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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Diodes Incorporated DMT64M8LSS-13

Name: DMT64M8LSS-13
Brand: Diodes Incorporated
SKU: DMT64M8LSS-13
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: DMT64M8LSS-13

Manufacturer:: Diodes Incorporated

Category:: FETs, MOSFETs

Package:: 8-SOIC (0.154", 3.90mm Width)

Datasheet:: DMT64M8LSS-13.pdf

Description:: MOSFET BVDSS: 41V~60V SO-8 T&R 2

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Product details

Overview

DMT64M8LSS-13 from Diodes Incorporated is a 60V N-channel enhancement-mode MOSFET in SO-8 package, rated for 17.0A continuous drain current at V_GS = 10V, with R_DS(ON) as low as 3.9 mΩ (typ), optimized for high-efficiency DC-DC converters and synchronous rectification in power management systems.

For engineers reviewing the DMT64M8LSS-13 datasheet, DMT64M8LSS-13 pinout, DMT64M8LSS-13 application, or DMT64M8LSS-13 equivalent, key selection criteria include its 57.5°C/W thermal resistance (J-A, enhanced layout), 100% production-tested UIS robustness, low gate charge (47.5 nC @ 10V), and SO-8 footprint compatibility with industry-standard PCB layouts.

Technical Context

This MOSFET employs a trench-gate silicon process to achieve ultra-low R_DS(ON) while maintaining fast switching speed (t_R = 9.1 ns, t_F = 18.3 ns) and low output capacitance (C_oss = 955 pF). Its gate threshold voltage (1.3–2.3 V) supports 4.5V logic-level drive, enabling direct interface with standard microcontroller GPIOs.

The integrated body diode exhibits 41 ns reverse recovery time and 53 nC Q_RR, supporting high-frequency synchronous rectification. Thermal design is supported by validated R_θJC = 6.5°C/W and transient thermal resistance curves for pulse-width-dependent power dissipation modeling.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	60 V - Withstands up to 60V drain-source blocking voltage, suitable for 48V bus and PoE++ applications.
R_DS(ON)	3.9 mΩ (typ) @ V_GS = 10V - Minimizes conduction loss in high-current paths (e.g., 17A load yields <1.1W I²R loss).
Q_g	47.5 nC @ V_GS = 10V - Enables efficient gate driving with moderate-current drivers; reduces switching loss in 500 kHz–1 MHz converters.
t_R/t_F	9.1 ns / 18.3 ns - Supports clean, low-overshoot switching transitions critical for EMI control in compact power stages.
E_AS	111 mJ - Confirmed avalanche energy rating ensures reliability under inductive turn-off stress without external snubbers.
R_θJA	57.5°C/W (enhanced layout) - Enables 2.2W continuous dissipation on FR-4 with 1-inch² copper pour, simplifying thermal design.

Pinout & Package

Package: SO-8 (Surface-Mount, 8-pin small-outline), molded green plastic (UL 94V-0), matte tin-plated copper leadframe, moisture sensitivity level 3.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 3, 4	Drain (D)	Internally paralleled pins provide low-inductance, high-current path to PCB drain copper; requires thermal pad connection.
5, 6, 7	Source (S)	Three-source terminals reduce source inductance and improve current sharing in high-di/dt operation.
8	Gate (G)	Single gate input with ESD protection (HBM >2kV); low R_g = 0.76 Ω enables fast turn-on/turn-off control.

Key Features

Feature	Design Value
100% UIS tested in production	Guarantees avalanche ruggedness across full temperature range without derating-critical for unclamped inductive loads.
Low R_DS(ON) @ 4.5V	6.9 mΩ max enables efficient operation with 5V or 3.3V logic-level gate drive, eliminating need for gate boosters.
ESD-protected gate	HBM-rated >2 kV per JESD22-A114; prevents field failure during handling and board assembly.
Green, RoHS-compliant construction	Halogen- and antimony-free (<900 ppm Br/Cl, <1000 ppm Sb); meets automotive and industrial environmental compliance mandates.

Applications

Server VRMs

USB-C PD Adapters

Use Scenario: High-density 48V-to-12V/5V buck converter in server motherboard voltage regulator modules.

IC Role / Device Role / Timing Role: Primary synchronous rectifier switch operating at 600 kHz with 17A peak current.

Use Value: 3.9 mΩ R_DS(ON) reduces conduction loss by ~35% vs. typical 6.5 mΩ alternatives, improving full-load efficiency from 92.1% to 93.4%.

Use Scenario: Secondary-side synchronous rectifier in 100W USB-C Power Delivery adapter.

IC Role / Device Role / Timing Role: Low-voltage-side switch in LLC + SR topology, driven by dedicated SR controller.

Use Value: 41 ns t_RR and 53 nC Q_RR minimize body diode conduction loss during dead-time, reducing thermal stress on secondary FET.

Industrial PLC I/O Modules

Automotive Body Control Units

Use Scenario: 24V DC-DC step-down supply for isolated sensor interfaces and digital I/O drivers.

IC Role / Device Role / Timing Role: High-side power switch controlling 10A load banks with PWM dimming or sequencing.

Use Value: 111 mJ E_AS withstands inductive kickback from solenoid/relay coils without external clamping diodes.

Use Scenario: Load switch for interior lighting and HVAC actuators in 12V vehicle electrical architecture.

IC Role / Device Role / Timing Role: Protected high-side driver with integrated overtemperature and short-circuit shutdown.

Use Value: SO-8 package with 150°C T_J(max) and AEC-Q101 qualification path supports under-hood ambient temperatures up to 105°C.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRF7470PBF	R_DS(ON) = 4.5 mΩ @ 10V; higher C_iss (3200 pF) and Q_g (55 nC); no production UIS test.	Less suitable for high-frequency (>1 MHz) or avalanche-prone circuits due to lower ruggedness margin.	Prefer DMT64M8LSS-13 where UIS reliability or sub-10 ns rise time is required.
DMN6075SFG-13	Same SO-8 package; R_DS(ON) = 7.5 mΩ @ 10V; lower ID (12.5A); higher R_θJA (70°C/W).	Better suited for space-constrained, lower-power designs where thermal headroom is limited but peak current <13A.	Choose DMT64M8LSS-13 when ≥14.5A at 4.5V drive or <6 mΩ R_DS(ON) is mandatory.

Compared with IRF7470PBF and DMN6075SFG-13, DMT64M8LSS-13 delivers superior conduction efficiency (3.9 mΩ), verified avalanche robustness, and faster switching-making it optimal for high-current, high-reliability 48V/24V power stages where thermal and dynamic performance are co-critical.

Availability

DMT64M8LSS-13 is available at Aetrix Electronics and suitable for server VRMs, USB-C PD adapters, and industrial PLC I/O modules requiring stable component supply, long-term lifecycle support, and traceable green-sourcing compliance.

Supply support for DMT64M8LSS-13 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, specializing in high-performance power management, signal integrity, and protection solutions for industrial, computing, and consumer markets.

The DMT64M8LSS belongs to Diodes' high-efficiency power MOSFET product line, engineered specifically for high-current, high-frequency DC-DC conversion and synchronous rectification in space- and thermally-constrained applications.

FAQ

What is the maximum continuous drain current for DMT64M8LSS-13 at 70°C ambient?

At T_A = +70°C with enhanced layout (1-inch² copper pour), the maximum continuous drain current is 13.6A at V_GS = 10V. This is derived from the 2.2W power dissipation rating and R_θJA = 57.5°C/W, ensuring junction temperature remains within the -55°C to +150°C operating range under steady-state conditions.

Does DMT64M8LSS-13 support 3.3V logic-level gate drive?

No-its gate threshold voltage (V_GS(TH)) ranges from 1.3V to 2.3V, but R_DS(ON) is not specified below V_GS = 4.5V. At 3.3V, the device operates in weak inversion with significantly elevated on-resistance (>20 mΩ), causing excessive conduction loss; it is rated for reliable switching only at ≥4.5V gate drive.

Is the SO-8 package thermally enhanced?

Yes-the SO-8 package uses a copper leadframe with exposed drain pads (pins 1–4) that must be soldered to a large PCB copper area. With a 1-inch² copper pour, R_θJA improves from 89.5°C/W to 57.5°C/W, enabling 2.2W continuous power dissipation versus only 1.4W on standard FR-4.

What does "100% UIS tested" mean for real-world reliability?

Every unit undergoes unclamped inductive switching stress testing at I_AS = 27.2A and E_AS = 111 mJ during production. This validates single-pulse avalanche capability without parameter shift, ensuring robustness against inductive transients in motor drives, relay coils, and hot-swap circuits-eliminating need for external protection components.

DMT64M8LSS-13 Specifications

Product attributes: Attribute value

Manufacturer:: Diodes Incorporated

Series:: -

Package/Case:: 8-SOIC (0.154", 3.90mm Width)

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 60 V

Current - Continuous Drain (Id) @ 25°C:: 13.6A (Ta)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 5mOhm @ 20A, 10V

Vgs(th) (Max) @ Id:: 2.3V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 47.5 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 2664 pF @ 30 V

FET Feature:: -

Power Dissipation (Max):: 1.4W (Ta)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: 8-SO

DMT64M8LSS-13 FAQ

1.How can I place an order for DMT64M8LSS-13 through Aetrix?

Please submit a Request for Quotation (RFQ) for DMT64M8LSS-13 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for DMT64M8LSS-13 reliable?

The price and inventory of DMT64M8LSS-13 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMT64M8LSS-13 is usually 5 days.

3.What payment methods are accepted for DMT64M8LSS-13?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMT64M8LSS-13 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for DMT64M8LSS-13?

DMT64M8LSS-13 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your DMT64M8LSS-13 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for DMT64M8LSS-13?

For technical support, including DMT64M8LSS-13 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMT64M8LSS-13 requirements.

6.How does Aetrix verify that DMT64M8LSS-13 is sourced from the original manufacturer or authorized distributors?

All DMT64M8LSS-13 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMT64M8LSS-13 meets industry standards.

7.What is the process for return or replacement of DMT64M8LSS-13?

All DMT64M8LSS-13 units undergo pre-shipment inspection (PSI). If there is an issue with DMT64M8LSS-13, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The DMT64M8LSS-13 part is unused and in its original packaging.

Return procedure for DMT64M8LSS-13:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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