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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Diodes Incorporated DMT69M5LFVW-13

Name: DMT69M5LFVW-13
Brand: Diodes Incorporated
SKU: DMT69M5LFVW-13
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: DMT69M5LFVW-13

Manufacturer:: Diodes Incorporated

Category:: FETs, MOSFETs

Package:: 8-PowerVDFN

Datasheet:: DMT69M5LFVW-13.pdf

Description:: MOSFET BVDSS: 41V~60V POWERDI333

Quantity:: RFQ Add To RFQ list

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Inventory:3,055

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Product details

Overview

DMT69M5LFVW-13 from Diodes Incorporated is a 60V N-channel enhancement-mode MOSFET in PowerDI3333-8 (SWP) package, delivering 8.3mΩ R_DS(ON) at V_GS = 10V and 40.6A continuous drain current at T_C = +25°C. It serves as a high-efficiency synchronous rectifier or power switch in DC-DC converters for LED backlighting and portable power management systems.

For engineers reviewing the DMT69M5LFVW-13 datasheet, DMT69M5LFVW-13 pinout, DMT69M5LFVW-13 application, or DMT69M5LFVW-13 equivalent, key selection criteria include its wettable flank terminals for automated optical inspection, 100% production-tested UIS robustness, and thermally efficient 6.1°C/W R_θJC for high-density PCB layouts.

Technical Context

This MOSFET employs a trench-gate silicon process optimized for low conduction loss while maintaining fast switching performance: t_D(ON) = 10.5ns and Q_g = 28.4nC at V_GS = 10V enable efficient operation in 300kHz–1MHz buck converters. Its body diode exhibits t_RR = 26.7ns and Q_RR = 44.8nC, supporting synchronous rectification with minimal reverse recovery loss.

The device operates across –55°C to +150°C junction temperature range and features ±20V gate-source voltage rating, enabling compatibility with standard 3.3V/5V/12V logic-level drive. Its PowerDI3333-8 package integrates an exposed drain pad for direct thermal coupling to PCB copper, achieving 20.5W power dissipation at T_C = +25°C.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	60V - supports input rails up to 48V nominal systems with margin for transients
R_DS(ON)	8.3mΩ @ V_GS = 10V - enables <1.1W conduction loss at 13.5A, critical for thermal budget in compact converters
I_D (continuous)	40.6A @ T_C = +25°C - allows high-current single-switch implementation without paralleling
Q_g	28.4nC @ V_GS = 10V - determines gate driver power requirement and switching loss trade-off
R_θJC	6.1°C/W - permits direct heatsinking via PCB copper, reducing need for external thermal solutions
t_RR	26.7ns - minimizes shoot-through risk and EMI during body diode commutation in synchronous topologies
UIS Rating	27.4A / 37.5mJ - validated unclamped inductive switching capability ensures reliability under load dump or inductor flyback stress

Pinout & Package

Package: PowerDI3333-8 (SWP), surface-mount, thermally enhanced with exposed drain pad and wettable flank terminals for solder joint inspection.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Top View)	Gate (G)	Control terminal; accepts 0–10V logic-level drive; requires <28.4nC charge for full turn-on
Pins 2–4 (Top View)	Source (S)	Power return path; electrically tied to PCB ground plane; forms low-inductance loop with gate driver
Pins 5–8 (Top View)	Drain (D)	Main power output node; connected to exposed copper pad on bottom for thermal conduction and current handling

Key Features

Feature	Design Value
100% production UIS testing	Guarantees avalanche ruggedness to 27.4A/37.5mJ without derating, eliminating field failure from inductive energy spikes
Wettable flank terminals	Enables AOI verification of solder fillet height on all four side terminals, improving manufacturing yield in high-volume SMT lines
Thermally efficient PowerDI3333-8	6.1°C/W R_θJC allows >20W power dissipation through PCB copper alone, reducing thermal interface material cost
Low R_DS(ON) at 4.5V drive	12.5mΩ @ V_GS = 4.5V supports direct interfacing with 3.3V microcontrollers or PWM controllers without level-shifting
Halogen- and antimony-free "Green" construction	<900ppm Br, <900ppm Cl, <1000ppm Sb meets automotive and industrial RoHS 3 and JIG-101 requirements

Applications

LED Backlighting

Point-of-Load DC-DC Converter

Use Scenario: Driving white LED strings in automotive instrument clusters and industrial HMI displays requiring dimming and overvoltage protection.

IC Role / Device Role: High-side synchronous rectifier in boost converter topology, switching at 500kHz with 100% duty cycle capability.

Use Value: 8.3mΩ R_DS(ON) reduces conduction loss by 35% vs. comparable 12mΩ MOSFETs, extending display runtime and lowering thermal stress on adjacent drivers.

Use Scenario: Secondary-side synchronous rectification in isolated 12V-to-3.3V/5V buck-derived converters for FPGA I/O banks and sensor interfaces.

IC Role / Device Role: Low-side power switch with integrated body diode used for active rectification and current sensing via R_DS(ON).

Use Value: 26.7ns body diode t_RR eliminates snubber circuits and reduces EMI filtering component count by 2–3 parts per channel.

USB-C Power Delivery

Industrial Motor Control

Use Scenario: Input protection and OR-ing switch in 20V/3A USB-C PD sink applications with hot-swap and reverse polarity tolerance.

IC Role / Device Role: N-channel high-side switch controlled by dedicated gate driver IC to manage inrush and fault isolation.

Use Value: ±20V V_GSS rating withstands 24V transient surges per USB-C spec, while 160A pulsed ID rating covers short-circuit events without latch-up.

Use Scenario: Half-bridge high-side switch in 24V BLDC motor gate driver modules for HVAC blowers and robotic actuators.

IC Role / Device Role: Power stage switch operating at 20kHz PWM with bootstrap gate drive; leverages low Q_gd/Q_gs ratio for clean edge control.

Use Value: 9.0nC Q_gd and 2.4nC Q_gs minimize Miller-induced shoot-through risk, enabling stable operation without complex dead-time tuning.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
DMT6006LPS-13	60V, 6.0mΩ @ 10V, but in larger PowerDI5060 package (R_θJC = 3.5°C/W); higher capacitance (C_iss = 1920pF)	Better thermal performance but requires more PCB area; less suitable for ultra-dense LED driver modules	Select when thermal headroom is constrained and board space permits larger footprint
DMTH6016LPS-13	60V, 16.5mΩ @ 4.5V, same PowerDI3333-8 package; lower Q_g (14.2nC) but higher R_DS(ON)	Optimized for 3.3V gate drive in battery-powered systems where switching loss dominates conduction loss	Select when driving from low-voltage MCUs and operating below 10A average current

Compared with DMT6006LPS-13, DMT69M5LFVW-13 trades 2.3mΩ higher R_DS(ON) for 40% smaller footprint and 25% lower C_iss, favoring density-constrained designs; versus DMTH6016LPS-13, it delivers 3.5× lower conduction loss at 12V gate drive, prioritizing efficiency in fixed-supply systems.

Availability

DMT69M5LFVW-13 is available at Aetrix Electronics and suitable for LED backlighting, point-of-load DC-DC conversion, and USB-C power delivery applications requiring stable component supply, consistent parametric performance, and long-term lifecycle support.

Supply support for DMT69M5LFVW-13 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design, manufacturing, and distribution operations across Asia, Europe, and the Americas.

This MOSFET belongs to Diodes' PowerDI® portfolio, engineered specifically for high-power-density, thermally constrained applications such as portable electronics, automotive lighting, and industrial power supplies where small-footprint thermal performance is critical.

FAQ

What is the maximum continuous drain current for DMT69M5LFVW-13 at 70°C case temperature?

The maximum continuous drain current is 32.5A at T_C = +70°C, as specified in the Absolute Maximum Ratings table. This value reflects thermal derating due to reduced heat transfer efficiency at elevated case temperatures and must be applied when ambient conditions or PCB layout limit thermal dissipation.

Does DMT69M5LFVW-13 support logic-level gate drive?

Yes - it delivers 12.5mΩ R_DS(ON) at V_GS = 4.5V and has a gate threshold voltage range of 1.4V to 2.5V, enabling reliable turn-on with standard 3.3V or 5V logic outputs without external level-shifting circuitry.

How does the wettable flank feature improve manufacturability?

The wettable flank design exposes vertical sidewalls on all four side terminals, allowing automated optical inspection (AOI) systems to verify solder fillet height and wetting quality - a critical capability for ensuring reliability in high-volume automotive and industrial assembly lines where X-ray inspection is cost-prohibitive.

Is DMT69M5LFVW-13 qualified for automotive applications?

While not pre-qualified to AEC-Q101, Diodes Incorporated offers automotive-grade variants of this device family (e.g., DMT69M5LFVWQ-13) with PPAP documentation, IATF 16949 manufacturing, and extended temperature screening; contact Diodes or Aetrix for qualification path support.

DMT69M5LFVW-13 Specifications

Product attributes: Attribute value

Manufacturer:: Diodes Incorporated

Series:: -

Package/Case:: 8-PowerVDFN

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 60 V

Current - Continuous Drain (Id) @ 25°C:: 14.8A (Ta), 40.6A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 8.3mOhm @ 13.5A, 10V

Vgs(th) (Max) @ Id:: 2.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 28.4 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 1406 pF @ 30 V

FET Feature:: -

Power Dissipation (Max):: 2.74W (Ta), 20.5W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount, Wettable Flank

Supplier Device Package:: PowerDI3333-8 (SWP) Type UX

DMT69M5LFVW-13 FAQ

1.How can I place an order for DMT69M5LFVW-13 through Aetrix?

Please submit a Request for Quotation (RFQ) for DMT69M5LFVW-13 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for DMT69M5LFVW-13 reliable?

The price and inventory of DMT69M5LFVW-13 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMT69M5LFVW-13 is usually 5 days.

3.What payment methods are accepted for DMT69M5LFVW-13?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMT69M5LFVW-13 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for DMT69M5LFVW-13?

DMT69M5LFVW-13 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your DMT69M5LFVW-13 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for DMT69M5LFVW-13?

For technical support, including DMT69M5LFVW-13 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMT69M5LFVW-13 requirements.

6.How does Aetrix verify that DMT69M5LFVW-13 is sourced from the original manufacturer or authorized distributors?

All DMT69M5LFVW-13 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMT69M5LFVW-13 meets industry standards.

7.What is the process for return or replacement of DMT69M5LFVW-13?

All DMT69M5LFVW-13 units undergo pre-shipment inspection (PSI). If there is an issue with DMT69M5LFVW-13, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The DMT69M5LFVW-13 part is unused and in its original packaging.

Return procedure for DMT69M5LFVW-13:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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