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Diodes Incorporated DMT6017LFDF-13
- Part No.:
- DMT6017LFDF-13
- Manufacturer:
- Diodes Incorporated
- Category:
- FETs, MOSFETs
- Package:
- 6-UDFN Exposed Pad
- Datasheet:
-
DMT6017LFDF-13.pdf
- Description:
- MOSFET N-CH 65V 8.1A 6UDFN
- Quantity:
- Payment:
- Shipping:
Inventory:7,370
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Product details
Overview
DMT6017LFDF-13 from Diodes Incorporated is a 65V N-channel enhancement-mode MOSFET in U-DFN2020-6 (Type F) package, optimized for high-efficiency power switching with 18 mΩ RDS(ON) @ VGS = 10 V, 7.1 A ID @ 4.5 V gate drive, and 100% production-tested UIS robustness. It serves as a primary synchronous rectifier or main switch in compact DC-DC converters and wireless charging transmitters.
For engineers reviewing the DMT6017LFDF-13 datasheet, DMT6017LFDF-13 pinout, DMT6017LFDF-13 application, or DMT6017LFDF-13 equivalent, key selection criteria include low-profile thermal performance (0.6 mm height), 4 mm² PCB footprint, ESD-protected gate, and validated avalanche energy (18 mJ) for inductive load reliability.
Technical Context
This MOSFET employs a trench-gate silicon process to achieve low RDS(ON) while maintaining fast switching characteristics: tD(ON) = 4.0 ns, tF = 3.3 ns, and Qgd = 3.1 nC at VDS = 30 V. Its body diode exhibits tRR = 21.1 ns and QRR = 11.9 nC under IF = 6 A / di/dt = 100 A/µs conditions.
The device operates across –55°C to +150°C junction temperature range, with RθJA = 71°C/W on 1-inch² copper pad and RθJC = 10°C/W. Gate threshold voltage is tightly distributed (1.0–2.3 V), enabling stable turn-on control down to 4.5 V logic-level drive.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 65 V - Supports input rails up to 48 V nominal systems with margin for transient spikes. |
| RDS(ON) | 18 mΩ @ VGS = 10 V - Enables <1.1 W conduction loss at 7.5 A continuous drain current. |
| ID (max) | 8.1 A @ TA = 25°C - Sustains full-load operation in space-constrained 12 V–24 V buck converters. |
| Qg | 15.3 nC @ VGS = 10 V - Matches standard gate drivers without requiring oversized external buffers. |
| EAS | 18 mJ - Guarantees reliable unclamped inductive switching in adapter and motor-control flyback paths. |
| TJ Range | –55°C to +150°C - Qualified for automotive cabin and industrial ambient environments without derating. |
| Ciss | 891 pF - Limits high-frequency gate drive current demand and improves EMI predictability. |
Pinout & Package
Package: U-DFN2020-6 (Type F), 2.0 × 2.0 × 0.6 mm, lead-free NiPdAu-plated terminals, moisture sensitivity level 1.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Pin 1 (G) | Gate | Control terminal; ESD-protected; requires ≤±16 V drive; connects to PWM controller output. |
| Pins 2 & 3 (S) | Source | Power return path; tied to ground or low-side reference; forms common node with internal body diode cathode. |
| Pins 4 & 5 (D) | Drain | High-side power node; connects to input rail or inductor; carries full load current and avalanche energy. |
| Pin 6 (S) | Source (exposed pad) | Thermal and electrical source connection; must be soldered to PCB copper pour for RθJA = 71°C/W performance. |
Key Features
| Feature | Design Value |
|---|---|
| 100% UIS tested | Ensures every unit withstands real-world inductive turn-off stress without parameter shift or failure. |
| 0.6 mm profile | Enables integration into ultra-thin adapters and portable wireless charging pads where Z-height is constrained. |
| 4 mm² footprint | Reduces PCB area by >40% vs. SO-8 equivalents, supporting high-density multi-phase power stages. |
| ESD-protected gate | HBM rating ≥2 kV allows safe handling and assembly without special ESD controls beyond standard practices. |
| Halogen & antimony free | Meets IPC-1752A "Green" requirements (<900 ppm Br, <900 ppm Cl, <1000 ppm Sb) for eco-compliant end products. |
Applications
| DC-DC Converter | USB-C Power Adapter |
|---|---|
|
Use Scenario: Primary-side synchronous rectifier in 65 W USB PD buck-boost converter operating at 200–500 kHz. IC Role / Device Role: Low-loss power switch replacing Schottky diode to reduce conduction loss and improve efficiency above 94%. Use Value: 18 mΩ RDS(ON) cuts rectifier dissipation by 65% vs. 40 V Schottky, directly enabling 10°C lower MOSFET case temperature. |
Use Scenario: Secondary-side switch in compact 30 mm × 30 mm wall-mounted USB-C charger with dual-output capability. IC Role / Device Role: High-density main switch in isolated flyback topology, mounted directly on top-layer copper. Use Value: 0.6 mm height and 4 mm² footprint allow placement beneath transformer, reducing overall module thickness to <15 mm. |
| Wireless Charging Transmitter | Industrial Sensor Node Power Supply |
|
Use Scenario: Half-bridge switch in 15 W Qi-compliant transmitter coil driver operating at 110–205 kHz. IC Role / Device Role: Fast-switching, low-Qgd MOSFET minimizing dead-time losses and EMI during zero-voltage switching transitions. Use Value: 3.1 nC Qgd and 3.3 ns tF enable clean switching edges, reducing filter component count by two per channel. |
Use Scenario: Input protection and load switching in battery-powered IIoT sensor node with 10-year field life requirement. IC Role / Device Role: Reverse-polarity and overcurrent protected power path controller using integrated body diode and UIS hardening. Use Value: 18 mJ EAS and –55°C to +150°C rating ensure survival during battery hot-swap events and outdoor thermal cycling. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| DMN6017LFG-7 | Same die, but in SOT-23-6 package; RθJA = 157°C/W; no exposed thermal pad. | Limited to <1.5 W continuous power; unsuitable for >5 A steady-state loads or high ambient temperatures. | Select only when board space permits larger footprint and thermal budget allows higher junction rise. |
| AOB2018L | 60 V, 17 mΩ @ 10 V, but 3.0 × 3.0 mm TDFN; Qg = 18.5 nC; no production UIS test data published. | Higher gate charge increases driver loss; lacks documented avalanche ruggedness for flyback snubberless designs. | Preferable only if 3.0 mm × 3.0 mm layout is acceptable and system-level UIS validation is performed externally. |
Compared with DMT6017LFDF-13, DMN6017LFG-7 trades thermal performance for legacy package compatibility, while AOB2018L offers marginally lower RDS(ON) but sacrifices proven UIS robustness and footprint efficiency-making DMT6017LFDF-13 optimal for miniaturized, high-reliability power switches.
Availability
DMT6017LFDF-13 is available at Aetrix Electronics and suitable for USB-C power adapters, wireless charging transmitters, and industrial sensor node power supplies requiring stable component supply, consistent parametric performance, and long-term lifecycle support.
Supply support for DMT6017LFDF-13 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, specializing in high-reliability power management, signal integrity, and protection solutions for industrial, computing, and consumer markets.
This MOSFET belongs to Diodes' "PowerMOS™" portfolio, engineered specifically for high-frequency, high-efficiency switching in space-constrained power conversion systems where thermal density and avalanche immunity are critical.
FAQ
What is the maximum continuous drain current at 70°C ambient?
The DMT6017LFDF-13 supports 6.5 A continuous drain current at TA = +70°C with proper PCB copper area (1-inch² 2 oz Cu). This value is derived from its 1.76 W power dissipation rating and 71°C/W thermal resistance under those conditions, not extrapolated from 25°C data.
Does this MOSFET require a gate resistor for typical 200–500 kHz switching?
Yes-a 3.3 Ω gate resistor is specified in the datasheet for timing measurements (tD(ON), tF). For 200–500 kHz operation, a 2.2–4.7 Ω resistor balances switching speed against gate drive overshoot and EMI; values below 2 Ω risk ringing due to low gate resistance (1.57 Ω typical) and PCB inductance.
Can the exposed source pad (Pin 6) be left floating?
No. Pin 6 is electrically and thermally connected to the internal source node and must be soldered to a minimum 1-inch² copper pour. Leaving it unconnected degrades RθJA from 71°C/W to ~157°C/W, causing premature thermal shutdown or parametric drift above 2 A load.
Is the body diode suitable for reverse recovery in synchronous rectification?
Yes-the body diode has characterized tRR = 21.1 ns and QRR = 11.9 nC at IF = 6 A / di/dt = 100 A/µs, making it viable for synchronous rectification in medium-frequency (≤300 kHz) topologies where controlled reverse recovery minimizes shoot-through risk.
DMT6017LFDF-13 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Diodes Incorporated
- Series:
- -
- Package/Case:
- 6-UDFN Exposed Pad
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 65 V
- Current - Continuous Drain (Id) @ 25°C:
- 8.1A (Ta)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 18mOhm @ 6A, 10V
- Vgs(th) (Max) @ Id:
- 2.3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 15.3 nC @ 10 V
- Vgs (Max):
- ±16V
- Input Capacitance (Ciss) (Max) @ Vds:
- 891 pF @ 30 V
- FET Feature:
- -
- Power Dissipation (Max):
- 800mW (Ta)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- U-DFN2020-6 (Type F)
DMT6017LFDF-13 FAQ
1.How can I place an order for DMT6017LFDF-13 through Aetrix?
Please submit a Request for Quotation (RFQ) for DMT6017LFDF-13 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for DMT6017LFDF-13 reliable?
The price and inventory of DMT6017LFDF-13 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMT6017LFDF-13 is usually 5 days.
3.What payment methods are accepted for DMT6017LFDF-13?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMT6017LFDF-13 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for DMT6017LFDF-13?
DMT6017LFDF-13 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your DMT6017LFDF-13 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for DMT6017LFDF-13?
For technical support, including DMT6017LFDF-13 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMT6017LFDF-13 requirements.
6.How does Aetrix verify that DMT6017LFDF-13 is sourced from the original manufacturer or authorized distributors?
All DMT6017LFDF-13 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMT6017LFDF-13 meets industry standards.
7.What is the process for return or replacement of DMT6017LFDF-13?
All DMT6017LFDF-13 units undergo pre-shipment inspection (PSI). If there is an issue with DMT6017LFDF-13, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The DMT6017LFDF-13 part is unused and in its original packaging.
Return procedure for DMT6017LFDF-13:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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