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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Diodes Incorporated DMT61M8SPS-13

Name: DMT61M8SPS-13
Brand: Diodes Incorporated
SKU: DMT61M8SPS-13
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: DMT61M8SPS-13

Manufacturer:: Diodes Incorporated

Category:: FETs, MOSFETs

Package:: 8-PowerTDFN

Datasheet:: DMT61M8SPS-13.pdf

Description:: MOSFET BVDSS: 41V~60V POWERDI506

Quantity:: RFQ Add To RFQ list

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Inventory:4,520

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Product details

Overview

DMT61M8SPS-13 from Diodes Incorporated is a 60V N-channel enhancement-mode power MOSFET in PowerDI5060-8 (Type K) package, rated for 205A continuous drain current at TC = +25°C, with R_DS(ON) of 1.6 mΩ at V_GS = 10V and 100% production-tested UIS capability. It serves as a high-current load switch or synchronous rectifier in automotive DC-DC converters and body control modules.

For engineers reviewing the DMT61M8SPS-13 datasheet, DMT61M8SPS-13 pinout, DMT61M8SPS-13 application, or DMT61M8SPS-13 equivalent, key selection criteria include low on-resistance under high-temperature operation, fast switching performance (t_D(OFF) = 86.2 ns), robust avalanche energy rating (E_AS = 640.8 mJ), and AEC-Q101 readiness for automotive power systems.

Technical Context

This MOSFET employs trench-gate silicon technology optimized for conduction loss minimization while preserving switching speed. Its 8-pin PowerDI5060-8 (Type K) layout integrates an exposed drain pad for thermal conduction and features dual-source/dual-drain paralleling within the die to achieve ultra-low R_DS(ON).

The device operates with a gate threshold voltage (V_GS(TH)) of 2–4 V and supports gate drive voltages up to ±20 V. Its dynamic characteristics-including C_iss = 8306 pF, Q_g = 130.6 nC, and t_R = 28.5 ns-are specified at V_DS = 30 V, I_D = 30 A, enabling precise timing analysis in high-frequency synchronous buck stages.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	60 V - Maximum blocking voltage before avalanche onset; suitable for 48V automotive bus and industrial 48V systems.
R_DS(ON) max	1.6 mΩ @ V_GS = 10 V - Enables <1.0 W conduction loss at 205 A, critical for thermally constrained PCB layouts.
I_D continuous	205 A @ T_C = +25°C - Validated continuous current rating with thermal bias to 1-inch copper plate per JEDEC JESD51-2.
E_AS	640.8 mJ - Confirmed single-pulse avalanche energy at L = 1 mH; ensures reliability during inductive load turn-off transients.
Q_g	130.6 nC - Total gate charge determines driver strength requirement; enables efficient gate driving with <2 A peak current at 1 MHz switching.
t_D(OFF)	86.2 ns - Turn-off delay time at V_DD = 30 V, R_g = 3 Ω; defines minimum dead-time setting in half-bridge configurations.
T_J range	–55°C to +150°C - Full operational junction temperature range validated per AEC-Q101 stress test conditions.

Pinout & Package

Package: PowerDI5060-8 (Type K), surface-mount, thermally enhanced with exposed drain pad. Molded plastic case meets UL 94V-0; moisture sensitivity level 1 per J-STD-020.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 3, 4 (Drain)	Power Drain Terminal (common)	Four parallel drain connections tied internally to exposed metal pad; primary thermal and current path to PCB heatsink.
5, 6 (Source)	Power Source Terminal	Dual-source pins reduce source inductance and improve current sharing in high-di/dt applications.
7 (Gate)	Control Input	Single gate input with low R_g = 3.0 Ω; designed for direct connection to standard gate drivers without external series resistance.
8 (Source)	Power Source Terminal	Third source pin providing additional low-inductance return path; improves stability in high-frequency switching.

Key Features

Feature	Design Value
100% UIS tested in production	Guarantees avalanche ruggedness across full manufacturing lot-no screening failure risk in engine start-stop or load dump events.
Low R_DS(ON) × Q_g figure-of-merit	209 mΩ·nC - Balances conduction and switching losses for optimal efficiency in 200–500 kHz DC-DC topologies.
Thermal resistance R_θJC	0.9 °C/W - Enables >130 W power dissipation with minimal junction-to-case delta-T; reduces need for external heatsinks.
Lead-free, halogen-free construction	RoHS 3 compliant with Br+Cl <1500 ppm and Sb <1000 ppm-meets automotive Tier-1 environmental requirements.
Fast body diode recovery	t_RR = 70.4 ns, Q_RR = 127 nC - Minimizes reverse recovery loss and EMI in synchronous rectification mode.

Applications

Engine Management Systems

Body Control Electronics

Use Scenario: High-side load switching for fuel pump, radiator fan, and turbocharger actuators in 12V/48V hybrid architectures.

IC Role / Device Role / Timing Role: Power MOSFET acting as controlled current path with fast turn-on (t_D(ON) = 11.3 ns) and robust short-circuit withstand capability.

Use Value: Eliminates need for discrete freewheeling diodes due to low V_SD = 0.7–1.2 V and high IS = 205 A body diode rating.

Use Scenario: Centralized power distribution unit (PDU) managing lighting, window lift, and seat actuation loads.

IC Role / Device Role / Timing Role: Low-R_DS(ON) load switch enabling precise current monitoring via shunt resistor without significant voltage drop.

Use Value: 1.6 mΩ on-resistance limits voltage drop to <0.33 V at 205 A, preserving system voltage margin under peak load.

DC-DC Converters

Start-Stop Systems

Use Scenario: Synchronous rectifier in 48V-to-12V bidirectional buck-boost converters for mild-hybrid vehicles.

IC Role / Device Role / Timing Role: Secondary-side power switch operating at 300 kHz with low Q_gd/Q_gs ratio (28.1/30.4 nC) for reduced Miller-induced shoot-through risk.

Use Value: Fast t_F = 47.6 ns fall time enables tight dead-time control, improving light-load efficiency by >2.5%.

Use Scenario: Cranking assist and battery isolation in 12V start-stop systems with regenerative braking energy recovery.

IC Role / Device Role / Timing Role: High-current bidirectional switch handling >150 A cranking pulses and 40 A regeneration currents.

Use Value: 820 A pulsed drain rating (IDM) and 35.8 A avalanche current (IAS) ensure survival during cold-cranking voltage sag events.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IPB017N06L3ATMA1	R_DS(ON) = 1.7 mΩ @ 10 V; TO-263-7 package; R_θJC = 0.75 °C/W	Higher thermal performance but larger footprint; requires different PCB layout and mounting hardware.	Select when board space allows TO-263 and junction-to-case thermal resistance below 0.8 °C/W is mandatory.
STL220N6F7	R_DS(ON) = 1.4 mΩ @ 10 V; PowerFLAT 5x6 package; no production UIS testing documented	Lower on-resistance but unverified avalanche ruggedness; not qualified to AEC-Q101.	Prefer only in non-automotive, cost-sensitive industrial supplies where transient overvoltage risk is mitigated externally.

Compared with IPB017N06L3ATMA1 and STL220N6F7, DMT61M8SPS-13 delivers best-in-class R_DS(ON) × package size ratio in PowerDI5060-8, includes production UIS validation for automotive reliability, and maintains compatibility with existing AEC-Q101-compliant design flows without footprint redesign.

Availability

DMT61M8SPS-13 is available at Aetrix Electronics and suitable for automotive engine management, body electronics, and industrial DC-DC converter designs requiring stable component supply, long-term lifecycle support, and traceable sourcing.

Supply support for DMT61M8SPS-13 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design, manufacturing, and sales operations across Asia, Europe, and North America.

The Power MOSFET product line-including the DMT61M8SPS-targets high-efficiency, high-reliability power conversion in automotive, industrial, and computing applications, emphasizing low R_DS(ON), robust avalanche performance, and AEC-Q101 qualification.

FAQ

What is the maximum allowable gate-source voltage for DMT61M8SPS-13?

The absolute maximum gate-source voltage is ±20 V, as specified in the Maximum Ratings table. Exceeding this limit risks permanent gate oxide damage. For reliable operation, gate drive circuits should be clamped to ≤±15 V with transient suppression, especially in automotive environments with load dump spikes.

Does DMT61M8SPS-13 require a gate resistor for safe operation?

A gate resistor is recommended to control dV/dt and prevent oscillation, though not strictly required due to its low intrinsic gate resistance (R_g = 3.0 Ω). Typical values range from 2.2 Ω to 10 Ω depending on driver capability and EMI constraints; lower values improve switching speed but increase ringing risk in high-di/dt layouts.

Is DMT61M8SPS-13 qualified to AEC-Q101?

Yes-Diodes Incorporated states that for automotive applications requiring AEC-Q101 qualification, PPAP capability, and IATF 16949 manufacturing, customers should contact their local representative. The device's 100% UIS testing, –55°C to +150°C operation, and green packaging align with AEC-Q101 stress test requirements.

How does the PowerDI5060-8 (Type K) package compare thermally to TO-263?

While TO-263 offers slightly better R_θJC (0.75 °C/W vs. 0.9 °C/W), the PowerDI5060-8 achieves comparable thermal performance per mm² due to its low-profile, double-sided cooling design and solderable exposed drain pad. Its smaller footprint saves >40% board area and eliminates through-hole mounting complexity.

DMT61M8SPS-13 Specifications

Product attributes: Attribute value

Manufacturer:: Diodes Incorporated

Series:: -

Package/Case:: 8-PowerTDFN

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 60 V

Current - Continuous Drain (Id) @ 25°C:: 205A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 1.6mOhm @ 30A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 130.6 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 8306 pF @ 30 V

FET Feature:: -

Power Dissipation (Max):: 2.7W (Ta), 139W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PowerDI5060-8 (Type K)

DMT61M8SPS-13 FAQ

1.How can I place an order for DMT61M8SPS-13 through Aetrix?

Please submit a Request for Quotation (RFQ) for DMT61M8SPS-13 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for DMT61M8SPS-13 reliable?

The price and inventory of DMT61M8SPS-13 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMT61M8SPS-13 is usually 5 days.

3.What payment methods are accepted for DMT61M8SPS-13?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMT61M8SPS-13 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for DMT61M8SPS-13?

DMT61M8SPS-13 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your DMT61M8SPS-13 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for DMT61M8SPS-13?

For technical support, including DMT61M8SPS-13 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMT61M8SPS-13 requirements.

6.How does Aetrix verify that DMT61M8SPS-13 is sourced from the original manufacturer or authorized distributors?

All DMT61M8SPS-13 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMT61M8SPS-13 meets industry standards.

7.What is the process for return or replacement of DMT61M8SPS-13?

All DMT61M8SPS-13 units undergo pre-shipment inspection (PSI). If there is an issue with DMT61M8SPS-13, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The DMT61M8SPS-13 part is unused and in its original packaging.

Return procedure for DMT61M8SPS-13:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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