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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Diodes Incorporated DMT616MLSS-13

Name: DMT616MLSS-13
Brand: Diodes Incorporated
SKU: DMT616MLSS-13
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: DMT616MLSS-13

Manufacturer:: Diodes Incorporated

Category:: FETs, MOSFETs

Package:: 8-SOIC (0.154", 3.90mm Width)

Datasheet:: DMT616MLSS-13.pdf

Description:: MOSFET N-CH 60V 10A 8SO

Quantity:: RFQ Add To RFQ list

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Inventory:4,561

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Product details

Overview

DMT616MLSS-13 from Diodes Incorporated is a 60V N-channel enhancement-mode MOSFET in SO-8 package, rated for 10A continuous drain current at V_GS = 10V, with R_DS(ON) = 14 mΩ (max), optimized for high-frequency switching and synchronous rectification in DC-DC converters.

For engineers reviewing the DMT616MLSS-13 datasheet, DMT616MLSS-13 pinout, DMT616MLSS-13 application, or DMT616MLSS-13 equivalent, key selection criteria include its 100% production-tested UIS capability, low gate charge (Q_g = 13.6 nC @ 10V), thermal resistance (R_θJA = 60.7 °C/W on 2oz copper), body diode recovery (t_RR = 23 ns), and RoHS-compliant green packaging.

Technical Context

This MOSFET employs a trench-gate process to achieve low R_DS(ON) while maintaining fast switching speed (t_r = 4.4 ns, t_f = 8.5 ns) and low input capacitance (C_iss = 785 pF). Its gate threshold voltage (1.2–2.2 V) ensures stable turn-on under typical 3.3V/5V logic drive.

The device integrates a robust intrinsic body diode with V_SD = 0.7–1.2 V at 1 A and Q_RR = 14.1 nC, enabling efficient synchronous rectification without external diode replacement. Thermal design is supported by R_θJC = 8.7 °C/W and SO-8 footprint compatibility with standard PCB layout guidelines.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	60 V - Withstands up to 60V drain-source blocking voltage in off-state, suitable for 48V bus and PoE applications.
R_DS(ON)	14 mΩ max @ V_GS = 10V - Limits conduction loss to ≤1.12 W at 10A, critical for thermally constrained DC-DC stages.
I_D (continuous)	10 A @ T_A = 25°C - Supports high-current power rails when mounted on 2oz copper with thermal pad.
Q_g	13.6 nC @ V_GS = 10V - Enables efficient gate driving with <1.4 µC total charge per switching cycle at 100 kHz.
t_RR	23 ns - Minimizes reverse recovery loss during hard-switched synchronous rectification in buck converters.
E_AS	12.3 mJ - Confirmed avalanche energy rating supports reliable operation under inductive load transients.
R_θJA	60.7 °C/W - Achieved with 2oz copper thermal bias; enables 1.39W dissipation before junction exceeds 150°C ambient.

Pinout & Package

Package: SO-8 surface-mount, 1.45 mm height, 4.90 mm × 6.00 mm body, matte tin-plated leadframe, UL 94V-0 molding compound.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 3, 4	Source (S)	Common source connection for internal parallel FET cells; tied to exposed thermal pad for enhanced heat transfer.
5	Gate (G)	Control terminal requiring ≤±20V drive; low C_iss (785 pF) reduces driver power demand.
6, 7, 8	Drain (D)	High-side or low-side switch node; pins 6–8 internally paralleled to handle 10A with minimal inductance.

Key Features

Feature	Design Value
100% UIS tested in production	Guarantees robustness against unclamped inductive switching events without derating.
Low R_DS(ON) @ 4.5V	21 mΩ max enables direct drive from 5V microcontrollers without level-shifting.
Green, halogen-free construction	Meets Br+Cl <1500 ppm, Sb <1000 ppm, and full RoHS 3 compliance for eco-sensitive designs.
Fast body diode recovery	t_RR = 23 ns and Q_RR = 14.1 nC reduce cross-conduction loss in synchronous buck topologies.
Thermal performance validated	R_θJC = 8.7 °C/W confirms effective heat path from junction to case via SO-8 thermal pad.

Applications

Server VRM Power Stage

USB-C PD Fast Charger

Use Scenario: High-efficiency 48V-to-12V intermediate bus conversion in server motherboard VRMs.

IC Role / Device Role / Timing Role: Low-side synchronous rectifier in multiphase buck converter operating at 500 kHz.

Use Value: 14 mΩ R_DS(ON) and 13.6 nC Q_g minimize conduction + switching losses, improving VRM efficiency by ≥0.8% at 20A load.

Use Scenario: Secondary-side synchronous rectification in 65W USB-C PD adapter with GaN primary.

IC Role / Device Role / Timing Role: 60V-rated output rectifier replacing Schottky diode in LLC-synchronous rectified topology.

Use Value: 23 ns t_RR eliminates need for dead-time optimization; 10A rating supports 3A@20V output with margin.

Industrial 24V PLC I/O Module

Automotive ADAS Camera Power Supply

Use Scenario: 24V input DC-DC step-down for isolated sensor interface circuitry in programmable logic controllers.

IC Role / Device Role / Timing Role: High-side switch controlling 5V/3.3V auxiliary rail with overcurrent protection.

Use Value: 100% UIS qualification ensures survival during 24V bus short-circuit events; SO-8 footprint simplifies layout in space-constrained modules.

Use Scenario: Compact 12V-to-3.3V point-of-load regulator powering image sensor and ISP in automotive camera ECU.

IC Role / Device Role / Timing Role: Low-R_DS(ON) power switch in 2 MHz buck converter meeting AEC-Q101 temperature cycling requirements.

Use Value: R_DS(ON) variation <20% from −40°C to +125°C ensures stable regulation across automotive ambient range.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
DMT6010LPS-13	R_DS(ON) = 10.5 mΩ @ 10V; higher Q_g (17.5 nC); same SO-8 package.	Better conduction loss but slower switching; suited for lower-frequency (<300 kHz) high-current rails.	Select when thermal headroom is limited and switching frequency is secondary to efficiency at full load.
SiHFL064R-T1-GE3	60V, 12.5 mΩ @ 10V, 15.5 nC Q_g, TO-252 package; no integrated thermal pad.	Larger footprint, higher R_θJA (75 °C/W); requires larger PCB area and heatsinking.	Choose only if SO-8 mechanical constraints prevent use and board space allows TO-252 mounting.

Compared with DMT616MLSS-13, DMT6010LPS-13 trades faster switching for lower R_DS(ON), while SiHFL064R-T1-GE3 sacrifices package compactness and thermal performance for marginally better conduction-making DMT616MLSS-13 optimal for space- and frequency-constrained DC-DC designs.

Availability

DMT616MLSS-13 is available at Aetrix Electronics and suitable for server VRM power stages, USB-C PD fast chargers, and industrial 24V PLC I/O modules requiring stable component supply and long-term manufacturing continuity.

Supply support for DMT616MLSS-13 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design, manufacturing, and sales operations across Asia, Europe, and North America.

This MOSFET belongs to Diodes' PowerMOS™ portfolio, engineered specifically for high-efficiency, high-frequency power conversion in computing, consumer, and industrial applications where low R_DS(ON), fast switching, and robust reliability are essential.

FAQ

What is the maximum safe operating junction temperature for DMT616MLSS-13?

The absolute maximum junction temperature is +150°C, verified across all operating conditions. Derating begins above +125°C ambient when using the 2oz copper thermal layout (R_θJA = 60.7 °C/W), and continuous operation at full 10A drain current requires careful thermal design to maintain T_J ≤ 135°C for long-term reliability.

Can DMT616MLSS-13 be driven directly from a 3.3V GPIO without a gate driver?

No-its gate threshold voltage (1.2–2.2 V) allows turn-on at 3.3V, but R_DS(ON) rises to 21 mΩ max at V_GS = 4.5V and is not specified below that. At 3.3V, R_DS(ON) may exceed 35 mΩ, increasing conduction loss significantly; a 5V or 10V gate driver is required for rated performance.

Does DMT616MLSS-13 have an integrated ESD protection diode on the gate?

No-this MOSFET does not include on-chip gate ESD protection. The gate oxide is rated for ±20V V_GSS, but transient ESD events exceeding ±2kV HBM can cause failure. External gate protection (e.g., 10Ω series resistor + 12V TVS) is recommended in handling and PCB layout per Diodes' application note AN-5001.

Is the exposed thermal pad on the SO-8 package electrically connected to any internal node?

Yes-the exposed pad is internally connected to the source (S) terminals (pins 1–4). It must be soldered to a PCB copper pour tied to the source net to ensure both thermal performance (R_θJC = 8.7 °C/W) and electrical integrity; floating or grounded pads will degrade thermal resistance and risk latch-up.

DMT616MLSS-13 Specifications

Product attributes: Attribute value

Manufacturer:: Diodes Incorporated

Series:: -

Package/Case:: 8-SOIC (0.154", 3.90mm Width)

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 60 V

Current - Continuous Drain (Id) @ 25°C:: 10A (Ta)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 14mOhm @ 8.5A, 10V

Vgs(th) (Max) @ Id:: 2.2V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 13.6 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 785 pF @ 30 V

FET Feature:: -

Power Dissipation (Max):: 1.39W (Ta)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: 8-SOP

DMT616MLSS-13 FAQ

1.How can I place an order for DMT616MLSS-13 through Aetrix?

Please submit a Request for Quotation (RFQ) for DMT616MLSS-13 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for DMT616MLSS-13 reliable?

The price and inventory of DMT616MLSS-13 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMT616MLSS-13 is usually 5 days.

3.What payment methods are accepted for DMT616MLSS-13?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMT616MLSS-13 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for DMT616MLSS-13?

DMT616MLSS-13 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your DMT616MLSS-13 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for DMT616MLSS-13?

For technical support, including DMT616MLSS-13 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMT616MLSS-13 requirements.

6.How does Aetrix verify that DMT616MLSS-13 is sourced from the original manufacturer or authorized distributors?

All DMT616MLSS-13 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMT616MLSS-13 meets industry standards.

7.What is the process for return or replacement of DMT616MLSS-13?

All DMT616MLSS-13 units undergo pre-shipment inspection (PSI). If there is an issue with DMT616MLSS-13, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The DMT616MLSS-13 part is unused and in its original packaging.

Return procedure for DMT616MLSS-13:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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