Diodes Incorporated DMT6015LFVW-7
- Part No.:
- DMT6015LFVW-7
- Manufacturer:
- Diodes Incorporated
- Category:
- FETs, MOSFETs
- Package:
- 8-PowerVDFN
- Datasheet:
-
DMT6015LFVW-7.pdf
- Description:
- MOSFET BVDSS: 41V~60V POWERDI333
- Quantity:
- Payment:

- Shipping:

Inventory:4,753
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Product details
Overview
DMT6015LFVW-7 from Diodes Incorporated is a 60V N-channel enhancement-mode MOSFET in PowerDI3333-8 (SWP) package, rated for 31.8A continuous drain current at TC = +25°C, with RDS(ON) of 16mΩ @ VGS = 10V and 22mΩ @ VGS = 4.5V. It serves as a high-efficiency synchronous rectifier or power switch in DC-DC converters and backlighting circuits.
For engineers reviewing the DMT6015LFVW-7 datasheet, DMT6015LFVW-7 pinout, DMT6015LFVW-7 application, or DMT6015LFVW-7 equivalent, key selection criteria include its wettable flank package for automated optical inspection, 100% production-tested UIS robustness, and thermally efficient junction-to-case thermal resistance of 4.4°C/W.
Technical Context
This MOSFET employs a trench-gate process optimized for low RDS(ON) while maintaining fast switching performance, evidenced by 15.7nC total gate charge at VGS = 10V and 8.6nC at VGS = 4.5V. Its body diode exhibits 26.7ns reverse recovery time and 16.2nC QRR under IF = 10A, di/dt = 100A/μs conditions.
The device operates across -55°C to +150°C junction temperature range and supports ±16V gate-source voltage. Its safe operating area (SOA) is defined up to 127A pulsed drain current (10μs, 1% duty), with avalanche energy rating of 21.4mJ at L = 0.1mH.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 60V - Maximum blocking voltage before breakdown; defines use in ≤48V nominal bus systems. |
| RDS(ON) | 16mΩ @ VGS = 10V - Enables <1.6W conduction loss at 10A, critical for high-current power stages. |
| ID (TC = +25°C) | 31.8A - Continuous current capability when mounted on heatsink; sets PCB copper and thermal pad design requirements. |
| Qg | 15.7nC @ VGS = 10V - Determines gate driver strength needed for <20ns turn-on delay and low switching loss. |
| RθJC | 4.4°C/W - Junction-to-case thermal resistance enables direct thermal coupling to PCB copper or heatsink for high-power density layouts. |
| trr | 26.7ns - Fast body diode recovery reduces cross-conduction loss in synchronous buck topologies. |
| EAS | 21.4mJ - Avalanche energy rating ensures reliability during inductive load switching transients without external snubbers. |
Pinout & Package
Package: PowerDI3333-8 (SWP), surface-mount, thermally enhanced with exposed drain pad and wettable flank terminals for solder joint inspection.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (G) | Gate | Control terminal; requires ≥10V drive for full enhancement; gate protection diode integrated. |
| 2–4, 6–9 (D) | Drain | High-side or low-side power path connection; all tied to exposed thermal pad for heat dissipation. |
| 5 (S) | Source | Reference node for gate drive; connects to power ground or switching node depending on topology. |
Key Features
| Feature | Design Value |
|---|---|
| 100% UIS tested in production | Guarantees robustness against unclamped inductive switching events without derating. |
| Wettable flank terminals | Enables automated optical inspection (AOI) of solder fillets on all four side terminals. |
| PowerDI3333-8 thermal efficiency | 4.4°C/W RθJC allows >28W power dissipation when mounted on copper plane, supporting compact DC-DC designs. |
| Lead-free & halogen-free | Complies with RoHS 3 and "Green" definition (<900ppm Br/Cl, <1000ppm Sb), suitable for automotive and industrial end markets. |
Applications
| LED Backlight Driver | Point-of-Load DC-DC Converter |
|---|---|
Use Scenario: Driving high-brightness LED strings in LCD TV or monitor backlight units using boost or SEPIC topology. IC Role / Device Role / Timing Role: High-side synchronous rectifier or PWM-controlled current sink switch operating at 100–500kHz. Use Value: Low RDS(ON) minimizes conduction loss in high-current paths; fast trr prevents shoot-through in high-frequency switching. | Use Scenario: Secondary-side synchronous rectification in isolated 12V-to-1.2V/30A buck-derived converters for server CPU VRMs. IC Role / Device Role / Timing Role: Low-side power switch in synchronous buck stage, driven by dedicated gate controller. Use Value: 16mΩ RDS(ON) at 10V gate drive reduces I²R loss below 1.6W; wettable flanks ensure reliable solder joint integrity at high thermal cycling stress. |
| Automotive Body Control Module | Industrial Motor Drive H-Bridge |
Use Scenario: Load switching for solenoids, relays, and LED lighting in AEC-Q101-capable BCMs. IC Role / Device Role / Timing Role: Protected high-side switch with integrated gate protection diode and avalanche ruggedness. Use Value: 21.4mJ EAS withstands inductive kickback from 12V automotive loads; -55°C to +150°C rating meets extended temperature requirements. | Use Scenario: Half-bridge leg in 24V/48V BLDC motor drives for HVAC fans or pumps. IC Role / Device Role / Timing Role: Low-side switch in complementary pair, requiring matched RDS(ON) and fast switching to minimize dead-time losses. Use Value: 8.6nC Qg at 4.5V enables efficient 3.3V logic-level drive; tight RDS(ON) tolerance (11.3–16mΩ typ–max) ensures current sharing balance. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| DMT6009LSD-13 | RDS(ON) = 9.5mΩ @ 10V, higher ID (38A), same PowerDI3333-8 package | Better conduction efficiency at high current; slightly higher Qg (18.5nC) | Select when lower RDS(ON) is prioritized over gate drive simplicity. |
| SiR870DP-T1-GE3 | 60V, 12.5mΩ @ 10V, PowerPAK® SO-8 package, no wettable flanks | Higher thermal resistance (RθJA = 50°C/W vs. 44.2°C/W), different footprint | Choose only if existing SO-8 layout prohibits PowerDI3333-8 adoption. |
Compared with DMT6015LFVW-7, DMT6009LSD-13 delivers lower conduction loss but demands stronger gate drive, while SiR870DP-T1-GE3 offers marginally better RDS(ON) but sacrifices AOI capability and thermal performance due to non-wettable flanks and inferior RθJC.
Availability
DMT6015LFVW-7 is available at Aetrix Electronics and suitable for LED backlighting, point-of-load DC-DC conversion, and automotive body control modules requiring stable component supply, long-term lifecycle support, and traceable sourcing.
Supply support for DMT6015LFVW-7 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design, manufacturing, and sales operations across Asia, Europe, and the Americas.
This MOSFET belongs to Diodes' PowerMOS™ portfolio, engineered specifically for high-efficiency, high-density power conversion in consumer, industrial, and automotive applications where thermal performance and production test rigor are critical.
FAQ
What is the maximum allowable gate-source voltage for DMT6015LFVW-7?
The absolute maximum gate-source voltage is ±16V. Exceeding this rating risks permanent gate oxide damage. For reliable operation, gate drive should be limited to 10V–12V for full enhancement, with transient spikes clamped by the integrated gate protection diode shown in the equivalent circuit diagram.
Does DMT6015LFVW-7 support 3.3V logic-level gate drive?
No - at VGS = 4.5V, RDS(ON) rises to 22mΩ (vs. 16mΩ at 10V), increasing conduction loss by ~38%. Gate threshold voltage ranges from 1.2V to 2.5V, but full enhancement requires ≥4.5V; 3.3V drive yields significantly degraded performance and is not recommended for continuous operation.
How is thermal performance validated for the PowerDI3333-8 package?
Thermal resistance values are measured per JEDEC JESD51-14 (transient dual-interface) and JESD51-1 (steady-state). RθJC = 4.4°C/W is derived from junction-to-solder-point measurement on the exposed drain pad, verified using calibrated thermocouples and infrared imaging during standardized power cycling tests.
Is DMT6015LFVW-7 qualified for automotive applications?
While not pre-qualified to AEC-Q101, Diodes Incorporated states that automotive-grade versions with PPAP capability and IATF 16949 manufacturing are available upon request. Standard DMT6015LFVW-7 meets industrial temperature range (-55°C to +150°C) and RoHS/Green specifications required for many automotive subsystems.
DMT6015LFVW-7 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Diodes Incorporated
- Series:
- -
- Package/Case:
- 8-PowerVDFN
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 60 V
- Current - Continuous Drain (Id) @ 25°C:
- 10A (Ta), 31.8A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 16mOhm @ 10A, 10V
- Vgs(th) (Max) @ Id:
- 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 15.7 nC @ 10 V
- Vgs (Max):
- ±16V
- Input Capacitance (Ciss) (Max) @ Vds:
- 808 pF @ 30 V
- FET Feature:
- -
- Power Dissipation (Max):
- 2.8W (Ta), 28.4W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount, Wettable Flank
- Supplier Device Package:
- PowerDI3333-8 (SWP) Type UX
DMT6015LFVW-7 FAQ
1.How can I place an order for DMT6015LFVW-7 through Aetrix?
Please submit a Request for Quotation (RFQ) for DMT6015LFVW-7 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for DMT6015LFVW-7 reliable?
The price and inventory of DMT6015LFVW-7 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMT6015LFVW-7 is usually 5 days.
3.What payment methods are accepted for DMT6015LFVW-7?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMT6015LFVW-7 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for DMT6015LFVW-7?
DMT6015LFVW-7 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your DMT6015LFVW-7 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for DMT6015LFVW-7?
For technical support, including DMT6015LFVW-7 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMT6015LFVW-7 requirements.
6.How does Aetrix verify that DMT6015LFVW-7 is sourced from the original manufacturer or authorized distributors?
All DMT6015LFVW-7 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMT6015LFVW-7 meets industry standards.
7.What is the process for return or replacement of DMT6015LFVW-7?
All DMT6015LFVW-7 units undergo pre-shipment inspection (PSI). If there is an issue with DMT6015LFVW-7, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The DMT6015LFVW-7 part is unused and in its original packaging.
Return procedure for DMT6015LFVW-7:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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