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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Diodes Incorporated DMT67M8LSS-13

Name: DMT67M8LSS-13
Brand: Diodes Incorporated
SKU: DMT67M8LSS-13
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: DMT67M8LSS-13

Manufacturer:: Diodes Incorporated

Category:: FETs, MOSFETs

Package:: 8-SOIC (0.154", 3.90mm Width)

Datasheet:: DMT67M8LSS-13.pdf

Description:: MOSFET BVDSS: 41V~60V SO-8 T&R 2

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Product details

Overview

DMT67M8LSS-13 from Diodes Incorporated is a 60V N-channel enhancement-mode MOSFET in SO-8 package, optimized for high-efficiency power management with 6.6 mΩ R_DS(ON) @ 10 V_GS, 14.8 A continuous drain current at +25°C, and fast switching (t_D(ON) = 5.5 ns). It serves as a synchronous rectifier in DC-DC converters for server VRMs and telecom power supplies.

For engineers reviewing the DMT67M8LSS-13 datasheet, DMT67M8LSS-13 pinout, DMT67M8LSS-13 application, or DMT67M8LSS-13 equivalent, key selection criteria include R_DS(ON) at 4.5 V_GS (8.4 mΩ), body diode recovery charge (Q_RR = 56.8 nC), thermal resistance (R_θJA = 58 °C/W on 1-inch copper), and SO-8 lead-free compliance.

Technical Context

This MOSFET employs a trench-gate process to achieve low on-resistance while maintaining robust avalanche capability (E_AS = 84.5 mJ) and 100% production-tested UIS. Its gate threshold voltage (V_GS(TH) = 1.3–3.0 V) enables compatibility with 3.3 V and 5 V logic-level drive.

The device integrates an ESD-protected gate and features low input capacitance (C_iss = 2130 pF) and fast turn-off (t_D(OFF) = 22.1 ns), supporting high-frequency operation up to 1 MHz in buck and synchronous boost topologies.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	60 V - supports 48 V input rail systems with 20 % margin
R_DS(ON) @ 10 V_GS	6.6 mΩ max - limits conduction loss to ≤1.0 W at 12 A in 12 V output rails
R_DS(ON) @ 4.5 V_GS	8.4 mΩ max - ensures full enhancement with standard 5 V PWM controllers
I_D (continuous, T_A = +25°C)	14.8 A - rated for 12 A steady-state operation with 20 % derating
Q_g @ 10 V_GS	37.5 nC - determines gate drive power requirement in 500 kHz switching
t_RR	26.9 ns - minimizes reverse recovery loss during hard-switched synchronous rectification
R_θJA (1″ Cu)	58 °C/W - enables 2.2 W dissipation at ≤85°C ambient without heatsink

Pinout & Package

Package: SO-8 surface-mount, lead-free matte tin finish, JEDEC-standard outline with 1.27 mm pitch, moisture sensitivity level 3.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 3, 4	Drain (D)	Four parallel internal drain connections - reduces package inductance and improves current sharing in high-di/dt applications
5, 6, 7	Source (S)	Three-source terminal layout - lowers source inductance to improve gate control stability during switching
8	Gate (G)	Single gate input - designed for direct connection to gate drivers with ≤0.6 Ω gate resistance

Key Features

Feature	Design Value
100% UIS tested	Guarantees ruggedness against inductive load transients without external snubbers in DC-DC output stages
Low Q_gd/Q_gs ratio	9.5 nC / 5.4 nC = 1.76 - suppresses Miller-induced shoot-through in half-bridge configurations
Body diode Q_RR	56.8 nC - reduces energy loss and voltage overshoot during freewheeling in synchronous rectifiers
ESD-protected gate	HBM rating ≥2 kV - eliminates need for external gate protection in automated assembly environments
Green compound (94V-0)	Halogen- and antimony-free molding - meets IPC-1752A reporting requirements for automotive Tier 1 BOMs

Applications

Server VRM Synchronous Rectifier

Telecom DC-DC Converter

Use Scenario: High-current 12 V → 1.2 V point-of-load conversion in dual-processor servers.

IC Role / Device Role / Timing Role: Low-side synchronous rectifier replacing Schottky diode in multiphase buck converter.

Use Value: Reduces conduction loss by 42 % vs. 15 mΩ alternative, enabling 95.2 % peak efficiency at 100 A per phase.

Use Scenario: 48 V intermediate bus to 5 V/3.3 V distribution in 5G base station power modules.

IC Role / Device Role / Timing Role: Primary-side switch in active clamp forward topology operating at 300 kHz.

Use Value: Enables <1.5 μs dead-time control due to fast t_F (10.8 ns), minimizing cross-conduction loss.

Industrial Motor Drive Inverter

Automotive ADAS Power Supply

Use Scenario: 24 V battery-fed H-bridge driving 100 W BLDC fan in PLC cabinet cooling system.

IC Role / Device Role / Timing Role: High-side and low-side switch in half-bridge leg with bootstrap gate drive.

Use Value: Supports 100 % duty cycle operation via low V_GS(TH) (1.3 V min) and stable R_DS(ON) over –40 to +125 °C.

Use Scenario: Power conditioning for radar sensor module requiring AEC-Q101-compliant components.

IC Role / Device Role / Timing Role: Secondary-side synchronous rectifier in isolated flyback supplying 3.3 V to FPGA core.

Use Value: Meets automotive transient immunity (ISO 7637-2 Pulse 5a) due to 23.7 A I_AS and 84.5 mJ E_AS.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRF7470PBF	R_DS(ON) = 7.5 mΩ @ 10 V_GS; C_iss = 2350 pF; SO-8 package	Higher gate charge (Q_g = 42 nC) increases driver loss at >300 kHz	Prefer for cost-sensitive 100 kHz industrial SMPS where efficiency >94 % not required
DMN67D8LW-7	R_DS(ON) = 6.2 mΩ @ 10 V_GS; Q_g = 32 nC; same SO-8 footprint but different pinout (G-S-D-S-D-D-D-D)	Non-identical pinout requires PCB redesign; lower R_DS(ON) only realized with 10 V gate drive	Select only when board revision allows pinout change and gate drive supports 10 V

Compared with IRF7470PBF and DMN67D8LW-7, DMT67M8LSS-13 delivers optimal balance of low R_DS(ON) at 4.5 V_GS, moderate Q_g, and production-tested UIS-making it preferred for high-density, high-frequency synchronous rectification where gate drive voltage headroom is limited.

Availability

DMT67M8LSS-13 is available at Aetrix Electronics and suitable for server VRMs, telecom DC-DC converters, and industrial motor drives requiring stable component supply across multi-year production cycles.

Supply support for DMT67M8LSS-13 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design centers across Asia and manufacturing in Taiwan, China, and Malaysia.

This MOSFET belongs to Diodes' PowerMOS™ portfolio, engineered specifically for high-efficiency power conversion in computing, communications, and industrial equipment where low R_DS(ON) and fast switching are critical.

FAQ

What is the maximum safe operating junction temperature for DMT67M8LSS-13?

The absolute maximum junction temperature is +150°C, and the device is characterized for continuous operation up to this limit. Thermal design must ensure that under worst-case ambient and power dissipation conditions, T_J does not exceed 150°C-verified using R_θJA = 58 °C/W (1-inch copper) and measured power loss from R_DS(ON) and switching losses.

Can DMT67M8LSS-13 be used in linear mode (as a pass transistor)?

No-it is not characterized or guaranteed for linear (ohmic) operation. The Safe Operating Area (SOA) curve shows only single-pulse capability down to DC, with R_DS(ON)-limited region valid only for pulsed conditions. Linear use risks thermal runaway due to positive temperature coefficient of R_DS(ON) and insufficient SOA margin at low V_DS.

Does DMT67M8LSS-13 require a gate resistor for EMI suppression?

A gate resistor (typically 2–10 Ω) is recommended to dampen ringing caused by gate loop inductance and Crss feedback, especially in high-di/dt applications. The datasheet specifies R_G = 3 Ω for dynamic parameter test conditions, and layout-dependent parasitics may necessitate tuning between 3–5 Ω for optimal EMI vs. switching loss trade-off.

Is the body diode suitable for reverse polarity protection?

No-the intrinsic body diode conducts from source to drain (S→D), making it unsuitable for reverse polarity protection which requires anode-to-cathode blocking in the forward direction. For reverse polarity protection, an external P-channel MOSFET or dedicated protection IC is required; using this device's body diode would allow reverse current flow.

DMT67M8LSS-13 Specifications

Product attributes: Attribute value

Manufacturer:: Diodes Incorporated

Series:: -

Package/Case:: 8-SOIC (0.154", 3.90mm Width)

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 60 V

Current - Continuous Drain (Id) @ 25°C:: 12A (Ta)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 6.6mOhm @ 16.5A, 10V

Vgs(th) (Max) @ Id:: 3V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 37.5 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 2130 pF @ 30 V

FET Feature:: -

Power Dissipation (Max):: 1.4W (Ta)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: 8-SO

DMT67M8LSS-13 FAQ

1.How can I place an order for DMT67M8LSS-13 through Aetrix?

Please submit a Request for Quotation (RFQ) for DMT67M8LSS-13 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for DMT67M8LSS-13 reliable?

The price and inventory of DMT67M8LSS-13 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMT67M8LSS-13 is usually 5 days.

3.What payment methods are accepted for DMT67M8LSS-13?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMT67M8LSS-13 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for DMT67M8LSS-13?

DMT67M8LSS-13 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your DMT67M8LSS-13 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for DMT67M8LSS-13?

For technical support, including DMT67M8LSS-13 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMT67M8LSS-13 requirements.

6.How does Aetrix verify that DMT67M8LSS-13 is sourced from the original manufacturer or authorized distributors?

All DMT67M8LSS-13 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMT67M8LSS-13 meets industry standards.

7.What is the process for return or replacement of DMT67M8LSS-13?

All DMT67M8LSS-13 units undergo pre-shipment inspection (PSI). If there is an issue with DMT67M8LSS-13, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The DMT67M8LSS-13 part is unused and in its original packaging.

Return procedure for DMT67M8LSS-13:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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