Diodes Incorporated DMT67M8LCGQ-7

Overview

DMT67M8LCGQ-7 from Diodes Incorporated is a 60V N-channel enhancement-mode MOSFET in V-DFN3333-8 (Type B) package, qualified to AEC-Q101 and PPAP-capable for automotive use. It delivers 5.7 mΩ R_DS(ON) at V_GS = 10 V, 64.6 A continuous drain current at T_C = +25°C, and features ESD-protected gate, 100% UIS-tested robustness, and low input capacitance (C_iss = 2130 pF). It serves as a high-efficiency synchronous rectifier in 12 V/48 V automotive DC-DC converters.

For engineers reviewing the DMT67M8LCGQ-7 datasheet, DMT67M8LCGQ-7 pinout, DMT67M8LCGQ-7 application, or DMT67M8LCGQ-7 equivalent, key selection criteria include its AEC-Q101 qualification, R_DS(ON) performance at 4.5 V (8.1 mΩ), thermal resistance (R_θJC = 3.5 °C/W), and suitability for high-current, space-constrained automotive power stages.

Technical Context

This MOSFET employs trench-gate silicon technology optimized for low conduction loss and fast switching in high-frequency automotive power conversion. Its 60 V BVDSS rating supports 48 V system architectures, while the 3.5 °C/W junction-to-case thermal resistance enables efficient heat transfer to PCB copper planes or heatsinks.

The device integrates an intrinsic body diode with 26.9 ns reverse recovery time and 56.8 nC Q_RR, enabling reliable operation in synchronous rectification topologies. Gate charge parameters (Q_g = 37.5 nC at V_GS = 10 V) are balanced to minimize drive loss without compromising turn-on/turn-off speed (t_r = 6.8 ns, t_f = 10.8 ns).

Key Specifications

Pinout & Package

V-DFN3333-8 (Type B) package with exposed drain pad on bottom surface for thermal and electrical connection. 3.3 mm × 3.3 mm footprint, 0.8 mm nominal height, lead-free NiPdAu-plated terminals, moisture sensitivity level 1.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel 60 V automotive MOSFET applications.

Compared with DMTH6016LPSQ-13, DMT67M8LCGQ-7 saves 58% board area with only 12% higher R_DS(ON), making it optimal for dense 48 V DC-DC modules; versus IPB60R065P7SAUMA1, it offers guaranteed AEC-Q101 compliance and plug-and-play gate drive at the cost of voltage rating - essential for functional safety-certified EPS and ADAS power rails.

Availability

DMT67M8LCGQ-7 is available at Aetrix Electronics and suitable for automotive 48 V DC-DC converters, electric power steering (EPS) motor drivers, and ADAS camera power supplies requiring stable component supply across extended vehicle lifecycles.

Supply support for DMT67M8LCGQ-7 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design, manufacturing, and test facilities certified to IATF16949:2016.

This part belongs to Diodes' Automotive Power MOSFET product line, engineered specifically for AEC-Q101-compliant high-current switching in 12 V, 24 V, and 48 V vehicle electrical architectures.

FAQ

What is the maximum continuous drain current at TC = +70°C?

The DMT67M8LCGQ-7 supports 51.7 A continuous drain current at case temperature +70°C when operated with V_GS = 10 V, as specified in the Absolute Maximum Ratings table. This value reflects thermal derating based on R_θJC = 3.5 °C/W and T_J(max) = 150°C, assuming proper PCB copper thermal relief and solder coverage on the exposed drain pad.

Is the gate threshold voltage stable over temperature?

Yes - V_GS(TH) ranges from 1.2 V to 2.5 V at 25°C and shifts predictably with junction temperature, staying within 1.0–2.8 V from –55°C to +150°C (Figure 8). This stability ensures consistent turn-on behavior across automotive ambient conditions without requiring adaptive gate drive compensation.

Can this MOSFET be used in parallel configurations?

Yes - its positive temperature coefficient of R_DS(ON) (Figure 6) enables inherent current sharing when paralleled. Designers must match gate drive loop inductance and ensure symmetrical PCB layout; typical applications include >100 A EPS inverters where two DMT67M8LCGQ-7 devices share load with <8% current imbalance at full rating.

Does the device require external gate resistors for automotive EMI compliance?

Yes - a 3–5 Ω series gate resistor is recommended to dampen ringing caused by 256 A pulsed drain current and 0.6 Ω intrinsic gate resistance. Combined with controlled slew rate (dV/dt ≈ 12 V/ns), this meets CISPR 25 Class 5 conducted emission limits in 12 V/48 V power stages without additional ferrite beads.