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Diodes Incorporated DMT68M8LFV-7
- Part No.:
- DMT68M8LFV-7
- Manufacturer:
- Diodes Incorporated
- Category:
- FETs, MOSFETs
- Package:
- 8-PowerVDFN
- Datasheet:
-
DMT68M8LFV-7.pdf
- Description:
- MOSFET N-CH 60V 54.1A PWRDI3333
- Quantity:
- Payment:
- Shipping:
Inventory:288
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Product details
Overview
DMT68M8LFV-7 from Diodes Incorporated is a 60V N-channel enhancement-mode MOSFET in PowerDI3333-8 package, rated for 54.1A continuous drain current at TC = +25°C, with RDS(ON) of 9.5mΩ @ VGS = 10V and 13.3mΩ @ VGS = 4.5V. It delivers high-efficiency power switching in motor control, DC-DC converters, and power management systems where thermal density and board space are constrained.
For engineers reviewing the DMT68M8LFV-7 datasheet, DMT68M8LFV-7 pinout, DMT68M8LFV-7 application, or DMT68M8LFV-7 equivalent, key selection criteria include its 60V VDSS rating, low RDS(ON) at 4.5V gate drive, 100% production-tested UIS robustness, thermally efficient PowerDI3333-8 footprint, and ESD-protected gate-critical for reliable operation in industrial and automotive power stages.
Technical Context
This MOSFET employs trench-gate silicon technology optimized for simultaneous low conduction loss and fast switching. Its 3.0°C/W RθJC enables direct thermal coupling to PCB copper pads, supporting high-current operation without external heatsinks in compact layouts.
The device features a fully characterized body diode with tRR = 32.5ns and QRR = 22.8nC, enabling synchronous rectification and hard-switched flyback or buck-boost topologies. Gate charge parameters (Qg = 30nC @ 10V, Qgd = 6.7nC) support efficient gate driver sizing for <20ns turn-off delay in high-frequency (>500kHz) power supplies.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 60V - Supports 48V nominal bus systems with 25% margin against transients |
| RDS(ON) @ 10V | 9.5mΩ - Enables ≤0.5W conduction loss at 23A, reducing thermal load in 50W+ converters |
| RDS(ON) @ 4.5V | 13.3mΩ - Ensures usable on-resistance with 3.3V/5V logic-level gate drivers |
| ID (TC=25°C) | 54.1A - Sustains peak load currents in motor H-bridge half-bridges and high-current POLs |
| UIS Rating | 28A/39mJ - Guarantees ruggedness under inductive switching stress without snubbers |
| Qg / Qgd | 30nC / 6.7nC - Low gate-drain charge ratio improves Miller immunity and dV/dt tolerance |
| RθJC | 3.0°C/W - Allows >35W power dissipation with minimal junction-to-pad temperature rise |
Pinout & Package
Package: PowerDI3333-8 (Type UX), surface-mount, thermally enhanced with exposed drain pad. Dimensions: 3.30 × 3.30 × 0.80 mm (L × W × H), 8-terminal configuration with 3 parallel source pins and 4 parallel drain pins for current sharing and thermal spreading.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 3 (S) | Source | Three dedicated source terminals reduce source inductance and improve current sharing in high-di/dt switching |
| 4 (G) | Gate | Single gate input with ESD protection; requires <1.71Ω gate resistance for optimal switching speed vs. ringing trade-off |
| 5–8 (D) | Drain | Four parallel drain terminals connect directly to exposed thermal pad; enable low-inductance, high-current path to PCB ground plane |
Key Features
| Feature | Design Value |
|---|---|
| 100% UIS tested | Ensures every unit withstands unclamped inductive energy up to 39mJ-eliminates field failure risk in motor drive freewheeling |
| PowerDI3333-8 footprint | Occupies only 33% board area of SO-8, enabling higher power density in space-constrained DC-DC modules |
| ESD-protected gate | HBM rating ≥2kV-reduces handling sensitivity and eliminates need for external gate protection in assembly |
| Lead-free & Green | Halogen- and antimony-free (<900ppm Br/Cl, <1000ppm Sb); compliant with RoHS 3 and JEDEC MSL Level 1 |
| Low RDS(ON) @ 4.5V | 13.3mΩ enables use with standard 5V microcontroller GPIOs-no level-shifting required in low-voltage control stages |
Applications
| Motor Control | DC-DC Converters |
|---|---|
|
Use Scenario: Brushed DC motor H-bridge half-bridge leg in battery-powered tools operating from 24–48V nominal supply. IC Role / Device Role / Timing Role: High-side or low-side power switch controlling motor direction and PWM speed regulation. Use Value: 13.3mΩ RDS(ON) @ 4.5V allows direct drive from MCU GPIO; 28A UIS rating absorbs back-EMF spikes during abrupt stop/brake events. |
Use Scenario: Primary-side synchronous rectifier in 60W isolated flyback converter for industrial IoT gateway power supply. IC Role / Device Role / Timing Role: Secondary-side power switch replacing Schottky diode to improve efficiency above 85% at full load. Use Value: 32.5ns tRR and 22.8nC QRR minimize reverse recovery loss; low Qgd reduces cross-conduction risk during gate transitions. |
| Power Management | Load Switching |
|
Use Scenario: High-current OR-ing FET in redundant 48V telecom power distribution unit with hot-swap capability. IC Role / Device Role / Timing Role: Bidirectional current-handling switch ensuring seamless switchover between primary and backup supplies. Use Value: 50A IS rating supports continuous forward conduction; 3.0°C/W RθJC maintains safe junction temperature under sustained 40A load. |
Use Scenario: Inrush-limited 12V system rail switch for FPGA-based edge AI module requiring controlled power-up sequencing. IC Role / Device Role / Timing Role: Low-loss, logic-level-controlled load switch with integrated gate driver interface. Use Value: 1.0–3.0V VGS(TH) range ensures clean turn-on with 3.3V control signals; 9.5mΩ RDS(ON) limits voltage drop to <500mV at 50A. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| DMT69M8LFB-7 | Same PowerDI3333-8 package but 69V VDSS and 10.5mΩ RDS(ON) @ 10V; higher avalanche rating (EAS = 45mJ) | Better suited for 54V nominal systems or designs requiring higher transient margin | Select when VDSS derating >15% is required beyond 48V bus; same layout and thermal design apply |
| SiR626DP-T1-GE3 | 60V TrenchFET® in PowerPAK® 1212-8; 7.0mΩ @ 10V but larger footprint (3.2×3.2mm vs. 3.3×3.3mm) and no 4.5V RDS(ON) spec | Higher efficiency at 10V drive, but incompatible with 4.5V-only controllers and less space-efficient | Choose only if gate drive is fixed at ≥10V and board area is not constrained; requires new PCB layout |
Compared with DMT68M8LFV-7, DMT69M8LFB-7 offers higher voltage headroom with identical form factor, while SiR626DP-T1-GE3 trades board space for lower RDS(ON) but lacks logic-level compatibility-making DMT68M8LFV-7 optimal for 48V systems needing 4.5V drive and minimal footprint.
Availability
DMT68M8LFV-7 is available at Aetrix Electronics and suitable for motor control, DC-DC converters, and power management applications requiring stable component supply, consistent thermal performance, and RoHS-compliant manufacturing.
Supply support for DMT68M8LFV-7 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, specializing in high-reliability power management, signal integrity, and protection solutions for industrial, computing, and consumer markets.
DMT68M8LFV-7 belongs to Diodes' Power MOSFET product line, engineered specifically for high-current, high-density power conversion where thermal efficiency, logic-level drive, and production-tested ruggedness are critical.
FAQ
What is the maximum continuous drain current at TC = +70°C?
The DMT68M8LFV-7 supports 43.3A continuous drain current at case temperature +70°C, per the Absolute Maximum Ratings table. This derating reflects thermal limitations of the PowerDI3333-8 package under real-world PCB thermal conditions-not ambient temperature alone-and assumes proper copper pour and via thermal relief design.
Does this MOSFET require a gate resistor for stability?
Yes-a gate resistor of 1.5–3.3Ω is recommended to dampen ringing caused by gate loop inductance and device capacitance. The datasheet specifies Rg = 3.3Ω for timing measurements (e.g., tD(OFF) = 20.5ns), and omitting it risks shoot-through or oscillation in high-speed switching applications.
Is the PowerDI3333-8 package compatible with standard reflow profiles?
Yes-the PowerDI3333-8 is qualified for lead-free reflow per J-STD-020, with Moisture Sensitivity Level 1. Peak temperature must not exceed 260°C, and the device supports standard Pb-free soldering profiles including ramp-to-spike and soak profiles without delamination or voiding when using recommended pad layout dimensions.
Can DMT68M8LFV-7 be used in synchronous rectification for 12V output rails?
Yes-it is suitable for synchronous rectification in 12V-output isolated converters. With VGS = 10V, its 9.5mΩ RDS(ON) yields <120mW conduction loss at 35A, and its 32.5ns tRR prevents significant reverse recovery loss. However, gate drive must be precisely timed to avoid cross-conduction with the primary-side switch.
DMT68M8LFV-7 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Diodes Incorporated
- Series:
- -
- Package/Case:
- 8-PowerVDFN
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 60 V
- Current - Continuous Drain (Id) @ 25°C:
- 54.1A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 9.5mOhm @ 13.5A, 10V
- Vgs(th) (Max) @ Id:
- 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 30 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 2078 pF @ 30 V
- FET Feature:
- -
- Power Dissipation (Max):
- 2.7W (Ta), 41.7W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- PowerDI3333-8 (Type UX)
DMT68M8LFV-7 FAQ
1.How can I place an order for DMT68M8LFV-7 through Aetrix?
Please submit a Request for Quotation (RFQ) for DMT68M8LFV-7 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for DMT68M8LFV-7 reliable?
The price and inventory of DMT68M8LFV-7 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMT68M8LFV-7 is usually 5 days.
3.What payment methods are accepted for DMT68M8LFV-7?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMT68M8LFV-7 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for DMT68M8LFV-7?
DMT68M8LFV-7 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your DMT68M8LFV-7 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for DMT68M8LFV-7?
For technical support, including DMT68M8LFV-7 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMT68M8LFV-7 requirements.
6.How does Aetrix verify that DMT68M8LFV-7 is sourced from the original manufacturer or authorized distributors?
All DMT68M8LFV-7 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMT68M8LFV-7 meets industry standards.
7.What is the process for return or replacement of DMT68M8LFV-7?
All DMT68M8LFV-7 units undergo pre-shipment inspection (PSI). If there is an issue with DMT68M8LFV-7, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The DMT68M8LFV-7 part is unused and in its original packaging.
Return procedure for DMT68M8LFV-7:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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