Diodes Incorporated DMT64M8LCG-7

Overview

DMT64M8LCG-7 from Diodes Incorporated is a 60V N-channel enhancement-mode MOSFET in V-DFN3333-8 (Type B) package, rated for 77.8A continuous drain current at T_C = +25°C with R_DS(ON) = 4.8 mΩ @ V_GS = 10V and 6.5 mΩ @ V_GS = 4.5V. It features ESD-protected gate, 100% production-tested UIS, and low input capacitance (C_iss = 2664 pF), optimized for notebook battery power management and high-efficiency DC-DC converter synchronous rectification.

For engineers reviewing the DMT64M8LCG-7 datasheet, DMT64M8LCG-7 pinout, DMT64M8LCG-7 application, or DMT64M8LCG-7 equivalent, key selection criteria include its 2.5°C/W junction-to-case thermal resistance, 47.5 nC total gate charge at 10V, fast switching (t_F = 18.3 ns), and validated performance in load-switch and power-management circuits requiring <1.2V body diode forward voltage at 1A.

Technical Context

This MOSFET employs a trench-gate silicon process to achieve ultra-low R_DS(ON) while maintaining robust avalanche capability (E_AS = 111 mJ, I_AS = 27.2 A). Its gate threshold voltage (V_GS(TH) = 1.3–2.4 V) ensures reliable turn-on with standard logic-level drivers, and its normalized R_DS(ON) variation remains ≤1.8× across –55°C to +150°C junction temperature.

The device integrates an intrinsic body diode with t_RR = 41 ns and Q_RR = 53 nC, enabling efficient reverse recovery in synchronous buck topologies. Its V-DFN3333-8 (Type B) package features an exposed drain pad for thermal conduction and NiPdAu-plated terminals compliant with MIL-STD-202 solderability requirements.

Key Specifications

Pinout & Package

V-DFN3333-8 (Type B) package with 3.3 mm × 3.3 mm footprint, 0.8 mm nominal height, and exposed drain pad on bottom side for thermal and electrical connection. Terminals are NiPdAu-plated copper lead-frame; moisture sensitivity level is J-STD-020 Level 1.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Compared with DMT64M8LCG-7, DMT6006LPS-13 trades thermal performance for manufacturability, while SiR626DP-T1-GE3 improves R_DS(ON) at the cost of verified ruggedness and gate drive efficiency-making DMT64M8LCG-7 optimal for thermally dense, transient-prone portable power systems.

Availability

DMT64M8LCG-7 is available at Aetrix Electronics and suitable for notebook battery management, USB-C power delivery load switching, and high-efficiency DC-DC converter synchronous rectification requiring stable component supply, consistent parametric performance, and long-term lifecycle support.

Supply support for DMT64M8LCG-7 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design, manufacturing, and sales operations across Asia, Europe, and the Americas.

The DMT64M8LCG belongs to Diodes' Power MOSFET product line, engineered specifically for high-current, low-voltage power management in portable computing and industrial power systems where thermal density and transient robustness are critical.

FAQ

What is the maximum safe operating junction temperature for DMT64M8LCG-7?

The absolute maximum junction temperature is +150°C, and the device is characterized for R_DS(ON) and switching parameters across –55°C to +150°C. Thermal design must ensure steady-state T_J remains below this limit using the 2.5°C/W R_θJC path and appropriate PCB copper area per Diodes' recommended pad layout.

Does DMT64M8LCG-7 support 3.3V gate drive in practice?

No-its V_GS(TH) min is 1.3V, but R_DS(ON) rises sharply below 4.5V: at V_GS = 3.3V, typical R_DS(ON) exceeds 12 mΩ. The datasheet specifies guaranteed performance only at V_GS = 4.5V and 10V; 3.3V drive is not recommended for production designs.

How is the gate protected against ESD damage during PCB assembly?

The device integrates on-chip gate protection diodes, verified by ±10 µA gate leakage at ±20V and passing HBM testing per JEDEC JESD22-A114. No external gate resistors or TVS devices are required for standard SMT reflow or handling, though grounding straps and ionized air remain best practices.

Can DMT64M8LCG-7 be used in parallel configurations for higher current?

Yes-its positive temperature coefficient for R_DS(ON) (normalized increase with T_J) enables inherent current sharing. However, layout symmetry (matched trace inductance/resistance) and individual gate drive routing are mandatory; paralleling more than two units requires thermal derating per Figure 12 SOA curves.