Diodes Incorporated DMT62M7SPSW-13

Overview

DMT62M7SPSW-13 from Diodes Incorporated is a 60V N-channel enhancement-mode power MOSFET in PowerDI5060-8/SWP package, rated for 163A continuous drain current at TC = +25°C, with R_DS(ON) of 2.7 mΩ at V_GS = 10V and 100% production-tested UIS robustness. It serves as a high-current synchronous rectifier or primary-side switch in high-efficiency DC-DC converters.

For engineers reviewing the DMT62M7SPSW-13 datasheet, DMT62M7SPSW-13 pinout, DMT62M7SPSW-13 application, or DMT62M7SPSW-13 equivalent, key selection criteria include thermal resistance (R_θJC = 1.0°C/W), low-profile 1.1 mm height, and validated avalanche energy (E_AS = 202 mJ) for rugged power-stage design.

Technical Context

This MOSFET employs a trench-gate silicon process optimized for simultaneous low R_DS(ON) and fast switching dynamics, with C_iss = 4973 pF and Q_g = 68.7 nC at V_DD = 30V. Its dual-drain-source parallel die structure enables high current handling while maintaining tight R_DS(ON) distribution across temperature.

The PowerDI5060-8/SWP package integrates an exposed drain pad for direct thermal coupling to PCB copper, achieving R_θJC = 1.0°C/W and supporting 125 W power dissipation at T_C = +25°C. Gate threshold voltage (V_GS(TH) = 2–4 V) ensures reliable turn-on with standard 3.3 V or 5 V logic-level gate drivers.

Key Specifications

Pinout & Package

Package: PowerDI5060-8/SWP (Type UX), thermally enhanced surface-mount package with 1.1 mm maximum profile and exposed drain pad for low R_θJC. Molded green compound, RoHS-compliant matte tin finish over copper leadframe.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Compared with IXTP160N065T2 and SUD15N06-60-E3, DMT62M7SPSW-13 delivers superior board-level thermal performance (R_θJC = 1.0°C/W) and lowest R_DS(ON) in its class, making it optimal for high-current, low-profile, heatsinkless power conversion where PCB copper is the primary thermal path.

Availability

DMT62M7SPSW-13 is available at Aetrix Electronics and suitable for server VRMs, telecom DC-DC converters, and industrial motor drives requiring stable component supply, long-term lifecycle support, and traceable sourcing.

Supply support for DMT62M7SPSW-13 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design, manufacturing, and sales operations across Asia, Europe, and North America.

This device belongs to Diodes' Power MOSFET product line, engineered specifically for high-efficiency, high-current power conversion in computing, communications, and industrial systems where low R_DS(ON), ruggedness, and thermal integration are critical.

FAQ

What is the maximum junction temperature and how does it affect safe operating area?

The DMT62M7SPSW-13 has a rated junction temperature range of −55°C to +150°C. At T_J = 150°C, its R_DS(ON) increases to ~1.4× the 25°C value (≈3.8 mΩ), directly reducing the SOA boundary in the R_DS(ON)-limited region. The device's transient thermal resistance curve (Figure 13) confirms single-pulse capability up to 650 A for 10 µs at T_J = 150°C, provided PCB copper mass absorbs the pulse energy.

Is this MOSFET suitable for use with 3.3 V microcontroller gate drive?

No - the gate threshold voltage V_GS(TH) is specified from 2 V to 4 V, but full enhancement requires ≥8 V to achieve rated R_DS(ON). At V_GS = 3.3 V, typical R_DS(ON) exceeds 12 mΩ (per Figure 3), increasing conduction loss by >4×. A dedicated gate driver (e.g., TC4427A) supplying ≥10 V is required for optimal performance.

How does the PowerDI5060-8/SWP package compare to traditional SO-8 or TO-252 in thermal performance?

Unlike SO-8 (R_θJC ≈ 3.5°C/W) or TO-252 (R_θJC ≈ 2.0°C/W), the PowerDI5060-8/SWP uses an 8-pin drain array and large exposed pad to achieve R_θJC = 1.0°C/W - a 2–3× improvement. This allows 125 W dissipation at T_C = +25°C with no heatsink, whereas SO-8 would be limited to ~25 W under identical conditions.

Does the 100% UIS testing apply to every production unit or only sample lots?

Per Diodes' datasheet note and quality documentation, 100% Unclamped Inductive Switching (UIS) testing is performed on every unit during final test - not sampling. Each device is stressed with L = 0.2 mH, I_AS = 45 A, and E_AS = 202 mJ, ensuring guaranteed avalanche ruggedness without statistical qualification risk.