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Diodes Incorporated DMT615MLFV-13
- Part No.:
- DMT615MLFV-13
- Manufacturer:
- Diodes Incorporated
- Category:
- FETs, MOSFETs
- Package:
- 8-PowerVDFN
- Datasheet:
-
DMT615MLFV-13.pdf
- Description:
- MOSFET N-CH 60V PWRDI3333
- Quantity:
- Payment:
- Shipping:
Inventory:7,361
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Product details
Overview
DMT615MLFV-13 from Diodes Incorporated is a 60V N-channel enhancement-mode MOSFET in PowerDI3333-8 (Type UX) package, delivering 38A continuous drain current at TC = +25°C, 16mΩ RDS(ON) @ VGS = 10V, and 100% production-tested UIS robustness - deployed in motor control, DC-DC converters, and high-density power management systems.
For engineers reviewing the DMT615MLFV-13 datasheet, DMT615MLFV-13 pinout, DMT615MLFV-13 application, or DMT615MLFV-13 equivalent, key selection criteria include thermal resistance (RθJC = 3.6°C/W), gate charge (QG = 15.5nC @ VGS = 10V), body diode recovery (tRR = 20.6ns), and SOA-limited pulsed capability under 1ms–10s pulse widths.
Technical Context
This MOSFET employs planar trench-gate silicon technology optimized for low conduction loss and fast switching trade-off. Its 3.3mm × 3.3mm exposed-drain PowerDI3333-8 package enables direct thermal coupling to PCB copper, supporting 34.72W dissipation at TC = +25°C with RθJC = 3.6°C/W.
The device features ESD-protected gate (±10µA IGSS max), 19A avalanche current rating (IAS), and 18.05mJ single-pulse avalanche energy (EAS) - validated per JESD22-A115. Gate threshold voltage (1–3V) ensures compatibility with 3.3V/5V logic-level drive while maintaining noise immunity.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 60V - supports 48V bus systems with 20% margin against transients |
| RDS(ON) | 16mΩ @ VGS = 10V - yields ≤6.1W conduction loss at 38A ID |
| ID (continuous) | 38A @ TC = +25°C - requires heatsinking or copper pour for sustained operation |
| QG | 15.5nC @ VGS = 10V - determines gate driver current requirement (~1.55A peak for 10ns rise) |
| tRR | 20.6ns - minimizes reverse recovery loss in synchronous rectification |
| RθJC | 3.6°C/W - enables direct thermal path to PCB ground plane for high-power density layout |
| EAS | 18.05mJ - withstands inductive turn-off stress without failure in motor drive H-bridge legs |
Pinout & Package
Package: PowerDI3333-8 (Type UX), surface-mount, thermally enhanced with exposed drain pad. Dimensions: 3.3mm × 3.3mm × 0.8mm; moisture sensitivity level 1 (J-STD-020).
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (S) | Source | Common return node for load current; tied to internal source metallization and adjacent S pins |
| 2 (S) | Source | Parallel source connection for reduced parasitic inductance in high-di/dt switching |
| 3 (S) | Source | Third source terminal enabling low-inductance Kelvin sensing or current sharing |
| 4 (G) | Gate | Control input with ESD protection; requires <10Ω series resistance to damp ringing |
| 5 (D) | Drain | Main power output node; connected to exposed copper pad on bottom for thermal conduction |
| 6 (D) | Drain | Second drain terminal sharing same internal die connection as Pin 5 |
| 7 (D) | Drain | Third drain terminal for distributed current handling and reduced bond wire inductance |
| 8 (D) | Drain | Fourth drain terminal completing symmetric drain layout for balanced current distribution |
Key Features
| Feature | Design Value |
|---|---|
| 100% UIS production test | Guarantees avalanche ruggedness in real-world inductive switching without derating |
| PowerDI3333-8 footprint | Reduces board area by 67% vs SO-8, enabling compact multi-phase buck converter designs |
| Low QGD/QG ratio | 3.5nC/15.5nC = 0.23 - improves Miller immunity and reduces switching loss during hard commutation |
| Normalized RDS(ON) stability | ≤1.25× increase from –55°C to +150°C - maintains predictable conduction loss across industrial temp range |
| Halogen & antimony free | <900ppm Br, <900ppm Cl, <1000ppm Sb - meets IPC-1752a Class 3 environmental compliance |
Applications
| Motor Control | DC-DC Converters |
|---|---|
Use Scenario: Brushless DC motor half-bridge leg in power tools and HVAC blowers operating at 20–50kHz PWM frequency. IC Role / Device Role / Timing Role: High-side and low-side switching element managing bidirectional current flow and regenerative braking energy. Use Value: Low RDS(ON) and fast tF = 5ns minimize conduction and switching losses, extending battery runtime by ≥8% versus SO-8 alternatives. | Use Scenario: Synchronous rectifier in 12V-to-1V point-of-load (POL) converters for server CPU VRMs. IC Role / Device Role / Timing Role: Secondary-side switch replacing Schottky diode to reduce forward voltage drop and improve efficiency at high current (>30A). Use Value: 0.7V VSD body diode and 20.6ns tRR enable clean zero-voltage switching transitions, cutting diode conduction loss by 42%. |
| Power Management Systems | Battery Protection Circuits |
Use Scenario: Load switch in industrial PLC backplane power distribution with hot-swap capability. IC Role / Device Role / Timing Role: Inrush current limiter and fault-isolation switch controlled via microcontroller GPIO. Use Value: 60V VDSS and 19A IAS support 48V nominal inputs with surge tolerance up to 65V, eliminating need for external TVS. | Use Scenario: Charge/discharge FET in 3-cell Li-ion battery packs for medical portable devices. IC Role / Device Role / Timing Role: Bidirectional current blocking element protecting cells from overcurrent and short-circuit faults. Use Value: 16mΩ RDS(ON) limits voltage drop to <600mV at 37.5A, preserving pack capacity and enabling precise current sensing. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| DMT6010LPS-13 | 60V, 10mΩ @ 10V, 50A ID - lower RDS(ON) but larger PowerDI5060 package (5.0×6.0mm) | Requires more PCB area; better suited for >40A continuous thermal designs | Select when thermal budget allows larger footprint and conduction loss dominates system efficiency |
| SiR626DP-T1-GE3 | 60V, 12.5mΩ @ 10V, 42A ID - TrenchFET Gen IV, PQFN 5×6mm, higher QG (23nC) | Higher gate drive power needed; less suitable for high-frequency (>1MHz) operation | Prefer when existing layout uses 5×6mm PQFN and gate driver can supply >2A peak |
Compared with DMT615MLFV-13, DMT6010LPS-13 offers lower conduction loss in larger-area thermal designs, while SiR626DP-T1-GE3 trades higher gate charge for tighter RDS(ON) tolerance - making DMT615MLFV-13 optimal for space-constrained 3.3mm² footprints requiring balanced switching/conduction performance.
Availability
DMT615MLFV-13 is available at Aetrix Electronics and suitable for motor control, DC-DC converters, and power management systems requiring stable component supply, long-term lifecycle assurance, and RoHS-compliant manufacturing.
Supply support for DMT615MLFV-13 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design centers across Asia and manufacturing in China, Taiwan, and the US.
The Power MOSFET product line targets high-efficiency power conversion, emphasizing low RDS(ON), fast switching, and ruggedness in compact packages for industrial, computing, and automotive subsystems.
FAQ
What is the maximum safe operating temperature for DMT615MLFV-13?
The junction temperature must not exceed +150°C under any operating condition. With RθJC = 3.6°C/W and typical PCB copper thermal mass, sustained 38A operation requires case temperature ≤ +85°C - verified using transient thermal impedance curves (Figure 13) and SOA plots (Figure 12) for pulse durations ≥10ms.
Can DMT615MLFV-13 be used as a synchronous rectifier in a 48V input buck converter?
Yes - its 60V VDSS, 16mΩ RDS(ON), and 20.6ns body diode recovery time meet requirements for secondary-side switching in 48V-to-12V/5V buck converters operating up to 500kHz. Layout must minimize source inductance using Kelvin-source connections (Pins 1–3) to preserve gate drive integrity.
Does DMT615MLFV-13 require a gate resistor for EMI control?
A 5–10Ω gate resistor is recommended to dampen high-frequency ringing caused by LGS/Ciss resonance. The device's 1.48Ω intrinsic gate resistance and low Crss (19pF) reduce Miller effect, but external damping remains critical in layouts with >2cm gate trace length or shared ground paths.
How does the PowerDI3333-8 package compare thermally to SO-8?
PowerDI3333-8 delivers 34.72W power dissipation at TC = +25°C (RθJC = 3.6°C/W), versus ~2.5W for standard SO-8 (RθJA ≈ 62°C/W). Its exposed drain pad provides direct thermal path to PCB copper, achieving >10× higher thermal efficiency in identical board area - confirmed by JEDEC JESD51-7 testing.
DMT615MLFV-13 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Diodes Incorporated
- Series:
- -
- Package/Case:
- 8-PowerVDFN
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 60 V
- Current - Continuous Drain (Id) @ 25°C:
- 8.5A (Ta), 38A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 16mOhm @ 10A, 10V
- Vgs(th) (Max) @ Id:
- 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 15.5 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 1039 pF @ 30 V
- FET Feature:
- -
- Power Dissipation (Max):
- 1.76W (Ta)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- PowerDI3333-8 (Type UX)
DMT615MLFV-13 FAQ
1.How can I place an order for DMT615MLFV-13 through Aetrix?
Please submit a Request for Quotation (RFQ) for DMT615MLFV-13 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for DMT615MLFV-13 reliable?
The price and inventory of DMT615MLFV-13 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMT615MLFV-13 is usually 5 days.
3.What payment methods are accepted for DMT615MLFV-13?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMT615MLFV-13 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for DMT615MLFV-13?
DMT615MLFV-13 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your DMT615MLFV-13 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for DMT615MLFV-13?
For technical support, including DMT615MLFV-13 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMT615MLFV-13 requirements.
6.How does Aetrix verify that DMT615MLFV-13 is sourced from the original manufacturer or authorized distributors?
All DMT615MLFV-13 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMT615MLFV-13 meets industry standards.
7.What is the process for return or replacement of DMT615MLFV-13?
All DMT615MLFV-13 units undergo pre-shipment inspection (PSI). If there is an issue with DMT615MLFV-13, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The DMT615MLFV-13 part is unused and in its original packaging.
Return procedure for DMT615MLFV-13:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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