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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Diodes Incorporated DMT67M8LK3-13

Name: DMT67M8LK3-13
Brand: Diodes Incorporated
SKU: DMT67M8LK3-13
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: DMT67M8LK3-13

Manufacturer:: Diodes Incorporated

Category:: FETs, MOSFETs

Package:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Datasheet:: DMT67M8LK3-13.pdf

Description:: MOSFET BVDSS: 41V~60V TO252 T&R

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Product details

Overview

DMT67M8LK3-13 from Diodes Incorporated is a 60V N-channel enhancement-mode MOSFET in TO252 (DPAK) package, rated for 87A continuous drain current at TC = +25°C, with R_DS(ON) of 7 mΩ @ V_GS = 10V and 10 mΩ @ V_GS = 4.5V, optimized for high-efficiency DC-DC converters and LED backlighting power stages.

For engineers reviewing the DMT67M8LK3-13 datasheet, DMT67M8LK3-13 pinout, DMT67M8LK3-13 application, or DMT67M8LK3-13 equivalent, key selection criteria include its low gate charge (Q_g = 37.5 nC @ 10V), robust UIS rating (23.7 A avalanche current), and thermally efficient R_θJC = 1.4 °C/W junction-to-case thermal resistance.

Technical Context

This MOSFET employs trench-gate silicon technology to achieve low R_DS(ON) while maintaining fast switching performance via minimized Q_g (37.5 nC) and Q_gd (9.5 nC). Its ESD-protected gate and 100% production-tested UIS ensure reliability in inductive load switching.

The device operates across –55°C to +150°C junction temperature range, with gate threshold voltage V_GS(TH) tightly specified at 1.2–2.5 V and body diode forward voltage V_SD = 0.7–1.2 V at I_S = 1 A, supporting synchronous rectification and reverse recovery–sensitive topologies.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	60 V - Maximum drain-source blocking voltage for 48V bus and automotive 36V nominal systems.
R_DS(ON)	7 mΩ @ V_GS = 10V - Enables <1.4 W conduction loss at 87A, critical for high-current power stages.
I_D (continuous)	87 A @ T_C = +25°C - Supports high-power buck converter output stages without forced airflow.
Q_g	37.5 nC @ V_GS = 10V - Reduces gate drive power and enables >500 kHz switching with standard drivers.
R_θJC	1.4 °C/W - Allows direct thermal coupling to heatsink or PCB copper, enabling compact thermal design.
E_AS	84.5 mJ - Confirmed avalanche energy rating ensures ruggedness in unclamped inductive turn-off events.
V_GS(TH)	1.2–2.5 V - Ensures reliable turn-on with 3.3V or 5V logic-level gate drivers.

Pinout & Package

Package: TO252 (DPAK), surface-mount, exposed drain pad for thermal and electrical connection. Molded plastic case with UL 94V-0 flammability rating and matte tin–annealed copper leadframe.

Pin/Terminal	Circuit Role	Design Meaning
Drain (D)	Main current path from source to load	Connected to large copper area on PCB for heat dissipation and low-inductance high-current routing.
Source (S)	Reference node for gate control and current return	Provides low-impedance return path; ties to ground plane or power rail reference in half-bridge configurations.
Gate (G)	Control terminal for channel modulation	ESD-protected input requiring <100 pF gate loop inductance to minimize ringing during fast switching.

Key Features

Feature	Design Value
Low R_DS(ON) @ 4.5V	10 mΩ enables full-load operation with 5V gate drive, eliminating need for level-shifters in many industrial SMPS.
100% UIS tested	Each unit validated for 23.7 A avalanche current and 84.5 mJ energy, ensuring field reliability in motor drives and solenoid controls.
Low Q_gd/Q_g ratio	9.5/37.5 = 0.25 reduces Miller effect, improving hard-switching stability and reducing gate driver stress.
Green, RoHS-compliant construction	Halogen- and antimony-free molding compound (<900 ppm Br/Cl, <1000 ppm Sb) meets automotive and industrial environmental mandates.

Applications

DC-DC Buck Converter

LED Backlight Driver

Use Scenario: High-current step-down regulator supplying 12V/20A to display panel logic and backlight strings.

IC Role / Device Role / Timing Role: Primary high-side switch in synchronous buck topology operating at 300–600 kHz.

Use Value: 7 mΩ R_DS(ON) limits conduction loss to ≤1.4 W; low Q_g enables clean 500 kHz switching with minimal gate drive loss.

Use Scenario: Constant-current LED string driver for automotive instrument clusters or commercial signage.

IC Role / Device Role / Timing Role: PWM-controlled high-side switch modulating current through 4–8 series-connected LEDs.

Use Value: Robust UIS rating withstands inductive kickback from LED inductor; 150°C max T_J supports sealed enclosure operation.

Industrial Motor Control

Hot-Swap Power Distribution

Use Scenario: Half-bridge leg in 24V BLDC motor gate driver for HVAC blowers or pumps.

IC Role / Device Role / Timing Role: Low-side switching element handling peak currents up to 75A during commutation.

Use Value: 10 mΩ @ 4.5V allows direct microcontroller GPIO drive; body diode V_SD = 0.7 V minimizes freewheeling loss.

Use Scenario: Inrush-limited hot-swap FET in 48V telecom or server power entry module.

IC Role / Device Role / Timing Role: Controlled turn-on switch with soft-start via gate resistor network.

Use Value: Tight V_GS(TH) distribution (1.2–2.5 V) ensures predictable turn-on timing; R_θJC = 1.4 °C/W supports thermal foldback during fault conditions.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STL110N6F7	60V, 110A, R_DS(ON) = 4.2 mΩ @ 10V, Q_g = 52 nC - higher current but larger gate charge and TO263 package.	Requires larger PCB footprint and higher gate drive power; better suited for lower-frequency, higher-current UPS inverters.	Select when >100A continuous current is required and thermal mass permits TO263 mounting.
IRL6772PBF	60V, 75A, R_DS(ON) = 7.5 mΩ @ 10V, Q_g = 29 nC - lower Q_g but higher R_DS(ON), TO220AB package.	Through-hole mounting only; lacks production UIS testing and green compliance per Diodes' spec.	Choose only for legacy through-hole designs where rework to surface-mount is impractical.

Compared with STL110N6F7 and IRL6772PBF, DMT67M8LK3-13 delivers optimal balance of low R_DS(ON), moderate Q_g, surface-mount TO252 packaging, and production-validated avalanche ruggedness-making it preferred for space-constrained, high-frequency DC-DC and LED driver designs.

Availability

DMT67M8LK3-13 is available at Aetrix Electronics and suitable for DC-DC converters, LED backlight drivers, and industrial motor control circuits requiring stable component supply, long-term lifecycle support, and RoHS-compliant manufacturing.

Supply support for DMT67M8LK3-13 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, specializing in high-reliability power management, signal integrity, and protection solutions for industrial, computing, and automotive markets.

DMT67M8LK3-13 belongs to Diodes' advanced trench-MOSFET product line, engineered specifically for high-efficiency, high-current switching in compact surface-mount power supplies and lighting systems.

FAQ

What is the maximum safe operating temperature for DMT67M8LK3-13?

The junction temperature must not exceed +150°C under any operating condition. At T_C = +25°C, the device supports 87A continuous current; derating is required above +25°C case temperature per the R_θJC = 1.4 °C/W thermal resistance and SOA curves in Figure 12 of DS43121 Rev. 2–2.

Can DMT67M8LK3-13 be driven directly by a 3.3V microcontroller GPIO?

No-its V_GS(TH) min is 1.2V, but full enhancement requires ≥4.5V for acceptable R_DS(ON). At 3.3V, R_DS(ON) exceeds 20 mΩ (per Figure 4), causing excessive conduction loss. A gate driver or level shifter is required for reliable 3.3V logic interface.

Is the body diode suitable for synchronous rectification?

Yes-the body diode has V_SD = 0.7–1.2 V at I_S = 1 A and t_RR = 26.9 ns, making it usable in synchronous buck topologies at ≤500 kHz. However, external Schottky diodes may be preferred for ultra-low-loss or >1 MHz operation due to lower forward voltage.

Does DMT67M8LK3-13 meet AEC-Q101 for automotive use?

No-the datasheet explicitly states that automotive-qualified versions require separate AEC-Q101 qualification, PPAP capability, and IATF 16949 manufacturing; DMT67M8LK3-13 is an industrial-grade part and is not certified to AEC-Q101 unless specifically ordered as an automotive variant (e.g., DMT67M8LK3Q).

DMT67M8LK3-13 Specifications

Product attributes: Attribute value

Manufacturer:: Diodes Incorporated

Series:: -

Package/Case:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 60 V

Current - Continuous Drain (Id) @ 25°C:: 87A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 7mOhm @ 20A, 10V

Vgs(th) (Max) @ Id:: 2.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 37.5 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 2130 pF @ 30 V

FET Feature:: -

Power Dissipation (Max):: 3.1W (Ta), 89.3W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: TO-252 (DPAK)

DMT67M8LK3-13 FAQ

1.How can I place an order for DMT67M8LK3-13 through Aetrix?

Please submit a Request for Quotation (RFQ) for DMT67M8LK3-13 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for DMT67M8LK3-13 reliable?

The price and inventory of DMT67M8LK3-13 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMT67M8LK3-13 is usually 5 days.

3.What payment methods are accepted for DMT67M8LK3-13?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMT67M8LK3-13 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for DMT67M8LK3-13?

DMT67M8LK3-13 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your DMT67M8LK3-13 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for DMT67M8LK3-13?

For technical support, including DMT67M8LK3-13 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMT67M8LK3-13 requirements.

6.How does Aetrix verify that DMT67M8LK3-13 is sourced from the original manufacturer or authorized distributors?

All DMT67M8LK3-13 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMT67M8LK3-13 meets industry standards.

7.What is the process for return or replacement of DMT67M8LK3-13?

All DMT67M8LK3-13 units undergo pre-shipment inspection (PSI). If there is an issue with DMT67M8LK3-13, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The DMT67M8LK3-13 part is unused and in its original packaging.

Return procedure for DMT67M8LK3-13:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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