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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Diodes Incorporated DMT6016LPSW-13

Name: DMT6016LPSW-13
Brand: Diodes Incorporated
SKU: DMT6016LPSW-13
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: DMT6016LPSW-13

Manufacturer:: Diodes Incorporated

Category:: FETs, MOSFETs

Package:: 8-PowerTDFN

Datasheet:: DMT6016LPSW-13.pdf

Description:: MOSFET N-CH 60V PWRDI5060

Quantity:: RFQ Add To RFQ list

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Product details

Overview

DMT6016LPSW from Diodes Incorporated is a 60V N-channel enhancement-mode MOSFET in PowerDI5060-8 (SWP) package, optimized for high-efficiency power conversion with 16.5 mΩ R_DS(ON) @ V_GS = 10 V, 43 A continuous drain current at T_C = +25°C, and fast switching (t_R = 5.2 ns, t_F = 7 ns). It serves as a primary synchronous rectifier or high-side switch in DC-DC converters.

For engineers reviewing the DMT6016LPSW datasheet, DMT6016LPSW pinout, DMT6016LPSW application, or DMT6016LPSW equivalent, key selection criteria include R_DS(ON) at 4.5 V (26 mΩ), 100% production-tested UIS robustness, wettable flank for automated optical inspection, thermal resistance R_θJC = 3°C/W, and body diode recovery charge Q_RR = 11 nC.

Technical Context

This MOSFET employs trench-gate silicon technology to achieve low conduction loss while maintaining controlled gate charge (Q_g = 17 nC @ 10 V) and minimized reverse transfer capacitance (C_rss = 27 pF), enabling stable operation in hard-switched and synchronous rectification topologies. Its 150°C maximum junction temperature and 3°C/W junction-to-case thermal resistance support high-power-density board layouts.

The device integrates a fast, low-V_SD body diode (V_SD = 0.7–1.2 V @ I_S = 1 A) with 22 ns reverse recovery time and 11 nC Q_RR, reducing switching losses in flyback and buck-boost converters. The PowerDI5060-8 package features an exposed drain pad for direct thermal coupling and wettable flanks for solder-joint quality verification.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	60 V - Withstands up to 60 V drain-source blocking voltage without breakdown, suitable for 48 V input systems and PoE-powered designs.
R_DS(ON)	16.5 mΩ @ V_GS = 10 V, 20 A - Enables <1.3 W conduction loss at 43 A in thermally optimized layouts using the exposed drain pad.
Q_g	17 nC @ V_GS = 10 V - Low gate charge reduces driver power demand and enables efficient operation at >500 kHz switching frequencies.
t_R/t_F	5.2 ns / 7 ns - Fast edge rates minimize overlap loss in synchronous rectifiers and reduce EMI generation in compact converters.
R_θJC	3°C/W - Allows direct heatsinking via the exposed drain pad, supporting >40 W dissipation with minimal thermal rise under forced-air cooling.
Q_RR	11 nC - Low body diode recovery charge limits voltage overshoot and ringing during commutation, improving reliability in discontinuous conduction mode.
E_AS	11.7 mJ - Rated avalanche energy ensures robustness against inductive transients in motor drive and converter output stages.

Pinout & Package

DMT6016LPSW uses the PowerDI5060-8 (SWP) surface-mount package with an exposed drain pad on the bottom side for thermal management and wettable flanks for automated optical inspection. Dimensions comply with JEDEC MO-295AA standard.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 3, 4, 5, 6, 7, 8 (Drain)	Power Drain (Common Source Connection)	All eight pins are internally connected to the drain terminal and the exposed copper pad - forms the main current path and primary thermal interface.
G (Gate)	Control Input	Single gate terminal located at Pin 1 per top-view marking; requires ≤±20 V gate drive and delivers 17 nC total gate charge.
S (Source)	Reference Node	Source terminals occupy Pins 2–8 in bottom view layout; provides return path for load current and reference for gate drive.

Key Features

Feature	Design Value
100% UIS production test	Guarantees avalanche ruggedness across full production lot - eliminates field failures due to unclamped inductive spikes in motor drives and DC-DC outputs.
Wettable flank leads	Enables AOI-compatible solder-joint inspection on all eight drain terminals - critical for automotive and industrial PCB assembly traceability.
Low C_rss (27 pF)	Reduces Miller-induced gate oscillation and improves noise immunity in high-dV/dt environments like half-bridge gate drivers.
Green, halogen-free construction	Meets IPC-1752A Class 3 material declarations with <900 ppm Br/Cl and <1000 ppm Sb - supports global environmental compliance without performance trade-offs.
Thermal R_θJC = 3°C/W	Permits >40 W power handling with minimal junction-to-case temperature rise - enables single-device solutions in space-constrained 12–48 V intermediate bus converters.

Applications

Synchronous Rectifier in Isolated DC-DC

High-Side Switch in Buck Converters

Use Scenario: Replaces Schottky diode in secondary-side synchronous rectification of 24–48 V input isolated flyback or forward converters delivering 10–30 A.

IC Role / Device Role / Timing Role: Acts as actively controlled low-loss conduction path synchronized to primary-side switching, turning on during diode conduction interval.

Use Value: Reduces conduction loss by >40% vs. 40 V Schottky (e.g., 0.5 V drop → 0.07 V drop at 20 A), increasing efficiency from 89% to 94% at full load.

Use Scenario: High-side switch in 12 V input, 3.3/5 V output buck regulators powering FPGA core rails or ASIC logic supplies.

IC Role / Device Role / Timing Role: Carries full load current during high-side conduction phase; operates with external bootstrap gate driver (e.g., MP62551).

Use Value: Delivers 34 A at 4.5 V gate drive, enabling compact 2-phase designs with <1.5 mΩ effective R_DS(ON) per phase and <20 mV output ripple.

LED Backlight Driver

Industrial Motor Control Stage

Use Scenario: PWM-controlled current sink for multi-string LED backlighting in commercial displays (e.g., 55″ LCD panels with 12 parallel strings).

IC Role / Device Role / Timing Role: Sinks string current during PWM ON period; body diode conducts during OFF period in boost-based constant-current topology.

Use Value: Q_RR = 11 nC and t_RR = 22 ns suppress voltage spikes during diode recovery, eliminating need for snubbers and reducing EMI filter size by 30%.

Use Scenario: Half-bridge leg in 24 V brushed DC motor H-bridge driver for factory automation actuators (e.g., valve positioners, conveyor modules).

IC Role / Device Role / Timing Role: Provides bidirectional current control with integrated body diode conducting freewheeling current during PWM dead-time.

Use Value: 15.3 A I_AS and 11.7 mJ E_AS withstand inductive kickback from 50 mH motor windings without external clamping, simplifying BOM.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
DMTH6016LPSW-13	Same die, identical R_DS(ON) and Q_g, but rated for 175°C TJ max and qualified to AEC-Q101 Grade 1.	Required for automotive cabin modules (e.g., HVAC blower control) where ambient exceeds 105°C.	Select when extended temperature qualification or automotive PPAP documentation is mandatory.
IPB017N06N3ATMA1	Lower R_DS(ON) (1.7 mΩ), higher Q_g (65 nC), TO-263-7 package with larger thermal mass but no wettable flanks.	Better suited for high-current (>60 A), low-frequency (<100 kHz) applications where gate drive capability exceeds 2 A peak.	Prefer for industrial UPS inverters needing ultra-low conduction loss; avoid if AOI or high-frequency operation is required.

Compared with DMTH6016LPSW-13, DMT6016LPSW offers identical electrical performance at lower cost and qualification scope, while IPB017N06N3ATMA1 trades gate drive complexity and optical inspectability for lower R_DS(ON) in thermally relaxed, lower-frequency systems.

Availability

DMT6016LPSW is available at Aetrix Electronics and suitable for synchronous rectification, DC-DC converter high-side switching, and LED backlight driver applications requiring stable component supply, consistent parametric binning, and full traceability from wafer lot to shipment.

Supply support for DMT6016LPSW includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design centers across Asia and manufacturing in China, Taiwan, and Malaysia.

This device belongs to Diodes' PowerMOS™ portfolio, engineered specifically for high-efficiency power conversion in consumer, industrial, and computing applications where low R_DS(ON), fast switching, and robust packaging are essential.

FAQ

What is the maximum continuous drain current at T_A = +70°C?

The DMT6016LPSW supports 9.0 A continuous drain current at ambient temperature +70°C with standard FR-4 PCB mounting (2 oz copper, 1-inch² thermal pad). This rating reflects derating due to reduced thermal dissipation at elevated ambient temperatures and must be verified with actual board layout thermal simulation.

Does this MOSFET require a gate resistor for stability?

A gate resistor of 6 Ω is used in the datasheet's switching time test conditions (t_R, t_F) to limit peak gate current and dampen potential oscillation. For most 500 kHz–1 MHz DC-DC applications, a 2–10 Ω non-inductive resistor between driver output and gate is recommended to balance switching speed and EMI control.

Can DMT6016LPSW replace a standard SO-8 MOSFET in existing layouts?

No - the PowerDI5060-8 (SWP) footprint differs significantly from SO-8: it has eight drain pins arranged in two rows and an exposed thermal pad requiring specific stencil aperture and reflow profile. Direct replacement requires PCB redesign and thermal validation per the manufacturer's suggested pad layout.

Is the body diode suitable for reverse recovery in hard-switched topologies?

Yes - with t_RR = 22 ns and Q_RR = 11 nC, the intrinsic body diode performs reliably in hard-switched buck and flyback converters operating up to 1 MHz. However, its softness factor is not specified, so use in ZVS circuits requires empirical validation of voltage overshoot.

DMT6016LPSW-13 Specifications

Product attributes: Attribute value

Manufacturer:: Diodes Incorporated

Series:: -

Package/Case:: 8-PowerTDFN

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 60 V

Current - Continuous Drain (Id) @ 25°C:: 11.2A (Ta), 43A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 16.5mOhm @ 20A, 10V

Vgs(th) (Max) @ Id:: 2.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 17 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 864 pF @ 30 V

FET Feature:: -

Power Dissipation (Max):: 2.84W (Ta), 41.67W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount, Wettable Flank

Supplier Device Package:: PowerDI5060-8 (Type UX)

DMT6016LPSW-13 FAQ

1.How can I place an order for DMT6016LPSW-13 through Aetrix?

Please submit a Request for Quotation (RFQ) for DMT6016LPSW-13 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for DMT6016LPSW-13 reliable?

The price and inventory of DMT6016LPSW-13 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMT6016LPSW-13 is usually 5 days.

3.What payment methods are accepted for DMT6016LPSW-13?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMT6016LPSW-13 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for DMT6016LPSW-13?

DMT6016LPSW-13 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your DMT6016LPSW-13 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for DMT6016LPSW-13?

For technical support, including DMT6016LPSW-13 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMT6016LPSW-13 requirements.

6.How does Aetrix verify that DMT6016LPSW-13 is sourced from the original manufacturer or authorized distributors?

All DMT6016LPSW-13 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMT6016LPSW-13 meets industry standards.

7.What is the process for return or replacement of DMT6016LPSW-13?

All DMT6016LPSW-13 units undergo pre-shipment inspection (PSI). If there is an issue with DMT6016LPSW-13, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The DMT6016LPSW-13 part is unused and in its original packaging.

Return procedure for DMT6016LPSW-13:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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