Diodes Incorporated DMT64M8LCG-13

Overview

DMT64M8LCG-13 from Diodes Incorporated is a 60V N-channel enhancement-mode MOSFET in a V-DFN3333-8 (Type B) package, optimized for high-efficiency load switching and synchronous rectification. It delivers 4.8 mΩ R_DS(ON) at V_GS = 10 V, supports 77.8 A continuous drain current at T_C = +25°C, and features ESD-protected gate and 100% production-tested UIS robustness. It is deployed in notebook battery power management systems where low conduction loss and fast switching are critical.

For engineers reviewing the DMT64M8LCG-13 datasheet, DMT64M8LCG-13 pinout, DMT64M8LCG-13 application, or DMT64M8LCG-13 equivalent, key selection criteria include R_DS(ON) at 4.5 V, thermal resistance R_θJC = 2.5 °C/W, body diode forward voltage (V_SD = 0.7–1.2 V), gate charge Q_g = 47.5 nC at 10 V, and V-DFN3333-8 footprint compatibility with space-constrained DC-DC converter layouts.

Technical Context

This MOSFET employs a trench-gate silicon process to achieve low R_DS(ON) while maintaining controlled gate charge (Q_g = 47.5 nC) and low Crss (75 pF), enabling efficient hard-switching in buck converters and OR-ing circuits. Its 100% UIS-tested ruggedness ensures reliable operation under inductive turn-off stress common in notebook power rails.

The device integrates an intrinsic body diode with t_RR = 41 ns and Q_RR = 53 nC, supporting synchronous rectifier operation without external Schottky diodes. Gate threshold voltage (V_GS(TH) = 1.3–2.4 V) enables stable 3.3 V and 5 V gate drive compatibility in portable system power stages.

Key Specifications

Pinout & Package

V-DFN3333-8 (Type B) package with exposed drain pad (D) on bottom surface for thermal and electrical connection. Molded green compound, NiPdAu-plated terminals, moisture sensitivity level 1.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Compared with DMT6006LPS-13 and SiR626DP-T1-GE3, DMT64M8LCG-13 offers the best balance of ultra-low R_DS(ON), compact V-DFN3333-8 footprint, and production-validated UIS robustness-making it optimal for space- and thermal-constrained notebook and USB-C PD applications where gate drive voltage is ≥4.5 V.

Availability

DMT64M8LCG-13 is available at Aetrix Electronics and suitable for notebook battery management, USB-C power delivery load switching, and industrial 24 V DC-DC converters requiring stable component supply across multi-year production cycles.

Supply support for DMT64M8LCG-13 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design, manufacturing, and sales operations across Asia, Europe, and North America.

This MOSFET belongs to Diodes' PowerMOS™ portfolio, engineered specifically for high-current, low-voltage power conversion and load switching in portable computing, consumer electronics, and industrial power supplies.

FAQ

What is the maximum continuous drain current for DMT64M8LCG-13 at 70°C case temperature?

The maximum continuous drain current is 62.2 A at T_C = +70°C with V_GS = 10 V, as specified in the Absolute Maximum Ratings table. This value assumes proper thermal management via the exposed drain pad soldered to ≥1 inch² of 2 oz copper on FR-4.

Does DMT64M8LCG-13 require a gate resistor for safe operation?

A gate resistor (typically 3.3 Ω) is recommended to dampen ringing and control dV/dt during switching, especially in high-frequency DC-DC converters. The device's R_g = 0.76 Ω internal gate resistance and Q_gd = 12.5 nC make external gate resistance critical for EMI suppression and shoot-through prevention.

Can DMT64M8LCG-13 be used in automotive applications?

While not pre-qualified to AEC-Q101, this part is manufactured in IATF 16949-certified facilities and supports automotive-grade change control. Customers requiring formal qualification should contact Diodes Incorporated for PPAP documentation and test reports before deployment in infotainment or body electronics.

How does the body diode performance affect synchronous rectifier use?

The body diode has V_SD = 0.7–1.2 V at I_S = 1 A and t_RR = 41 ns, enabling efficient freewheeling in buck converters. Its Q_RR = 53 nC is low enough to minimize reverse recovery loss, but external Schottky clamping may still be needed in >1 MHz designs to suppress voltage overshoot.