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Diodes Incorporated DMT6015LPDW-13
- Part No.:
- DMT6015LPDW-13
- Manufacturer:
- Diodes Incorporated
- Category:
- FET, MOSFET Arrays
- Package:
- 8-PowerTDFN
- Datasheet:
-
DMT6015LPDW-13.pdf
- Description:
- MOSFET 2N-CH 60V 9.4A PWRDI50
- Quantity:
- Payment:
- Shipping:
Inventory:9,893
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Product details
Overview
DMT6015LPDW-13 from Diodes Incorporated is a dual N-channel enhancement-mode MOSFET in PowerDI5060-8 package, rated for 60V VDSS, 18 mΩ RDS(ON) @ 10V VGS, and 17.1A ID at TC = +25°C. It delivers low conduction loss and fast switching for high-efficiency DC-DC converters and wireless charging power stages.
For engineers reviewing the DMT6015LPDW-13 datasheet, DMT6015LPDW-13 pinout, DMT6015LPDW-13 application, or DMT6015LPDW-13 equivalent, key selection criteria include dual-channel RDS(ON) matching at 4.5V/10V drive, wettable flank inspection capability, 100% production UIS testing, and thermal performance in thermally constrained layouts.
Technical Context
This dual N-channel MOSFET integrates two matched silicon die in a single exposed-drain PowerDI5060-8 package with thermally optimized copper leadframe. Its gate threshold voltage (1.2–2.5V) enables robust 3.3V and 5V logic-level drive, while low Ciss (808 pF) and Qg (15.7 nC @ 10V) support high-frequency synchronous rectification.
The device features integrated ESD protection on both gates and body diodes with soft recovery (tRR = 26.7 ns, QRR = 16.2 nC), enabling reliable operation in hard-switched topologies. Its RθJC of 15.8°C/W and 100% UIS-tested ruggedness ensure stable performance under repetitive inductive stress in automotive and industrial power supplies.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 60 V - Supports input rails up to 48V nominal systems with margin for transients. |
| RDS(ON) @ 10V | 13.7–18 mΩ - Enables ≤1.8W conduction loss per channel at 10A, critical for thermal budget in compact converters. |
| RDS(ON) @ 4.5V | 18.3–24.5 mΩ - Ensures usable on-resistance with 3.3V microcontroller gate drive without external level shifters. |
| ID (TC = 25°C) | 17.1 A - Sustains continuous current in high-density power stages when mounted on 2oz FR-4 with thermal pad. |
| EAS | 21.4 mJ - Confirmed avalanche energy rating allows safe operation during inductive turn-off without snubbers. |
| Ciss | 808 pF - Low input capacitance reduces gate drive power and improves switching speed in >500 kHz designs. |
| tRR | 26.7 ns - Fast body diode recovery minimizes shoot-through risk and reverse recovery loss in synchronous buck stages. |
Pinout & Package
Package: PowerDI5060-8/SWP (Type UXD), thermally enhanced surface-mount package with exposed drain paddle for low RθJC (15.8°C/W) and wettable flanks for automated optical inspection.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| S1 | Source of Channel 1 | Low-side return path for first MOSFET; tied to PCB ground plane via thermal pad. |
| G1 | Gate of Channel 1 | Control input for first channel; requires <16V max VGS; ESD-protected. |
| D1 | Drain of Channel 1 | High-side connection point; electrically and thermally connected to exposed paddle. |
| D2 | Drain of Channel 2 | High-side connection for second channel; shares thermal pad with D1 for dual-channel heat spreading. |
| G2 | Gate of Channel 2 | Independent control input; matched threshold and drive characteristics to G1. |
| S2 | Source of Channel 2 | Second low-side return; isolated from S1 to enable independent channel configuration (e.g., half-bridge). |
Key Features
| Feature | Design Value |
|---|---|
| 100% UIS tested in production | Guarantees minimum 20.7A avalanche current and 21.4mJ energy handling per channel without derating. |
| Wettable flank terminals | Enables automated optical inspection (AOI) of solder fillets on all eight side pins, improving manufacturing yield. |
| Thermally efficient PowerDI5060-8 | Exposes drain metal on bottom face, achieving 7.9W power dissipation at TC = 25°C - 3.3× higher than SO-8 equivalents. |
| Low Qgd/Qgs ratio | 3.4nC / 2.9nC = 1.17 - Reduces Miller effect, enabling stable high-speed switching with minimal gate oscillation. |
| ESD-protected gate | HBM rating ≥2kV - Eliminates need for external gate protection in standard assembly environments. |
Applications
| Wireless Charging Transmitter | USB PD 3.0 Buck-Boost Converter |
|---|---|
|
Use Scenario: High-frequency (100–300 kHz) resonant inverter stage driving Qi-compliant transmitter coils. IC Role / Device Role / Timing Role: Dual N-channel switch implementing half-bridge topology; one channel drives high-side, the other low-side with dead-time control. Use Value: Matched RDS(ON) and fast tF (8.9 ns) minimize conduction and switching losses, sustaining >92% efficiency at 20W output. |
Use Scenario: Bidirectional 20–100W USB Power Delivery buck-boost power stage in portable chargers and docking stations. IC Role / Device Role / Timing Role: Synchronous rectifier pair in four-switch buck-boost; each channel handles forward and reverse conduction paths. Use Value: Low 24.5 mΩ RDS(ON) @ 4.5V enables direct MCU drive, eliminating gate drivers and reducing BOM count by two ICs. |
| Industrial 24V DC-DC Point-of-Load | Automotive LED Driver (Front Lighting) |
|
Use Scenario: 24V-to-5V/3.3V step-down converter for PLC I/O modules operating in -40°C to +85°C ambient. IC Role / Device Role / Timing Role: High-side switch in active clamp forward or synchronous buck; leverages rugged UIS rating for transient immunity. Use Value: -55°C to +150°C operating range and 100% UIS screening ensure reliability in unregulated industrial bus environments. |
Use Scenario: PWM-controlled high-brightness LED string driver in adaptive front lighting systems (AFS). IC Role / Device Role / Timing Role: Low-side current sink switch controlling LED current with 100kHz+ PWM dimming. Use Value: Fast tR (2.7 ns) and low Qg allow precise current regulation at high PWM frequencies, eliminating visible flicker. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar dual N-channel MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| DMN6015LSD-13 | Same die, SO-8 package; RθJA = 62°C/W vs. 52.1°C/W; no wettable flanks. | Limited to lower-power (<10W) or forced-air-cooled designs; AOI not supported. | Select when legacy SO-8 footprint compatibility is required and thermal headroom exists. |
| SI6926ADQ-T1-GE3 | 60V dual N-channel in PowerPAK® SO-8; RDS(ON) = 20 mΩ @ 10V; no production UIS test data published. | Higher RDS(ON) increases conduction loss by ~11% at 10A; avalanche ruggedness not guaranteed per lot. | Prefer only where Diodes' UIS assurance is non-critical and SO-8 thermal performance suffices. |
Compared with DMN6015LSD-13 and SI6926ADQ-T1-GE3, DMT6015LPDW-13 provides superior thermal performance (15.8°C/W RθJC), production-validated avalanche robustness, and AOI-ready wettable flanks - making it optimal for space-constrained, high-reliability power stages.
Availability
DMT6015LPDW-13 is available at Aetrix Electronics and suitable for wireless charging transmitters, USB PD buck-boost converters, and industrial 24V point-of-load regulators requiring stable component supply across extended temperature ranges and long production lifecycles.
Supply support for DMT6015LPDW-13 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, specializing in high-performance power management, signal integrity, and protection solutions since 1964.
This device belongs to Diodes' PowerMOS™ portfolio, engineered specifically for high-efficiency, high-density DC-DC conversion in consumer, industrial, and automotive applications where thermal performance and ruggedness are critical.
FAQ
What is the maximum continuous drain current per channel at TA = +70°C?
The DMT6015LPDW-13 supports 7.5A continuous drain current per channel at ambient temperature +70°C with standard FR-4 PCB layout (2oz copper, 1-inch² thermal pad). This rating assumes no forced airflow and accounts for RθJA = 52.1°C/W and junction temperature limit of +150°C.
Does this MOSFET require external gate resistors for stability in 500 kHz switching?
Yes - a 5–10Ω gate resistor is recommended to dampen ringing caused by parasitic inductance and the device's 1.4Ω intrinsic gate resistance. The low Crss (30 pF) and fast tD(OFF) (17.4 ns) make it susceptible to oscillation without proper gate loop control in high-dV/dt environments.
Can the two channels be used independently in different circuits on the same board?
Yes - S1 and S2 are electrically isolated source terminals, and G1/G2 are fully independent gates. The shared drain paddle (D1/D2) must be routed to the same net if used in parallel; otherwise, separate drain routing is required to avoid cross-conduction or thermal coupling in independent applications.
Is the PowerDI5060-8 package compatible with standard reflow profiles for lead-free soldering?
Yes - the device is qualified for JEDEC J-STD-020 Level 1 moisture sensitivity and supports peak reflow temperatures up to 260°C. Its matte tin annealed finish ensures reliable wetting, and the package's 0.125mm nominal stencil thickness aligns with IPC-7525 guidelines for fine-pitch SMT assembly.
DMT6015LPDW-13 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Diodes Incorporated
- Series:
- -
- Package/Case:
- 8-PowerTDFN
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Technology:
- MOSFET (Metal Oxide)
- Configuration:
- 2 N-Channel (Dual)
- FET Feature:
- -
- Drain to Source Voltage (Vdss):
- 60V
- Current - Continuous Drain (Id) @ 25°C:
- 9.4A (Ta), 17.1A (Tc)
- Rds On (Max) @ Id, Vgs:
- 18mOhm @ 10A, 10V
- Vgs(th) (Max) @ Id:
- 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 15.7nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds:
- 808pF @ 30V
- Power - Max:
- 2.4W (Ta), 7.9W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- PowerDI5060-8 (Type UXD)
DMT6015LPDW-13 FAQ
1.How can I place an order for DMT6015LPDW-13 through Aetrix?
Please submit a Request for Quotation (RFQ) for DMT6015LPDW-13 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for DMT6015LPDW-13 reliable?
The price and inventory of DMT6015LPDW-13 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMT6015LPDW-13 is usually 5 days.
3.What payment methods are accepted for DMT6015LPDW-13?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMT6015LPDW-13 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for DMT6015LPDW-13?
DMT6015LPDW-13 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your DMT6015LPDW-13 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for DMT6015LPDW-13?
For technical support, including DMT6015LPDW-13 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMT6015LPDW-13 requirements.
6.How does Aetrix verify that DMT6015LPDW-13 is sourced from the original manufacturer or authorized distributors?
All DMT6015LPDW-13 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMT6015LPDW-13 meets industry standards.
7.What is the process for return or replacement of DMT6015LPDW-13?
All DMT6015LPDW-13 units undergo pre-shipment inspection (PSI). If there is an issue with DMT6015LPDW-13, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The DMT6015LPDW-13 part is unused and in its original packaging.
Return procedure for DMT6015LPDW-13:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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