Diodes Incorporated DMT67M8LCG-13

Overview

DMT67M8LCG-13 from Diodes Incorporated is a 60V N-channel enhancement-mode MOSFET in V-DFN3333-8 (Type B) package, optimized for low R_DS(ON) (5.7 mΩ @ V_GS = 10 V) and fast switching in high-efficiency load switch and notebook battery management applications. It supports 64.6 A continuous drain current at T_C = +25°C and features ESD-protected gate, 100% UIS-tested robustness, and green RoHS-compliant construction.

For engineers reviewing the DMT67M8LCG-13 datasheet, DMT67M8LCG-13 pinout, DMT67M8LCG-13 application, or DMT67M8LCG-13 equivalent, key selection criteria include R_DS(ON) at 4.5 V (8.1 mΩ), thermal resistance R_θJC (3.5 °C/W), body diode forward voltage (0.8–1.2 V), gate charge Q_g (37.5 nC @ 10 V), and safe operating area under pulsed conditions.

Technical Context

This MOSFET employs a trench-gate silicon process to achieve low on-resistance while maintaining controlled gate charge and fast switching transitions. Its V-DFN3333-8 (Type B) package integrates an exposed drain pad for low thermal resistance (R_θJC = 3.5 °C/W) and high power dissipation capability (P_D = 2.2 W with 1-inch copper pad).

The device is characterized for operation across –55°C to +150°C junction temperature, with gate threshold voltage V_GS(TH) tightly specified (1.2–2.5 V) and normalized R_DS(ON) variation ≤2× over full temperature range. Body diode recovery parameters (t_RR = 26.9 ns, Q_RR = 56.8 nC) support synchronous rectification in DC-DC converters without external snubbing.

Key Specifications

Pinout & Package

V-DFN3333-8 (Type B) is a 3.3 mm × 3.3 mm, 0.8 mm profile, thermally enhanced dual-side wettable flank package with exposed drain pad. Pin 1 is marked by notch or dot; terminals are NiPdAu-plated copper leadframe, solderable per MIL-STD-202.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Compared with DMT67M8LCG-13, the -7 variant offers identical performance with different reel quantity, while DMN67M8LH-13 trades compact thermal performance for legacy SO-8 compatibility-making the -13 optimal for space- and efficiency-critical notebook and VRM designs.

Availability

DMT67M8LCG-13 is available at Aetrix Electronics and suitable for notebook battery protection, synchronous rectification, and industrial load switch applications requiring stable component supply, long-term lifecycle support, and green manufacturing compliance.

Supply support for DMT67M8LCG-13 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, specializing in high-efficiency power management, signal integrity, and protection solutions for consumer, industrial, and automotive markets.

The DMT67M8LCG belongs to Diodes' high-performance TrenchMOS™ power MOSFET product line, engineered specifically for ultra-low R_DS(ON) and fast switching in compact, thermally demanding portable and computing power systems.

FAQ

What is the maximum continuous drain current for DMT67M8LCG-13 at T_A = +70°C?

The maximum continuous drain current is 12.8 A when mounted on an FR-4 PCB with 2 oz copper and minimum recommended pad layout (Note 6). This rating reflects thermal derating due to ambient temperature rise and limited PCB heat spreading-designers must verify actual board layout thermal performance using the provided R_θJA = 57 °C/W value.

Does DMT67M8LCG-13 support logic-level gate drive?

Yes. With V_GS(TH) ranging from 1.2 V to 2.5 V and R_DS(ON) = 8.1 mΩ at V_GS = 4.5 V, the device fully turns on using standard 3.3 V or 5 V microcontroller outputs. Gate drive design should account for Q_g = 20 nC (at 4.5 V) to ensure adequate slew rate and minimize switching losses.

How is the exposed drain pad electrically connected in the V-DFN3333-8 package?

All pins 1–7 and the bottom-exposed metal pad are internally shorted to the Drain (D) terminal. The pad must be soldered to a large copper pour on the PCB for both electrical connection and thermal conduction. No isolation or separate routing is required-the entire underside serves as the primary drain node and heatsink interface.

Is DMT67M8LCG-13 qualified for automotive applications?

No. While the device operates from –55°C to +150°C and meets AEC-Q101 stress test conditions in some internal evaluations, it is not officially AEC-Q101 qualified or automotive-grade certified. Diodes Incorporated lists it for industrial and computing applications only; automotive designs require explicitly qualified parts such as the DMT67M8LQ series.