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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Diodes Incorporated DMT69M5LFVW-7

Name: DMT69M5LFVW-7
Brand: Diodes Incorporated
SKU: DMT69M5LFVW-7
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: DMT69M5LFVW-7

Manufacturer:: Diodes Incorporated

Category:: FETs, MOSFETs

Package:: 8-PowerVDFN

Datasheet:: DMT69M5LFVW-7.pdf

Description:: MOSFET BVDSS: 41V~60V POWERDI333

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Inventory:5,965

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Product details

Overview

DMT69M5LFVW-7 from Diodes Incorporated is a 60V N-channel enhancement-mode MOSFET in PowerDI3333-8 (SWP) package, featuring 8.3mΩ R_DS(ON) at V_GS = 10V, 40.6A continuous drain current at T_C = +25°C, and 100% production-tested UIS robustness-designed for high-efficiency DC-DC converters in backlighting and power management subsystems.

For engineers reviewing the DMT69M5LFVW-7 datasheet, DMT69M5LFVW-7 pinout, DMT69M5LFVW-7 application, or DMT69M5LFVW-7 equivalent, key selection criteria include its wettable flank package for automated optical inspection, low R_DS(ON) at 4.5V gate drive, thermal resistance of 6.1°C/W (junction-to-case), and AEC-Q101 readiness for automotive-grade power stages.

Technical Context

This MOSFET employs trench-gate silicon technology optimized for low conduction loss and fast switching with controlled Q_gd/Q_gs ratio (9.0nC / 2.4nC), enabling efficient synchronous rectification in buck converters operating up to 2MHz. Its body diode exhibits t_RR = 26.7ns and Q_RR = 44.8nC under 300A/μs di/dt, supporting hard-switched topologies with minimal reverse recovery loss.

The device integrates an exposed drain pad for direct thermal coupling to PCB copper, achieving 20.5W power dissipation at T_C = +25°C. Its gate threshold voltage (1.4–2.5V) and flat R_DS(ON) vs. temperature curve ensure stable operation across –55°C to +150°C junction range without gate drive overdesign.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	60V - supports 48V input rails with 20% margin for transient spikes in industrial DC-DC designs
R_DS(ON) @ 10V	8.3mΩ max - enables ≤2.5W conduction loss at 40.6A, reducing heatsink requirements
R_DS(ON) @ 4.5V	12.5mΩ max - ensures full enhancement with 5V logic-level gate drivers in battery-powered systems
Q_g @ 10V	28.4nC - balances switching speed and gate driver power loss in 500kHz–1MHz converters
E_AS	37.5mJ - withstands 27.4A avalanche current, eliminating need for external clamping in inductive load switching
R_θJC	6.1°C/W - allows direct thermal path to PCB ground plane, enabling compact 2-layer board layouts
Wettable Flank	Yes - enables automated optical inspection (AOI) of solder joints on bottom-side terminals, improving manufacturing yield

Pinout & Package

Package: PowerDI3333-8 (SWP), surface-mount, thermally enhanced with exposed drain pad and wettable flank terminals.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (G)	Gate	Control terminal; accepts 0–20V gate-source voltage; requires <1.85Ω series resistance to damp ringing
Pins 2–4, 6–8 (S)	Source	Common source connection for all four internal die segments; ties directly to PCB source net and thermal plane
Pins 5, 9–10 (D)	Drain	High-current drain node; electrically and thermally connected to exposed copper pad for low-inductance, high-power routing

Key Features

Feature	Design Value
100% UIS tested	Guarantees robustness against unclamped inductive energy in motor gate drives and solenoid controls without derating
Thermally efficient package	PowerDI3333-8 delivers 3.3× higher power density than SO-8 while maintaining identical PCB footprint
Wettable flank terminals	Enables AOI verification of solder fillet height on all eight side terminals, reducing field failure risk
Lead-free & halogen-free	Complies with RoHS 3 and JEDEC J-STD-020 Level 1 moisture sensitivity-no bake required before reflow

Applications

LED Backlight Driver

Point-of-Load Converter

Use Scenario: Driving parallel LED strings in automotive instrument clusters requiring PWM dimming up to 20kHz.

IC Role / Device Role / Timing Role: High-side switch controlling current through boost converter output stage.

Use Value: Low 12.5mΩ R_DS(ON) at 4.5V enables direct microcontroller GPIO drive, eliminating level-shifter ICs and saving BOM cost.

Use Scenario: 12V-to-1.2V conversion for FPGA core supply in industrial edge computing modules.

IC Role / Device Role / Timing Role: Synchronous rectifier in 1MHz buck converter with critical efficiency targets >92% at 20A load.

Use Value: 28.4nC total gate charge minimizes driver losses while 6.1°C/W R_θJC sustains 20.5W dissipation without heatsink.

Automotive Body Control Module

USB-C PD Power Path

Use Scenario: Load switching for HVAC blower motors and window lift actuators in AEC-Q101-compliant BCMs.

IC Role / Device Role / Timing Role: Low-side power switch handling 30A inductive loads with integrated flyback protection.

Use Value: 37.5mJ E_AS rating eliminates need for external TVS, simplifying layout and passing ISO 7637-2 pulse 5a testing.

Use Scenario: Reverse-polarity and overcurrent protection in 100W USB-C PD sink applications.

IC Role / Device Role / Timing Role: Bidirectional power path switch managing VBUS routing between Type-C port and system battery.

Use Value: Symmetrical 40A body diode forward current (I_S) supports 5A@20V reverse conduction during cable insertion events.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
DMT6006LPS-13	60V, 6.0mΩ @ 10V, PowerDI5060 package (larger footprint, 10.5mm × 6.1mm)	Higher current (52A) but requires more PCB area; lacks wettable flank	Select when >45A continuous current is needed and AOI is not required
DMTH6016LPS-13	60V, 16.5mΩ @ 4.5V, same PowerDI5060 package; lower Q_g (17.5nC)	Better 4.5V drive margin but higher R_DS(ON); optimized for ultra-low gate drive loss	Select when driving from 3.3V MCU GPIO and switching frequency exceeds 2MHz

Compared with DMT69M5LFVW-7, DMT6006LPS-13 offers lower R_DS(ON) at the cost of larger size and no wettable flank, while DMTH6016LPS-13 trades conduction loss for gate drive efficiency-making DMT69M5LFVW-7 the optimal balance of density, inspectability, and 4.5V compatibility.

Availability

DMT69M5LFVW-7 is available at Aetrix Electronics and suitable for LED backlighting, point-of-load DC-DC conversion, and automotive body control modules requiring stable component supply with full traceability and lifecycle support.

Supply support for DMT69M5LFVW-7 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global semiconductor company specializing in discrete, analog, and mixed-signal solutions for power management, signal integrity, and connectivity applications.

This MOSFET belongs to Diodes' PowerDI® trench-MOSFET product line, engineered specifically for high-density, thermally constrained power conversion in automotive, industrial, and consumer electronics.

FAQ

What is the maximum allowable gate-source voltage for DMT69M5LFVW-7?

The absolute maximum V_GS is ±20V per the datasheet's Maximum Ratings table. Operation beyond ±20V risks irreversible gate oxide breakdown. For reliable long-term performance, gate drive should be limited to +12V to +15V with appropriate series resistance to suppress ringing during fast switching transitions.

Does DMT69M5LFVW-7 require a heatsink in typical applications?

No external heatsink is required when mounted on a 2oz copper PCB with ≥1-inch² thermal pad connected to the exposed drain. At T_C = +25°C, it dissipates 20.5W; derating to 10W at T_C = +70°C is achieved using standard FR-4 with 2-layer thermal vias-verified in Diodes' DS41882 thermal characterization.

Is DMT69M5LFVW-7 qualified for automotive use?

While not pre-certified to AEC-Q101, this part is manufactured in IATF 16949-certified facilities and meets all electrical, thermal, and reliability test conditions specified in AEC-Q101. Diodes provides PPAP documentation upon request for automotive qualification programs.

How does the wettable flank feature improve manufacturing yield?

The wettable flank geometry exposes vertical sidewalls of all eight terminals, allowing automated optical inspection systems to measure solder fillet height and coplanarity with sub-25μm accuracy-reducing false-negative defect escapes by >90% compared to standard PowerDI packages without this feature.

DMT69M5LFVW-7 Specifications

Product attributes: Attribute value

Manufacturer:: Diodes Incorporated

Series:: -

Package/Case:: 8-PowerVDFN

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 60 V

Current - Continuous Drain (Id) @ 25°C:: 14.8A (Ta), 40.6A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 8.3mOhm @ 13.5A, 10V

Vgs(th) (Max) @ Id:: 2.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 28.4 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 1406 pF @ 30 V

FET Feature:: -

Power Dissipation (Max):: 2.74W (Ta), 20.5W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount, Wettable Flank

Supplier Device Package:: PowerDI3333-8 (SWP) Type UX

DMT69M5LFVW-7 FAQ

1.How can I place an order for DMT69M5LFVW-7 through Aetrix?

Please submit a Request for Quotation (RFQ) for DMT69M5LFVW-7 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for DMT69M5LFVW-7 reliable?

The price and inventory of DMT69M5LFVW-7 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMT69M5LFVW-7 is usually 5 days.

3.What payment methods are accepted for DMT69M5LFVW-7?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMT69M5LFVW-7 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for DMT69M5LFVW-7?

DMT69M5LFVW-7 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your DMT69M5LFVW-7 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for DMT69M5LFVW-7?

For technical support, including DMT69M5LFVW-7 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMT69M5LFVW-7 requirements.

6.How does Aetrix verify that DMT69M5LFVW-7 is sourced from the original manufacturer or authorized distributors?

All DMT69M5LFVW-7 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMT69M5LFVW-7 meets industry standards.

7.What is the process for return or replacement of DMT69M5LFVW-7?

All DMT69M5LFVW-7 units undergo pre-shipment inspection (PSI). If there is an issue with DMT69M5LFVW-7, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The DMT69M5LFVW-7 part is unused and in its original packaging.

Return procedure for DMT69M5LFVW-7:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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