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Diodes Incorporated DMT6016LFDF-13
- Part No.:
- DMT6016LFDF-13
- Manufacturer:
- Diodes Incorporated
- Category:
- FETs, MOSFETs
- Package:
- 6-UDFN Exposed Pad
- Datasheet:
-
DMT6016LFDF-13.pdf
- Description:
- MOSFET N-CH 60V 8.9A 6UDFN
- Quantity:
- Payment:
- Shipping:
Inventory:2,240
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Product details
Overview
DMT6016LFDF from Diodes Incorporated is a 60V N-channel enhancement-mode MOSFET in U-DFN2020-6 (Type F) package, optimized for low RDS(ON) and fast switching in compact power switches. It delivers 8.9A continuous drain current at VGS = 10V, 16mΩ on-resistance, and supports 100% production-tested UIS capability - deployed in notebook PC load switches and AC/DC adapter secondary-side synchronous rectification.
For engineers reviewing the DMT6016LFDF datasheet, DMT6016LFDF pinout, DMT6016LFDF application, or DMT6016LFDF equivalent, key selection criteria include its 16mΩ @ 10V RDS(ON), 0.6mm profile, 4mm² PCB footprint, 15.3A avalanche current rating, and compliance with AEC-Q101 requirements when qualified per customer request.
Technical Context
This MOSFET employs a trench-gate process to achieve low conduction loss while maintaining controlled gate charge (Qg = 17nC @ 10V) and fast switching (tr = 5.2ns, tf = 6.8ns). Its body diode exhibits 22ns reverse-recovery time and 11.1nC QRR, enabling efficient operation in high-frequency DC-DC converters.
The device operates across –55°C to +150°C junction temperature range, with thermal resistance RθJA = 66°C/W (on 2oz FR-4 with recommended pad layout) and RθJC = 14.7°C/W. Gate threshold voltage is tightly specified (1.0–3.0V), ensuring stable turn-on behavior under varying bias conditions.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 60V - Withstands up to 60V drain-source blocking voltage without breakdown. |
| RDS(ON) | 16mΩ @ VGS = 10V, ID = 10A - Enables <0.8W conduction loss at 8.9A, critical for thermally constrained PCBs. |
| ID (Continuous) | 8.9A @ TA = +25°C - Supports high-current load switching in space-limited adapters and notebooks. |
| Qg | 17nC @ VGS = 10V - Low gate charge reduces driver power and enables >1MHz switching in synchronous buck stages. |
| EAS | 11.7mJ - Confirmed unclamped inductive switching energy rating ensures robustness against inductive transients. |
| TJ Range | –55°C to +150°C - Validated operation across automotive under-hood and industrial ambient extremes. |
| Ciss | 864pF @ VDS = 30V - Input capacitance directly impacts gate drive loop stability and EMI filter design. |
Pinout & Package
Package: U-DFN2020-6 (Type F), 2.0mm × 2.0mm × 0.6mm, bottom-exposed thermal pad, NiPdAu-plated terminals, moisture sensitivity level 1.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (Source) | Source terminal (S) | Primary current return path; connected to PCB ground plane for thermal and electrical performance. |
| 2 (Gate) | Control input (G) | High-impedance MOSFET gate requiring <100nA leakage control; sensitive to ESD and layout parasitics. |
| 3 (Drain) | Power output (D) | Main high-side or low-side switching node; carries full load current and must be routed with low-inductance geometry. |
| 4 (Source) | Source terminal (S) | Second source connection - paralleled internally with Pin 1 to reduce package resistance and improve current sharing. |
| 5 (Drain) | Power output (D) | Second drain connection - paralleled internally with Pin 3 to lower RDS(ON) and enhance thermal spreading. |
| 6 (Thermal Pad) | Exposed drain (D) | Electrically tied to drain; soldered to PCB copper pour to dissipate heat and reduce RθJA by ~40%. |
Key Features
| Feature | Design Value |
|---|---|
| Ultra-low profile (0.6mm height) | Enables integration into ultra-thin consumer devices such as ultrabooks and portable chargers where Z-height is constrained. |
| 100% production UIS tested | Guarantees ruggedness against inductive kickback in motor drivers and DC-DC converter freewheeling paths without derating. |
| 4mm² PCB footprint | Reduces board area by >50% vs. SO-8 or PowerPAK® 1212-8, supporting miniaturized power stage layouts. |
| Lead-free, halogen-free, antimony-free | Fully compliant with RoHS 3 (2015/863/EU) and JEDEC green standards (<900ppm Br+Cl, <1000ppm Sb). |
| Low RDS(ON) × Qg figure-of-merit | 272 mΩ·nC - Balances conduction and switching losses for optimal efficiency in 300kHz–2MHz SMPS designs. |
Applications
| USB-C PD Load Switch | Notebook PC Battery Protection |
|---|---|
|
Use Scenario: High-speed, low-loss power path control between USB-C port and system bus during hot-plug events. IC Role / Device Role / Timing Role: Low-side load switch managing 5–20V, up to 5A power delivery with <100ns turn-on/turn-off timing. Use Value: 16mΩ RDS(ON) limits voltage drop to <80mV at 5A, preserving PD negotiation accuracy and minimizing self-heating. |
Use Scenario: Isolation of main battery from system rail during charging, fault detection, or deep-sleep states. IC Role / Device Role / Timing Role: Bidirectional back-to-back MOSFET switch controlled by battery management IC for overcurrent and short-circuit protection. Use Value: 15.3A IAS and 11.7mJ EAS withstand transient faults without latch-up or parametric shift. |
| AC/DC Adapter Secondary-Side Sync Rectifier | Industrial IoT Sensor Node Power Switch |
|
Use Scenario: Replacing Schottky diodes in 12–19V output stages of compact wall adapters to improve efficiency above 85%. IC Role / Device Role / Timing Role: Synchronous rectifier driven by controller IC with adaptive gate timing to minimize body diode conduction. Use Value: 27mΩ @ 4.5V RDS(ON) enables efficient operation even with 5V gate drive, reducing conduction loss by >40% vs. 40V Schottky. |
Use Scenario: Controlled power gating of wireless transceivers (BLE/Wi-Fi) and analog sensor front-ends in battery-powered edge nodes. IC Role / Device Role / Timing Role: High-side or low-side power switch enabling microamp-level sleep current and fast wake-up response. Use Value: 1µA IDSS leakage at 48V ensures <1µA off-state current, extending 10-year battery life in LPWAN deployments. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel 60V MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| DMT6004LSD-13 | RDS(ON) = 4.2mΩ @ 10V, but larger U-DFN3030-8 package (3.0×3.0mm, 0.85mm height) | Better conduction loss, but incompatible PCB footprint and higher profile - unsuitable for ultra-thin designs. | Select only if thermal budget allows larger package and RDS(ON) reduction outweighs size penalty. |
| DMTH6016LPS-13 | Same RDS(ON) (16mΩ @ 10V), but PowerDI® 3333 package (3.3×3.3mm, 1.0mm height), higher RθJA (105°C/W) | Higher power dissipation margin due to larger copper area, but requires 2.7× more board space. | Prefer for high-volume industrial designs where thermal mass matters more than footprint. |
Compared with DMT6016LFDF, DMT6004LSD-13 offers lower conduction loss at the cost of size and height, while DMTH6016LPS-13 trades footprint efficiency for easier thermal management - making DMT6016LFDF optimal for space-constrained, high-density power stages.
Availability
DMT6016LFDF is available at Aetrix Electronics and suitable for USB-C PD load switching, notebook PC battery protection, and industrial IoT sensor node power gating requiring stable component supply and long-term lifecycle support.
Supply support for DMT6016LFDF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design, manufacturing, and sales operations across Asia, Europe, and North America.
The DMT6016LFDF belongs to Diodes' "PowerMOS™" portfolio, engineered specifically for high-efficiency, space-constrained power management in consumer and computing applications where low RDS(ON), small footprint, and robust UIS performance are mandatory.
FAQ
What is the maximum continuous drain current for DMT6016LFDF at 70°C ambient?
The DMT6016LFDF supports 7.1A continuous drain current at TA = +70°C with VGS = 10V, based on thermal derating from its 8.9A rating at 25°C and 66°C/W RθJA on a standard FR-4 board with recommended copper layout. This value assumes no additional heatsinking beyond the PCB thermal pad.
Is DMT6016LFDF qualified for automotive applications?
DMT6016LFDF is not pre-qualified to AEC-Q101 in standard production, but Diodes Incorporated offers AEC-Q101 qualification upon customer request with change-controlled manufacturing in IATF 16949-certified facilities. Automotive-grade versions require separate part numbering and PPAP documentation.
How does the U-DFN2020-6 (Type F) package affect thermal performance?
The U-DFN2020-6 (Type F) package uses an exposed drain pad soldered to PCB copper, achieving RθJA = 66°C/W (vs. 153°C/W with minimal pads). Thermal performance depends critically on solder coverage and copper area - Diodes recommends ≥100mm² of 2oz copper connected to the pad for optimal results.
Can DMT6016LFDF replace a standard SO-8 MOSFET in existing designs?
No - DMT6016LFDF uses a 2.0×2.0mm U-DFN2020-6 footprint incompatible with SO-8 land patterns. Direct replacement requires PCB redesign, including new pad layout, stencil aperture, and reflow profile validation due to its bottom-terminated thermal pad and fine-pitch terminals.
DMT6016LFDF-13 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Diodes Incorporated
- Series:
- -
- Package/Case:
- 6-UDFN Exposed Pad
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 60 V
- Current - Continuous Drain (Id) @ 25°C:
- 8.9A (Ta)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 16mOhm @ 10A, 10V
- Vgs(th) (Max) @ Id:
- 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 17 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 864 pF @ 30 V
- FET Feature:
- -
- Power Dissipation (Max):
- 820mW (Ta)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- U-DFN2020-6 (Type F)
DMT6016LFDF-13 FAQ
1.How can I place an order for DMT6016LFDF-13 through Aetrix?
Please submit a Request for Quotation (RFQ) for DMT6016LFDF-13 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for DMT6016LFDF-13 reliable?
The price and inventory of DMT6016LFDF-13 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMT6016LFDF-13 is usually 5 days.
3.What payment methods are accepted for DMT6016LFDF-13?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMT6016LFDF-13 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for DMT6016LFDF-13?
DMT6016LFDF-13 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your DMT6016LFDF-13 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for DMT6016LFDF-13?
For technical support, including DMT6016LFDF-13 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMT6016LFDF-13 requirements.
6.How does Aetrix verify that DMT6016LFDF-13 is sourced from the original manufacturer or authorized distributors?
All DMT6016LFDF-13 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMT6016LFDF-13 meets industry standards.
7.What is the process for return or replacement of DMT6016LFDF-13?
All DMT6016LFDF-13 units undergo pre-shipment inspection (PSI). If there is an issue with DMT6016LFDF-13, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The DMT6016LFDF-13 part is unused and in its original packaging.
Return procedure for DMT6016LFDF-13:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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