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Diodes Incorporated DMT6017LDV-7
- Part No.:
- DMT6017LDV-7
- Manufacturer:
- Diodes Incorporated
- Category:
- FET, MOSFET Arrays
- Package:
- 8-PowerVDFN
- Datasheet:
-
DMT6017LDV-7.pdf
- Description:
- MOSFET 2N-CH 25.3 PWRDI3333
- Quantity:
- Payment:
- Shipping:
Inventory:2,609
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Product details
Overview
DMT6017LDV-7 from Diodes Incorporated is a 65V N-channel enhancement-mode dual MOSFET in PowerDI3333-8 (Type UXC) package, featuring 22 mΩ RDS(ON) @ VGS = 10 V, 25.3 A continuous drain current at TC = +25°C, and 100% production-tested UIS robustness. It serves as a high-efficiency synchronous rectifier or power switch in compact DC-DC converters and wireless charging transmitters.
For engineers reviewing the DMT6017LDV-7 datasheet, DMT6017LDV-7 pinout, DMT6017LDV-7 application, or DMT6017LDV-7 equivalent, key selection criteria include its dual-source/dual-gate layout for half-bridge integration, low gate charge (Qg = 15.3 nC @ 10 V), and thermal resistance of 5.9°C/W (junction-to-case), critical for thermally constrained power stages.
Technical Context
This dual N-channel MOSFET integrates two matched 65V/25A switches in a single PowerDI3333-8 package with independent gate terminals (G1, G2) and shared source terminals (S1, S2) - enabling half-bridge or dual-phase synchronous buck topologies without external paralleling. Its low Ciss (891 pF) and fast switching (tr = 5.9 ns, tf = 3.3 ns) support high-frequency operation up to 1 MHz.
The device employs trench-gate technology to achieve 17.5 mΩ typical RDS(ON) at 10 V drive while maintaining tight VGS(TH) distribution (1–2.3 V) and low Qgd/Qg ratio (3.1/15.3 nC), reducing Miller-induced shoot-through risk in hard-switched applications.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 65 V - Withstands up to 65 V drain-source voltage, suitable for 48 V input bus and PoE++ systems. |
| RDS(ON) @ 10 V | 22 mΩ max - Enables <1.5 W conduction loss at 25 A, critical for high-current, low-voltage output rails. |
| ID (continuous) | 25.3 A @ TC = +25°C - Supports high-power density designs when mounted on 2 oz copper with thermal pad. |
| Qg @ 10 V | 15.3 nC - Reduces gate drive power and enables use with low-current drivers in space-constrained controllers. |
| tr/tf | 5.9 ns / 3.3 ns - Minimizes switching transition losses in high-frequency (>500 kHz) SMPS designs. |
| EAS | 18 mJ - Confirmed avalanche energy rating ensures reliability under inductive load transients without snubbers. |
| RθJC | 5.9°C/W - Enables direct thermal coupling to heatsink or PCB copper, supporting >3 W dissipation in optimized layouts. |
Pinout & Package
Package: PowerDI3333-8 (Type UXC), surface-mount, dual-source dual-gate configuration with exposed thermal pad (D1/D2 drain terminals connected internally to leadframe).
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| G1 | Gate of first MOSFET | Independent control input for channel 1; requires dedicated gate resistor to prevent oscillation. |
| S1 | Source of first MOSFET | Common source node for channel 1; electrically isolated from S2 in internal layout but externally bonded to same pad. |
| D1 | Drain of first MOSFET | High-side switch node in half-bridge; tied to internal leadframe for thermal conduction. |
| G2 | Gate of second MOSFET | Independent control input for channel 2; supports asymmetrical drive timing in phase-shifted topologies. |
| S2 | Source of second MOSFET | Common source node for channel 2; shares thermal pad with S1 but has separate bond wire path per datasheet schematic. |
| D2 | Drain of second MOSFET | Low-side switch node in half-bridge; symmetrical layout with D1 enables balanced current sharing. |
Key Features
| Feature | Design Value |
|---|---|
| 100% UIS tested | Guarantees minimum 19 A avalanche current and 18 mJ energy handling across production lot, eliminating need for external clamping in flyback or LLC resonant circuits. |
| Low Qgd/Qg ratio | 0.20 (3.1/15.3 nC) - Reduces Miller plateau duration and improves controllability during hard commutation in synchronous rectifiers. |
| ESD-protected gate | HBM rating ≥2 kV - Allows safe handling and board-level assembly without special ESD precautions beyond standard Class 1B protocols. |
| Green compound & lead-free | Halogen- and antimony-free molding compound (<900 ppm Br+Cl, <1000 ppm Sb); compliant with RoHS 3 and JEDEC J-STD-020 Level 1 moisture sensitivity. |
Applications
| Wireless Charging Transmitter | 48V Input DC-DC Converter |
|---|---|
|
Use Scenario: High-frequency (100–300 kHz) resonant inverter stage driving Qi-compliant transmitter coils. IC Role / Device Role: Dual N-channel switch implementing half-bridge topology with synchronous gate drive. Use Value: Low RDS(ON) and fast switching minimize conduction and switching losses, enabling >92% efficiency at 15 W output with minimal heatsinking. |
Use Scenario: Primary-side switch in isolated 48 V to 12 V/24 V telecom or industrial DC-DC module. IC Role / Device Role: High-side and low-side power switch in active-clamp forward or phase-shifted full-bridge converter. Use Value: Matched RDS(ON) and thermal coupling between channels ensure balanced current sharing and reduce thermal derating overhead. |
| USB PD 3.1 Power Delivery | Motor Drive Half-Bridge |
|
Use Scenario: Output stage of programmable power supply delivering up to 28 V/5 A in USB PD 3.1 EPR mode. IC Role / Device Role: Dual synchronous rectifier in buck-boost or SEPIC topology regulating wide-output voltage range. Use Value: Low VGS(TH) (1–2.3 V) allows direct drive from 3.3 V microcontroller GPIOs, eliminating level-shifter complexity. |
Use Scenario: H-bridge leg in 24 V BLDC motor driver for robotics or HVAC actuators. IC Role / Device Role: Paired high- and low-side switch controlling phase current direction and PWM duty cycle. Use Value: Independent gate terminals enable precise dead-time control, preventing shoot-through during commutation transitions. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar dual N-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| DMT6017LSD-7 | Same die, identical RDS(ON), Qg, and SOA, but in PowerDI5060-8 package with larger thermal pad and higher PD (3.1 W). | Better thermal performance in high-ambient environments (>70°C), but requires larger PCB footprint and different pad layout. | Select when junction temperature must stay below 125°C under sustained 20 A load without forced airflow. |
| SI7157DP-T1-GE3 | 60 V rating, 2.5 mΩ lower RDS(ON) @ 10 V (19.5 mΩ), but higher Qg (20.5 nC) and no production UIS testing. | Higher conduction efficiency at light loads, but less robust in unclamped inductive switching; requires external avalanche protection. | Select only if system-level testing confirms absence of inductive stress and thermal margin exceeds 25°C above DMT6017LDV-7's rated limit. |
Compared with DMT6017LSD-7, the DMT6017LDV-7 trades thermal headroom for compact size-ideal for space-limited USB-C adapters-while SI7157DP-T1-GE3 offers lower conduction loss but demands careful gate drive design and lacks guaranteed avalanche ruggedness.
Availability
DMT6017LDV-7 is available at Aetrix Electronics and suitable for wireless charging transmitters, 48 V DC-DC converters, and USB PD 3.1 power delivery systems requiring stable component supply, consistent parametric performance, and long-term lifecycle support.
Supply support for DMT6017LDV-7 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design centers across Asia and manufacturing in China, Taiwan, and Malaysia.
The DMT6017LDV-7 belongs to Diodes' PowerMOS™ family, engineered specifically for high-efficiency, high-density power conversion in consumer, computing, and industrial applications where thermal and layout constraints dominate.
FAQ
What is the maximum recommended gate drive voltage for DMT6017LDV-7?
The absolute maximum gate-source voltage is ±16 V per datasheet. For reliable operation, drive voltage should be limited to 10 V to avoid accelerated gate oxide degradation while achieving full enhancement. Driving above 12 V yields diminishing RDS(ON) improvement (<2%) but increases gate leakage and ESD vulnerability.
Can DMT6017LDV-7 be used in parallel configurations?
No-its dual-MOSFET structure is monolithic and internally configured for half-bridge operation, not paralleling. Attempting external parallel connection risks thermal runaway due to mismatched threshold voltages and unequal current sharing. Use discrete single-channel devices like DMN6017LFG-7 for true paralleling.
Is the PowerDI3333-8 package thermally enhanced compared to standard SO-8?
Yes-the PowerDI3333-8 uses an exposed copper leadframe with direct die attachment to the drain terminals, achieving RθJC = 5.9°C/W versus ~35°C/W for standard SO-8. This allows >3× higher power dissipation in the same footprint, confirmed by FR-4 PCB thermal test data in Note 6 of the datasheet.
Does DMT6017LDV-7 support 4.5 V logic-level gate drive?
Yes-it delivers 22.1 A continuous current with RDS(ON) = 29 mΩ at VGS = 4.5 V, making it compatible with 3.3 V and 5 V microcontrollers without level shifters. However, gate charge rises to 7.5 nC at 4.5 V, increasing switching losses by ~35% versus 10 V drive in high-frequency applications.
DMT6017LDV-7 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Diodes Incorporated
- Series:
- -
- Package/Case:
- 8-PowerVDFN
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Technology:
- MOSFET (Metal Oxide)
- Configuration:
- 2 N-Channel (Dual)
- FET Feature:
- -
- Drain to Source Voltage (Vdss):
- -
- Current - Continuous Drain (Id) @ 25°C:
- 25.3 (Tc)
- Rds On (Max) @ Id, Vgs:
- 22mOhm @ 6A, 10V
- Vgs(th) (Max) @ Id:
- 2.3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- -
- Input Capacitance (Ciss) (Max) @ Vds:
- -
- Power - Max:
- -
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- PowerDI3333-8 (Type UXC)
DMT6017LDV-7 FAQ
1.How can I place an order for DMT6017LDV-7 through Aetrix?
Please submit a Request for Quotation (RFQ) for DMT6017LDV-7 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for DMT6017LDV-7 reliable?
The price and inventory of DMT6017LDV-7 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMT6017LDV-7 is usually 5 days.
3.What payment methods are accepted for DMT6017LDV-7?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMT6017LDV-7 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for DMT6017LDV-7?
DMT6017LDV-7 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your DMT6017LDV-7 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for DMT6017LDV-7?
For technical support, including DMT6017LDV-7 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMT6017LDV-7 requirements.
6.How does Aetrix verify that DMT6017LDV-7 is sourced from the original manufacturer or authorized distributors?
All DMT6017LDV-7 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMT6017LDV-7 meets industry standards.
7.What is the process for return or replacement of DMT6017LDV-7?
All DMT6017LDV-7 units undergo pre-shipment inspection (PSI). If there is an issue with DMT6017LDV-7, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The DMT6017LDV-7 part is unused and in its original packaging.
Return procedure for DMT6017LDV-7:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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