Diodes Incorporated DMT69M5LCG-13

Overview

DMT69M5LCG-13 from Diodes Incorporated is a 60V N-channel enhancement-mode MOSFET in V-DFN3333-8 (Type B) package, rated for 52.1A continuous drain current at TC = +25°C with R_DS(ON) of 8.3mΩ @ V_GS = 10V and 12.5mΩ @ V_GS = 4.5V. It serves as a high-efficiency load switch and synchronous rectifier in notebook battery power management systems.

For engineers reviewing the DMT69M5LCG-13 datasheet, DMT69M5LCG-13 pinout, DMT69M5LCG-13 application, or DMT69M5LCG-13 equivalent, key selection criteria include low R_DS(ON) at 4.5V gate drive, 100% production-tested UIS robustness, thermal resistance of 3.7°C/W (junction-to-case), and compliance with AEC-Q101 for automotive-qualified variants.

Technical Context

This MOSFET employs a trench-gate silicon process optimized for low conduction loss while maintaining fast switching speed (t_D(ON) = 10.5ns, t_F = 79.5ns) and low gate charge (Q_g = 28.4nC @ 10V). Its V-DFN3333-8 package features an exposed drain pad for enhanced thermal dissipation.

The device supports operation across -55°C to +150°C junction temperature range, with gate threshold voltage V_GS(TH) tightly specified at 1.4–2.5V and body diode forward voltage V_SD = 0.7–1.2V at 1A. It delivers 37.5mJ avalanche energy (E_AS) under L = 0.1mH conditions.

Key Specifications

Pinout & Package

V-DFN3333-8 (Type B) is a 3.3mm × 3.3mm × 0.8mm leadless surface-mount package with an exposed drain pad on the bottom for thermal and electrical connection. The package uses NiPdAu-plated copper leadframe and meets UL 94V-0 flammability rating.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Compared with DMT6006LPS-13, DMT69M5LCG-13 offers superior board-area efficiency and lower gate drive demand, while DMTH6016LPS-13 provides identical form factor with automotive qualification-making it the preferred drop-in replacement where AEC-Q101 compliance is mandatory.

Availability

DMT69M5LCG-13 is available at Aetrix Electronics and suitable for notebook battery protection circuits, USB-C power delivery load switching, and industrial 24V rail isolation requiring stable component supply and consistent parametric performance across production lots.

Supply support for DMT69M5LCG-13 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design, manufacturing, and sales operations across Asia, Europe, and North America.

The DMTxM5L series targets high-efficiency, space-constrained power management applications, emphasizing low R_DS(ON) at logic-level gate drive, robust avalanche capability, and green packaging for portable and industrial end equipment.

FAQ

What is the maximum continuous drain current for DMT69M5LCG-13 at 70°C case temperature?

At TC = +70°C, the maximum continuous drain current is 41.7A with V_GS = 10V. This derating reflects thermal limitations of the V-DFN3333-8 package and must be validated against actual PCB copper area and airflow conditions per the datasheet's Figure 12 SOA chart.

Does DMT69M5LCG-13 have integrated ESD protection on the gate?

No. The device does not include on-chip gate ESD protection structures. External TVS diodes or RC snubbers are recommended for gate input protection in environments with >2kV HBM risk, especially when driven directly by long PCB traces or connectors.

Can DMT69M5LCG-13 be used in parallel configurations?

Yes, but with strict layout symmetry: matched gate trace lengths, Kelvin source connections, and shared thermal plane. The positive temperature coefficient of R_DS(ON) (Figure 6) supports current sharing, yet mismatched parasitics may cause imbalance above 30A total current without active current sensing.

Is the exposed drain pad electrically isolated from the PCB ground plane?

No. The exposed drain pad is electrically connected to all eight perimeter pins and must be soldered to a dedicated drain net - typically a high-current power plane. It must never be tied to system ground unless the drain node is grounded in the application topology.