Diodes Incorporated DMT6015LPS-13
- Part No.:
- DMT6015LPS-13
- Manufacturer:
- Diodes Incorporated
- Category:
- FETs, MOSFETs
- Package:
- 8-PowerTDFN
- Datasheet:
-
DMT6015LPS-13.pdf
- Description:
- MOSFET N-CH 60V PWRDI5060
- Quantity:
- Payment:

- Shipping:

Inventory:9,988
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Product details
Overview
DMT6015LPS-13 from Diodes Incorporated is a 60V N-channel enhancement-mode MOSFET in PowerDI5060-8 package, rated for 31A continuous drain current at TC = +25°C, with RDS(ON) = 16 mΩ @ VGS = 10V and 24 mΩ @ VGS = 4.5V. It integrates gate protection diode and ESD-protected gate, optimized for notebook battery power management and high-efficiency load switching.
For engineers reviewing the DMT6015LPS-13 datasheet, DMT6015LPS-13 pinout, DMT6015LPS-13 application, or DMT6015LPS-13 equivalent, key selection criteria include low RDS(ON) at 4.5V drive, thermally efficient PowerDI5060-8 thermal resistance (RθJC = 4.4°C/W), fast switching (tF = 8.6 ns), and AEC-Q101 readiness for automotive-grade power management designs.
Technical Context
This MOSFET employs trench-gate silicon process to achieve low on-resistance while maintaining robust avalanche capability (EAS = 5 mJ) and fast dynamic performance. Its gate threshold voltage (VGS(TH) = 0.5–2.5 V) enables reliable turn-on with 3.3V/5V logic-level drive, and integrated body diode supports synchronous rectification in DC-DC converters.
The PowerDI5060-8 package delivers 2.7 W power dissipation under enhanced PCB layout (2 oz copper, thermal bias), with junction-to-case thermal resistance of 4.4°C/W - enabling compact, high-current load switch designs without external heatsinking in thin-profile applications.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 60 V - Supports input rails up to 48 V nominal systems with margin for transients. |
| RDS(ON) @ 10 V | 16 mΩ - Enables ≤0.5 W conduction loss at 20 A, critical for high-current load switches. |
| RDS(ON) @ 4.5 V | 24 mΩ - Ensures full enhancement with standard 3.3 V GPIO or PMIC output drivers. |
| Qg @ 10 V | 18.9 nC - Low gate charge reduces driver power and enables >1 MHz switching in DC-DC stages. |
| tF | 8.6 ns - Fast fall time minimizes switching overlap losses in synchronous buck topologies. |
| RθJC | 4.4°C/W - Allows direct thermal coupling to PCB copper pour for passive cooling in space-constrained modules. |
| ID (TC = 25°C) | 31 A - Sustains high pulsed loads in motor gate drivers and battery protection circuits. |
Pinout & Package
Package: PowerDI5060-8 - thermally enhanced 8-pin surface-mount package with exposed drain paddle for low RθJC; height <1.1 mm for ultra-thin portable electronics.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Pin 1–4, 6–8 (Drain) | Main current path (Drain) | Parallel drain terminals reduce current density and package inductance; connected to internal die drain and exposed paddle. |
| Pin 5 (Gate) | Control terminal | ESD-protected gate input; requires <1.5 Ω series resistance for optimal ringing suppression in high-dI/dt switching. |
| Pin 7 (Source) | Reference node | Low-inductance source connection; used as return path for gate drive and load current sensing in high-side configurations. |
Key Features
| Feature | Design Value |
|---|---|
| Thermally efficient package | PowerDI5060-8 delivers RθJC = 4.4°C/W - enables 2.7 W continuous operation without heatsink on 2 oz copper board. |
| Logic-level gate drive | VGS(TH) range (0.5–2.5 V) ensures full enhancement at 3.3 V, eliminating need for level-shifting in MCU-controlled load switches. |
| Integrated gate protection diode | Internal Zener clamps gate-source voltage to ±16 V - prevents ESD damage during handling and board assembly. |
| Low input capacitance | Ciss = 1103 pF at VDS = 30 V - reduces gate drive power and improves efficiency in high-frequency DC-DC converters. |
| Halogen- and antimony-free | <900 ppm Br, <900 ppm Cl, <1000 ppm Sb - meets IPC-1752A Class 3 material declarations for green electronics compliance. |
Applications
| Notebook Battery Protection | USB-C PD Load Switch |
|---|---|
|
Use Scenario: Isolating main battery from system rail during deep sleep or fault conditions in ultrabooks. IC Role / Device Role / Timing Role: High-side load switch controlling 20 V/15 A battery path with fast turn-off (<10 ns fall time) to prevent fault propagation. Use Value: 24 mΩ RDS(ON) at 4.5 V drive enables direct control from EC (Embedded Controller) GPIO, eliminating auxiliary level shifters. |
Use Scenario: Enabling/disabling 20 V/5 A USB-C Power Delivery output in docking stations. IC Role / Device Role / Timing Role: Low-loss power path switch with integrated body diode supporting reverse current blocking during hot-plug events. Use Value: 16 mΩ RDS(ON) limits conduction loss to <1.6 W at full load, reducing thermal stress in sealed enclosures. |
| BLDC Motor Gate Driver | Industrial DC-DC Converter |
|
Use Scenario: Half-bridge high-side switch in 24 V brushless DC motor controllers for HVAC blowers. IC Role / Device Role / Timing Role: Fast-switching N-channel MOSFET driven by bootstrap gate driver; tF = 8.6 ns minimizes shoot-through risk. Use Value: Avalanche energy rating (EAS = 5 mJ) sustains inductive kickback during PWM dead-time without snubbers. |
Use Scenario: Synchronous rectifier in 48 V → 12 V isolated DC-DC module for industrial PLCs. IC Role / Device Role / Timing Role: Secondary-side power switch operating at 300 kHz with Qgd/Qgs ratio of 0.93 for clean zero-voltage switching transition. Use Value: Coss = 251 pF and Crss = 19.7 pF enable tight control of Miller plateau timing in high-efficiency LLC resonant designs. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| DMT6004LPS-13 | RDS(ON) = 4.2 mΩ @ 10 V (lower), but ID = 50 A and larger PowerDI5060-8 footprint identical; higher gate charge (Qg = 32 nC). | Better for high-current (>30 A), lower-frequency (<500 kHz) motor drives where conduction loss dominates. | Select when thermal budget allows higher Qg and RDS(ON) reduction justifies increased gate drive power. |
| DMN3022LSD-13 | 30 V rating, RDS(ON) = 22 mΩ @ 4.5 V, SO-8 package (higher RθJA = 62°C/W), no integrated gate protection diode. | Suitable for 12 V automotive body electronics where voltage margin is sufficient and cost sensitivity is high. | Choose only for non-critical 30 V systems where PCB area is constrained and gate protection is externally implemented. |
Compared with DMT6015LPS-13, DMT6004LPS-13 trades higher switching loss for lower conduction loss in high-current DC loads, while DMN3022LSD-13 sacrifices voltage rating and thermal performance for legacy SO-8 compatibility and lower unit cost in 12 V applications.
Availability
DMT6015LPS-13 is available at Aetrix Electronics and suitable for notebook battery management, USB-C PD load switching, BLDC motor control, and industrial DC-DC converter designs requiring stable component supply and long-term lifecycle support.
Supply support for DMT6015LPS-13 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, specializing in high-performance power management, signal integrity, and protection solutions for computing, industrial, and automotive markets.
The DMT6015LPS belongs to Diodes' PowerMOS™ portfolio, engineered specifically for high-efficiency, low-profile load switching and motor control applications where thermal performance and logic-level drive are essential.
FAQ
What is the maximum safe operating temperature for DMT6015LPS-13?
The device has an operating junction temperature range of –55°C to +150°C. Under continuous DC operation on a 2 oz copper FR-4 board with thermal bias, it achieves 2.7 W power dissipation before reaching TJ = 150°C. Derating is required above +70°C ambient per the RθJA = 46°C/W curve in the datasheet.
Does DMT6015LPS-13 require an external gate resistor?
Yes - a 1–5 Ω series gate resistor is recommended to dampen ringing caused by low gate resistance (RG = 1.5 Ω) and parasitic inductance in high-dI/dt layouts. This prevents false turn-on and ensures clean switching transitions, especially in motor drive half-bridges.
Can DMT6015LPS-13 be used in automotive applications?
It is AEC-Q101 qualified when ordered with appropriate change control and PPAP documentation. The device meets automotive reliability requirements including HBM ESD ≥2 kV and operates across –40°C to +125°C ambient, but final qualification must be confirmed with Diodes Incorporated for specific part lot traceability.
How does the integrated gate protection diode affect circuit design?
The internal Zener diode clamps VGS to ±16 V, eliminating need for external TVS devices in most board-level ESD scenarios. However, designers must still observe gate voltage limits during transient events and avoid exceeding ±16 V in any condition, as the diode is not rated for sustained overvoltage.
DMT6015LPS-13 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Diodes Incorporated
- Series:
- -
- Package/Case:
- 8-PowerTDFN
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 60 V
- Current - Continuous Drain (Id) @ 25°C:
- 10.6A (Ta), 31A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 16mOhm @ 10A, 10V
- Vgs(th) (Max) @ Id:
- 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 18.9 nC @ 10 V
- Vgs (Max):
- ±16V
- Input Capacitance (Ciss) (Max) @ Vds:
- 1103 pF @ 30 V
- FET Feature:
- -
- Power Dissipation (Max):
- 1.16W (Ta)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- PowerDI5060-8
DMT6015LPS-13 FAQ
1.How can I place an order for DMT6015LPS-13 through Aetrix?
Please submit a Request for Quotation (RFQ) for DMT6015LPS-13 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for DMT6015LPS-13 reliable?
The price and inventory of DMT6015LPS-13 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMT6015LPS-13 is usually 5 days.
3.What payment methods are accepted for DMT6015LPS-13?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMT6015LPS-13 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for DMT6015LPS-13?
DMT6015LPS-13 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your DMT6015LPS-13 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for DMT6015LPS-13?
For technical support, including DMT6015LPS-13 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMT6015LPS-13 requirements.
6.How does Aetrix verify that DMT6015LPS-13 is sourced from the original manufacturer or authorized distributors?
All DMT6015LPS-13 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMT6015LPS-13 meets industry standards.
7.What is the process for return or replacement of DMT6015LPS-13?
All DMT6015LPS-13 units undergo pre-shipment inspection (PSI). If there is an issue with DMT6015LPS-13, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The DMT6015LPS-13 part is unused and in its original packaging.
Return procedure for DMT6015LPS-13:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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