Diodes Incorporated DMT6017LFDF-7

Overview

DMT6017LFDF-7 from Diodes Incorporated is a 65V N-channel enhancement-mode MOSFET in U-DFN2020-6 (Type F) package, optimized for high-efficiency power switching with 18 mΩ R_DS(ON) @ V_GS = 10 V, 8.1 A continuous drain current at +25°C, and ESD-protected gate. It serves as a primary synchronous rectifier or main switch in compact DC-DC converters and wireless charging transmitters.

For engineers reviewing the DMT6017LFDF-7 datasheet, DMT6017LFDF-7 pinout, DMT6017LFDF-7 application, or DMT6017LFDF-7 equivalent, key selection criteria include low-profile thermal performance (0.6 mm height), 100% production-tested UIS robustness, and compatibility with 4.5 V logic-level drive in space-constrained power stages.

Technical Context

This MOSFET employs a trench-gate silicon process to achieve low R_DS(ON) while maintaining fast switching dynamics: t_D(ON) = 4.0 ns, t_F = 3.3 ns, and Q_gd = 3.1 nC at V_DS = 30 V. Its body diode exhibits t_RR = 21.1 ns and Q_RR = 11.9 nC under 100 A/µs di/dt, supporting efficient synchronous rectification.

The device features an integrated gate protection diode and NiPdAu-plated terminals for reliable solderability. Thermal design is enabled by R_θJA = 71 °C/W on 1-inch² copper and R_θJC = 10 °C/W, allowing operation up to +150°C junction temperature with controlled power dissipation.

Key Specifications

Pinout & Package

U-DFN2020-6 (Type F) is a 6-terminal, bottom-exposed thermal pad package with 0.65 mm pitch. Pin 1 is marked by a laser-etched "e4" symbol on the bottom view. The exposed pad enhances thermal transfer to PCB copper.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel MOSFET applications.

Compared with DMT6017LFDF-7, DMN6017LFG-7 trades thermal performance for legacy package compatibility, while DMT6004LK3-13 prioritizes R_DS(ON) over switching speed-making DMT6017LFDF-7 optimal for space- and efficiency-critical 48 V-class SMPS.

Availability

DMT6017LFDF-7 is available at Aetrix Electronics and suitable for USB-C PD adapters, Qi wireless charging transmitters, industrial DC-DC buck converters, and smart home IoT power supplies requiring stable component supply across multi-year production cycles.

Supply support for DMT6017LFDF-7 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design and manufacturing operations across Asia and the Americas.

This part belongs to Diodes' PowerMOS™ portfolio, engineered specifically for high-efficiency, high-density power conversion in consumer, industrial, and computing applications where low R_DS(ON), fast switching, and compact packaging are essential.

FAQ

What is the maximum recommended gate drive voltage for DMT6017LFDF-7?

The absolute maximum gate-source voltage is ±16 V, but the device is characterized and optimized for operation at V_GS = 10 V for lowest R_DS(ON). Driving above 12 V provides diminishing returns in on-resistance reduction while increasing gate oxide stress risk. For logic-level compatibility, it fully turns on at V_GS = 4.5 V with R_DS(ON) = 23 mΩ.

Does DMT6017LFDF-7 require an external gate resistor in typical applications?

Yes-a 3.3 Ω gate resistor is used in the datasheet's switching time test conditions to control dV/dt and prevent ringing. In practice, values between 2.2 Ω and 10 Ω are common: lower values improve switching speed but increase EMI and gate driver stress; higher values reduce EMI but raise switching losses. Layout-dependent parasitic inductance must be minimized regardless.

How is the thermal pad of the U-DFN2020-6 package connected electrically?

The exposed thermal pad is internally connected to the Drain terminal. It must be soldered to a dedicated PCB copper pour tied to the high-side DC node-not to ground-to maintain electrical isolation and avoid short circuits. Minimum recommended pad size is 1.05 × 1.25 mm per datasheet Figure 6.

Can DMT6017LFDF-7 be used in linear (analog) regulation mode?

No-it is not rated or characterized for linear operation. Its Safe Operating Area (SOA) curve shows limited DC capability: at V_DS = 10 V, maximum continuous current drops to ~1.5 A due to thermal limits. Linear use risks thermal runaway and premature failure; it is intended strictly for switched-mode applications with defined duty cycle and pulse width.