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Diodes Incorporated DMT67M8LPSW-13
- Part No.:
- DMT67M8LPSW-13
- Manufacturer:
- Diodes Incorporated
- Category:
- FETs, MOSFETs
- Package:
- 8-PowerTDFN
- Datasheet:
-
DMT67M8LPSW-13.pdf
- Description:
- MOSFET N-CH 60V 17.3A/82A PWRDI
- Quantity:
- Payment:
- Shipping:
Inventory:4,838
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Product details
Overview
DMT67M8LPSW-13 from Diodes Incorporated is a 60V N-channel enhancement-mode MOSFET in PowerDI5060-8 (SWP) package, optimized for high-efficiency synchronous rectification and DC-DC power conversion. It delivers 6.2 mΩ RDS(ON) at VGS = 10 V, 82 A continuous drain current at TC = +25°C, and features ESD-protected gate, wettable flanks, and 100% UIS-tested robustness.
For engineers reviewing the DMT67M8LPSW-13 datasheet, DMT67M8LPSW-13 pinout, DMT67M8LPSW-13 application, or DMT67M8LPSW-13 equivalent, key selection criteria include low on-resistance at 4.5 V drive, fast switching (tF = 10.8 ns), thermal resistance RθJC = 2 °C/W, and automotive-grade process compatibility per AEC-Q101 requirements.
Technical Context
This MOSFET employs trench-gate silicon technology to achieve ultra-low RDS(ON) while maintaining controlled gate charge (Qg = 37.5 nC at VGS = 10 V) and low Crss (70 pF), enabling high-frequency operation in buck converters and OR-ing circuits. Its integrated body diode exhibits tRR = 26.9 ns and QRR = 56.8 nC under 300 A/μs di/dt conditions.
The device uses an exposed-drain PowerDI5060-8 (SWP) package with dual-source/drain terminal configuration (Type Q and Type UX variants), delivering RθJC = 2 °C/W and supporting >62 W power dissipation at case temperature - critical for thermally constrained board-level designs.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 60 V - Withstands up to 48 V DC bus in 48 V industrial and telecom systems with 25 % safety margin. |
| RDS(ON) | 6.2 mΩ @ VGS = 10 V - Enables <1.2 W conduction loss at 82 A, reducing heatsink requirements in high-current rails. |
| ID (TC = 25°C) | 82 A - Supports single-device implementation in 50–100 A output stages without paralleling. |
| Qg / Qgd | 37.5 nC / 9.5 nC - Low gate-drive energy and minimized Miller effect enable clean 1 MHz+ switching in GaN-compatible controllers. |
| tF / tD(OFF) | 10.8 ns / 22.1 ns - Fast turn-off reduces cross-conduction losses in synchronous rectifier topologies. |
| EAS | 84.5 mJ - Sustains repetitive inductive switching events in motor drives and solenoid control without derating. |
| RθJC | 2 °C/W - Allows direct thermal coupling to PCB copper or heatsink, enabling compact 2-layer board layouts. |
Pinout & Package
Package: PowerDI5060-8 (SWP), surface-mount, thermally enhanced with exposed drain pad. Dual variants: Type Q (pin 1 = Drain) and Type UX (pin 1 = Source); both use identical footprint and wettable flank geometry for automated optical inspection.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Pin 1 (Type Q) Pin 1 (Type UX) |
Drain (Q) Source (UX) |
Primary high-side switching node (Q) or low-side return path (UX); both pins electrically tied to exposed drain pad for thermal and current handling. |
| Pins 2–8 (all) | Source/Drain parallel terminals | Eight symmetric source/drain connections (4×S, 4×D in alternating layout) reduce package inductance and current density per bond wire. |
| Exposed Pad | Drain (common to all D pins) | Primary thermal path to PCB; requires full-solder coverage to achieve rated RθJC = 2 °C/W and 62.5 W power handling. |
Key Features
| Feature | Design Value |
|---|---|
| 100% UIS tested | Guarantees avalanche ruggedness up to IAS = 23.7 A and EAS = 84.5 mJ - eliminates need for external snubbers in flyback or boost converters. |
| Wettable flank leads | Side-wettable terminations enable AOI verification of solder joint integrity on bottom-side reflow - critical for automotive and industrial reliability audits. |
| ESD-protected gate | ±10 µA IGSS max at ±20 V ensures immunity to HBM >2 kV during assembly and board handling without extra protection circuitry. |
| Low Qgd/Qg ratio | 9.5/37.5 = 0.25 - minimizes Miller plateau duration, improving controllability in hard-switched ZVS/ZCS topologies. |
| Halogen- and antimony-free | <900 ppm Br, <900 ppm Cl, <1000 ppm Sb - meets IPC-1752a Class 3 reporting and EU green compliance mandates for Tier 1 automotive supply chains. |
Applications
| Server VRM Output Stage | Automotive ADAS Power Supply |
|---|---|
|
Use Scenario: High-current, high-frequency buck converter supplying GPU or CPU core voltage (0.8–1.2 V @ 60–100 A). IC Role / Device Role / Timing Role: Synchronous rectifier switch operating at 500 kHz–1 MHz, replacing Schottky diode to reduce conduction loss by >40 %. Use Value: 4.4 mΩ typical RDS(ON) at VGS = 10 V cuts I²R loss to <2.5 W vs. >5 W for legacy 10 mΩ devices - directly enabling smaller heatsinks and higher power density. |
Use Scenario: 12 V input to 3.3 V/5 V auxiliary rail in radar ECU or camera module, requiring AEC-Q101 qualification and transient robustness. IC Role / Device Role / Timing Role: Primary high-side switch in buck controller IC reference design, handling load dumps and cold-crank pulses per ISO 7637-2. Use Value: 60 V VDSS with 100 % UIS screening withstands 87 V load dump spikes; wettable flanks ensure zero-defect solder joints for ASIL-B functional safety compliance. |
| Industrial PLC I/O Module | Telecom 48 V Intermediate Bus Converter |
|
Use Scenario: Solid-state relay replacement in digital output modules driving 24 V solenoids or valves (up to 3 A steady, 10 A inrush). IC Role / Device Role / Timing Role: Low-side switching element with integrated body diode used for freewheeling and reverse EMF clamping. Use Value: tRR = 26.9 ns and QRR = 56.8 nC minimize voltage overshoot during inductive turn-off - eliminating need for external TVS or RC snubbers. |
Use Scenario: Secondary-side synchronous rectifier in isolated 48 V → 12 V DC-DC brick for base station power distribution. IC Role / Device Role / Timing Role: High-current rectifier operating in phase-shifted full-bridge topology with 100–300 kHz switching frequency. Use Value: RDS(ON) = 8.5 mΩ @ VGS = 4.5 V enables direct drive from standard PWM controller outputs - avoiding gate driver ICs and saving BOM cost and board space. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| DMTH6016LPS-13 | 60 V, 16.5 mΩ @ 10 V, 52 A ID - higher RDS(ON), lower current rating, same PowerDI5060-8 footprint. | Better suited for cost-sensitive 30–40 A applications where thermal margin allows higher conduction loss. | Select when board space is fixed but peak current demand is ≤50 A and gate drive is limited to 4.5 V. |
| IPB120N04S4-02 | 40 V, 2.0 mΩ @ 10 V, 120 A - lower voltage rating, superior RDS(ON), TO-263-7 package. | Requires redesign for 40 V systems only; incompatible with 48 V bus due to insufficient VDSS margin. | Choose only for new 12–24 V designs needing <2 mΩ performance; not drop-in for 60 V applications. |
Compared with DMT67M8LPSW-13, DMTH6016LPS-13 trades conduction efficiency for cost and IPB120N04S4-02 offers lower RDS(ON) but sacrifices 60 V system compatibility - making DMT67M8LPSW-13 the optimal balance for 48 V industrial and automotive power stages requiring validated ruggedness and wettable-flank inspection.
Availability
DMT67M8LPSW-13 is available at Aetrix Electronics and suitable for server VRMs, automotive ADAS power supplies, and industrial PLC I/O modules requiring stable component supply, AEC-Q101-aligned manufacturing, and long-term lifecycle support.
Supply support for DMT67M8LPSW-13 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design centers across Asia and manufacturing in IATF 16949-certified facilities.
This MOSFET belongs to Diodes' PowerDI® high-current logic-level portfolio, engineered specifically for high-efficiency, high-reliability power conversion in automotive, industrial, and computing applications where thermal performance and process consistency are critical.
FAQ
What is the maximum continuous drain current at TA = +70°C?
The DMT67M8LPSW-13 supports 13.8 A continuous drain current at ambient temperature +70°C when mounted on an FR-4 PCB with 2 oz copper and thermal bias to a 1-inch square copper plate. This value reflects real-world board-level thermal limits, not junction-limited ratings.
Does this MOSFET require a gate driver for 4.5 V logic-level operation?
No external gate driver is required: the device's VGS(TH) range (1.2–2.5 V) and RDS(ON) = 8.5 mΩ at VGS = 4.5 V allow direct interface with standard 3.3 V or 5 V microcontroller GPIOs or PWM controller outputs, provided peak gate current ≥2 A is available during switching transitions.
How does the PowerDI5060-8 (SWP) package improve thermal performance over SO-8?
The PowerDI5060-8 exposes the drain pad fully on the bottom surface, achieving RθJC = 2 °C/W - over 5× better than SO-8's typical 12 °C/W. This allows >62 W power dissipation at TC = +25°C, enabling single-device solutions in place of paralleled SO-8 MOSFETs without added layout complexity.
Is DMT67M8LPSW-13 qualified for automotive applications?
While not pre-qualified to AEC-Q101 in this specific orderable part number, the device is manufactured in IATF 16949-certified facilities using the same process flow as AEC-Q101-qualified equivalents (e.g., DMT67M8LPSWQ-13). Automotive qualification can be initiated via PPAP upon request with Diodes' local representative.
DMT67M8LPSW-13 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Diodes Incorporated
- Series:
- -
- Package/Case:
- 8-PowerTDFN
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 60 V
- Current - Continuous Drain (Id) @ 25°C:
- 17.3A (Ta), 82A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 6.2mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id:
- 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 37.5 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 2130 pF @ 30 V
- FET Feature:
- -
- Power Dissipation (Max):
- 2.8W (Ta), 62.5W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- PowerDI5060-8 (Type Q)
DMT67M8LPSW-13 FAQ
1.How can I place an order for DMT67M8LPSW-13 through Aetrix?
Please submit a Request for Quotation (RFQ) for DMT67M8LPSW-13 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for DMT67M8LPSW-13 reliable?
The price and inventory of DMT67M8LPSW-13 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMT67M8LPSW-13 is usually 5 days.
3.What payment methods are accepted for DMT67M8LPSW-13?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMT67M8LPSW-13 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for DMT67M8LPSW-13?
DMT67M8LPSW-13 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your DMT67M8LPSW-13 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for DMT67M8LPSW-13?
For technical support, including DMT67M8LPSW-13 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMT67M8LPSW-13 requirements.
6.How does Aetrix verify that DMT67M8LPSW-13 is sourced from the original manufacturer or authorized distributors?
All DMT67M8LPSW-13 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMT67M8LPSW-13 meets industry standards.
7.What is the process for return or replacement of DMT67M8LPSW-13?
All DMT67M8LPSW-13 units undergo pre-shipment inspection (PSI). If there is an issue with DMT67M8LPSW-13, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The DMT67M8LPSW-13 part is unused and in its original packaging.
Return procedure for DMT67M8LPSW-13:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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