Diodes Incorporated DMT67M8LCG-7

Overview

DMT67M8LCG-7 from Diodes Incorporated is a 60V N-channel enhancement-mode MOSFET in a V-DFN3333-8 (Type B) package, optimized for high-efficiency load switching and synchronous rectification in notebook battery power management. It delivers 5.7 mΩ R_DS(ON) at V_GS = 10 V, 64.6 A continuous drain current at T_C = +25°C, and features ESD-protected gate, 100% UIS-tested robustness, and low 2130 pF input capacitance.

For engineers reviewing the DMT67M8LCG-7 datasheet, DMT67M8LCG-7 pinout, DMT67M8LCG-7 application, or DMT67M8LCG-7 equivalent, key selection criteria include its 60V V_DSS, 4.5V/10V dual-threshold R_DS(ON) performance (8.1 mΩ @ 4.5 V), thermal resistance of 3.5°C/W (junction-to-case), and suitability for compact DC-DC converter high-side/low-side switch nodes requiring <1 mm profile and high pulse-current capability (256 A IDM).

Technical Context

This MOSFET employs a trench-gate silicon process to achieve ultra-low on-resistance while maintaining fast switching (t_D(ON) = 5.5 ns, t_F = 10.8 ns) and low gate charge (Q_g = 37.5 nC @ 10 V). Its integrated body diode supports synchronous rectifier operation with 26.9 ns reverse recovery time and 56.8 nC Q_RR.

The device operates across –55°C to +150°C junction temperature, with normalized R_DS(ON) variation ≤1.8× over that range and gate threshold voltage stable between 1.2 V and 2.5 V. Thermal design is enabled by an exposed drain pad and validated R_θJC = 3.5°C/W under standard soldering conditions.

Key Specifications

Pinout & Package

Package: V-DFN3333-8 (Type B), 3.3 mm × 3.3 mm × 0.8 mm profile with exposed drain pad for thermal and electrical connection. RoHS-compliant NiPdAu-plated copper leadframe.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Compared with DMT67M8LCG-7, DMT67M8LFG-7 requires board revision but offers identical electrical specs, while SI2308DS-T1-GE3 trades current capacity and ruggedness for ultra-small size-making it viable only in non-critical, low-current signal-path roles.

Availability

DMT67M8LCG-7 is available at Aetrix Electronics and suitable for notebook battery protection circuits, USB-C power delivery load switching, synchronous rectification in compact DC-DC converters, and industrial 24 V hot-swap controllers requiring stable component supply and long-term lifecycle support.

Supply support for DMT67M8LCG-7 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design, manufacturing, and sales operations across Asia, Europe, and North America.

The DMT67M8LCG belongs to Diodes' PowerMOS™ portfolio, engineered specifically for high-density, high-efficiency power conversion in portable computing and interface power management applications where low-profile packaging and robust transient handling are mandatory.

FAQ

What is the maximum safe operating temperature for DMT67M8LCG-7?

The DMT67M8LCG-7 has a specified junction temperature range of –55°C to +150°C. Its absolute maximum rating is TJ = +150°C, and sustained operation above this value risks permanent parametric shift or bond-wire failure. Thermal design must ensure junction temperature remains below 150°C under worst-case ambient, power dissipation, and PCB copper area conditions, using the validated R_θJC = 3.5°C/W value with proper soldering to the exposed drain pad.

Does DMT67M8LCG-7 support gate drive from a 3.3 V microcontroller?

No-DMT67M8LCG-7 is not fully enhanced at 3.3 V. Its gate threshold voltage ranges from 1.2 V to 2.5 V, but R_DS(ON) is only guaranteed at V_GS = 4.5 V (8.1 mΩ) and V_GS = 10 V (5.7 mΩ). At 3.3 V, typical R_DS(ON) exceeds 15 mΩ, causing excessive conduction loss and thermal stress. A level shifter or 5 V gate driver is required for reliable operation.

Can DMT67M8LCG-7 be used in parallel configurations?

Yes, but with strict layout and biasing controls. The device exhibits positive temperature coefficient for R_DS(ON) (normalized resistance increases with temperature), supporting current sharing. However, mismatched gate drive routing inductance or unequal thermal coupling can cause imbalance. Use individual gate resistors (≤5 Ω), symmetrical PCB traces, and shared thermal pad to ensure <10% current deviation at full load.

Is the exposed drain pad electrically connected to the internal drain terminals?

Yes-the exposed drain pad (pins 1–3 and 5–8 in V-DFN3333-8 Type B) is directly bonded to the silicon die's drain metallization. It serves both as the primary thermal path and the main current-carrying terminal. PCB layout must connect this pad to a low-impedance copper plane; floating or undersized connections will degrade R_θJC, increase temperature rise, and compromise UIS performance.