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Diodes Incorporated DMT6018LDR-13
- Part No.:
- DMT6018LDR-13
- Manufacturer:
- Diodes Incorporated
- Category:
- FET, MOSFET Arrays
- Package:
- 8-PowerVDFN
- Datasheet:
-
DMT6018LDR-13.pdf
- Description:
- MOSFET 2N-CH 60V 8.8A 8VDFN
- Quantity:
- Payment:
- Shipping:
Inventory:17,780
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Product details
Overview
DMT6018LDR-13 from Diodes Incorporated is a dual N-channel enhancement-mode MOSFET in a V-DFN3030-8 (Type H) package, rated for 60V VDSS, 17mΩ RDS(ON) @ 10VGS, and 8.8A continuous drain current at +25°C. It serves as a high-efficiency synchronous rectifier or load switch in DC-DC converters and battery-powered systems.
For engineers reviewing the DMT6018LDR-13 datasheet, DMT6018LDR-13 pinout, DMT6018LDR-13 application, or DMT6018LDR-13 equivalent, key selection criteria include dual-channel RDS(ON) matching, low gate charge (Qg = 13.9nC @ 10V), thermal resistance (RθJA = 66°C/W with 1-inch2 copper), and V-DFN3030-8 footprint compatibility.
Technical Context
This dual MOSFET integrates two matched N-channel silicon devices sharing a common source configuration per channel (S1/S2), enabling independent gate control (G1/G2) and separate drain paths (D1/D2). Its design emphasizes low conduction loss and fast switching-evidenced by tR = 4.6ns and Qgd = 1.9nC-while maintaining robust avalanche capability (EAS = 32mJ).
The device operates across –55°C to +150°C junction temperature, with gate threshold voltage VGS(TH) specified from 1.0V to 3.0V and body diode forward voltage VSD = 0.75V @ 1A. Its low Ciss (869pF) and Crss (15pF) support high-frequency PWM operation up to several MHz in compact power stages.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 60V - supports 48V bus and 24V industrial input rails without derating |
| RDS(ON) @ 10VGS | 17mΩ max - enables ≤1.2W conduction loss at 8.8A in each channel |
| RDS(ON) @ 4.5VGS | 26mΩ max - ensures usable on-resistance with 3.3V logic-level gate drive |
| Qg @ 10V | 13.9nC - reduces gate driver power demand and switching transition time |
| RθJA (1″² Cu) | 66°C/W - allows 1.9W steady-state dissipation at +70°C ambient with minimal heatsinking |
| EAS | 32mJ - withstands single-pulse inductive energy in motor or solenoid drive circuits |
| tR/tF | 4.6ns / 3.5ns - minimizes overlap loss in synchronous buck topologies |
Pinout & Package
V-DFN3030-8 (Type H) is an 8-pin, 3.0×3.0mm leadless surface-mount package with exposed thermal pad (pin 5), optimized for low-inductance layout and high thermal transfer to PCB copper. Pin 1 is marked by chamfered corner; terminals are NiPdAu-plated for reliable solderability.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 3, 4 | Source 1 (S1) | Common source node for first MOSFET channel; electrically tied internally |
| 5 | Thermal Pad / Exposed Drain | Internally connected to both drains (D1 & D2); must be soldered to PCB ground plane for thermal and electrical performance |
| 6 | Gate 1 (G1) | Controls turn-on/turn-off of first N-channel MOSFET (D1–S1 path) |
| 7 | Drain 1 (D1) | High-side or low-side power path terminal for Channel 1 |
| 8 | Gate 2 (G2) | Independent control input for second N-channel MOSFET (D2–S2 path) |
| - | Drain 2 (D2) | Second independent power path terminal; shares thermal pad (pin 5) with D1 |
Key Features
| Feature | Design Value |
|---|---|
| Dual matched N-channel topology | Enables space-efficient half-bridge or dual-phase synchronous rectification without discrete pairing |
| Low RDS(ON) @ 4.5VGS | 26mΩ ensures <1.8W loss per channel at 6.9A with standard logic-level drivers |
| Ultra-low Crss (15pF) | Minimizes Miller-induced shoot-through risk and improves gate drive stability in high-dV/dt environments |
| Green, halogen-free construction | Complies with IPC-1752A material declaration requirements and EU RoHS 2011/65/EU |
| JEDEC Level 1 moisture sensitivity | Allows unlimited floor life before reflow; no baking required prior to assembly |
Applications
| USB-C Power Delivery Switch | Industrial 24V DC-DC Converter |
|---|---|
Use Scenario: Bidirectional 20V/3A power path switching in USB-C PD 3.0 sink applications. IC Role / Device Role / Timing Role: Dual-channel load switch controlling VBUS routing and reverse-current blocking. Use Value: Low RDS(ON) limits voltage drop to <60mV at 3A; matched channels ensure balanced thermal distribution during hot-swap events. | Use Scenario: Synchronous rectification in isolated 24V-to-5V flyback converter for PLC I/O modules. IC Role / Device Role / Timing Role: Secondary-side dual N-MOSFET rectifier replacing Schottky diodes to improve efficiency. Use Value: 17mΩ RDS(ON) cuts conduction loss by >40% vs. 40V Schottky; fast tF (3.5ns) suppresses ringing at 300kHz switching frequency. |
| Battery Protection Circuit | Automotive Body Control Module |
Use Scenario: Dual-cell Li-ion pack protection with overcurrent and short-circuit cutoff. IC Role / Device Role / Timing Role: Back-to-back configured N-MOSFET pair for bidirectional current blocking and discharge control. Use Value: Matched RDS(ON) ensures symmetrical trip thresholds; 60V rating accommodates 16S battery transients up to 58V. | Use Scenario: High-side power switching for LED lighting and solenoid actuation in 12V vehicle subsystems. IC Role / Device Role / Timing Role: Dual independent high-side switches driving parallel loads (e.g., headlight + fog lamp). Use Value: Independent G1/G2 control enables staggered turn-on to limit inrush; EAS = 32mJ handles inductive kickback from 200mA solenoids. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar dual N-channel MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| DMN6016LFD-13 | Single-channel, same VDSS/RDS(ON), but smaller V-DFN2020-6 package (2.0×2.0mm) | Requires two devices for dual functionality; higher board area and layout complexity | Preferred when space constraints outweigh integration benefits and thermal coupling is not required |
| SI6926ADQ-T1-GE3 | 60V dual N-MOSFET, but RDS(ON) = 22mΩ @ 10V and Qg = 17.5nC - higher conduction and switching loss | Limited to lower-frequency (<200kHz) applications due to slower tR/tF (10ns/8ns) | Acceptable where cost sensitivity outweighs efficiency targets and thermal margin is ample |
Compared with DMT6018LDR-13, DMN6016LFD-13 increases component count and layout effort but saves ~30% board area per channel, while SI6926ADQ-T1-GE3 trades 30% higher switching loss and reduced frequency headroom for broader distributor availability and longer production lifecycle.
Availability
DMT6018LDR-13 is available at Aetrix Electronics and suitable for USB-C power delivery systems, industrial DC-DC converters, and battery protection circuits requiring stable component supply, consistent parametric performance, and long-term manufacturability.
Supply support for DMT6018LDR-13 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, specializing in high-reliability power management, signal integrity, and protection solutions for industrial, computing, and consumer markets.
The DMT6018LDR belongs to Diodes' advanced TrenchMOS™ dual-FET product line, engineered specifically for high-density, high-efficiency power conversion where dual-channel integration, low RDS(ON), and fast switching reduce system size and thermal overhead.
FAQ
What is the maximum continuous drain current per channel at +70°C ambient?
The DMT6018LDR-13 supports 7.1A continuous drain current per channel at +70°C ambient when mounted on FR-4 with minimum recommended pad layout (Note 6 in datasheet). This rating assumes steady-state operation with proper PCB copper area and accounts for thermal derating beyond +25°C ambient.
Can the thermal pad (pin 5) be left unconnected?
No. Pin 5 is the exposed thermal pad, internally connected to both drains (D1 and D2). Leaving it unconnected severely degrades thermal performance and violates JEDEC mounting requirements. It must be soldered to a dedicated PCB copper pour tied to system ground for safe operation and reliability.
Is the DMT6018LDR-13 suitable for automotive AEC-Q101 qualification?
No. The DMT6018LDR-13 is not AEC-Q101 qualified. It is rated for industrial temperature range (–55°C to +150°C) but lacks automotive-specific stress testing, failure analysis reporting, and PPAP documentation. For automotive applications, Diodes offers the AEC-Q101-qualified DMT6018LDR-A variant.
How does the dual-channel structure affect gate drive requirements?
Each channel has independent gate terminals (G1 and G2), requiring separate gate drive signals. Total gate charge is additive per channel (Qg = 13.9nC per channel @ 10V), so driving both simultaneously demands twice the gate driver peak current versus a single MOSFET. Layout must minimize shared gate loop inductance to prevent cross-talk.
DMT6018LDR-13 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Diodes Incorporated
- Series:
- -
- Package/Case:
- 8-PowerVDFN
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Technology:
- MOSFET (Metal Oxide)
- Configuration:
- 2 N-Channel (Dual)
- FET Feature:
- -
- Drain to Source Voltage (Vdss):
- 60V
- Current - Continuous Drain (Id) @ 25°C:
- 8.8A (Ta)
- Rds On (Max) @ Id, Vgs:
- 17mOhm @ 8.2A, 10V
- Vgs(th) (Max) @ Id:
- 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 13.9nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds:
- 869pF @ 30V
- Power - Max:
- 1.9W
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- V-DFN3030-8
DMT6018LDR-13 FAQ
1.How can I place an order for DMT6018LDR-13 through Aetrix?
Please submit a Request for Quotation (RFQ) for DMT6018LDR-13 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for DMT6018LDR-13 reliable?
The price and inventory of DMT6018LDR-13 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMT6018LDR-13 is usually 5 days.
3.What payment methods are accepted for DMT6018LDR-13?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMT6018LDR-13 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for DMT6018LDR-13?
DMT6018LDR-13 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your DMT6018LDR-13 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for DMT6018LDR-13?
For technical support, including DMT6018LDR-13 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMT6018LDR-13 requirements.
6.How does Aetrix verify that DMT6018LDR-13 is sourced from the original manufacturer or authorized distributors?
All DMT6018LDR-13 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMT6018LDR-13 meets industry standards.
7.What is the process for return or replacement of DMT6018LDR-13?
All DMT6018LDR-13 units undergo pre-shipment inspection (PSI). If there is an issue with DMT6018LDR-13, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The DMT6018LDR-13 part is unused and in its original packaging.
Return procedure for DMT6018LDR-13:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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