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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Diodes Incorporated DMT64M1LPSW-13

Name: DMT64M1LPSW-13
Brand: Diodes Incorporated
SKU: DMT64M1LPSW-13
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: DMT64M1LPSW-13

Manufacturer:: Diodes Incorporated

Category:: FETs, MOSFETs

Package:: 8-PowerTDFN

Datasheet:: DMT64M1LPSW-13.pdf

Description:: MOSFET BVDSS: 61V~100V POWERDI50

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Product details

Overview

DMT64M1LPSW-13 from Diodes Incorporated is a 65V N-channel enhancement-mode MOSFET in PowerDI5060-8 (SWP) package, optimized for high-frequency switching and synchronous rectification. It delivers R_DS(ON) = 4.4 mΩ @ V_GS = 10 V, 81.7 A continuous drain current at T_C = +25°C, and low Q_g = 51.4 nC - enabling high-efficiency DC-DC converters in server power supplies and telecom infrastructure.

For engineers reviewing the DMT64M1LPSW-13 datasheet, DMT64M1LPSW-13 pinout, DMT64M1LPSW-13 application, or DMT64M1LPSW-13 equivalent, key selection criteria include its wettable flank package for automated optical inspection, 100% production-tested UIS robustness, and thermal resistance R_θJC = 2.84°C/W for high-power-density board layouts.

Technical Context

This MOSFET employs a trench-gate silicon process to achieve ultra-low on-resistance while maintaining fast switching speed (t_F = 19.9 ns) and low input capacitance (C_iss = 2626 pF). Its gate threshold voltage (V_GS(TH) = 1.3–2.5 V) supports both 4.5 V and 10 V drive logic, enabling compatibility with standard PWM controllers and microcontroller GPIOs.

The device integrates a low-V_SD body diode (0.8–1.2 V @ I_S = 20 A) with t_RR = 44.8 ns and Q_RR = 54.0 nC, making it suitable for hard-switched and synchronous rectifier topologies where reverse recovery losses must be minimized.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	65 V - Supports 48 V input bus systems with 30% derating margin against transients.
R_DS(ON)	4.4 mΩ @ V_GS = 10 V - Enables <1.2 W conduction loss at 80 A, critical for >95% efficiency in 12 V/48 V output stages.
I_D (T_C = 25°C)	81.7 A - Rated for high-current synchronous buck phases without external heatsinking when mounted on exposed pad PCBs.
Q_g	51.4 nC @ V_GS = 10 V - Reduces gate drive power and enables operation up to 1 MHz with moderate gate driver strength.
R_θJC	2.84°C/W - Allows direct thermal coupling to system heatsink via soldered drain pad, supporting >40 W dissipation in compact layouts.
E_AS	206 mJ - Withstands single-pulse inductive energy in motor drives and hot-swap circuits without avalanche failure.

Pinout & Package

Package: PowerDI5060-8 (SWP), surface-mount, thermally enhanced with exposed drain pad and wettable flanks for AOI-compatible solder joints.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 3, 4, 5, 6, 7, 8 (Drain)	Power Drain / Heat Sink Node	All eight pins are internally connected to the drain terminal and exposed copper pad - provides low-inductance, high-current path and primary thermal conduction route to PCB.
G (Gate)	Control Input	Single gate terminal located at Pin 3 per top-view marking; requires <20 V max gate-source voltage and benefits from low-impedance drive to minimize switching losses.
S (Source)	Reference Node / Return Path	Source terminals are Pins 1 and 8 - used as local ground reference for gate drive and current sensing; low-inductance layout essential for stable high-speed switching.

Key Features

Feature	Design Value
100% UIS tested in production	Guarantees avalanche ruggedness up to I_AS = 20.3 A and E_AS = 206 mJ - eliminates need for external snubbers in inductive load switching.
Wettable flank leads	Enables automated optical inspection of solder fillets on all eight drain terminals - improves manufacturing yield in high-reliability power assembly lines.
Low Q_gd/Q_g ratio	Q_gd = 14.4 nC / Q_g = 51.4 nC ≈ 28% - suppresses Miller-induced shoot-through and improves hard-switching stability at high dV/dt.
Halogen- and antimony-free "Green" construction	Meets EU RoHS 3 and automotive environmental standards (<900 ppm Br+Cl, <1000 ppm Sb) - qualified for industrial and Tier-1 automotive subsystems.

Applications

Server VRM Phase Legs

Telecom 48 V Intermediate Bus Converters

Use Scenario: High-current, multiphase buck converter delivering 50–100 A at 0.8–1.2 V to CPU/GPU cores.

IC Role / Device Role / Timing Role: High-side synchronous rectifier MOSFET operating at 300–600 kHz with precise dead-time control.

Use Value: 4.4 mΩ R_DS(ON) and 2.84°C/W R_θJC reduce conduction loss and junction temperature rise by >15°C vs. comparable 5×6 mm devices, extending VRM lifetime.

Use Scenario: Isolated or non-isolated 48 V-to-12 V step-down converter in 19-inch rack power shelves.

IC Role / Device Role / Timing Role: Primary-side switch in active-clamp forward or secondary-side synchronous rectifier in LLC resonant topology.

Use Value: Low C_oss (905 pF) and fast t_F (19.9 ns) minimize switching loss at 300–500 kHz, improving full-load efficiency by 0.8–1.2% over legacy 8 mΩ parts.

Industrial Motor Drive Half-Bridge

Automotive DC-DC Converter (12 V/48 V Bi-directional)

Use Scenario: 20–30 A BLDC inverter stage in HVAC blowers or pump controllers.

IC Role / Device Role / Timing Role: Low-side switch in half-bridge configuration with bootstrap gate drive and integrated freewheeling diode conduction.

Use Value: Body diode t_RR = 44.8 ns and Q_RR = 54.0 nC limit reverse recovery spikes, reducing EMI and eliminating need for external Schottky catch diodes.

Use Scenario: Bi-directional 48 V/12 V converter in mild-hybrid vehicle architectures (e.g., BSG integration).

IC Role / Device Role / Timing Role: Synchronous rectifier in bidirectional buck-boost stage, conducting in both directions with minimal forward drop.

Use Value: V_SD = 0.8–1.2 V at 20 A and low R_DS(ON) asymmetry between quadrant 1 and quadrant 3 ensure balanced conduction loss and thermal distribution during regenerative braking.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
DMT6006LPS-13	R_DS(ON) = 5.2 mΩ @ 10 V; lower ID (70 A); same PowerDI5060-8 package	Slightly higher conduction loss limits use in >75 A continuous phases	Select when cost sensitivity outweighs 0.8 mΩ R_DS(ON) gain and thermal margin is sufficient.
IPB050N06N3 G	60 V rating; R_DS(ON) = 5.0 mΩ @ 10 V; TO-263-7 package; higher R_θJC = 3.2°C/W	Larger footprint and inferior thermal performance require larger heatsinks or lower current derating	Prefer only if existing TO-263 layout reuse is mandatory and peak current stays below 65 A.

Compared with DMT6006LPS-13 and IPB050N06N3 G, DMT64M1LPSW-13 offers the lowest R_DS(ON) and best thermal resistance in its class, making it optimal for space-constrained, high-efficiency 65 V systems where junction temperature control and conduction loss dominate design trade-offs.

Availability

DMT64M1LPSW-13 is available at Aetrix Electronics and suitable for server VRMs, telecom intermediate bus converters, and industrial motor drives requiring stable component supply, long-term lifecycle support, and traceable sourcing.

Supply support for DMT64M1LPSW-13 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design, manufacturing, and sales operations across Asia, Europe, and North America.

This MOSFET belongs to Diodes' PowerDI® portfolio, engineered specifically for high-efficiency, high-current power conversion in computing, communications, and industrial equipment where thermal performance and reliability under repetitive stress are critical.

FAQ

What is the maximum safe operating junction temperature for DMT64M1LPSW-13?

The device is rated for TJ = –55°C to +150°C. Continuous operation above +150°C risks permanent degradation of the silicon die and bond wires. Thermal design must ensure junction temperature remains ≤150°C under worst-case ambient, power dissipation, and airflow conditions - verified using R_θJC = 2.84°C/W and measured case temperature.

Does DMT64M1LPSW-13 support 4.5 V gate drive in synchronous rectifier applications?

Yes - R_DS(ON) is specified at 6.3 mΩ @ V_GS = 4.5 V and ID = 25 A, and V_GS(TH) ranges from 1.3 V to 2.5 V. This ensures reliable turn-on with standard 4.5 V logic-level drivers and controller outputs, though conduction loss increases ~43% versus 10 V drive at full load.

Is the PowerDI5060-8 (SWP) package compatible with standard reflow profiles for lead-free soldering?

Yes - the device uses matte tin annealed over copper leadframe and complies with JEDEC J-STD-020 moisture sensitivity Level 1. It supports standard Pb-free reflow profiles (peak 260°C, 20–40 sec above 217°C) without preconditioning, provided PCB pad layout follows Diodes' recommended footprint for thermal and mechanical reliability.

Can DMT64M1LPSW-13 replace older DMT6006LPS-13 in existing designs?

Yes - identical PowerDI5060-8 (SWP) package, pinout, and footprint allow drop-in replacement. The DMT64M1LPSW-13 offers lower R_DS(ON) (4.4 mΩ vs. 5.2 mΩ) and higher ID (81.7 A vs. 70 A), improving efficiency and thermal headroom without layout changes or gate drive modifications.

DMT64M1LPSW-13 Specifications

Product attributes: Attribute value

Manufacturer:: Diodes Incorporated

Series:: -

Package/Case:: 8-PowerTDFN

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 65 V

Current - Continuous Drain (Id) @ 25°C:: 21.8A (Ta), 81.7A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 4.4mOhm @ 30A, 10V

Vgs(th) (Max) @ Id:: 2.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 51.4 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 2626 pF @ 30 V

FET Feature:: -

Power Dissipation (Max):: 3.14W (Ta), 44W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount, Wettable Flank

Supplier Device Package:: PowerDI5060-8 (Type UX)

DMT64M1LPSW-13 FAQ

1.How can I place an order for DMT64M1LPSW-13 through Aetrix?

Please submit a Request for Quotation (RFQ) for DMT64M1LPSW-13 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for DMT64M1LPSW-13 reliable?

The price and inventory of DMT64M1LPSW-13 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMT64M1LPSW-13 is usually 5 days.

3.What payment methods are accepted for DMT64M1LPSW-13?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMT64M1LPSW-13 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for DMT64M1LPSW-13?

DMT64M1LPSW-13 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your DMT64M1LPSW-13 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for DMT64M1LPSW-13?

For technical support, including DMT64M1LPSW-13 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMT64M1LPSW-13 requirements.

6.How does Aetrix verify that DMT64M1LPSW-13 is sourced from the original manufacturer or authorized distributors?

All DMT64M1LPSW-13 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMT64M1LPSW-13 meets industry standards.

7.What is the process for return or replacement of DMT64M1LPSW-13?

All DMT64M1LPSW-13 units undergo pre-shipment inspection (PSI). If there is an issue with DMT64M1LPSW-13, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The DMT64M1LPSW-13 part is unused and in its original packaging.

Return procedure for DMT64M1LPSW-13:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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