Diodes Incorporated DMT69M5LCG-7

Overview

DMT69M5LCG-7 from Diodes Incorporated is a 60V N-channel enhancement-mode MOSFET in a V-DFN3333-8 (Type B) package, rated for 52.1A continuous drain current at TC = +25°C, with R_DS(ON) of 8.3mΩ @ V_GS = 10V and 12.5mΩ @ V_GS = 4.5V. It serves as a high-efficiency load switch and synchronous rectifier in notebook battery power management systems.

For engineers reviewing the DMT69M5LCG-7 datasheet, DMT69M5LCG-7 pinout, DMT69M5LCG-7 application, or DMT69M5LCG-7 equivalent, key selection criteria include its low R_DS(ON) at 4.5V gate drive, 100% production-tested UIS robustness, thermal resistance of 3.7°C/W (junction-to-case), and suitability for space-constrained DC-DC converter output stages.

Technical Context

This MOSFET employs a trench-gate silicon process optimized for simultaneous low conduction loss and fast switching. Its 3.7°C/W R_θJC enables direct thermal coupling to PCB copper, supporting high-current operation without external heatsinks in compact portable designs.

The device features a fully characterized body diode with t_RR = 26.7ns and Q_RR = 44.8nC under IF = 13.5A, di/dt = 300A/μs conditions - critical for synchronous rectification efficiency in buck converters operating above 300kHz.

Key Specifications

Pinout & Package

V-DFN3333-8 (Type B) is an 8-terminal, bottom-exposed-drain, lead-free surface-mount package measuring 3.3mm × 3.3mm × 0.8mm. The exposed drain pad occupies the center underside and must be soldered to a thermal pad for optimal heat transfer.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Compared with DMT6006LPS-7 and SI2306DS-T1-GE3, DMT69M5LCG-7 uniquely delivers 60V rating, 4.5V logic-level drive, and 3.3×3.3mm footprint in a single device - making it the only option among the three qualified for compact, high-current, mid-voltage load switching and synchronous rectification.

Availability

DMT69M5LCG-7 is available at Aetrix Electronics and suitable for notebook battery management, USB-C power delivery protection, and industrial DC-DC point-of-load regulation requiring stable component supply and long-term lifecycle assurance.

Supply support for DMT69M5LCG-7 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design, manufacturing, and distribution operations across Asia, Europe, and the Americas.

This device belongs to Diodes' PowerMOS™ portfolio, engineered specifically for high-efficiency, space-constrained power conversion and load control in portable computing and industrial power systems.

FAQ

What is the maximum allowable gate-source voltage for DMT69M5LCG-7?

The absolute maximum V_GS rating is ±20V per the datasheet. Operation beyond ±12V risks permanent gate oxide damage, while sustained bias above ±15V significantly accelerates time-dependent dielectric breakdown. Recommended gate drive remains within ±10V for reliability, especially in thermally demanding applications.

Does DMT69M5LCG-7 require a gate resistor for safe switching?

A gate resistor is recommended to dampen ringing and control dV/dt during switching. With R_g = 1.85Ω typical and Q_g = 28.4nC, a 5–10Ω series resistor limits peak gate current to <3A and extends turn-on time to ~30–60ns - balancing EMI reduction against conduction loss trade-offs in 300–500kHz applications.

Can DMT69M5LCG-7 be used in parallel configurations?

Yes - its positive temperature coefficient of R_DS(ON) (normalized to 1.2× at 125°C) enables inherent current sharing. Parallel use requires matched gate drive layout, identical trace lengths, and shared thermal pad connection. Derating total current by 15% is advised to account for parametric spread and thermal coupling effects.

Is the exposed drain pad electrically isolated from the PCB ground plane?

No - the exposed drain pad is the device's drain terminal and must be connected directly to the high-side power net (e.g., battery+ or converter output). It is not isolated; routing it to ground would cause immediate short-circuit failure. Thermal vias beneath the pad must connect only to internal power planes matching the drain potential.