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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Diodes Incorporated DMT64M1LCG-7

Name: DMT64M1LCG-7
Brand: Diodes Incorporated
SKU: DMT64M1LCG-7
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: DMT64M1LCG-7

Manufacturer:: Diodes Incorporated

Category:: FETs, MOSFETs

Package:: 8-PowerVDFN

Datasheet:: DMT64M1LCG-7.pdf

Description:: MOSFET BVDSS: 61V~100V V-DFN3333

Quantity:: RFQ Add To RFQ list

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Product details

Overview

DMT64M1LCG-7 from Diodes Incorporated is a 65V N-channel enhancement-mode MOSFET in a V-DFN3333-8 (Type B) package, optimized for high-efficiency load switching and synchronous rectification in notebook battery power management. It delivers R_DS(ON) = 5.4 mΩ @ V_GS = 10 V, 67.8 A continuous drain current at T_C = +25°C, and features 100% production-tested UIS robustness.

For engineers reviewing the DMT64M1LCG-7 datasheet, DMT64M1LCG-7 pinout, DMT64M1LCG-7 application, or DMT64M1LCG-7 equivalent, key selection criteria include low R_DS(ON) at 4.5 V gate drive, fast switching (t_F = 19.9 ns), thermal resistance R_θJC = 3.0°C/W, and compliance with AEC-Q101 requirements for automotive-grade reliability.

Technical Context

This MOSFET employs a trench-gate silicon process to achieve ultra-low on-resistance while maintaining controlled gate charge (Q_g = 51.4 nC @ 10 V) and minimized reverse transfer capacitance (C_rss = 91 pF). Its V-DFN3333-8 package integrates an exposed drain pad for direct thermal path to PCB copper, enabling high-current operation with low junction-to-case thermal resistance.

The device supports both 10 V and 4.5 V logic-level gate drive, with V_GS(TH) ranging from 1.3 V to 2.5 V and stable R_DS(ON) performance across -55°C to +150°C. Its body diode exhibits low forward voltage (V_SD = 0.7–1.2 V @ I_S = 1 A) and fast reverse recovery (t_RR = 44.8 ns), making it suitable for high-frequency DC-DC converter topologies.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	65 V - Withstands up to 65 V drain-source voltage, supporting 48 V bus and 60 V transient applications.
R_DS(ON)	5.4 mΩ @ V_GS = 10 V - Enables <1 W conduction loss at 40 A, critical for high-current load switches.
I_D (continuous)	67.8 A @ T_C = +25°C - Supports high-power notebook battery discharge paths without external heatsinking.
Q_g	51.4 nC @ V_GS = 10 V - Low gate charge reduces driver power and enables efficient 500 kHz+ switching in buck converters.
R_θJC	3.0°C/W - Allows rapid heat transfer from junction to PCB via exposed drain pad, improving thermal headroom.
t_F	19.9 ns - Fast fall time minimizes switching losses during high-side or synchronous rectifier turn-off.
E_AS	206 mJ - Confirmed avalanche energy rating ensures ruggedness against inductive switching stress in DC-DC stages.

Pinout & Package

Package: V-DFN3333-8 (Type B), 3.3 mm × 3.3 mm × 0.8 mm profile with exposed drain pad (Pin 8) for thermal and electrical connection to PCB ground plane.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 3, 4, 5, 6, 7	Source	Internally paralleled source terminals; low-inductance connection to system ground or return path.
8	Drain	Exposed copper pad - primary thermal path and high-current output node; must be soldered to ≥1 in² 2 oz copper pour.
Gate	Control input	Single terminal (Pin 1 side, see top view marking); requires ≤10 V drive for full enhancement; gate threshold 1.3–2.5 V.

Key Features

Feature	Design Value
100% UIS tested	Guarantees minimum 20.3 A/206 mJ avalanche capability per unit, eliminating field failure risk in unclamped inductive loads.
Low R_DS(ON) @ 4.5 V	7.3 mΩ enables direct compatibility with 3.3 V/5 V microcontroller GPIOs without level-shifting in portable power switches.
Green packaging	Halogen- and antimony-free, RoHS 3 compliant (Br+Cl <1500 ppm, Sb <1000 ppm), meeting strict environmental mandates for consumer electronics.
Fast body diode	t_RR = 44.8 ns and Q_RR = 54.0 nC reduce dead-time losses and EMI in synchronous buck and OR-ing configurations.
Thermal optimization	R_θJC = 3.0°C/W allows >50 W power dissipation with minimal ΔT when mounted on 1 in² thermal pad, simplifying thermal design.

Applications

Notebook Battery Protection Circuit

High-Efficiency DC-DC Buck Converter

Use Scenario: Isolating main battery from system rail during fault conditions or deep sleep states in ultrabooks and 2-in-1 laptops.

IC Role / Device Role / Timing Role: High-side load switch controlling 20–40 A battery discharge path; activated/deactivated by EC or PMIC GPIO.

Use Value: 5.4 mΩ R_DS(ON) limits voltage drop to <210 mV at 40 A, preserving battery runtime and reducing thermal load on compact PCBs.

Use Scenario: Synchronous rectification in 12 V → 1.2 V/60 A CPU core VRMs for modern mobile processors.

IC Role / Device Role / Timing Role: Low-side switch in buck topology; commutates with high-side FET at 500–1000 kHz.

Use Value: 19.9 ns t_F and 91 pF C_rss minimize shoot-through risk and switching loss, improving efficiency by ≥1.2% over legacy 8 mΩ devices.

USB-C Power Delivery Load Switch

Automotive Body Control Module (BCM) Power Distribution

Use Scenario: Enabling/disabling 20 V/5 A USB-C PD power path in docking stations and portable monitors.

IC Role / Device Role / Timing Role: Bidirectional load switch managing power flow between source and sink; body diode supports reverse current.

Use Value: V_SD = 0.7–1.2 V and t_RR = 44.8 ns ensure low-loss reverse conduction and fast polarity transition during PD contract renegotiation.

Use Scenario: Controlling 12 V accessory loads (e.g., LED lighting, HVAC actuators) in AEC-Q101-qualified BCMs.

IC Role / Device Role / Timing Role: High-reliability power switch rated for automotive transients (ISO 7637-2 Pulse 5a); driven by CAN-linked MCU.

Use Value: 65 V V_DSS and 206 mJ E_AS withstand 120 V load-dump spikes; PPAP-capable manufacturing ensures supply continuity for Tier-1 programs.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
DMT64M1LPS-7	Same die, but in PSOF-8 package with gull-wing leads; R_θJA = 62°C/W (vs. 49°C/W for DMT64M1LCG-7).	Preferred for through-hole prototyping or legacy wave-solder assembly; less suitable for space-constrained mobile designs.	Select when manual rework or mixed-technology boards require leaded packages; avoid for high-density portable PCBs.
DMTH6016LPS-13	60 V rating, 1.6 mΩ R_DS(ON) @ 10 V, higher Q_g (105 nC); larger PSOF-8 footprint.	Better for <60 V industrial SMPS where ultra-low R_DS(ON) outweighs size and cost; not rated for 65 V transients.	Choose only if system max V_DS ≤ 60 V and thermal budget permits higher gate drive power; not drop-in compatible.

Compared with DMT64M1LPS-7 and DMTH6016LPS-13, DMT64M1LCG-7 uniquely balances 65 V rating, 5.4 mΩ on-resistance, 3.0°C/W thermal resistance, and 3.3 mm × 3.3 mm footprint-making it optimal for thermally constrained, high-current portable power switches where board area and transient margin are critical.

Availability

DMT64M1LCG-7 is available at Aetrix Electronics and suitable for notebook battery protection circuits, high-efficiency DC-DC buck converters, and USB-C power delivery load switches requiring stable component supply and consistent parametric performance across production lots.

Supply support for DMT64M1LCG-7 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design, manufacturing, and sales operations across Asia, Europe, and the Americas.

This MOSFET belongs to Diodes' PowerMOS™ portfolio, engineered specifically for high-efficiency power conversion and load switching in portable computing, consumer power adapters, and automotive body electronics.

FAQ

What is the maximum safe operating temperature for DMT64M1LCG-7?

The device is rated for junction temperatures from –55°C to +150°C. For reliable long-term operation, keep T_J ≤ 135°C under steady-state conditions. With R_θJC = 3.0°C/W and a well-designed 1 in² thermal pad, it sustains 67.8 A at T_C = +25°C; derate linearly above that ambient.

Does DMT64M1LCG-7 support 3.3 V logic-level gate drive?

Yes-it has a gate threshold voltage range of 1.3 V to 2.5 V and delivers R_DS(ON) = 7.3 mΩ at V_GS = 4.5 V. While fully enhanced at 10 V, it conducts usable current (ID > 10 A) with 3.3 V drive, though R_DS(ON) rises to ~12 mΩ-verify thermal margin in your layout.

Is DMT64M1LCG-7 qualified for automotive applications?

It meets AEC-Q101 stress test requirements and is manufactured in IATF 16949-certified facilities. Diodes offers PPAP documentation and change control for automotive programs; contact their automotive team to obtain qualification reports and part-specific PPAP packages.

How should the exposed drain pad be connected on the PCB?

The exposed drain pad (Pin 8) must be soldered to a dedicated, unbroken copper pour of ≥1 in² using 2 oz copper. Use ≥9 thermal vias (0.3 mm diameter, spaced ≤1 mm apart) connecting to inner-layer ground planes. Avoid splitting the pad or routing traces underneath it to preserve thermal and electrical integrity.

DMT64M1LCG-7 Specifications

Product attributes: Attribute value

Manufacturer:: Diodes Incorporated

Series:: -

Package/Case:: 8-PowerVDFN

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 65 V

Current - Continuous Drain (Id) @ 25°C:: 16.7A (Ta), 67.8A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 5.4mOhm @ 20A, 10V

Vgs(th) (Max) @ Id:: 2.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 51.4 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 2626 pF @ 30 V

FET Feature:: -

Power Dissipation (Max):: 1.2W (Ta)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: V-DFN3333-8 (Type B)

DMT64M1LCG-7 FAQ

1.How can I place an order for DMT64M1LCG-7 through Aetrix?

Please submit a Request for Quotation (RFQ) for DMT64M1LCG-7 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for DMT64M1LCG-7 reliable?

The price and inventory of DMT64M1LCG-7 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMT64M1LCG-7 is usually 5 days.

3.What payment methods are accepted for DMT64M1LCG-7?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMT64M1LCG-7 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for DMT64M1LCG-7?

DMT64M1LCG-7 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your DMT64M1LCG-7 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for DMT64M1LCG-7?

For technical support, including DMT64M1LCG-7 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMT64M1LCG-7 requirements.

6.How does Aetrix verify that DMT64M1LCG-7 is sourced from the original manufacturer or authorized distributors?

All DMT64M1LCG-7 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMT64M1LCG-7 meets industry standards.

7.What is the process for return or replacement of DMT64M1LCG-7?

All DMT64M1LCG-7 units undergo pre-shipment inspection (PSI). If there is an issue with DMT64M1LCG-7, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The DMT64M1LCG-7 part is unused and in its original packaging.

Return procedure for DMT64M1LCG-7:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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