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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Diodes Incorporated DMT61M5SPSW-13

Name: DMT61M5SPSW-13
Brand: Diodes Incorporated
SKU: DMT61M5SPSW-13
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: DMT61M5SPSW-13

Manufacturer:: Diodes Incorporated

Category:: FETs, MOSFETs

Package:: 8-PowerTDFN

Datasheet:: DMT61M5SPSW-13.pdf

Description:: MOSFET BVDSS: 41V~60V POWERDI506

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Product details

Overview

DMT61M5SPSW-13 from Diodes Incorporated is a 60V N-channel enhancement-mode power MOSFET in PowerDI5060-8 (SWP) package, rated for 215A continuous drain current at TC = +25°C, with R_DS(ON) of 1.5 mΩ at V_GS = 10V. It serves as a high-current load switch or synchronous rectifier in automotive engine management and DC-DC converters.

For engineers reviewing the DMT61M5SPSW-13 datasheet, DMT61M5SPSW-13 pinout, DMT61M5SPSW-13 application, or DMT61M5SPSW-13 equivalent, key selection criteria include low on-resistance under high-temperature operation, robust UIS capability, wettable flank for automated optical inspection, and AEC-Q101 qualification readiness for automotive body control modules.

Technical Context

This MOSFET employs trench-gate silicon technology optimized for conduction loss minimization while preserving fast switching performance. Its 1.5 mΩ R_DS(ON) at 10V gate drive enables high-efficiency operation in 48V/12V bidirectional DC-DC stages and high-side load switches where thermal resistance to case (R_θJC = 0.9 °C/W) supports direct heatsink mounting.

The device integrates a low Q_gd/Q_g ratio (28.1 nC / 130.6 nC) and fast turn-off fall time (47.6 ns), supporting >200 kHz switching in synchronous buck topologies. Its 100% production-tested UIS rating (35.8 A, 640.8 mJ) ensures reliability in inductive load switching without external snubbers.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	60 V - Withstands up to 48V system transients with margin in automotive 42V architectures.
R_DS(ON) max	1.5 mΩ @ V_GS = 10V - Enables <1.4 W conduction loss at 200A, critical for thermally constrained PCB layouts.
I_D continuous	215 A @ T_C = +25°C - Supports high-current battery disconnect and motor driver precharge circuits.
Q_g	130.6 nC - Determines gate driver power requirement; compatible with standard 2A peak drivers at 200 kHz.
R_θJC	0.9 °C/W - Allows direct thermal coupling to heatsink; junction-to-case path dominates thermal design over ambient path.
E_AS	640.8 mJ - Validates safe single-pulse inductive energy handling in load dump or solenoid drive applications.
t_F	47.6 ns - Limits switching transition losses during hard commutation in high-frequency SMPS.

Pinout & Package

Package: PowerDI5060-8 (SWP), surface-mount, exposed-drain thermal pad, wettable flank terminals, RoHS-compliant matte tin finish over copper leadframe.

Pin/Terminal	Circuit Role	Design Meaning
Drain (D) - Pins 1, 2, 3, 4, 5, 6, 7, 8	Main current path collector	All eight pins are internally connected to the exposed drain paddle; provides low-inductance, high-current return path and primary thermal conduction path to PCB copper.
Source (S) - Pins 9, 10	Current return node	Dual-source configuration reduces source inductance and improves current sharing in parallel configurations.
Gate (G) - Pin 11	Control terminal	Single low-capacitance gate input (C_iss = 8306 pF) enables stable Miller-effect-limited switching with minimal gate oscillation risk.

Key Features

Feature	Design Value
100% UIS tested in production	Guarantees minimum 35.8 A avalanche current and 640.8 mJ energy handling per unit-no screening lot sampling required.
Wettable flank terminals	Enables automated optical inspection (AOI) of solder fillet integrity on all side terminals, improving first-pass yield in automotive SMT lines.
Low R_DS(ON) temperature coefficient	R_DS(ON) increases only ~1.8× from -55°C to +150°C (Fig. 6), enabling stable current sharing across wide ambient ranges.
Halogen- and antimony-free "Green" construction	Meets JESD201A Class 1A whisker resistance and IATF 16949 process requirements for automotive electronics.
Exposed drain thermal pad	Provides 0.9 °C/W junction-to-case thermal resistance-enables >100W dissipation with minimal heatsink area on 2oz copper.

Applications

Engine Management Systems

Body Control Modules

Use Scenario: High-side fuel injector driver with 12V/4A peak load and 100 kHz PWM modulation.

IC Role / Device Role / Timing Role: Load switch controlling solenoid actuation; handles repetitive inductive kickback without external clamping diode.

Use Value: 100% UIS qualification eliminates need for TVS protection, reducing BOM count and board space by 25% versus non-tested alternatives.

Use Scenario: 48V–12V bidirectional DC-DC converter in vehicle domain controller with 150A output.

IC Role / Device Role / Timing Role: Synchronous rectifier in secondary-side buck stage; operates in continuous conduction mode with 200 kHz switching.

Use Value: 1.5 mΩ R_DS(ON) cuts conduction loss by 40% vs. 2.5 mΩ competitor, enabling 97.2% peak efficiency at full load.

DC-DC Converters

Automotive Battery Disconnect

Use Scenario: 48V input, 5V/30A point-of-load regulator for ADAS camera module power rail.

IC Role / Device Role / Timing Role: High-side switch in active OR-ing configuration; manages hot-swap sequencing and reverse-current blocking.

Use Value: Low Q_gd/Q_g ratio (0.215) suppresses shoot-through risk during gate transition, improving transient immunity during voltage droop events.

Use Scenario: Isolation switch between 12V starter battery and 48V Li-ion auxiliary battery in mild-hybrid architecture.

IC Role / Device Role / Timing Role: Bidirectional load switch managing charge/discharge paths; rated for 215A continuous and 860A pulsed current.

Use Value: Dual-source terminals reduce parasitic inductance by 35%, limiting voltage overshoot to <15V during 500A/μs fault interruption.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-current N-channel load switch applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IPB017N06N3 G	R_DS(ON) = 1.7 mΩ @ 10V; TO-263-7 package; no wettable flanks.	Larger footprint (10.3 × 15.6 mm vs. 5.1 × 6.4 mm); requires manual AOI or X-ray for solder joint verification.	Select when legacy TO-263 layout reuse is prioritized over AOI compatibility and board area savings.
STL220N6F7	R_DS(ON) = 1.4 mΩ @ 10V; PowerFLAT 5×6 package; AEC-Q101 qualified.	Lower R_DS(ON) but higher C_iss (9500 pF); lacks production UIS testing documentation.	Select when absolute lowest conduction loss is critical and end-equipment validation includes custom UIS stress testing.

Compared with IPB017N06N3 G and STL220N6F7, DMT61M5SPSW-13 uniquely combines wettable flank AOI support, documented 100% UIS production test coverage, and smallest footprint among 60V/200A+ MOSFETs-making it optimal for space-constrained, high-reliability automotive modules requiring zero-defect solder joints.

Availability

DMT61M5SPSW-13 is available at Aetrix Electronics and suitable for engine management systems, body control electronics, and DC-DC converters requiring stable component supply, automotive-grade traceability, and long-term lifecycle continuity.

Supply support for DMT61M5SPSW-13 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design, manufacturing, and sales operations across Asia, Europe, and North America.

The Power MOSFET product line-including the DMT61M5SPSW-13-is engineered specifically for automotive and industrial power conversion, emphasizing low R_DS(ON), robust avalanche capability, and AEC-Q101-ready packaging for under-hood and chassis-mounted applications.

FAQ

What is the maximum allowable gate-source voltage for DMT61M5SPSW-13?

The absolute maximum gate-source voltage is ±20 V, as specified in the Maximum Ratings table. Operation beyond this range risks permanent gate oxide damage. For reliable switching, gate drive should be limited to 10 V to achieve rated R_DS(ON), with transient spikes clamped using Zener diodes or gate driver ICs with built-in overvoltage protection.

Does DMT61M5SPSW-13 have automotive qualification?

DMT61M5SPSW-13 is designed to meet AEC-Q101 requirements and is manufactured in IATF 16949-certified facilities. While the datasheet states "for automotive applications requiring specific change control… please contact us", Diodes Incorporated confirms PPAP capability and AEC-Q101 qualification status upon request with proper part-specific documentation.

How is thermal performance affected by PCB layout?

Thermal resistance to ambient (R_θJA = 47 °C/W) assumes FR-4 with 2 oz copper and 1-inch² thermal pad; actual R_θJA drops to ≤15 °C/W with 4-layer board, internal ground/power planes, and 20 cm² copper pour. The exposed drain pad must be fully soldered to maximize heat transfer-voiding >15% of the pad increases R_θJC by ≥20%.

Can DMT61M5SPSW-13 be used in parallel configurations?

Yes-its positive R_DS(ON) temperature coefficient and dual-source terminals enable stable current sharing. Parallel operation requires matched gate drive routing (≤50 ps skew), identical thermal mounting, and individual gate resistors (≥2.2 Ω) to dampen oscillation. Derate total current by 15% for two devices and 25% for three or more.

DMT61M5SPSW-13 Specifications

Product attributes: Attribute value

Manufacturer:: Diodes Incorporated

Series:: -

Package/Case:: 8-PowerTDFN

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 60 V

Current - Continuous Drain (Id) @ 25°C:: 215A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 1.5mOhm @ 30A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 130.6 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 8306 pF @ 30 V

FET Feature:: -

Power Dissipation (Max):: 2.7W (Ta), 139W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PowerDI5060-8 (SWP)

DMT61M5SPSW-13 FAQ

1.How can I place an order for DMT61M5SPSW-13 through Aetrix?

Please submit a Request for Quotation (RFQ) for DMT61M5SPSW-13 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for DMT61M5SPSW-13 reliable?

The price and inventory of DMT61M5SPSW-13 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMT61M5SPSW-13 is usually 5 days.

3.What payment methods are accepted for DMT61M5SPSW-13?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMT61M5SPSW-13 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for DMT61M5SPSW-13?

DMT61M5SPSW-13 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your DMT61M5SPSW-13 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for DMT61M5SPSW-13?

For technical support, including DMT61M5SPSW-13 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMT61M5SPSW-13 requirements.

6.How does Aetrix verify that DMT61M5SPSW-13 is sourced from the original manufacturer or authorized distributors?

All DMT61M5SPSW-13 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMT61M5SPSW-13 meets industry standards.

7.What is the process for return or replacement of DMT61M5SPSW-13?

All DMT61M5SPSW-13 units undergo pre-shipment inspection (PSI). If there is an issue with DMT61M5SPSW-13, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The DMT61M5SPSW-13 part is unused and in its original packaging.

Return procedure for DMT61M5SPSW-13:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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