Diodes Incorporated DMT64M1LCG-13

Overview

DMT64M1LCG-13 from Diodes Incorporated is a 65V N-channel enhancement-mode MOSFET in V-DFN3333-8 (Type B) package, rated for 67.8A continuous drain current at T_C = +25°C, with R_DS(ON) = 5.4 mΩ @ V_GS = 10V and 7.3 mΩ @ V_GS = 4.5V. It serves as a high-efficiency load switch and synchronous rectifier in notebook battery power management systems.

For engineers reviewing the DMT64M1LCG-13 datasheet, DMT64M1LCG-13 pinout, DMT64M1LCG-13 application, or DMT64M1LCG-13 equivalent, key selection criteria include low R_DS(ON) at 4.5V gate drive, 100% production-tested UIS robustness, thermal resistance R_θJC = 3.0°C/W, and compatibility with compact DC-DC converter layouts requiring exposed-drain thermal performance.

Technical Context

This MOSFET employs a trench-gate silicon process optimized for low conduction loss while maintaining fast switching speed (t_D(ON) = 11.5 ns, t_F = 19.9 ns) and low gate charge (Q_g = 51.4 nC @ 10V). Its V-DFN3333-8 package features an exposed drain pad for direct thermal coupling to PCB copper.

The device supports operation across –55°C to +150°C junction temperature, with gate threshold voltage V_GS(TH) tightly specified (1.3–2.5 V), and includes integrated body diode with V_SD = 0.7–1.2 V @ I_S = 1 A. It is fully RoHS-compliant, halogen- and antimony-free, and qualified per J-STD-020 Level 1 moisture sensitivity.

Key Specifications

Pinout & Package

V-DFN3333-8 (Type B) package with 3.3 mm × 3.3 mm footprint, 0.8 mm nominal height, and exposed drain pad on bottom surface for thermal and electrical connection.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel load switch and synchronous rectifier applications.

Compared with DMT64M1LCG-13, DMT64M1LPS-13 trades thermal performance for assembly flexibility, while DMTH6016LPS-13 offers lower R_DS(ON) at reduced voltage rating and incompatible pin mapping-neither is drop-in, making DMT64M1LCG-13 optimal for space-constrained 48V–65V load switching where thermal density matters most.

Availability

DMT64M1LCG-13 is available at Aetrix Electronics and suitable for notebook battery protection circuits, USB-C power delivery load switching, and high-efficiency synchronous rectification requiring stable component supply, tight R_DS(ON) consistency, and AEC-Q200-aligned manufacturing traceability.

Supply support for DMT64M1LCG-13 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design, manufacturing, and test facilities across Asia and the Americas.

The DMT64M1LCG belongs to Diodes' PowerMOS™ portfolio, engineered specifically for high-current, low-voltage power management in portable and computing applications where thermal efficiency and board space are critical constraints.

FAQ

What is the maximum safe operating junction temperature for DMT64M1LCG-13?

The absolute maximum junction temperature is +150°C, as specified in the Absolute Maximum Ratings table. Operation above this limit risks permanent parametric shift or catastrophic failure. Derating is required above +125°C ambient when using the FR-4 board layout with 1-inch² copper; thermal simulation using R_θJC = 3.0°C/W and measured power dissipation is recommended for precise margining.

Can DMT64M1LCG-13 be used as a high-side switch with 3.3V gate drive?

No-its gate threshold voltage range is 1.3–2.5 V, but R_DS(ON) is not characterized below V_GS = 4.5 V. At 3.3 V, conduction is incomplete and R_DS(ON) may exceed 20 mΩ, causing excessive heating. Use only with ≥4.5 V gate drive; for 3.3 V control, add a gate driver such as the AP2125K or ZXGD3003E6.

Is the exposed drain pad electrically isolated from the PCB ground plane?

No-the exposed drain pad is the MOSFET's drain terminal and must be connected directly to the high-side power net (e.g., battery+ or 48V rail). It is not isolated; routing it to ground would cause immediate short-circuit failure. Thermal vias beneath the pad must connect only to inner-layer power planes matching the drain potential.

Does DMT64M1LCG-13 require external gate resistors for EMI control?

Yes-while not mandatory for basic functionality, a 5–10 Ω series gate resistor is recommended to dampen ringing caused by interaction between gate charge (Q_g = 51.4 nC) and PCB trace inductance. This reduces radiated emissions and prevents false turn-on due to dv/dt coupling, especially in high-frequency (>300 kHz) DC-DC applications.