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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Diodes Incorporated DMT615MLFV-7

Name: DMT615MLFV-7
Brand: Diodes Incorporated
SKU: DMT615MLFV-7
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: DMT615MLFV-7

Manufacturer:: Diodes Incorporated

Category:: FETs, MOSFETs

Package:: 8-PowerVDFN

Datasheet:: DMT615MLFV-7.pdf

Description:: MOSFET N-CH 60V PWRDI3333

Quantity:: RFQ Add To RFQ list

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Inventory:4,862

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Product details

Overview

DMT615MLFV-7 from Diodes Incorporated is a 60V N-channel enhancement-mode MOSFET in PowerDI3333-8 (Type UX) package, delivering 16 mΩ R_DS(ON) at V_GS = 10 V and 38 A continuous drain current at T_C = +25°C. It features ESD-protected gate, 100% unclamped inductive switching tested in production, and optimized for high-efficiency DC-DC converters and motor control stages.

For engineers reviewing the DMT615MLFV-7 datasheet, DMT615MLFV-7 pinout, DMT615MLFV-7 application, or DMT615MLFV-7 equivalent, key selection criteria include its low R_DS(ON) at 4.5 V drive, thermally efficient PowerDI3333-8 footprint, body diode recovery performance (t_RR = 20.6 ns), and robust avalanche rating (E_AS = 18.05 mJ).

Technical Context

This MOSFET employs planar trench-gate silicon technology to balance conduction loss and switching speed. Its 60 V BVDSS rating supports 48 V bus systems, while the 19.5–26 mΩ R_DS(ON) at 4.5 V enables efficient operation with standard logic-level drivers.

The device integrates an intrinsic body diode with 1.2 V forward voltage at 1 A and exhibits controlled reverse recovery (Q_RR = 11.4 nC), making it suitable for synchronous rectification and hard-switched topologies where diode behavior impacts efficiency and EMI.

Key Specifications

Parameter	Value and Actual Design Meaning
BVDSS	60 V - Supports 48 V nominal input rails with 25% margin for transients.
RDS(ON) @ 10 V	16 mΩ max - Enables ≤0.61 W conduction loss at 38 A in TO-220-equivalent thermal conditions.
RDS(ON) @ 4.5 V	26 mΩ max - Ensures usable on-resistance with 3.3 V or 5 V gate drivers without level-shifting.
ID (TC = 25°C)	38 A - Sustains high-current loads in compact power stages when mounted on 2 oz copper FR-4 with thermal pad.
EAS	18.05 mJ - Withstands single-pulse inductive energy up to L = 0.1 mH without failure under production-tested conditions.
tRR / QRR	20.6 ns / 11.4 nC - Reduces switching loss and voltage overshoot during freewheeling in buck and half-bridge configurations.
RθJC	3.6 °C/W - Enables direct thermal path from junction to PCB copper via exposed drain pad, critical for high-power density designs.

Pinout & Package

Package: PowerDI3333-8 (Type UX), surface-mount, thermally enhanced with exposed drain pad. Dimensions: 3.30 mm × 3.30 mm × 0.80 mm (L × W × H); moisture sensitivity level 1 per J-STD-020.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 3, 4 (Drain)	Power Drain Connection	Four parallel drain terminals tied to internal die drain and exposed thermal pad - primary heat path and high-current return path.
5 (Gate)	Control Input	Single gate terminal with integrated ESD protection diode - requires <20 V absolute max gate-source voltage.
6, 7, 8 (Source)	Power Source Return	Three source terminals provide low-inductance return path for switching current and reduce source loop inductance in high-dI/dt applications.

Key Features

Feature	Design Value
100% UIS tested	Guarantees robustness against inductive turn-off stress without derating - eliminates need for external snubbers in motor drive flyback paths.
PowerDI3333-8 footprint	Occupies only 33% board area of SO-8 - enables higher power density in space-constrained DC-DC modules and battery-powered equipment.
ESD-protected gate	Withstands ≥2 kV HBM - reduces handling sensitivity and improves yield in automated assembly lines without additional gate protection circuitry.
Halogen- and antimony-free	<900 ppm Br, <900 ppm Cl, <1000 ppm Sb - meets IPC-1752A Class 2 requirements for green electronics manufacturing and end-of-life recycling.

Applications

Motor Control

DC-DC Converters

Use Scenario: Brushed DC motor H-bridge driver in portable power tools.

IC Role / Device Role / Timing Role: Low-side switch controlling motor direction and PWM speed regulation at 20–50 kHz.

Use Value: 26 mΩ R_DS(ON) at 4.5 V ensures >92% efficiency at 15 A load with 3.3 V MCU GPIO drive, reducing heatsink requirement.

Use Scenario: Synchronous rectifier in 12 V → 5 V/10 A buck converter for industrial IoT gateway.

IC Role / Device Role / Timing Role: Secondary-side power switch replacing Schottky diode to minimize conduction loss.

Use Value: Body diode t_RR = 20.6 ns and Q_RR = 11.4 nC limit voltage spike and cross-conduction loss during dead-time transitions.

Power Management

Load Switching

Use Scenario: Hot-swap controller for 48 V telecom shelf power distribution.

IC Role / Device Role / Timing Role: Primary pass element in OR-ing and inrush limiting circuit with external gate driver.

Use Value: 60 V BVDSS and 18.05 mJ EAS tolerate line transients and allow safe fault clearing without catastrophic failure.

Use Scenario: High-current USB-C PD power path switch in laptop docking station.

IC Role / Device Role / Timing Role: Single-pole, single-throw load switch enabling/disabling 20 V/5 A power delivery.

Use Value: Exposed drain pad and 3.6 °C/W R_θJC support 1.76 W ambient-rated dissipation without thermal throttling at full load.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
DMT6012LPS-13	60 V, 12.2 mΩ @ 10 V, PowerDI5060-8 package (larger footprint, lower R_DS(ON))	Higher current capability (50 A), but requires more PCB area and has slower t_F (7.5 ns vs. 5 ns)	Prefer when thermal budget allows larger package and lowest conduction loss is prioritized over switching speed.
SiR872DP-T1-GE3	60 V, 15.5 mΩ @ 10 V, PowerPAK® SO-8 package, higher Q_G (22.5 nC vs. 15.5 nC)	SO-8 compatible layout, but higher gate charge increases driver loss and limits 1 MHz+ operation	Choose when legacy SO-8 board reuse is required and gate drive strength exceeds 1 A peak.

Compared with DMT615MLFV-7, DMT6012LPS-13 offers lower R_DS(ON) at cost of larger size and slower switching, while SiR872DP-T1-GE3 trades gate drive efficiency for package compatibility - DMT615MLFV-7 uniquely balances 4.5 V drive, small footprint, and fast recovery in one thermally optimized package.

Availability

DMT615MLFV-7 is available at Aetrix Electronics and suitable for motor control, DC-DC converters, and power management applications requiring stable component supply, RoHS-compliant sourcing, and consistent thermal performance across temperature ranges.

Supply support for DMT615MLFV-7 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design, manufacturing, and sales operations across Asia, Europe, and North America.

This device belongs to Diodes' PowerMOS™ portfolio, engineered specifically for high-efficiency, high-density power conversion in consumer, industrial, and computing applications where thermal performance and gate-drive compatibility are critical.

FAQ

What is the maximum gate-source voltage rating for DMT615MLFV-7?

The absolute maximum gate-source voltage (V_GSS) is ±20 V. Exceeding this rating risks permanent gate oxide damage. Recommended operating range is –12 V to +15 V for reliable long-term performance, especially under transient conditions or with non-isolated gate drivers.

Can DMT615MLFV-7 be used in synchronous rectification without external Schottky diodes?

Yes - its intrinsic body diode is characterized with V_SD = 0.7–1.2 V at 1 A and t_RR = 20.6 ns, enabling direct use in synchronous buck secondaries. However, optimal efficiency requires precise gate timing to avoid shoot-through; external gate drivers with adaptive dead-time control are recommended.

How does the PowerDI3333-8 package improve thermal performance versus SO-8?

The PowerDI3333-8 exposes the drain pad directly to the PCB, achieving R_θJC = 3.6 °C/W - over 5× better than typical SO-8's R_θJC ≈ 20 °C/W. This allows 34.72 W power dissipation at T_C = 25°C, compared to ~3 W for SO-8 under identical board conditions.

Is DMT615MLFV-7 suitable for automotive applications?

It is not AEC-Q101 qualified and lacks automotive-specific qualification data (e.g., HTOL, UHAST). While its -55°C to +150°C operating range meets under-hood temperature requirements, Diodes Incorporated does not endorse or warrant its use in automotive safety-critical systems without customer-led validation.

DMT615MLFV-7 Specifications

Product attributes: Attribute value

Manufacturer:: Diodes Incorporated

Series:: -

Package/Case:: 8-PowerVDFN

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 60 V

Current - Continuous Drain (Id) @ 25°C:: 8.5A (Ta), 38A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 16mOhm @ 10A, 10V

Vgs(th) (Max) @ Id:: 3V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 15.5 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 1039 pF @ 30 V

FET Feature:: -

Power Dissipation (Max):: 1.76W (Ta)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PowerDI3333-8 (Type UX)

DMT615MLFV-7 FAQ

1.How can I place an order for DMT615MLFV-7 through Aetrix?

Please submit a Request for Quotation (RFQ) for DMT615MLFV-7 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for DMT615MLFV-7 reliable?

The price and inventory of DMT615MLFV-7 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMT615MLFV-7 is usually 5 days.

3.What payment methods are accepted for DMT615MLFV-7?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMT615MLFV-7 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for DMT615MLFV-7?

DMT615MLFV-7 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your DMT615MLFV-7 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for DMT615MLFV-7?

For technical support, including DMT615MLFV-7 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMT615MLFV-7 requirements.

6.How does Aetrix verify that DMT615MLFV-7 is sourced from the original manufacturer or authorized distributors?

All DMT615MLFV-7 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMT615MLFV-7 meets industry standards.

7.What is the process for return or replacement of DMT615MLFV-7?

All DMT615MLFV-7 units undergo pre-shipment inspection (PSI). If there is an issue with DMT615MLFV-7, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The DMT615MLFV-7 part is unused and in its original packaging.

Return procedure for DMT615MLFV-7:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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