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Diodes Incorporated DMT6017LDV-13
- Part No.:
- DMT6017LDV-13
- Manufacturer:
- Diodes Incorporated
- Category:
- FET, MOSFET Arrays
- Package:
- 8-PowerVDFN
- Datasheet:
-
DMT6017LDV-13.pdf
- Description:
- MOSFET 2N-CH 25.3A PWRDI3333
- Quantity:
- Payment:
- Shipping:
Inventory:7,282
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Product details
Overview
DMT6017LDV-13 from Diodes Incorporated is a 65V N-channel enhancement-mode MOSFET in PowerDI3333-8 package, rated for 25.3A continuous drain current at TC = +25°C, with RDS(ON) of 22 mΩ @ VGS = 10V and 29 mΩ @ VGS = 4.5V. It delivers low conduction loss and fast switching for high-efficiency DC-DC converters and wireless charging power stages.
For engineers reviewing the DMT6017LDV-13 datasheet, DMT6017LDV-13 pinout, DMT6017LDV-13 application, or DMT6017LDV-13 equivalent, key selection criteria include its dual-gate/dual-drain/dual-source configuration, 100% production-tested UIS robustness, thermal resistance of 5.9°C/W (junction-to-case), and compatibility with 4.5V logic-level gate drive in compact space-constrained power modules.
Technical Context
This dual-die N-channel MOSFET integrates two identical 65V/25.3A silicon die in a single PowerDI3333-8 package, sharing common source terminals (S1/S2) and independent gate/drain connections (G1/D1 and G2/D2). Its layout supports paralleled operation without external current-sharing components.
The device features ESD-protected gates, low input capacitance (Ciss = 891 pF), and fast switching (tD(ON) = 4.0 ns, tD(OFF) = 11.7 ns), enabling high-frequency synchronous rectification and active clamp topologies where gate charge (Qg = 15.3 nC @ 10V) and reverse transfer capacitance (Crss = 29 pF) directly impact efficiency.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 65 V - Maximum blocking voltage before avalanche onset; enables use in 48V bus and USB PD 3.1 applications. |
| RDS(ON) | 22 mΩ @ VGS = 10V - Low conduction loss at full gate drive; reduces I²R heating in high-current paths. |
| ID (Continuous) | 25.3 A @ TC = +25°C - Sustained current capability under heatsink-cooled conditions; supports >20W power delivery. |
| Qg | 15.3 nC @ VGS = 10V - Gate charge determines driver strength requirement and switching loss in hard-switched converters. |
| RθJC | 5.9 °C/W - Junction-to-case thermal resistance enables direct thermal coupling to PCB copper or heatsink for thermal management. |
| tRR | 21.1 ns - Body diode reverse recovery time; critical for synchronous rectifier timing and shoot-through avoidance. |
| EAS | 18 mJ - Single-pulse avalanche energy rating; ensures ruggedness during inductive load transients without failure. |
Pinout & Package
Package: PowerDI3333-8 (Type UXC), surface-mount, thermally enhanced plastic case with matte tin–annealed copper leadframe; moisture sensitivity level 1 per J-STD-020.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| G1 | Gate of first MOSFET die | Independent control input for first channel; enables phase-split or interleaved drive configurations. |
| D1 | Drain of first MOSFET die | High-side or low-side switch node connection; isolated from D2 for dual-switch topologies. |
| S1 | Source of first MOSFET die | Internally tied to S2; forms common source node for dual-die configuration and Kelvin sensing. |
| G2 | Gate of second MOSFET die | Independent gate terminal for second channel; allows asymmetrical PWM or redundancy schemes. |
| D2 | Drain of second MOSFET die | Second switch node; supports parallel operation or half-bridge complementary switching. |
| S2 | Source of second MOSFET die | Internally bonded to S1; provides shared return path and minimizes source inductance in high-di/dt circuits. |
Key Features
| Feature | Design Value |
|---|---|
| 100% UIS tested in production | Guarantees avalanche ruggedness up to 19A/18mJ without derating; eliminates need for external snubbers in flyback or LLC primary switches. |
| Low RDS(ON) @ 4.5V | 29 mΩ enables direct drive from 5V microcontrollers or PWM controllers without level-shifting, reducing BOM count. |
| Low Ciss/Coss ratio | Ciss = 891 pF, Coss = 223 pF - Supports ZVS operation in resonant converters by minimizing capacitive losses during dead-time. |
| ESD-protected gate | HBM rating ≥2 kV - Reduces handling sensitivity during SMT assembly and field service, improving manufacturing yield. |
| Green, RoHS-compliant construction | Halogen- and antimony-free molding compound (<900 ppm Br/Cl, <1000 ppm Sb); meets automotive and industrial environmental compliance mandates. |
Applications
| Wireless Charging Transmitter | High-Density DC-DC Converter |
|---|---|
|
Use Scenario: 15W Qi-compliant transmitter using dual-phase Class-E amplifier topology. IC Role / Device Role / Timing Role: Dual N-channel switch operating in push-pull mode at 125–205 kHz; each die handles one phase with synchronized gate drive. Use Value: Low RDS(ON) and fast tF = 3.3 ns minimize conduction and switching losses, achieving >85% system efficiency at full load. |
Use Scenario: 12V-to-1.2V, 25A point-of-load converter in server VRM with 500 kHz switching frequency. IC Role / Device Role / Timing Role: Synchronous rectifier in buck stage; dual-die configuration shares current while maintaining low thermal impedance via common source. Use Value: RθJC = 5.9°C/W and low Qgd/Qgs ratio enable tight thermal coupling to PCB and reduce gate drive losses in high-frequency operation. |
| USB PD 3.1 Power Delivery | Industrial Motor Drive Half-Bridge |
|
Use Scenario: 48V input, 28V/5A programmable power supply compliant with USB PD 3.1 Extended Power Range (EPR). IC Role / Device Role / Timing Role: High-side switch in active-clamp forward or asymmetrical half-bridge; withstands 65V bus with margin for transient spikes. Use Value: BVDSS = 65V and EAS = 18 mJ ensure reliable operation during 48V line surges and inductive kickback without clamping diodes. |
Use Scenario: 24V BLDC motor controller for HVAC blowers with integrated half-bridge and bootstrap gate drive. IC Role / Device Role / Timing Role: Low-side switch in half-bridge leg; dual-die structure allows redundant current path or split-phase commutation control. Use Value: Independent G1/G2 pins support staggered turn-on for reduced EMI, while low VGS(TH) (1–2.3 V) ensures clean turn-on with standard 3.3V logic. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar dual-die N-channel MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| DMT6017LSDV-13 | Same die, but PowerDI5060-8 package with larger thermal pad and lower RθJA (39°C/W vs. 53.5°C/W). | Better suited for higher ambient temperature environments (>85°C) or unheatsinked designs requiring >30W dissipation. | Select when board-level thermal budget is constrained and PCB copper area for heat spreading is limited. |
| DMN6017LFG-7 | Single-die 65V/25.3A MOSFET in PowerDI3333-8; no dual-gate/dual-drain functionality; RDS(ON) identical at 22 mΩ @ 10V. | Applicable only in single-switch topologies; lacks independent channel control needed for interleaving or redundancy. | Choose for cost-sensitive, non-redundant applications where dual-die benefits are unnecessary. |
Compared with DMT6017LSDV-13, the DMT6017LDV-13 trades thermal performance for smaller footprint and lower profile; versus DMN6017LFG-7, it adds channel independence and current-sharing capability at no increase in RDS(ON) or gate charge.
Availability
DMT6017LDV-13 is available at Aetrix Electronics and suitable for wireless charging transmitters, high-density DC-DC converters, and USB PD 3.1 power delivery systems requiring stable component supply across extended production lifecycles.
Supply support for DMT6017LDV-13 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, specializing in high-performance power management, signal integrity, and protection solutions for industrial, computing, and consumer markets.
The DMT6017LDV belongs to Diodes' Power MOSFET product line, engineered specifically for high-efficiency, high-power-density switching applications where thermal performance, avalanche ruggedness, and logic-level drive compatibility are critical design requirements.
FAQ
What is the maximum safe operating junction temperature for DMT6017LDV-13?
The absolute maximum junction temperature is +150°C, and the device is characterized for continuous operation across –55°C to +150°C. Derating begins at TJ > 125°C per Figure 6 and Figure 7, where RDS(ON) increases ~20% at 150°C versus 25°C at VGS = 10V. Thermal design must maintain TJ ≤ 150°C under worst-case power dissipation and ambient conditions.
Can DMT6017LDV-13 be used in synchronous rectification without external gate drivers?
Yes - its gate threshold voltage (VGS(TH) = 1–2.3 V) and low RDS(ON) at 4.5V (29 mΩ) allow direct interface with standard 5V or 3.3V PWM controllers. However, for optimal switching speed and reduced Miller-induced shoot-through risk, a dedicated gate driver with ≥1A peak output is recommended when operating above 300 kHz or with high di/dt loads.
Is the internal body diode suitable for reverse recovery in hard-switched applications?
The body diode has tRR = 21.1 ns and QRR = 11.9 nC at IF = 6A, making it suitable for moderate-frequency hard-switched freewheeling, but not ideal for high-frequency zero-voltage switching without careful dead-time tuning. For ZVS operation, pairing with an external Schottky diode is advised to avoid reverse recovery losses.
How does the dual-die configuration affect PCB layout and thermal management?
The shared S1/S2 terminal simplifies source routing and enables Kelvin sensing, while independent G1/G2 and D1/D2 pins require separate gate traces and switch-node copper pours to prevent crosstalk. Thermal vias should be placed under the exposed source pad (pins S1/S2) to maximize heat transfer to inner ground planes, leveraging the 5.9°C/W RθJC specification.
DMT6017LDV-13 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Diodes Incorporated
- Series:
- -
- Package/Case:
- 8-PowerVDFN
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Technology:
- MOSFET (Metal Oxide)
- Configuration:
- 2 N-Channel (Dual)
- FET Feature:
- -
- Drain to Source Voltage (Vdss):
- -
- Current - Continuous Drain (Id) @ 25°C:
- 25.3A (Tc)
- Rds On (Max) @ Id, Vgs:
- 22mOhm @ 6A, 10V
- Vgs(th) (Max) @ Id:
- 2.3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- -
- Input Capacitance (Ciss) (Max) @ Vds:
- -
- Power - Max:
- -
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- PowerDI3333-8 (Type UXC)
DMT6017LDV-13 FAQ
1.How can I place an order for DMT6017LDV-13 through Aetrix?
Please submit a Request for Quotation (RFQ) for DMT6017LDV-13 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for DMT6017LDV-13 reliable?
The price and inventory of DMT6017LDV-13 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMT6017LDV-13 is usually 5 days.
3.What payment methods are accepted for DMT6017LDV-13?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMT6017LDV-13 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for DMT6017LDV-13?
DMT6017LDV-13 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your DMT6017LDV-13 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for DMT6017LDV-13?
For technical support, including DMT6017LDV-13 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMT6017LDV-13 requirements.
6.How does Aetrix verify that DMT6017LDV-13 is sourced from the original manufacturer or authorized distributors?
All DMT6017LDV-13 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMT6017LDV-13 meets industry standards.
7.What is the process for return or replacement of DMT6017LDV-13?
All DMT6017LDV-13 units undergo pre-shipment inspection (PSI). If there is an issue with DMT6017LDV-13, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The DMT6017LDV-13 part is unused and in its original packaging.
Return procedure for DMT6017LDV-13:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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