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Diodes Incorporated DMT6017LFV-7
- Part No.:
- DMT6017LFV-7
- Manufacturer:
- Diodes Incorporated
- Category:
- FETs, MOSFETs
- Package:
- 8-PowerVDFN
- Datasheet:
-
DMT6017LFV-7.pdf
- Description:
- MOSFET N-CH 65V 36A POWERDI3333
- Quantity:
- Payment:
- Shipping:
Inventory:1,952
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Product details
Overview
DMT6017LFV-7 from Diodes Incorporated is a 65V N-channel enhancement-mode MOSFET in PowerDI3333-8 package, rated for 36A continuous drain current at TC = +25°C, with RDS(ON) of 20mΩ @ VGS = 10V and 23mΩ @ VGS = 4.5V. It delivers low conduction loss and fast switching for high-efficiency power conversion in motor control and DC-DC converters.
For engineers reviewing the DMT6017LFV-7 datasheet, DMT6017LFV-7 pinout, DMT6017LFV-7 application, or DMT6017LFV-7 equivalent, key selection criteria include its 65V BVDSS rating, thermally optimized PowerDI3333-8 footprint, 100% UIS-tested ruggedness, gate ESD protection, and compatibility with 4.5V logic-level drive in space-constrained power stages.
Technical Context
This MOSFET employs a trench-gate process to achieve low RDS(ON) while maintaining controlled gate charge (Qg = 15.3nC @ VGS = 10V) and fast switching (tD(ON) = 4.0ns, tF = 3.3ns). Its internal body diode supports synchronous rectification and has tRR = 21.1ns and QRR = 11.9nC under IF = 6A, di/dt = 100A/µs conditions.
The device is characterized for operation from –55°C to +150°C junction temperature, with normalized RDS(ON) variation ≤1.8× over that range at VGS = 10V. Thermal resistance RθJC = 3.2°C/W enables high-power dissipation when mounted to a thermal pad, while RθJA = 59°C/W reflects FR-4 board-level performance.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| BVDSS | 65V - Withstands up to 65V drain-source voltage before avalanche breakdown, enabling use in 48V bus systems. |
| RDS(ON) | 20mΩ @ VGS = 10V - Delivers <0.72W conduction loss at 6A, critical for thermal management in compact converters. |
| ID (Cont.) | 36A @ TC = +25°C - Supports high-current power stages when heatsinked; derates to 29A at TC = +70°C. |
| Qg | 15.3nC @ VGS = 10V - Enables efficient gate driving with moderate driver strength; reduces switching loss trade-off. |
| tRR / QRR | 21.1ns / 11.9nC - Low reverse recovery charge minimizes shoot-through risk and EMI in synchronous buck topologies. |
| RθJC | 3.2°C/W - Allows >12W power dissipation with 40°C rise above case, supporting high-density thermal design. |
Pinout & Package
Package: PowerDI3333-8 (Type UX), surface-mount, thermally enhanced with exposed drain pad. Dimensions: 3.30 × 3.30 × 0.80 mm, occupies only 33% board area vs. SO-8.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 3, 4, 5, 6, 7 (Drain) | Power Drain Terminal (parallel-connected) | All seven pins are internally tied to drain; provides low-inductance, high-current path and thermal conduction to PCB copper. |
| 8 (Source) | Source Reference Node | Single-source connection for return path; used with gate to define VGS and control channel conduction. |
| G (Gate) | Control Input | Exposed gate pad on top side (not pin); requires careful layout to minimize ringing; ESD-protected per HBM 2kV. |
Key Features
| Feature | Design Value |
|---|---|
| 100% UIS Tested | Guarantees robustness against unclamped inductive switching events up to IAS = 19A and EAS = 18mJ, reducing failure risk in motor drives. |
| Logic-Level Gate Drive | Specified RDS(ON) down to 23mΩ at VGS = 4.5V, enabling direct interface with 3.3V/5V microcontrollers without level-shifting. |
| Thermally Optimized Package | PowerDI3333-8 achieves RθJC = 3.2°C/W via exposed drain pad, delivering ~12× better thermal performance than SO-8 at same footprint area. |
| Green Construction | Halogen- and antimony-free, fully RoHS-compliant (≤900ppm Br/Cl, ≤1000ppm Sb), meeting strict environmental compliance for industrial and automotive end products. |
Applications
| Motor Control | DC-DC Converters |
|---|---|
Use Scenario: Brushless DC motor half-bridge in power tools and HVAC blowers operating from 24–48V battery or bus supplies. IC Role / Device Role / Timing Role: High-side or low-side switching element in three-phase inverter stage, handling peak currents ≥30A with minimal heat generation. Use Value: Low RDS(ON) and fast turn-off (tF = 3.3ns) reduce conduction and switching losses, extending battery runtime and enabling fanless enclosure designs. | Use Scenario: Synchronous rectifier in 12V-to-5V/3.3V buck converter for FPGA or SoC power rails in networking equipment. IC Role / Device Role / Timing Role: Low-side switch in synchronous buck topology, conducting during freewheeling phase with body diode bypassed by active channel. Use Value: 21.1ns tRR and 11.9nC QRR suppress voltage spikes and cross-conduction, improving efficiency by ≥1.2% at 1MHz switching frequency. |
| Power Management | Load Switching |
Use Scenario: Primary power switch in USB-C PD power delivery modules managing up to 60W load with dynamic voltage negotiation. IC Role / Device Role / Timing Role: Main pass transistor controlling input power path, subjected to hot-swap transients and repetitive inrush current events. Use Value: 100% UIS qualification ensures survival under repeated 140A pulsed drain current (IDM), eliminating need for external TVS clamping. | Use Scenario: Hot-swap controller output stage in server backplane power distribution units. IC Role / Device Role / Timing Role: Load switch isolating downstream 12V rail during insertion/removal, requiring low on-resistance and fast fault response. Use Value: 20mΩ RDS(ON) limits voltage drop to <720mV at 36A, preserving system margin; ESD-protected gate withstands handling without additional protection circuitry. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| DMN6017LFG-7 | Same die, but in leaded SOT-23-6 package; higher RθJA (120°C/W), no exposed drain pad. | Limited to lower-power (<5W) applications due to thermal constraints; unsuitable for 36A continuous operation. | Select only if legacy through-hole or smaller-volume prototyping is required and thermal budget permits. |
| SiHFL024R-GE3 | 60V, 24mΩ @ VGS = 10V, TO-252 package; higher RDS(ON), larger footprint, RθJC = 2.5°C/W. | Better thermal resistance but 3× board area; suited for high-reliability industrial power supplies where size is secondary. | Prefer when long-term thermal stability under sustained 30A load outweighs PCB area constraints. |
Compared with DMT6017LFV-7, DMN6017LFG-7 trades thermal performance for package familiarity, while SiHFL024R-GE3 offers superior junction-to-case cooling at the cost of density-making DMT6017LFV-7 optimal for space-constrained, high-current DC-DC and motor control where both RDS(ON) and footprint matter.
Availability
DMT6017LFV-7 is available at Aetrix Electronics and suitable for motor control, DC-DC converters, and power management applications requiring stable component supply, high-current capability, and thermally efficient packaging.
Supply support for DMT6017LFV-7 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, specializing in high-performance, high-reliability components for power, signal integrity, and protection applications.
The DMT6017LFV belongs to Diodes' Power MOSFET product line, engineered specifically for high-efficiency, high-density power conversion in consumer, industrial, and computing systems where low RDS(ON), fast switching, and small-footprint thermal management are essential.
FAQ
What is the maximum gate-source voltage rating for DMT6017LFV-7?
The absolute maximum gate-source voltage (VGSS) is ±16V. Exceeding this may cause irreversible gate oxide damage. Recommended operating range is –12.8V to +12.8V, with typical drive at 0V (off) and 10V (fully enhanced). The device includes integrated ESD protection rated to 2kV HBM, but external gate resistors and clamping remain advisable in noisy environments.
Does DMT6017LFV-7 support 3.3V logic-level gate drive?
Yes - it is fully specified down to VGS = 4.5V, delivering RDS(ON) ≤23mΩ at ID = 4A. At 3.3V, conduction is partially enhanced (VGS(TH) max = 2.3V), but RDS(ON) rises significantly (>50mΩ); for reliable 3.3V operation, a gate driver with boosted output or logic-level compatible variant (e.g., DMT6017LK) is recommended.
How is thermal performance validated for the PowerDI3333-8 package?
Thermal resistance values are measured per JEDEC JESD51 standards: RθJC = 3.2°C/W is determined from junction to solder point on the exposed drain pad using a cold plate fixture; RθJA = 59°C/W is measured on 2oz FR-4 board with 1-inch² copper thermal bias. Transient thermal data (Figure 13) confirms single-pulse capability up to 39W for <100µs durations.
Is DMT6017LFV-7 suitable for automotive applications?
While not AEC-Q101 qualified, DMT6017LFV-7 meets key automotive stress requirements: operating TJ range (–55°C to +150°C), 100% UIS testing, and green/halogen-free construction. It is commonly used in non-safety-critical automotive subsystems (e.g., seat motors, HVAC fans), but formal qualification is required for ADAS or powertrain applications.
DMT6017LFV-7 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Diodes Incorporated
- Series:
- -
- Package/Case:
- 8-PowerVDFN
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 65 V
- Current - Continuous Drain (Id) @ 25°C:
- 36A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 20mOhm @ 6A, 10V
- Vgs(th) (Max) @ Id:
- 2.3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 15.3 nC @ 10 V
- Vgs (Max):
- ±16V
- Input Capacitance (Ciss) (Max) @ Vds:
- 891 pF @ 30 V
- FET Feature:
- -
- Power Dissipation (Max):
- 2.12W (Ta), 39.06W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- PowerDI3333-8 (Type UX)
DMT6017LFV-7 FAQ
1.How can I place an order for DMT6017LFV-7 through Aetrix?
Please submit a Request for Quotation (RFQ) for DMT6017LFV-7 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for DMT6017LFV-7 reliable?
The price and inventory of DMT6017LFV-7 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMT6017LFV-7 is usually 5 days.
3.What payment methods are accepted for DMT6017LFV-7?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMT6017LFV-7 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for DMT6017LFV-7?
DMT6017LFV-7 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your DMT6017LFV-7 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for DMT6017LFV-7?
For technical support, including DMT6017LFV-7 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMT6017LFV-7 requirements.
6.How does Aetrix verify that DMT6017LFV-7 is sourced from the original manufacturer or authorized distributors?
All DMT6017LFV-7 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMT6017LFV-7 meets industry standards.
7.What is the process for return or replacement of DMT6017LFV-7?
All DMT6017LFV-7 units undergo pre-shipment inspection (PSI). If there is an issue with DMT6017LFV-7, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The DMT6017LFV-7 part is unused and in its original packaging.
Return procedure for DMT6017LFV-7:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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