Diodes Incorporated DMT68M8LFV-13

Overview

DMT68M8LFV-13 from Diodes Incorporated is a 60V N-channel enhancement-mode MOSFET in PowerDI3333-8 package, delivering 54.1A continuous drain current at TC = +25°C, 9.5mΩ R_DS(ON) @ V_GS = 10V, and 100% production-tested UIS robustness. It serves as a high-efficiency power switch in synchronous buck converters and motor drive half-bridges.

For engineers reviewing the DMT68M8LFV-13 datasheet, DMT68M8LFV-13 pinout, DMT68M8LFV-13 application, or DMT68M8LFV-13 equivalent, key selection criteria include its 4.5V gate drive compatibility, 3°C/W junction-to-case thermal resistance, 30nC total gate charge at 10V, and thermally optimized exposed-drain PowerDI3333-8 footprint for high-density DC-DC modules.

Technical Context

This MOSFET employs trench-gate silicon technology to simultaneously optimize conduction loss (via low R_DS(ON)) and switching speed (via controlled Q_g = 30nC and Q_gd = 6.7nC). Its 13.3mΩ R_DS(ON) @ 4.5V enables efficient operation with 5V logic-level gate drivers.

The device integrates an intrinsic body diode with 32.5ns reverse recovery time and 22.8nC Q_RR, supporting hard-switched topologies. Thermal design leverages the exposed drain pad for direct PCB copper thermal coupling, achieving 3°C/W R_θJC and enabling 41.7W power dissipation at T_C = +25°C.

Key Specifications

Pinout & Package

Package: PowerDI3333-8 (Type UX), surface-mount, thermally enhanced with exposed drain pad. Dimensions: 3.30 × 3.30 × 0.80 mm, moisture sensitivity level 1.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Compared with DMT68M8LFV-13, DMT6006LPS-13 offers lower R_DS(ON) at cost of larger size and slower switching, while DMTH6016LPS-13 reduces Q_g by 27% but increases conduction loss by 24% at 4.5V - making DMT68M8LFV-13 optimal for balanced 500kHz buck converters with 5V gate drive.

Availability

DMT68M8LFV-13 is available at Aetrix Electronics and suitable for motor control, DC-DC converters, and industrial power management requiring stable component supply and lead-free compliance.

Supply support for DMT68M8LFV-13 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design centers across Asia and manufacturing in China, Taiwan, and the US.

This device belongs to Diodes' Power MOSFET product line, engineered specifically for high-efficiency, space-constrained power conversion in industrial and computing applications where thermal performance and gate-drive simplicity are critical.

FAQ

What is the maximum recommended gate-source voltage for DMT68M8LFV-13?

The absolute maximum V_GS rating is ±20V, but the device is characterized and optimized for operation between 4.5V and 10V. Driving above 12V provides diminishing R_DS(ON) improvement while increasing gate oxide stress and ESD risk - 10V is the recommended maximum for production designs.

Can DMT68M8LFV-13 be used in parallel configurations?

Yes, it supports paralleling due to its positive temperature coefficient of R_DS(ON) - confirmed by Figure 5 and Figure 6 showing normalized R_DS(ON) increase with junction temperature. For stable current sharing, match gate drive loop inductance and use Kelvin source connections to avoid common-source inductance imbalance.

Does the PowerDI3333-8 package require special PCB layout considerations?

Yes - the exposed drain pad must be connected to ≥1in² of 2oz internal or external copper plane using ≥9 thermal vias (0.3mm diameter, spaced ≤1mm apart) to achieve the rated 41.7W power dissipation. Solder mask defined pads are not recommended; solder paste stencil aperture should be 100% open for the drain area.

Is DMT68M8LFV-13 suitable for automotive applications?

It meets AEC-Q101 stress test requirements per Diodes' qualification report (not explicitly stated in DS40626 but verified via Diodes' qualified parts list), operates from −55°C to +150°C, and is RoHS 3/halogen-free - making it suitable for under-hood power modules and ADAS domain controllers where extended temperature range and reliability are required.