Diodes Incorporated DMT6018LDR-7

Overview

DMT6018LDR-7 from Diodes Incorporated is a dual N-channel enhancement-mode MOSFET in a V-DFN3030-8 (Type H) package, rated for 60V V_DSS, 17 mΩ R_DS(ON) @ 10V_GS, and 8.8A continuous drain current at +25°C. It serves as a high-efficiency synchronous rectifier or load switch in compact DC-DC converters and battery-powered systems.

For engineers reviewing the DMT6018LDR-7 datasheet, DMT6018LDR-7 pinout, DMT6018LDR-7 application, or DMT6018LDR-7 equivalent, key selection criteria include dual-channel R_DS(ON) matching at 4.5V/10V gate drive, low Q_g (6.2 nC @ 4.5V), fast switching (t_r = 4.6 ns), thermal resistance (R_θJA = 66 °C/W with copper pad), and RoHS-compliant "Green" construction.

Technical Context

This dual MOSFET integrates two matched N-channel silicon devices in a single 3.0 × 3.0 mm thermally enhanced DFN package. Each channel features independent gate, source, and drain terminals with shared thermal path to the exposed drain pad - enabling synchronous buck topologies where both high-side and low-side switching are required in minimal board area.

The device employs trench-gate technology to achieve low R_DS(ON) while maintaining tight V_GS(th) distribution (1.0–3.0 V) and low C_iss (869 pF), supporting PWM frequencies up to 2 MHz in point-of-load regulators without excessive gate drive loss.

Key Specifications

Pinout & Package

V-DFN3030-8 (Type H) is a 3.0 mm × 3.0 mm × 0.8 mm leadless surface-mount package with an exposed drain thermal pad on the bottom and eight perimeter terminals. The package uses NiPdAu-plated copper leadframe and meets UL 94V-0 flammability rating.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar dual N-channel MOSFET applications.

Compared with DMN6018LFD-7, DMT6018LDR-7 delivers 40% lower thermal resistance for same power; versus SIZ250DT-T1-GE3, it trades 26% higher R_DS(ON) for 50% lower gate charge and 30% smaller footprint - favoring high-frequency, space-constrained designs.

Availability

DMT6018LDR-7 is available at Aetrix Electronics and suitable for USB-C power adapters, industrial IoT sensor nodes, and automotive body control modules requiring stable component supply, long-term lifecycle support, and RoHS-compliant "Green" manufacturing.

Supply support for DMT6018LDR-7 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design centers across Asia and manufacturing in China, Taiwan, and the U.S.

The DMT6018LDR-7 belongs to Diodes' "PowerMOS™" product line, engineered specifically for high-density power conversion and intelligent load switching in consumer, industrial, and automotive applications where thermal performance and gate-drive compatibility are critical.

FAQ

What is the maximum safe operating junction temperature for DMT6018LDR-7?

The absolute maximum junction temperature is +150°C, and the device is characterized for continuous operation across –55°C to +150°C. Thermal derating begins at +70°C ambient under standard FR-4 mounting (1-inch² copper), where continuous drain current drops from 8.8A to 7.1A and power dissipation from 1.9W to 1.2W.

Can DMT6018LDR-7 be used in a high-side switch configuration?

Yes - each channel operates as a standard N-channel MOSFET and can be used in high-side configuration when paired with a gate driver capable of providing V_GS ≥ 10V above the source potential. The device does not integrate bootstrap circuitry or level-shifting, so external gate-driving support is required for high-side use.

Is the exposed thermal pad electrically isolated or connected internally?

The exposed pad is internally connected to the drain terminals of both MOSFETs (D1 and D2). It must be soldered to a PCB copper pour tied to the system's high-current drain return path - not left floating or connected to source or gate nets - to ensure proper thermal conduction and avoid short circuits.

Does DMT6018LDR-7 support avalanche energy rating, and what is its value?

Yes - the device is rated for unclamped inductive switching with I_AS = 8A and E_AS = 32 mJ (L = 1 mH, T_J = +25°C). This rating applies only to single-pulse conditions and assumes proper PCB layout with minimized loop inductance; repetitive avalanche operation is not guaranteed.