Diodes Incorporated DMT67M8LCGQ-13

Overview

DMT67M8LCGQ-13 from Diodes Incorporated is a 60V N-channel enhancement-mode MOSFET in V-DFN3333-8 (Type B) package, qualified to AEC-Q101 for automotive use. It delivers R_DS(ON) = 5.7 mΩ @ V_GS = 10 V, 64.6 A continuous drain current at T_C = +25°C, and supports synchronous rectification in DC-DC converters with fast switching (t_F = 10.8 ns) and ESD-protected gate.

For engineers reviewing the DMT67M8LCGQ-13 datasheet, DMT67M8LCGQ-13 pinout, DMT67M8LCGQ-13 application, or DMT67M8LCGQ-13 equivalent, key selection criteria include its AEC-Q101 qualification, low R_DS(ON) at 4.5 V (8.1 mΩ), 100% UIS-tested robustness, thermal resistance R_θJC = 3.5°C/W, and suitability for high-efficiency power management in automotive ECUs and ADAS subsystems.

Technical Context

This MOSFET employs a trench-gate silicon process optimized for low conduction and switching losses in high-frequency automotive power stages. Its gate threshold voltage (V_GS(TH) = 1.2–2.5 V) enables reliable turn-on with standard 3.3 V or 5 V logic drivers, while the integrated body diode (V_SD = 0.8–1.2 V @ I_S = 13.5 A) supports bidirectional current handling in synchronous buck topologies.

The device features a thermally enhanced exposed-drain pad and is characterized for operation across –55°C to +150°C junction temperature. Its dynamic parameters-including C_iss = 2130 pF, Q_g = 37.5 nC @ V_GS = 10 V, and t_D(OFF) = 22.1 ns-support precise timing control in phase-shifted and multiphase converter designs requiring tight dead-time management.

Key Specifications

Pinout & Package

V-DFN3333-8 (Type B) package with exposed drain pad on bottom surface for thermal and electrical connection. Dimensions: 3.3 mm × 3.3 mm × 0.8 mm (max), moisture sensitivity level 1 per J-STD-020.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel automotive MOSFET applications.

Compared with STL135N6F7AG and IXTQ60N10P, DMT67M8LCGQ-13 offers optimal balance of AEC-Q101 compliance, compact V-DFN3333-8 footprint, and verified UIS ruggedness-making it the preferred choice for volume automotive power modules where space, reliability, and supply-chain traceability are critical.

Availability

DMT67M8LCGQ-13 is available at Aetrix Electronics and suitable for automotive power management, ADAS subsystems, and electric power steering requiring stable component supply, full PPAP documentation, and long-term lifecycle assurance.

Supply support for DMT67M8LCGQ-13 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design, manufacturing, and sales operations across Asia, Europe, and North America.

The DMT67M8LCGQ belongs to Diodes' AEC-Q101-qualified automotive MOSFET product line, engineered specifically for high-reliability power conversion in engine control, chassis, and safety-critical vehicle subsystems.

FAQ

What is the maximum continuous drain current at T_C = +70°C?

The DMT67M8LCGQ-13 supports 51.7 A continuous drain current at T_C = +70°C with V_GS = 10 V, as specified in the Absolute Maximum Ratings table. This value reflects thermal derating due to reduced heat dissipation capability at elevated case temperatures and must be validated against actual PCB copper area and airflow conditions.

Does this MOSFET require external gate resistors for automotive EMI compliance?

While not mandatory, a 5–10 Ω gate resistor is recommended to dampen ringing caused by parasitic inductance in high-dI/dt automotive layouts. The device's low gate resistance (R_g = 0.6 Ω) and dual gate pads help minimize oscillation, but empirical tuning is required to meet CISPR-25 Class 5 radiated emission limits in final system-level testing.

Is the body diode suitable for reverse recovery in synchronous rectification?

Yes-the body diode has t_RR = 26.9 ns and Q_RR = 56.8 nC at I_F = 20 A and di/dt = 300 A/µs, enabling efficient synchronous rectification in buck converters up to 1 MHz. However, dead-time must be precisely controlled to avoid cross-conduction, especially at light loads where diode conduction dominates.

Can DMT67M8LCGQ-13 be used in parallel configurations?

Yes-its positive temperature coefficient for R_DS(ON) (normalized R_DS(ON) increases with junction temperature) enables inherent current sharing when paralleled. For stable operation, match gate drive loop inductance and use Kelvin source connections to minimize imbalance; typical derating is 15% per additional device beyond two units.