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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Diodes Incorporated DMT68M8LPS-13

Name: DMT68M8LPS-13
Brand: Diodes Incorporated
SKU: DMT68M8LPS-13
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: DMT68M8LPS-13

Manufacturer:: Diodes Incorporated

Category:: FETs, MOSFETs

Package:: 8-PowerTDFN

Datasheet:: DMT68M8LPS-13.pdf

Description:: MOSFET N-CH 60V PWRDI5060

Quantity:: RFQ Add To RFQ list

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Product details

Overview

DMT68M8LPS-13 from Diodes Incorporated is a 60V N-channel enhancement-mode MOSFET in PowerDI5060-8 package, optimized for high-efficiency power conversion with 7.9mΩ R_DS(ON) @ V_GS = 10V, 69.2A continuous drain current at T_C = +25°C, and integrated ESD-protected gate. It serves as a primary switching element in synchronous rectification stages of DC-DC converters.

For engineers reviewing the DMT68M8LPS-13 datasheet, DMT68M8LPS-13 pinout, DMT68M8LPS-13 application, or DMT68M8LPS-13 equivalent, key selection criteria include its low R_DS(ON) at 4.5V drive (10.8mΩ), fast switching times (t_R = 9.6ns, t_F = 8.9ns), robust UIS rating (28.1A avalanche current), and thermal resistance R_θJC = 2.2°C/W for high-power density board layouts.

Technical Context

This MOSFET employs a trench-gate silicon process to achieve low on-resistance while maintaining controlled gate charge (Q_g = 30nC @ 10V) and minimized output capacitance (C_oss = 605pF). Its internal body diode exhibits low forward voltage (V_SD = 0.7V typ @ I_S = 1A) and fast reverse-recovery (t_RR = 32.5ns).

The device is characterized for operation across –55°C to +150°C junction temperature, with gate threshold voltage V_GS(TH) tightly specified at 1–3V and stable over temperature. Its PowerDI5060-8 package features an exposed drain pad for direct thermal coupling to PCB copper, enabling high-current conduction with low thermal impedance.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	60V - Maximum blocking voltage before avalanche onset; supports 48V bus systems with margin.
R_DS(ON)	7.9mΩ @ V_GS = 10V - Enables <1.5W conduction loss at 60A, critical for high-current synchronous rectifiers.
I_D (continuous)	69.2A @ T_C = +25°C - Validated current capability when mounted on thermally enhanced PCB with exposed drain pad.
Q_g	30nC @ V_GS = 10V - Determines gate driver power requirement and switching transition time in hard-switched topologies.
t_R/t_F	9.6ns / 8.9ns - Fast edge rates reduce switching losses in high-frequency DC-DC converters (>500kHz).
E_AS	39.5mJ - Confirmed single-pulse avalanche energy rating ensures reliability under inductive load transients.
R_θJC	2.2°C/W - Junction-to-case thermal resistance enables efficient heat transfer to heatsink or copper plane.

Pinout & Package

Package: PowerDI5060-8 - surface-mount, 8-terminal leadless package with exposed drain pad for thermal and electrical connection. Molded green compound, UL 94V-0 rated, RoHS and halogen-free compliant.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 3, 5, 6, 7	Drain (D)	Electrically tied to exposed metal pad; primary current path and thermal conduction path to PCB.
4	Gate (G)	Control terminal; ESD-protected input requiring ≤±20V drive; low R_g = 1.71Ω aids fast turn-on/turn-off.
8	Source (S)	Reference node for gate drive; connects to power ground or low-side return path in half-bridge configurations.

Key Features

Feature	Design Value
100% UIS tested	Guarantees minimum 28.1A/39.5mJ avalanche capability per unit-no screening waivers or statistical sampling.
Low Q_gd/Q_gs ratio	Q_gd = 6.7nC, Q_gs = 4.1nC → 1.63 ratio improves Miller immunity and reduces risk of spurious turn-on in high-dV/dt environments.
Thermally enhanced package	Exposed drain pad delivers R_θJC = 2.2°C/W-enables >50W dissipation with minimal external heatsinking.
Low C_iss/C_oss ratio	C_iss = 2078pF, C_oss = 605pF → 3.43 ratio supports ZVS operation and reduces capacitive switching loss.
Body diode t_RR	32.5ns reverse recovery time - minimizes commutation loss and ringing in synchronous buck and LLC resonant converters.

Applications

Server VRMs

Industrial DC-DC Modules

Use Scenario: High-current, multiphase buck converters supplying CPU/GPU core voltage (0.8–1.2V @ up to 200A).

IC Role / Device Role / Timing Role: Low-side synchronous rectifier switch operating at 500kHz–1MHz with 4.5V gate drive from controller IC.

Use Value: 10.8mΩ R_DS(ON) @ 4.5V enables >95% efficiency at full load without gate boosting circuitry.

Use Scenario: Isolated 48V-to-12V intermediate bus converter in programmable logic controllers and motor drives.

IC Role / Device Role / Timing Role: Secondary-side synchronous rectifier in forward or active-clamp flyback topology.

Use Value: 39.5mJ E_AS withstands transformer leakage inductance spikes during no-load transient events.

Telecom Rectifier Units

Automotive ADAS Power Supplies

Use Scenario: 54V input telecom rectifier delivering 12V/30A to base station subsystems.

IC Role / Device Role / Timing Role: Primary-side high-side switch in two-switch forward configuration with 10V gate drive.

Use Value: 7.9mΩ R_DS(ON) limits conduction loss to <1.1W at 30A, reducing thermal stress in confined chassis space.

Use Scenario: 12V-to-5V/3.3V power supply for radar ECU and camera modules in AEC-Q100-compliant designs.

IC Role / Device Role / Timing Role: Input protection and load switch controlling power to safety-critical imaging sensors.

Use Value: –55°C to +150°C operating range and 100% UIS testing support automotive thermal cycling and fault tolerance requirements.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
DMT68M8LPSW-13	Same die, PowerDI5060-8/SWP (Type UX) variant with modified leadframe geometry and tighter D2/D2a dimensions.	Optimized for automated optical inspection (AOI) and improved solder joint reliability on fine-pitch PCBs.	Select when using AOI-based assembly lines or requiring higher first-pass yield on dense layouts.
DMN68M8LPS-13	Identical R_DS(ON), V_DSS, and Q_g, but packaged in PowerDI3333 (smaller footprint, lower current rating: 42A).	Targeted at space-constrained consumer power supplies where thermal budget allows lower I_D.	Choose only if board area is critical and peak current remains ≤40A; not suitable for server VRM loads.

Compared with DMT68M8LPSW-13, the -13 variant offers identical electrical performance with legacy footprint compatibility; versus DMN68M8LPS-13, it delivers +65% continuous current capacity and 30% lower R_θJC, making it the sole choice for industrial and telecom thermal-limited designs.

Availability

DMT68M8LPS-13 is available at Aetrix Electronics and suitable for server VRMs, industrial DC-DC modules, and telecom rectifier units requiring stable component supply, long-term lifecycle assurance, and traceable green-material compliance.

Supply support for DMT68M8LPS-13 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design, manufacturing, and sales operations across Asia, Europe, and the Americas.

This MOSFET belongs to Diodes' PowerDI® high-current logic-level portfolio, engineered specifically for high-efficiency, high-density power conversion in datacenter, industrial, and telecom infrastructure.

FAQ

What is the maximum safe operating temperature for DMT68M8LPS-13?

The device is rated for junction temperatures from –55°C to +150°C. Sustained operation above +150°C risks permanent parametric shift and bond-wire failure. Thermal design must ensure T_J ≤ 150°C under worst-case ambient and power dissipation, using R_θJC = 2.2°C/W and measured case temperature.

Does DMT68M8LPS-13 require a gate resistor for stability?

A gate resistor (typically 3.3Ω–10Ω) is recommended to dampen parasitic oscillation caused by PCB trace inductance interacting with C_iss and gate driver output impedance. The datasheet's switching time test condition (R_G = 3.3Ω) confirms this value provides optimal trade-off between speed and ringing suppression.

Can DMT68M8LPS-13 be used in avalanche mode intentionally?

No. While 100% UIS tested to 39.5mJ, the device is not characterized or warranted for repetitive avalanche operation. Intentional use in avalanche requires derating, additional thermal margin, and validation against system-level stress conditions beyond datasheet limits.

Is the PowerDI5060-8 package compatible with standard reflow profiles?

Yes. The package meets J-STD-020 moisture sensitivity level 1 and is qualified for standard Pb-free reflow profiles (peak ≤260°C, 60s max above 217°C). The matte tin finish ensures reliable solderability per MIL-STD-202, Method 208, with no pre-bake required for dry storage.

DMT68M8LPS-13 Specifications

Product attributes: Attribute value

Manufacturer:: Diodes Incorporated

Series:: -

Package/Case:: 8-PowerTDFN

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 60 V

Current - Continuous Drain (Id) @ 25°C:: 14.1A (Ta), 69.2A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 7.9mOhm @ 20A, 10V

Vgs(th) (Max) @ Id:: 3V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 30 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 2078 pF @ 30 V

FET Feature:: -

Power Dissipation (Max):: 2.4W (Ta), 56.8W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PowerDI5060-8

DMT68M8LPS-13 FAQ

1.How can I place an order for DMT68M8LPS-13 through Aetrix?

Please submit a Request for Quotation (RFQ) for DMT68M8LPS-13 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for DMT68M8LPS-13 reliable?

The price and inventory of DMT68M8LPS-13 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMT68M8LPS-13 is usually 5 days.

3.What payment methods are accepted for DMT68M8LPS-13?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMT68M8LPS-13 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for DMT68M8LPS-13?

DMT68M8LPS-13 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your DMT68M8LPS-13 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for DMT68M8LPS-13?

For technical support, including DMT68M8LPS-13 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMT68M8LPS-13 requirements.

6.How does Aetrix verify that DMT68M8LPS-13 is sourced from the original manufacturer or authorized distributors?

All DMT68M8LPS-13 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMT68M8LPS-13 meets industry standards.

7.What is the process for return or replacement of DMT68M8LPS-13?

All DMT68M8LPS-13 units undergo pre-shipment inspection (PSI). If there is an issue with DMT68M8LPS-13, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The DMT68M8LPS-13 part is unused and in its original packaging.

Return procedure for DMT68M8LPS-13:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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