16mΩ R_DS(ON) limits voltage drop to <500mV at 30A peak.

Use Scenario: Hot-swap and inrush current limiting in 24V industrial Ethernet switch power rails.

IC Role / Device Role / Timing Role: Controlled power enable switch with external gate resistor for soft-start ramp rate tuning.

Use Value: 35A continuous rating and 4.2°C/W R_θJC support 20A steady-state current with minimal temperature rise on 2oz copper thermal pads.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
DMT6004LPS-13	Lower R_DS(ON) (3.8mΩ @ 10V), but larger PowerDI5060 package; higher Q_g (42nC)	Better for high-frequency, high-efficiency SMPS; less suitable for compact motor drivers due to 5.0×6.0mm footprint	Select when thermal budget allows larger package and gate drive capability supports higher Q_g
SiR626DP-T1-GE3	Same PowerDI3333-8 footprint; 15.5mΩ @ 10V, but only 18mΩ @ 4.5V; higher t_RR (32ns)	Acceptable for 5V-driven converters; not recommended for 3.3V logic-level motor control due to weaker 4.5V R_DS(ON) performance	Choose if cost sensitivity outweighs 4.5V drive margin and body diode speed requirements

Compared with DMT6015LFV-7, DMT6004LPS-13 offers lower conduction loss at the expense of gate drive effort and board area, while SiR626DP-T1-GE3 trades off body diode speed and low-voltage R_DS(ON) for broader vendor availability-making DMT6015LFV-7 optimal for space-constrained, 3.3V/4.5V-driven power stages demanding balanced switching and conduction performance.

Availability

DMT6015LFV-7 is available at Aetrix Electronics and suitable for motor control, DC-DC conversion, and battery management applications requiring stable component supply, consistent parametric performance across production lots, and long-term lifecycle support.

Supply support for DMT6015LFV-7 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, specializing in high-reliability power, signal integrity, and timing solutions for industrial, computing, and consumer markets.

The DMT6015LFV belongs to Diodes' PowerMOS™ portfolio, engineered specifically for high-current, low-voltage power switching in space-constrained applications where thermal efficiency and gate-drive compatibility are critical.

FAQ

What is the maximum safe operating junction temperature for DMT6015LFV-7?

The absolute maximum junction temperature is +150°C per the datasheet's TJ, TSTG specification. Operation above this limit risks permanent degradation of the silicon die and bond wires. Derating curves in Figure 12 confirm that at 35A continuous current, case temperature must remain ≤100°C to maintain reliability-requiring adequate copper area or heatsinking per the 4.2°C/W RθJC value.

Can DMT6015LFV-7 be used as a synchronous rectifier in a 48V input buck converter?

Yes-its 60V VDSS rating provides 12V headroom above 48V nominal input, and its 22mΩ RDS(ON) @ 4.5V ensures low conduction loss even with standard PWM controller gate drive. The 21.2ns body diode tRR and 13.2nC QRR further support clean commutation in continuous conduction mode (CCM) operation up to ~500kHz.

Is the PowerDI3333-8 (Type UX) package compatible with standard SO-8 reflow profiles?

Yes-the PowerDI3333-8 uses matte tin annealed terminals and complies with IPC/JEDEC J-STD-020 moisture sensitivity level 1, allowing standard lead-free reflow profiles (peak 260°C). Its 0.80mm height and thermal pad design require solder paste stencil thickness ≥0.12mm and aperture ratio ≥0.65 to ensure void-free thermal interface to the PCB ground plane.

Does DMT6015LFV-7 include integrated gate protection?

Yes-the device integrates a gate-source Zener diode with ±16V VGSS rating, protecting against ESD and transient overvoltage during handling and circuit operation. This eliminates need for external gate clamping components in most applications, though external RC snubbers may still be required for high-di/dt inductive loads to suppress VDS spikes beyond 75V.

DMT6015LFV-7 Specifications

Product attributes: Attribute value

Manufacturer:: Diodes Incorporated

Series:: -

Package/Case:: 8-PowerVDFN

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 60 V

Current - Continuous Drain (Id) @ 25°C:: 9.5A (Ta), 35A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 16mOhm @ 10A, 10V

Vgs(th) (Max) @ Id:: 2.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 18.9 nC @ 10 V

Vgs (Max):: ±16V

Input Capacitance (Ciss) (Max) @ Vds:: 1103 pF @ 30 V

FET Feature:: -

Power Dissipation (Max):: 2.2W (Ta), 30W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PowerDI3333-8 (Type UX)

DMT6015LFV-7 FAQ

1.How can I place an order for DMT6015LFV-7 through Aetrix?

Please submit a Request for Quotation (RFQ) for DMT6015LFV-7 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for DMT6015LFV-7 reliable?

The price and inventory of DMT6015LFV-7 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMT6015LFV-7 is usually 5 days.

3.What payment methods are accepted for DMT6015LFV-7?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMT6015LFV-7 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for DMT6015LFV-7?

DMT6015LFV-7 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your DMT6015LFV-7 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for DMT6015LFV-7?

For technical support, including DMT6015LFV-7 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMT6015LFV-7 requirements.

6.How does Aetrix verify that DMT6015LFV-7 is sourced from the original manufacturer or authorized distributors?

All DMT6015LFV-7 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMT6015LFV-7 meets industry standards.

7.What is the process for return or replacement of DMT6015LFV-7?

All DMT6015LFV-7 units undergo pre-shipment inspection (PSI). If there is an issue with DMT6015LFV-7, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The DMT6015LFV-7 part is unused and in its original packaging.

Return procedure for DMT6015LFV-7:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

Tech Hub

2026-08-21 What Is an LED Driver? Types, Circuits, Dimming, and Selection

An engineering guide to LED driver operation, constant-current and constant-voltage outputs, linear and switching topologies, dimming, IC selection, calculations, replacement compatibility, and fault c…

2026-08-18 Operational Amplifier (Op Amp): Basics, Configurations, Feedback and Applications

Operational amplifier guide covering op amp basics, feedback, ideal vs real op amps, common configurations, buffer circuits, offset, bias current, gain-bandwidth, slew rate, rail-to-rail limits and sel…

2026-08-14 Jumper Cables: How to Use, Connect and Choose Them Safely

Jumper cables guide covering safe connection order, red and black clamp placement, final ground connection, cable gauge, length, clamp quality, copper vs CCA cables, jump starter comparison and battery…

2026-08-11 LDO Regulator: Dropout Voltage, Noise, PSRR and Power Dissipation

LDO regulator guide covering low dropout voltage, power dissipation, thermal design, PSRR, output noise, capacitor stability, adjustable LDO circuits, LDO vs buck converter and datasheet selection chec…

2026-08-06 Conditional Access Module: CAM, CI/CI+ and DVB Security

Conditional Access Module guide covering CAM meaning, CI/CI+ interface, smart card authorization, DVB security workflow, TV and set-top box compatibility, internal electronics, ESD protection, connecto…

2026-08-03 Electronic Component Obsolescence: EOL Risks, Replacement Options and Last-Time Buy Strategy

Guide to electronic component obsolescence covering EOL risk, PCN/PDN notices, last-time buy planning, replacement options, form-fit-function validation, counterfeit risk and BOM lifecycle management.

2026-07-29 18650 Battery: Voltage, Capacity, Charging and Pack Design

18650 battery guide covering lithium-ion cell basics, 3.6V/3.7V voltage, 4.2V charging, mAh and Wh capacity, protected cells, chargers, BMS, series-parallel packs, holders, welding and sourcing checks.…

2026-07-27 Hall Effect Sensor: Working Principle, Types, Circuits and Applications

Hall effect sensor guide covering working principle, linear and digital sensors, Arduino circuits, current sensing, speed detection, automotive applications, A3144 examples, signal filtering and datash…

2026-07-20 Product Change Notification (PCN) in Electronic Components: Meaning and Supply Chain Response

Product Change Notification guide for electronic components, covering PCN meaning, PCN vs PDN/EOL, common change types, risk levels, form-fit-function review, engineering validation, BOM control, LTB/L…

2026-07-19 Blend Door Actuator: Symptoms, Location, Reset and Replacement Guide

A practical guide to blend door actuators, covering HVAC function, symptoms, location, AC and heater issues, reset and calibration, replacement cost, electrical diagnosis, compatibility checks, and rep…