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Diodes Incorporated DMT6030LFDF-13
- Part No.:
- DMT6030LFDF-13
- Manufacturer:
- Diodes Incorporated
- Category:
- FETs, MOSFETs
- Package:
- 6-UDFN Exposed Pad
- Datasheet:
-
DMT6030LFDF-13.pdf
- Description:
- MOSFET N-CH 60V 6.8A 6UDFN
- Quantity:
- Payment:
- Shipping:
Inventory:4,277
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Product details
Overview
DMT6030LFDF-13 from Diodes Incorporated is a 60V N-channel enhancement-mode MOSFET in U-DFN2020-6 (Type F) package, featuring 25.5mΩ RDS(ON) @ VGS = 10V, 6.8A continuous drain current at TA = +25°C, and 0.6mm profile-designed for high-efficiency load switching in notebook PC power rails and USB-C adapter circuits.
For engineers reviewing the DMT6030LFDF-13 datasheet, DMT6030LFDF-13 pinout, DMT6030LFDF-13 application, or DMT6030LFDF-13 equivalent, key selection criteria include low-profile thermal performance (RθJA = 71°C/W with copper plate), 100% production-tested UIS robustness, and verified 4.5V gate drive capability for battery-powered systems.
Technical Context
This MOSFET employs trench-gate silicon process technology to achieve low RDS(ON) while maintaining fast switching dynamics: tD(ON) = 2.6ns, tD(OFF) = 10.7ns, and QG = 9.1nC @ 10V. Its body diode exhibits tRR = 26.5ns and QRR = 12.3nC under 10A/100A/μs conditions.
The device is characterized for operation across –55°C to +150°C junction temperature range, with VGS(TH) tightly specified (1–2.5V), and gate leakage limited to ±100nA at ±20V-enabling stable control in low-power enable paths and always-on subsystems.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 60V - Supports 48V system rails with 20% margin against transients |
| RDS(ON) | 25.5mΩ @ 10V - Enables <150mW conduction loss at 6.8A DC load |
| ID (max) | 6.8A @ 25°C - Sustains full-rated current in compact PCB layouts with 1-in² copper |
| QG | 9.1nC @ 10V - Allows efficient 1MHz switching with <1W gate driver power |
| RθJC | 13°C/W - Enables direct thermal coupling to heatsink or ground plane for >9W dissipation |
| tRR | 26.5ns - Minimizes reverse recovery loss in synchronous buck and OR-ing configurations |
Pinout & Package
U-DFN2020-6 (Type F) package: 2.0mm × 2.0mm footprint, 0.6mm height, NiPdAu-plated copper leadframe, moisture sensitivity level 1, UL 94V-0 molding compound.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Pin 1 (Top View) | Source | Primary return path; internally connected to exposed thermal pad for low-inductance grounding |
| Pin 2 | Gate | Control input; requires ≤2.5V threshold for reliable turn-on with 3.3V logic |
| Pin 3 | Drain | High-side switch node; connects to input rail or inductor output in buck topology |
| Pin 4 | Source | Redundant source connection; improves current sharing and thermal spreading |
| Pin 5 | Drain | Secondary drain connection; reduces package inductance in high-di/dt applications |
| Pin 6 | Drain | Third drain terminal; enhances current capacity and thermal conduction from die to PCB |
Key Features
| Feature | Design Value |
|---|---|
| 100% UIS tested | Guarantees avalanche energy handling (EAS = 10.8mJ) without derating in unclamped inductive loads |
| 0.6mm profile | Enables integration into ultra-thin consumer devices where Z-height is constrained to <0.7mm |
| 4mm² PCB footprint | Reduces board area by 40% vs. SO-8 while maintaining comparable thermal performance |
| Lead-free & Green | Complies with RoHS 3, halogen-free (<900ppm Br+Cl), and antimony-free requirements for global compliance |
Applications
| USB-C Power Delivery Adapter | Notebook PC System Power Rail |
|---|---|
|
Use Scenario: High-efficiency 20V/3A output stage in compact travel adapters with active clamp flyback topology. IC Role / Device Role / Timing Role: Primary-side synchronous rectifier switch replacing Schottky diode to reduce conduction loss. Use Value: Achieves >94% efficiency at full load by cutting RDS(ON)-dominated losses by 65% versus 40mΩ alternatives. |
Use Scenario: Always-on 3.3V standby rail enabling instant wake-from-sleep in ultrabooks. IC Role / Device Role / Timing Role: Low-quiescent-load load switch controlling power to RTC and memory retention circuitry. Use Value: Delivers <1µA off-state leakage (IDSS ≤ 1µA) and 2.5V gate threshold compatible with 3.3V GPIO control. |
| Industrial IoT Sensor Node | Portable Medical Monitor Battery Path |
|
Use Scenario: Dual-rail power management in battery-powered edge nodes with isolated 5V and 3.3V domains. IC Role / Device Role / Timing Role: Back-to-back MOSFET configuration for bidirectional battery protection and reverse polarity blocking. Use Value: Leverages symmetric 60V rating and matched RDS(ON) to eliminate need for external TVS or diode stacks. |
Use Scenario: Smart battery path controller managing Li-ion charging and system load during hot-swap events. IC Role / Device Role / Timing Role: High-side main power switch with integrated body diode used for OR-ing and load dump protection. Use Value: Body diode VSD = 0.7V ensures <100mW forward drop at 150mA sleep current, extending battery runtime. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel load switch applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| DMN3029LFG-7 | RDS(ON) = 29mΩ @ 4.5V; same U-DFN2020-6 package; higher gate charge (11.5nC) | Slightly lower efficiency at 4.5V drive; better suited for fixed 5V gate drive systems | Select when gate drive voltage is stable ≥5V and cost sensitivity outweighs 15% RDS(ON) penalty |
| AO3400 | RDS(ON) = 28mΩ @ 10V; SOT-23 package; RθJA = 200°C/W; no UIS rating | Higher thermal resistance limits continuous current to 3.2A; unsuitable for sustained 6A loads | Choose only for space-constrained prototypes where 2.0×2.0mm footprint is unavailable and peak current <4A |
Compared with DMT6030LFDF-13, DMN3029LFG-7 trades marginal RDS(ON) increase for broader gate drive compatibility, while AO3400 sacrifices thermal capability and ruggedness for legacy package availability-making DMT6030LFDF-13 optimal for thermally demanding, low-profile, high-reliability load switches.
Availability
DMT6030LFDF-13 is available at Aetrix Electronics and suitable for USB-C PD adapters, notebook PC power rails, industrial IoT sensor nodes, and portable medical monitor battery paths requiring stable component supply, consistent parametric performance, and long-term lifecycle support.
Supply support for DMT6030LFDF-13 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design centers across Asia and manufacturing in China, Taiwan, and the US.
This MOSFET belongs to Diodes' "PowerMOS" product line, engineered specifically for high-density, high-efficiency power conversion in portable and battery-operated equipment where thermal and spatial constraints dominate design decisions.
FAQ
What is the maximum continuous drain current at 70°C ambient?
The DMT6030LFDF-13 supports 5.4A continuous drain current at TA = +70°C with standard FR-4 PCB and 1-inch square copper plate (Note 6). This derating reflects thermal resistance of 71°C/W and maximum junction temperature of 150°C, ensuring safe operation in enclosed notebook chassis environments.
Is the exposed thermal pad electrically connected, and how should it be routed?
Yes-the exposed pad is internally connected to the Source terminals (Pins 1, 4). It must be soldered to a solid copper pour tied directly to the system ground plane. Minimum recommended pad area is 1.0mm × 1.0mm with ≥4 thermal vias (0.3mm diameter) to inner ground layers to achieve RθJA = 71°C/W.
Does this MOSFET support 3.3V logic-level gate drive?
No-it is not a true logic-level device. VGS(TH) ranges from 1.0V to 2.5V, but RDS(ON) rises sharply below 4.5V: 35mΩ @ 4.5V vs. 25.5mΩ @ 10V. For reliable 3.3V drive, a gate driver or level shifter is required to ensure sufficient overdrive and minimize conduction loss.
What does "100% UIS tested" mean for real-world reliability?
Every unit undergoes unclamped inductive switching stress test at IAS = 14.7A and L = 0.1mH, verifying single-pulse avalanche capability per JEDEC JESD22-A116. This ensures robustness against inductive kickback in relay drivers, motor H-bridges, and hot-swap circuits without requiring external snubbers or clamps.
DMT6030LFDF-13 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Diodes Incorporated
- Series:
- -
- Package/Case:
- 6-UDFN Exposed Pad
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 60 V
- Current - Continuous Drain (Id) @ 25°C:
- 6.8A (Ta)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 25.5mOhm @ 6.5A, 10V
- Vgs(th) (Max) @ Id:
- 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 9.1 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 639 pF @ 30 V
- FET Feature:
- -
- Power Dissipation (Max):
- 860mW (Ta), 9.62W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- U-DFN2020-6 (Type F)
DMT6030LFDF-13 FAQ
1.How can I place an order for DMT6030LFDF-13 through Aetrix?
Please submit a Request for Quotation (RFQ) for DMT6030LFDF-13 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for DMT6030LFDF-13 reliable?
The price and inventory of DMT6030LFDF-13 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMT6030LFDF-13 is usually 5 days.
3.What payment methods are accepted for DMT6030LFDF-13?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMT6030LFDF-13 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for DMT6030LFDF-13?
DMT6030LFDF-13 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your DMT6030LFDF-13 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for DMT6030LFDF-13?
For technical support, including DMT6030LFDF-13 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMT6030LFDF-13 requirements.
6.How does Aetrix verify that DMT6030LFDF-13 is sourced from the original manufacturer or authorized distributors?
All DMT6030LFDF-13 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMT6030LFDF-13 meets industry standards.
7.What is the process for return or replacement of DMT6030LFDF-13?
All DMT6030LFDF-13 units undergo pre-shipment inspection (PSI). If there is an issue with DMT6030LFDF-13, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The DMT6030LFDF-13 part is unused and in its original packaging.
Return procedure for DMT6030LFDF-13:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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